CN203562418U - Temperature control cooling fin for MOS tube - Google Patents
Temperature control cooling fin for MOS tube Download PDFInfo
- Publication number
- CN203562418U CN203562418U CN201320634569.4U CN201320634569U CN203562418U CN 203562418 U CN203562418 U CN 203562418U CN 201320634569 U CN201320634569 U CN 201320634569U CN 203562418 U CN203562418 U CN 203562418U
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- cooling fin
- oxide
- temperature control
- metal
- semiconductor
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Abstract
The utility model relates to a temperature control cooling fin for an MOS tube. The temperature control cooling fin comprises a cooling fin body, a pipeline is arranged on the cooling fin body through imbibition technology, and phase-change material is filled in the pipeline. The temperature control cooling fin for the MOS tube is advantaged by that absorption of heat is stable, the temperature of the MOS is controlled so as not to exceed 120 DEG C, the thickness is small, and the temperature control cooling fin is suitable for an installation method for placement in a battery module.
Description
Technical field
The utility model relates to a kind of metal-oxide-semiconductor temperature and controls fin.
Background technology
Lithium-ions battery, due to its specific energy is large, and specific power is high, and the life-span is long, the pollution-free good characteristic of Denging, has become the first-selection that current many industries are used battery.In order to ensure that battery has good service behaviour; more safe and reliable and extend actual life; nearly all battery pack has all been equipped with the protective circuit that battery operated situation is managed, with the electric current of controlling the voltage discharging and recharging and allowing to pass through, the injury that battery is not abused.
The switch element metal-oxide-semiconductor that protective circuit is controlled by sampling comparison circuit and enforcement forms.Comparison circuit is to the voltage collecting, and current signal compares processing, is become to cut off circuit accordingly by metal-oxide-semiconductor conducting, and the electric current of circuit all passes through metal-oxide-semiconductor.So the caloric value of metal-oxide-semiconductor is large especially, temperature rise is also higher.The temperature rise that surpasses the metal-oxide-semiconductor limit or metal-oxide-semiconductor when On current is too high, just likely burns metal-oxide-semiconductor.The damage of metal-oxide-semiconductor can make protective circuit lose the defencive function to battery, and battery is come to harm, and also may cut off circuit completely, make running in equipment lose completely power supply become paralysis and have an accident.Therefore protect the safety of metal-oxide-semiconductor, to metal-oxide-semiconductor cooling, just become designer's a vital task.
In fact, metal-oxide-semiconductor has just considered generally have larger installation fin by heat dissipation problem when design, is convenient to contact with wiring board main body large area, is convenient to heat radiation, and some powerful metal-oxide-semiconductors also have fin.But in the situation that some is special, fin can not satisfy the demands.As operating current is very large, the time is short, and environment space is narrow and small, or original just in hot environment, and bad owing to dispelling the heat, the temperature rise of metal-oxide-semiconductor is very high, has just strengthened the danger of burning.
Summary of the invention
The metal-oxide-semiconductor temperature control fin that the purpose of this utility model is to provide a kind of good heat dissipation effect, has extended metal-oxide-semiconductor useful life.
For reaching goal of the invention the technical solution adopted in the utility model, be:
Metal-oxide-semiconductor temperature is controlled a fin, comprises heat sink body, it is characterized in that: in described heat sink body, by imbibition technique, be provided with pipeline, in described pipeline, be filled with phase-change material.
Further, the scope of the phase transition temperature of described phase-change material is between 80 ℃ ~ 120 ℃.
Technical conceive of the present utility model, in fin, be filled with phase-change material, due at the temperature of phase transformation, phase-change material can absorb a large amount of heat, and the object temperature that it can be adhered to maintains this phase transition temperature and can not raise, so just can control well the temperature of metal-oxide-semiconductor.And on fin, increasing pipeline by imbibition mode, the thickness of fin is still very thin, is applicable to be placed in battery module.
The beneficial effects of the utility model: heat absorption is stable, control MOS temperature and are no more than 120 degree, and thin thickness, is suitable for being placed on mounting means in battery module.
Accompanying drawing explanation
Fig. 1 is structural front view of the present utility model.
Fig. 2 is structure side view of the present utility model.
Embodiment
Below in conjunction with specific embodiment, the utility model is further described, but the utility model is not confined to these embodiments.One skilled in the art would recognize that the utility model contained all alternatives, improvement project and the equivalents that within the scope of claims, may comprise.
With reference to Fig. 1, Fig. 2, a kind of metal-oxide-semiconductor temperature is controlled fin, comprises heat sink body 1, in described heat sink body 1, by imbibition technique, is provided with pipeline 2, in described pipeline 2, is filled with phase-change material.
The scope of the phase transition temperature of described phase-change material is between 80 ℃ ~ 120 ℃.
Technical conceive of the present utility model, in fin, be filled with phase-change material, due at the temperature of phase transformation, phase-change material can absorb a large amount of heat, and the object temperature that it can be adhered to maintains this phase transition temperature and can not raise, so just can control well the temperature of metal-oxide-semiconductor.And on fin, increasing pipeline 2 by imbibition mode, the thickness of fin is still very thin, is applicable to be placed in battery module.
Claims (2)
1. metal-oxide-semiconductor temperature is controlled a fin, comprises heat sink body, it is characterized in that: in described heat sink body, by imbibition technique, be provided with pipeline, in described pipeline, be filled with phase-change material.
2. a kind of metal-oxide-semiconductor temperature according to claim 1 is controlled fin, it is characterized in that: the scope of the phase transition temperature of described phase-change material is between 80 ℃ ~ 120 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320634569.4U CN203562418U (en) | 2013-10-15 | 2013-10-15 | Temperature control cooling fin for MOS tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320634569.4U CN203562418U (en) | 2013-10-15 | 2013-10-15 | Temperature control cooling fin for MOS tube |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203562418U true CN203562418U (en) | 2014-04-23 |
Family
ID=50512120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320634569.4U Expired - Fee Related CN203562418U (en) | 2013-10-15 | 2013-10-15 | Temperature control cooling fin for MOS tube |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203562418U (en) |
-
2013
- 2013-10-15 CN CN201320634569.4U patent/CN203562418U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SUZHOU ANKAO ENERGY CO., LTD. Free format text: FORMER OWNER: XU YULIN Effective date: 20150724 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20150724 Address after: Huahong Street Industrial Park in Suzhou city of Jiangsu Province, No. 29 215000 Patentee after: ANKAO (SUZHOU) ENERGY Co.,Ltd. Address before: 310030, No. 208, vibration road, West Lake science and Technology Park, Hangzhou, Zhejiang Patentee before: Xu Yulin |
|
| PP01 | Preservation of patent right |
Effective date of registration: 20161031 Granted publication date: 20140423 |
|
| RINS | Preservation of patent right or utility model and its discharge | ||
| PD01 | Discharge of preservation of patent |
Date of cancellation: 20170430 Granted publication date: 20140423 |
|
| PD01 | Discharge of preservation of patent | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140423 Termination date: 20211015 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |