CN203573998U - 多晶硅刻蚀下料台 - Google Patents

多晶硅刻蚀下料台 Download PDF

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CN203573998U
CN203573998U CN201320586803.0U CN201320586803U CN203573998U CN 203573998 U CN203573998 U CN 203573998U CN 201320586803 U CN201320586803 U CN 201320586803U CN 203573998 U CN203573998 U CN 203573998U
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polysilicon
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discharging bench
solar energy
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刘海林
叶中伟
张伟伟
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Henan Linxin New Energy Technology Co ltd
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HENAN YIXINWEI NEW ENERGY TECHNOLOGY Co Ltd
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Abstract

本实用新型属于多晶硅太阳能板生产技术领域,具体的说是涉及一种多晶硅刻蚀下料台,其主要是为了提高多晶硅太阳能板的刻蚀工艺的生产效率,同时提高太阳能板的生产质量,提供了一种多晶硅刻蚀下料台,包括刻蚀机本体和格栅板,在刻蚀机本体的前端下部位置通过焊接固定有下料台,在下料台上放置有格栅板,在格栅板与下料台之间设置有缓冲件,缓冲件采用海绵,本实用新型简多方便,有效的提高了生产多晶硅太阳能板的刻蚀的生产效率,降低了多晶硅太阳能板的次品的概率,提高了企业效益。

Description

多晶硅刻蚀下料台
技术领域
本实用新型属于多晶硅太阳能板生产技术领域,具体的说是涉及一种多晶硅刻蚀下料台。
背景技术
现在在多晶硅太阳能板生产领域所使用的刻蚀机大多数没有下料台,由于刻蚀机的刻蚀工艺生产速度不高,工人大多数采用手工方式将刻蚀好的多晶硅太阳能板从刻蚀机上取下放进格栅板内,由于多晶硅太阳能板非常脆,这样的生产方式容易造成多晶硅太阳能板因放置用力过大而造成多晶硅太阳能板的损害,给企业带来不来不必要的损失。
发明内容
本实用新型的发明目的:
主要是为了提高多晶硅太阳能板的刻蚀工艺的生产效率,同时提高太阳能板的生产质量。
本实用新型的发明内容为:
提供了一种多晶硅刻蚀下料台,包括刻蚀机本体和格栅板,在刻蚀机本体的前端下部位置通过焊接固定有下料台,在下料台上放置有格栅板,在格栅板与下料台之间设置有缓冲件,所述的缓冲件采用海绵。
本实用新型的有益效果是:
有效的提高了生产多晶硅太阳能板的刻蚀的生产效率,降低了多晶硅太阳能板的次品的概率,提高了企业效益。
附图说明
图1为本实用新型的结构示意图。
图中,1为刻蚀机本体;2为多晶硅太阳能板;3为缓冲件;4为下料台;5为格栅板。
具体实施方式
以下结合附图对本实用新型的具体实施方式做出详细的说明。
如图1所示,提供了一种简多的多晶硅刻蚀下料台,包括刻蚀机本体1和格栅板5,在刻蚀机本体1的前端下部位置通过焊接固定有下料台4,在下料台4上放置有格栅板5,在格栅板5与下料台4之间设置有缓冲件3,为了节约生产提高生产质量,所述的缓冲件3采用海绵,在使用过程中,多晶硅太阳能板2在刻蚀机内刻蚀完毕后要从刻蚀机本体上拿下,现在增加了下料台后工人可以直接将多晶硅太阳能板放置到增加了缓冲件的下料台的格栅板内,在将格栅板拿走进行下一步的工艺,如此一来,极大的提高了多晶硅太阳能板的刻蚀工艺的生产效率,提高了产品的合格率。

Claims (2)

1.一种多晶硅刻蚀下料台,包括刻蚀机本体和格栅板,其特征是:在刻蚀机本体的前端下部位置通过焊接固定有下料台,在下料台上放置有格栅板,在格栅板与下料台之间设置有缓冲件。
2.根据权利要求1所述的多晶硅刻蚀下料台,其特征是:所述的缓冲件为海绵。
CN201320586803.0U 2013-09-23 2013-09-23 多晶硅刻蚀下料台 Expired - Fee Related CN203573998U (zh)

Priority Applications (1)

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CN201320586803.0U CN203573998U (zh) 2013-09-23 2013-09-23 多晶硅刻蚀下料台

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CN201320586803.0U CN203573998U (zh) 2013-09-23 2013-09-23 多晶硅刻蚀下料台

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CN203573998U true CN203573998U (zh) 2014-04-30

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Effective date of registration: 20180316

Address after: 451200 west of Jiao Wan Village, Kang Dian Town, Gongyi, Henan

Patentee after: HENAN LINXIN NEW ENERGY TECHNOLOGY CO.,LTD.

Address before: 451200 Zhengzhou City, Henan, Gongyi city Kang Dian Industrial Park

Patentee before: HENAN YIXINWEI NEW ENERGY TECHNOLOGY Co.,Ltd.

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20140430

Termination date: 20210923