CN203521395U - Circuit arrangement structure capable of reducing temperature rising of transistor - Google Patents
Circuit arrangement structure capable of reducing temperature rising of transistor Download PDFInfo
- Publication number
- CN203521395U CN203521395U CN201320633015.2U CN201320633015U CN203521395U CN 203521395 U CN203521395 U CN 203521395U CN 201320633015 U CN201320633015 U CN 201320633015U CN 203521395 U CN203521395 U CN 203521395U
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- China
- Prior art keywords
- transistor
- power supply
- mosfet
- temperature rise
- circuit arrangement
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model relates to a circuit arrangement structure capable of reducing temperature rising of a transistor. The circuit arrangement structure comprises a power supply; a pasted and sealed MOSFET and peripheral paster elements; and cross pins for heat dissipation are arranged at the front side of the power supply. According to the utility model, under the circumstances that the power supply cost is not increased, the selectivity of the pasted and sealed MOSFET is increased; because of various cooling ways, the influence on the surrounding elements due to the high temperature of the MOSFT can be effectively avoided; and working stability and reliability of the MOSFT and the surrounding elements can be improved.
Description
Technical field
The utility model relates to the arrangement of elements structure on circuit board, is the circuit configuration structure that reduces transistor temperature rise concretely.
Background technology
Along with the arrival of energy crisis, efficient lighting technology obtains people and pays close attention to widely.LED (Light Emitting Ddiode) is to utilize semi-conductive PN junction or similar structures electric energy to be converted to the device of luminous energy, with advantages such as its high efficiency, low-power consumption, low voltage drive, long service life, in numerous applications, obtained general application, as each electronic product such as back light of mobile phone, PDA, LCD TV.For LCD TV, liquid crystal indicator comprises backlight module and liquid crystal panel, and backlight module is used to non-luminous liquid crystal panel own that light source is provided.No matter backlight module or liquid crystal panel, all needing power supply is its power supply.Existing most of power LED partly adopts control chip to drive to boost MOSFET(metal-oxide half field effect transistor) realize inversion, most of IC(integrated circuit of controlling wherein) the boost level of MOSFET of the driving of output is logic level, and its output high level is only 5V.Therefore, this logic level can limit the selection of the MOSFET that boosts to a great extent.If considering not increase on the basis of power supply cost (can increase cost if improve the driving force of chip), only drive with 5V voltage the MOSFET that boosts, the encapsulation of selectable MOSFET is sealing substantially.In existing power supply manufacturing process, the surface mount elements of power supply is to carry out wave-soldering after machine subsides point glue is fixed substantially.For SMD MOSFET, if fixedly time point glue area is excessive for some glue, in the time of can causing power supply to cross wave-soldering, MOSFET cannot fully contact with printed board, thereby affects the radiating effect of MOSFET.In this case, for making the temperature rise standard in MOSFET when work reach requirement, the MOSFET that used just need to ask that its thermal resistance is lower, junction capacitance is larger, and so the alternative of MOSFET will reduce greatly.
Utility model content
The utility model provides a kind of circuit configuration structure that reduces transistor temperature rise, can reduce paster MOSFET temperature rise, to strengthen adhesive type MOSFET radiating effect and to improve its reliability.
The utility model reduces the circuit configuration structure of transistor temperature rise, comprises power supply, is fixed with transistor (MOSFET) and the peripheral surface mount elements of adhesive type at the back side of power supply, in the front of power supply, be provided with for dispel the heat across pin.
Further, describedly across pin and the transistor of being located at the power supply back side, be oppositely arranged.Because the effect across pin is to be MOSFET heat radiation, therefore will be oppositely arranged and can reach better thermolysis across pin and MOSFET.
Preferably, seal peripheral surface mount elements≤10 that arrange in the scope of edge 7mm apart from transistor, when power circuit is arranged, reduce at other components and parts of adhesive type MOSFET periphery, to reduce the impact of element on MOSFET heat radiation as far as possible.The quantity of peripheral surface mount elements can be set accordingly according to actual conditions.
Further, at the transistorized dew copper face that is around also provided with, amass, edge and the minimum range between transistorized drain electrode that described dew copper face is long-pending are 2mm.Increase revealing copper face long-pending can be further also MOSFET heat radiation, reveal that copper face amasss and transistorized drain electrode between minimum range 2mm preferably, also can carry out other setting according to actual conditions.
The circuit configuration structure of minimizing transistor of the present utility model temperature rise, on the basis that does not increase power supply cost, increased the alternative of adhesive type MOSFET, high temperature while also effectively having avoided MOSFET work by various radiating modes impacts periphery components and parts, has improved job stability and the reliability of MOSFET itself and periphery components and parts.
Below in conjunction with the embodiment of embodiment, foregoing of the present utility model is described in further detail again.But this should be interpreted as to the scope of the above-mentioned theme of the utility model only limits to following example.Do not departing from the above-mentioned technological thought situation of the utility model, various replacements or the change according to ordinary skill knowledge and customary means, made, all should be included in scope of the present utility model.
Accompanying drawing explanation
Fig. 1 is the structural representation that the utility model reduces the circuit configuration structure of transistor temperature rise.
Embodiment
The utility model reduces the circuit configuration structure of transistor temperature rise as shown in Figure 1, comprise power supply 5, at the back side of power supply 5, be fixed with the transistor 1(MOSFET of adhesive type) and peripheral surface mount elements 2, in the front of power supply 5, be provided with 4 rows for dispel the heat across pin 3, have 8 legs, and described is oppositely arranged across pin 3 and the transistor 1 of being located at power supply 5 back sides, can reach better thermolysis.When power circuit is arranged, apart from transistor 1, seal 2≤10 of the peripheral surface mount elements that arrange in the scope of edge 7mm, reduce at other components and parts of adhesive type transistor 1 periphery, to reduce the impact of element on transistor 1 heat radiation as far as possible.On the other hand, also in surrounding's increase of transistor 1, arrange that to reveal copper face long-pending 4, revealing the edge of copper face long-pending 4 and the minimum range between the drain electrode of transistor 1 is 2mm, to strengthen its radiating effect.
Claims (4)
1. reduce the circuit configuration structure of transistor temperature rise, comprise power supply (5), the transistor (1) and the peripheral surface mount elements (2) that at the back side of power supply (5), are fixed with adhesive type, is characterized by: in the front of power supply (5), be provided with for dispel the heat across pin (3).
2. the circuit configuration structure of minimizing transistor as claimed in claim 1 temperature rise, is characterized by: described is oppositely arranged across pin (3) and the transistor (1) of being located at power supply (5) back side.
3. the circuit configuration structure of minimizing transistor as claimed in claim 2 temperature rise, is characterized by: the peripheral surface mount elements (2)≤10 arranging seal the scope of edge 7mm apart from transistor (1) in.
4. the circuit configuration structure of the minimizing transistor temperature rise as described in one of claims 1 to 3, it is characterized by: the surrounding at transistor (1) is provided with dew copper face long-pending (4), the minimum range between the long-pending edge of (4) of described dew copper face and the drain electrode of transistor (1) is 2mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320633015.2U CN203521395U (en) | 2013-10-14 | 2013-10-14 | Circuit arrangement structure capable of reducing temperature rising of transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320633015.2U CN203521395U (en) | 2013-10-14 | 2013-10-14 | Circuit arrangement structure capable of reducing temperature rising of transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203521395U true CN203521395U (en) | 2014-04-02 |
Family
ID=50380285
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320633015.2U Expired - Lifetime CN203521395U (en) | 2013-10-14 | 2013-10-14 | Circuit arrangement structure capable of reducing temperature rising of transistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203521395U (en) |
-
2013
- 2013-10-14 CN CN201320633015.2U patent/CN203521395U/en not_active Expired - Lifetime
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |