CN203630190U - Test device of multiple-light-emitting unit semiconductor laser space threshold current - Google Patents
Test device of multiple-light-emitting unit semiconductor laser space threshold current Download PDFInfo
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- CN203630190U CN203630190U CN201320660823.8U CN201320660823U CN203630190U CN 203630190 U CN203630190 U CN 203630190U CN 201320660823 U CN201320660823 U CN 201320660823U CN 203630190 U CN203630190 U CN 203630190U
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- semiconductor laser
- aperture diaphragm
- unit semiconductor
- space threshold
- illuminating unit
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Abstract
The utility model provides a test device of a multiple-light-emitting unit semiconductor laser space threshold current. The device is characterized in that the device comprises a multiple-light-emitting unit semiconductor laser, a fast and slow axis collimating lens assembly, a microscopic objective possessing an amplification effect, an aperture diaphragm with an adjustable position and a optical power detector which are successively arranged. The device of the utility model can measure the space threshold current information of the multiple-light-emitting unit semiconductor laser and then can evaluate a stress generated through semiconductor laser packaging so as to guide and improve a packaging technology.
Description
Technical field
The utility model relates to a kind of device that encapsulates the stress producing in order to test multi-illuminating unit semiconductor laser.
Background technology
The stress that semiconductor laser encapsulation produces is seriously restricting Output optical power, mission life and the spectral characteristic of device, it is the principal element that causes high power semiconductor lasers poor reliability, the strain method that measuring semiconductor individual laser package produces is a lot, comprise by cathode-luminescence analytic approach (CL), micro-fluorescence spectrum analysing method (μ-PL), micro-Raman spectroscopy (μ-R), photocurrent spectra method (PC) etc., these methods need expensive testing equipment, process of the test complexity.
About the test of threshold current for semiconductor lasers, be mainly the threshold current of measuring semiconductor laser instrument entirety at present, this threshold current cannot characterize the stress distribution that semiconductor laser encapsulation produces.
Utility model content
The utility model provides method of testing and the device of a kind of multi-illuminating unit semiconductor laser space threshold current, can measure the space threshold value current information of multi-illuminating unit semiconductor laser, and then realize and evaluate semiconductor laser and encapsulate the stress being produced, thereby guidance and improve packaging technology.
The technical solution of the utility model is as follows:
A method of testing for multi-illuminating unit semiconductor laser space threshold current, comprises the following steps:
(1) light multi-illuminating unit semiconductor laser being sent carries out fast axis collimation and slow axis collimation;
(2) after fast and slow axis collimating mirror, place microcobjective, spatially amplify for the multiple luminescence units of semiconductor laser, luminescence unit after amplification by aperture diaphragm by each independently luminescence unit separate, the position of adjustment aperture diaphragm and clear aperature only allow the light of a luminescence unit to pass through;
(3) utilize photodetector to carry out power test to this luminescence unit, by changing the size of drive current, obtain the corresponding Output optical power of this luminescence unit;
(4) adopt fitting a straight line method to obtain the threshold current of this luminescence unit;
(5) keep multi-illuminating unit semiconductor laser position motionless, by mobile aperture diaphragm, obtain successively the threshold current of each luminescence unit according to step (3), (4);
(6) finally obtain the threshold current of all luminescence units, form space threshold value current information figure.
Based on the method for testing of above-mentioned multi-illuminating unit semiconductor laser space threshold current, because the threshold current of the stress distribution producing in encapsulation process and each luminescence unit is closely related, in the time that luminescence unit is subject to compressive stress, threshold current reduces, in the time that luminescence unit is subject to tension stress, threshold current increases; The method of the stress that the utility model measuring semiconductor individual laser package produces, is according to the space threshold value current information figure obtaining, and show that qualitatively semiconductor laser encapsulates the stress distribution situation producing.
The utility model also provides a kind of device of realizing above-mentioned multi-illuminating unit semiconductor laser space threshold value current test method, comprises the multi-illuminating unit semiconductor laser that sets gradually, fast and slow axis collimation lens assembly, the microcobjective with amplification, aperture diaphragm and optical power detector that position is adjustable.
Consider that aperture diaphragm easily deforms under the irradiation of light laser, cause the size of aperture diaphragm clear aperature to change, will affect different luminescence unit isolation, therefore aperture diaphragm is carried out to radiator structure design.Specifically can adopt following three kinds of modes to dispel the heat:
Aperture diaphragm adopts the metal material of high heat conductance to make, and applies light absorbent on the surface of aperture diaphragm, and described high thermal conductance heating rate metal material can be copper, gold, copper tungsten, copper diamond composite etc.
At aperture diaphragm place, fan being set carries out air-cooled.
Water route, microchannel is set on aperture diaphragm or dispel the heat in grand passage water route.
The utlity model has following advantage:
The utility model can be accurately, the threshold current information of the different luminescence units of measuring semiconductor laser instrument easily, forms multi-illuminating unit semiconductor laser space threshold value current information figure.The utility model, by the space threshold value current information figure obtaining, show that semiconductor laser encapsulates the stress distribution situation producing qualitatively.
Adopt the method for the test reflection stress distribution of space threshold current to have advantages of that method is simple, testing efficiency is high, can carry out stress analysis to the different capacity semiconductor laser of different duty, multi-illuminating unit.
This method can be used for instructing and improving the packaging technology of semiconductor laser, and for example in paster technique, weight, the pitch angle etc. of briquetting can give certain guidance and improvement by the utility model.
Accompanying drawing explanation
Fig. 1 is space of the present utility model threshold value current testing device schematic diagram.
Fig. 2 is the aperture diaphragm schematic diagram that adopts liquid cooling mode to dispel the heat.
Fig. 3 is 40W conduction cooling type semiconductor laser array space threshold value testing current result.
Fig. 4 is the stress distribution that the encapsulation of 40W conduction cooling type semiconductor laser array produces.
Drawing reference numeral explanation:
1-semiconductor laser; 2-fast axis collimation mirror; 3-slow axis collimating mirror; 4-microcobjective; 5 aperture diaphragms; 6-power meter; 7-water route; 8-water inlet; 9-water delivering orifice.
Embodiment
First the utility model provides the method for testing of a kind of multi-illuminating unit semiconductor laser space threshold current, comprises the following steps:
(1) in semiconductor laser exiting surface front, fast axis collimation mirror and slow axis collimating mirror are set, for compressing the fast axle angle of divergence and the slow axis angle of divergence of semiconductor laser, improve the accuracy of test;
(2) after fast and slow axis collimating mirror, place microcobjective, spatially amplify for the multiple luminescence units of semiconductor laser, luminescence unit after amplification is separated each independently luminescence unit by aperture diaphragm, utilizes photodetector to carry out power test to each independently luminescence unit;
(3) utilize photodetector to carry out power test to this luminescence unit, by changing the size of drive current, obtain the Output optical power of this luminescence unit correspondence under different driving electric current;
(4) adopt fitting a straight line method to obtain the threshold current of this luminescence unit;
(5) keep multi-illuminating unit semiconductor laser position motionless, by mobile aperture diaphragm, obtain successively the threshold current of each luminescence unit according to step (3), (4);
(6) finally obtain the threshold current of all luminescence units, form space threshold value current information figure.
As shown in Figure 1, space of the present utility model threshold value current testing device, comprises the multi-illuminating unit semiconductor laser that sets gradually, fast and slow axis collimation lens assembly, the microcobjective with amplification, aperture diaphragm and optical power detector that position is adjustable.
In the time that a certain luminescence unit sees through aperture diaphragm, aperture diaphragm easily deforms under the irradiation of other luminescence units, can consider following three kinds of radiating modes:
(1) adopt the metal material of high heat conductance to make aperture diaphragm, apply light absorbent on the surface of aperture diaphragm, avoid the films on cavity surfaces of semiconductor lasers that reflexes to of light laser to damage laser instrument.Described high thermal conductance heating rate metal material can be copper, gold, copper tungsten, copper diamond composite etc.Described light absorbent can be pitch-dark light-absorbing coating, phosphate light-absorbing coating, graphite composite material light-absorbing coating etc.
(2) adopt the method for wind cooling temperature lowering to dispel the heat to the surface of aperture diaphragm, at aperture diaphragm place, fan is set and carries out air-cooled.
(3) as Fig. 2, adopt the method for water-cooled cooling to dispel the heat to aperture diaphragm, water route, microchannel is set on aperture diaphragm or dispel the heat in grand passage water route.
Because the threshold current of the stress distribution producing in multi-illuminating unit semiconductor laser encapsulation process and each luminescence unit is closely related, in the time that luminescence unit is subject to compressive stress, threshold current reduces, and in the time that luminescence unit is subject to tension stress, threshold current increases; Therefore,, according to the space threshold value current information figure obtaining, can show qualitatively that semiconductor laser encapsulates the stress distribution situation producing.
Experimental verification:
40W conduction cooling type semiconductor laser array comprises 19 luminescence units, dutycycle 20%, and luminous zone width 100 μ m, the long 1.5mm in chamber, as shown in Figure 3, the stress distribution that encapsulation produces is through experiment measuring and calculating, as shown in Figure 4 for space threshold value testing current data.Can find out, be subject to the effect of tension stress for the larger luminescence unit of threshold current, for example the 2nd, 17,18 luminescence units, the luminescence unit that threshold current is less is subject to the effect of compressive stress, for example the 9th luminescence unit.
Claims (4)
1. a multi-illuminating unit semiconductor laser space threshold value current testing device, is characterized in that: comprise the multi-illuminating unit semiconductor laser that sets gradually, fast and slow axis collimation lens assembly, the microcobjective with amplification, aperture diaphragm and optical power detector that position is adjustable.
2. multi-illuminating unit semiconductor laser according to claim 1 space threshold value current testing device, is characterized in that: aperture diaphragm adopts the metal material of high heat conductance to make, and applies light absorbent on the surface of aperture diaphragm; Described high thermal conductance heating rate metal material is copper, gold, copper tungsten or copper diamond composite.
3. multi-illuminating unit semiconductor laser according to claim 1 space threshold value current testing device, is characterized in that: at aperture diaphragm place, fan is set and carries out air-cooled.
4. multi-illuminating unit semiconductor laser according to claim 1 space threshold value current testing device, is characterized in that: water route, microchannel is set on aperture diaphragm or dispel the heat in grand passage water route.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320660823.8U CN203630190U (en) | 2013-10-24 | 2013-10-24 | Test device of multiple-light-emitting unit semiconductor laser space threshold current |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320660823.8U CN203630190U (en) | 2013-10-24 | 2013-10-24 | Test device of multiple-light-emitting unit semiconductor laser space threshold current |
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| Publication Number | Publication Date |
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| CN203630190U true CN203630190U (en) | 2014-06-04 |
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| CN201320660823.8U Withdrawn - After Issue CN203630190U (en) | 2013-10-24 | 2013-10-24 | Test device of multiple-light-emitting unit semiconductor laser space threshold current |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103529274A (en) * | 2013-10-24 | 2014-01-22 | 西安炬光科技有限公司 | Testing method and device of spatial threshold current semiconductor laser with multiple light-emitting units |
| CN104236769A (en) * | 2014-10-14 | 2014-12-24 | 西安炬光科技有限公司 | Method and device for testing residual stress distribution of semiconductor laser chips |
-
2013
- 2013-10-24 CN CN201320660823.8U patent/CN203630190U/en not_active Withdrawn - After Issue
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103529274A (en) * | 2013-10-24 | 2014-01-22 | 西安炬光科技有限公司 | Testing method and device of spatial threshold current semiconductor laser with multiple light-emitting units |
| CN103529274B (en) * | 2013-10-24 | 2017-04-12 | 西安炬光科技股份有限公司 | Testing method and device of spatial threshold current semiconductor laser with multiple light-emitting units |
| CN104236769A (en) * | 2014-10-14 | 2014-12-24 | 西安炬光科技有限公司 | Method and device for testing residual stress distribution of semiconductor laser chips |
| CN104236769B (en) * | 2014-10-14 | 2017-04-12 | 西安炬光科技股份有限公司 | Method and device for testing residual stress distribution of semiconductor laser chips |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 710119 high tech Zone, Shaanxi, Xi'an new industrial park information Avenue, building 17, building three, floor 10 Patentee after: FOCUSLIGHT TECHNOLOGIES INC. Address before: 710119 high tech Zone, Shaanxi, Xi'an new industrial park information Avenue, building 17, building three, floor 10 Patentee before: Xi'an Focuslight Technology Co., Ltd. |
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| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20140604 Effective date of abandoning: 20170412 |