CN203519984U - Pixel structure, array substrate and liquid crystal display device - Google Patents

Pixel structure, array substrate and liquid crystal display device Download PDF

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Publication number
CN203519984U
CN203519984U CN201320560961.9U CN201320560961U CN203519984U CN 203519984 U CN203519984 U CN 203519984U CN 201320560961 U CN201320560961 U CN 201320560961U CN 203519984 U CN203519984 U CN 203519984U
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China
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electrode
sweep trace
sub
dot structure
signal wire
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CN201320560961.9U
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Chinese (zh)
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蔡佩芝
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Beijing BOE Optoelectronics Technology Co Ltd
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Beijing BOE Optoelectronics Technology Co Ltd
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Abstract

The utility model discloses a pixel structure and an array substrate containing the pixel structure and a liquid crystal display device containing the pixel structure. The pixel structure comprises a scanning line, a signal line, a slit electrode, a coupling electrode capable of forming an electric field in cooperation with the slit electrode, and a thin film transistor, wherein a plurality slits are formed in the slit electrode, the scanning line and the signal line are intersected and superposed to define at least two sub areas, and the coupling electrode comprises at least two sub electrodes respectively located in one sub area; the slit electrode corresponds to all the sub areas, and the slits located in different sub areas extend in different directions. Thus, visual angles in different directions can be enlarged, and compared with the prior art, the color cast can be effectively removed, the opening efficiency can be effectively improved, and the display quality can be remarkably improved.

Description

A kind of dot structure and array base palte, liquid crystal indicator
Technical field
The utility model relates to lcd technology, is specifically related to a kind of dot structure and array base palte, liquid crystal indicator.
Background technology
At present, the dot structure of thin-film transistor LCD device (TFT-LCD) can improve colour cast by the self compensation of liquid crystal, and the effect of still doing like this expansion visual angle is limited, still cannot make the visual angle of different directions effectively be expanded.And in traditional dot structure, grid/source stray capacitance is easy to change along with the deviation of technique, this causes the leaping voltage of different viewing areas different, and picture may occur that flicker or ghost etc. are bad, affects product quality.
Utility model content
In view of this, fundamental purpose of the present utility model is to provide a kind of dot structure and array base palte, liquid crystal indicator, to eliminate colour cast, improves display quality.
For achieving the above object, the technical solution of the utility model is achieved in that
The utility model provides a kind of dot structure, comprises sweep trace, signal wire, gap electrode, can coordinate with gap electrode coupling electrode and the thin film transistor (TFT) that forms electric field, is formed with many slits on described gap electrode; It is characterized in that, described sweep trace and described signal wire intersect stacked and limit at least two sub regions, and described coupling electrode comprises at least two sub-electrodes that lay respectively at subregion described in; Corresponding all subregions of described gap electrode and to be positioned at the slit bearing of trend of different subregions different.
Further, described thin film transistor (TFT) comprise be positioned at sweep trace top and with the active layer of sweep trace insulation, also comprise and be positioned at the drain electrode that sweep trace top and orthogonal projection are all positioned at sweep trace; Described signal wire is positioned at described active layer top and is connected with described active layer, and described drain electrode is mated with the appropriate section of described signal wire as source electrode.
Further, described sweep trace is widened to one or both sides corresponding to the part of described thin film transistor (TFT).
Further, in described sub-electrode, have two sub-electrodes to be positioned at the same side of described signal wire, these two sub-electrodes connect by the connecting bridge with layer; Described drain electrode is connected with described connecting bridge.
Further, described signal wire both sides include two sub-electrodes and the described thin film transistor (TFT) connecting by connecting bridge, and the drain electrode of described thin film transistor (TFT) is all connected with described connecting bridge.
Further, described dot structure is all symmetrical with respect to described sweep trace and described signal wire.
Further, described coupling electrode is pixel electrode, and described gap electrode is public electrode.
The utility model also provides a kind of array base palte, comprises dot structure as above.
The utility model also provides a kind of liquid crystal indicator, comprises array base palte as above.
Further, also comprise color membrane substrates, described color membrane substrates comprises black matrix layer, and described black matrix layer covers the region between described dot structure, also covers described sweep trace and described signal wire in described dot structure.
In dot structure of the present utility model and the array base palte that comprises this dot structure, liquid crystal indicator, comprise sweep trace, signal wire, gap electrode, can coordinate with gap electrode coupling electrode and the thin film transistor (TFT) that forms electric field, on described gap electrode, be formed with many slits; Described sweep trace and described signal wire intersect stacked and limit at least two sub regions, and described coupling electrode comprises at least two sub-electrodes that lay respectively at subregion described in; Corresponding all subregions of described gap electrode and to be positioned at the slit bearing of trend of different subregions different.Therefore the visual angle of different directions is expanded, and prior art can effectively be eliminated colour cast relatively, and aperture opening ratio can be effectively provided, and obviously improves display quality.
Accompanying drawing explanation
Fig. 1 is the dot structure figure of the utility model embodiment;
Fig. 2 is the partial perspective enlarged drawing of sweep trace and signal wire intersection in Fig. 1;
Fig. 3 is that the dot structure of the utility model embodiment is along the sectional view of sweep trace bearing of trend;
Description of reference numerals:
1, signal wire; 2, active layer; 3, coupling electrode; 4, gap electrode; 5, source electrode; 6, sweep trace; 7, insulation course; 8, passivation layer; 9, glass substrate; 10, connecting bridge.
Embodiment
Below in conjunction with accompanying drawing, the embodiment of a kind of dot structure that the utility model embodiment is provided and array base palte, liquid crystal indicator is described in detail.
In accompanying drawing, each layer film thickness and shape do not reflect the true ratio of array base palte, and object is signal explanation the utility model content just.
The utility model embodiment provides a kind of dot structure, in general, dot structure of the present utility model mainly comprises sweep trace 6, signal wire 1, gap electrode 4, can coordinate with gap electrode coupling electrode 3 and the TFT that forms electric field, on described gap electrode 4, is formed with many slits; Wherein, described sweep trace 6 and described signal wire 1 intersect stacked and limit at least two sub regions, and described coupling electrode comprises at least two sub-electrodes that lay respectively at subregion described in; Corresponding all subregions of described gap electrode and to be positioned at the slit bearing of trend of different subregions different.
Conventionally, coupling electrode, gap electrode can exchange, and the utility model be take coupling electrode, gap electrode and is respectively pixel electrode, public electrode and is described as example.
Described thin film transistor (TFT) comprise be positioned at sweep trace top and with the active layer of sweep trace insulation, also comprise and be positioned at the drain electrode that sweep trace top and orthogonal projection are all positioned at sweep trace; Described signal wire is positioned at described active layer top and is connected with described active layer, and described drain electrode is mated with the appropriate section of described signal wire as source electrode.
Particularly, referring to Fig. 2, process deviation is brought to the problem of coupling capacitance (Cgs) skew between grid and source electrode 5, can be by source electrode 5 Direct precipitations on sweep trace 6, be that sweep trace 6 parts are served as grid, the dot structure of this Cgs of having self-compensating function has been stablized the Cgs numerical value of zones of different, thereby has guaranteed the homogeneity of leaping voltage, effectively improves product quality.And coupling electrode 3 can directly be overlapped with source electrode 5 by connecting bridge 10, without being connected by via hole, so that improving product yield.
By source electrode with drain electrode exchange in the situation that, described TFT can comprise be positioned at sweep trace 6 tops and with the active layer 2 of sweep trace 6 insulation, also comprise and be positioned at the drain electrode 5 that sweep trace 6 tops and orthogonal projection are all positioned at sweep trace 6; Signal wire 1 is positioned at active layer 2 tops and is connected with active layer 2, and described drain electrode 5 is mated with the appropriate section of signal wire 1 as source electrode.
Visible, because described drain electrode 5 is produced on the top of sweep trace 6 completely, thereby the manufacture deviation of drain electrode 5 positions can 5 not exert an influence with the overlapping area of grid to draining conventionally, thereby the grid that can guarantee variant TFT is consistent with the stray capacitance between drain electrode, finally guarantee the consistance of each pixel display quality.
By Fig. 2, be also shown in, sweep trace 6 is widened to one or both sides corresponding to the part of TFT.Like this, in the situation that channel width is constant, can increase the breadth length ratio of TFT, to improve TFT charging performance.
In addition, as seen from Figure 2, two sub-electrodes that driven by same TFT, can connect by the connecting bridge 10 with layer; Described drain electrode 5 is connected with described connecting bridge.Particularly, in described sub-electrode, can have two sub-electrodes to be positioned at the same side of signal wire 1, these two sub-electrodes connect by the connecting bridge 10 with layer.Certainly, signal wire 1 both sides can include two sub-electrodes and a TFT who connects by connecting bridge 10, and the drain electrode of this TFT is connected with connecting bridge 10.
The width of connecting bridge 10 can be less than the width of coupling electrode 3 as shown in Figure 2, also can be identical with the width of coupling electrode 3.
In actual applications, the different sub-electrodes of coupling electrode 3 can be divided and are arranged, rather than all different sub-electrodes are arranged as a whole; For different sub-electrodes, same or different TFT can be set, make a TFT can drive one or at least two sub-electrodes; This is expanded the visual angle of different directions, can effectively eliminate colour cast, and aperture opening ratio can be effectively provided, and obviously improves display quality.
Dot structure in Fig. 1 is all symmetrical with respect to sweep trace 6 and signal wire 1, makes picture disply quality better.
Coupling electrode 3 is generally pixel electrode, and gap electrode 4 is generally public electrode.Certainly, coupling electrode 3 also can be exchanged with gap electrode 4.
Based on same utility model design, the utility model embodiment also provides a kind of array base palte, comprises above-mentioned dot structure.Can on glass substrate, design dot structure of the present utility model to form array base palte, but substrate of the present utility model is not limited to glass substrate.
Based on same utility model design, the utility model embodiment also provides a kind of liquid crystal indicator, comprises above-mentioned array base palte.
In addition, because the interaction of liquid crystal causes the yawing moment of liquid crystal to tanglewrack at the intersection of different sub-electrodes, therefore, can carry out the following setting of blocking:
By the array base palte with being designed with dot structure of the present utility model to the color membrane substrates of box on, setting covers the black matrix layer of the different sub-electrode intersections of coupling electrode 3, such as: described black matrix layer covers sweep trace 6 and the signal wire 1 in described dot structure.
The above-mentioned set-up mode that blocks can be optimized the liquid crystal deflecting element direction confusion phenomena of the different sub-electrode intersections of coupling electrode 3 effectively, improves display quality.
Certainly, described black matrix layer also will cover the region between described dot structure.
In addition, the partial electrode at gap electrode and sweep trace and the overlapping place of signal wire or whole electrode can be hollowed out, to reduce the overlapping area between gap electrode and sweep trace and signal wire, and then effectively reduce coupling capacitance, reduce power consumption.
In actual applications, based on foregoing, can carry out diversified setting, setting as shown in Figure 1.Due to capped, so in Fig. 1, do not mark active layer 2, the source electrode 5 in Fig. 2.In Fig. 1, sweep trace 6 and signal wire 1 intersect stacked and limit four sub regions, and coupling electrode 3 comprises four sub-electrodes that lay respectively at described four sub regions.Certainly, if sweep trace 6 or signal wire 1 are positioned at the edge of dot structure shown in Fig. 1,1 of sweep trace 6 and signal wire intersect stacked and limit two sub regions so.
Dot structure in Fig. 1 is all symmetrical with respect to sweep trace 6 and signal wire 1, makes picture disply quality better.Coupling electrode 3 comprises centrosymmetric four sub-electrodes, makes coupling electrode 3 all symmetrical in X and Y-direction, that is: for a side (left side or right side) of the longitudinal centre line of coupling electrode 3, coupling electrode 3 is symmetrical with cross central line; For a side (upside or downside) of the cross central line of coupling electrode 3, coupling electrode 3 is symmetrical with longitudinal centre line.This is expanded the visual angle of four direction, can effectively eliminate colour cast, obviously improves display quality.
In addition, signal wire 1 and sweep trace 6 are arranged on to the different sub-electrode intersections of coupling electrode 3, as: signal wire 1 is longitudinally arranged on the longitudinal centre line of coupling electrode 3, sweep trace 6 is horizontally installed on the cross central line of coupling electrode 3.
In four sub-electrodes that comprise at coupling electrode 3, can a TFT be set for two sub-electrodes wherein, then for two other sub-electrode arranges a TFT, so that each TFT can drive two sub-electrodes, improve aperture opening ratio.Such as: two, the left side sub-electrode being marked off by signal wire 1 for coupling electrode 3 and two, the right sub-electrode, can arrange a TFT for two, 1 left side of signal wire sub-electrode, then for two, 1 the right of signal wire sub-electrode, a TFT is set; Or, for coupling electrode 3, be scanned two of tops sub-electrode and following two sub-electrodes that line 6 marks off, can a TFT be set for two of 6 tops of sweep trace sub-electrode, then for following two sub-electrodes of sweep trace 6, a TFT be set.
Conventionally, the state of above-mentioned two TFT is consistent.As shown in Figure 2, the technique that is used to form structure shown in Fig. 2 can be the 5 mask Mask techniques of commonly using to concrete annexation between sub-electrode and TFT, mainly comprises following technological process:
(1) on glass substrate 9, deposit gate metal, form grid line;
(2) successive sedimentation GI, a-Si, n+a-Si multilayer film;
(3) deposition SD metal, forms signal wire 1 and TFT raceway groove;
(4) deposition ground floor ITO, forms coupling electrode 3;
(5) deposition PVX layer;
(6) deposition second layer ITO, forms gap electrode 4.
It should be noted that, form the required technique of structure shown in Fig. 2 varied, foregoing just be take Fig. 3 and is described as example.In addition, source electrode 5 with as the signal wire 1 of drain electrode, conventionally can exchange.
Visible in sum, in dot structure of the present utility model and the array base palte that comprises this dot structure, liquid crystal indicator, comprise sweep trace, signal wire, gap electrode, can coordinate with gap electrode coupling electrode and the TFT that forms electric field, on described gap electrode, be formed with many slits; Described sweep trace and described signal wire intersect stacked and limit at least two sub regions, and described coupling electrode comprises at least two sub-electrodes that lay respectively at subregion described in; Corresponding all subregions of described gap electrode and to be positioned at the slit bearing of trend of different subregions different.Therefore the visual angle of different directions is expanded, and prior art can effectively be eliminated colour cast relatively, and aperture opening ratio can be effectively provided, and obviously improves display quality.
The above, be only preferred embodiment of the present utility model, is not intended to limit protection domain of the present utility model.

Claims (10)

1. a dot structure, comprises sweep trace, signal wire, gap electrode, can coordinate with gap electrode coupling electrode and the thin film transistor (TFT) that forms electric field, is formed with many slits on described gap electrode; It is characterized in that, described sweep trace and described signal wire intersect stacked and limit at least two sub regions, and described coupling electrode comprises at least two sub-electrodes that lay respectively at subregion described in; Corresponding all subregions of described gap electrode and to be positioned at the slit bearing of trend of different subregions different.
2. dot structure according to claim 1, is characterized in that, described thin film transistor (TFT) comprise be positioned at sweep trace top and with the active layer of sweep trace insulation, also comprise and be positioned at the drain electrode that sweep trace top and orthogonal projection are all positioned at sweep trace; Described signal wire is positioned at described active layer top and is connected with described active layer, and described drain electrode is mated with the appropriate section of described signal wire as source electrode.
3. dot structure according to claim 1, is characterized in that, described sweep trace is widened to one or both sides corresponding to the part of described thin film transistor (TFT).
4. according to the dot structure described in claim 2 or 3, it is characterized in that, in described sub-electrode, having two sub-electrodes to be positioned at the same side of described signal wire, these two sub-electrodes connect by the connecting bridge with layer; Described drain electrode is connected with described connecting bridge.
5. dot structure according to claim 4, is characterized in that, described signal wire both sides include two sub-electrodes and the described thin film transistor (TFT) connecting by connecting bridge, and the drain electrode of described thin film transistor (TFT) is all connected with described connecting bridge.
6. dot structure according to claim 1, is characterized in that, described dot structure is all symmetrical with respect to described sweep trace and described signal wire.
7. dot structure according to claim 1, is characterized in that, described coupling electrode is pixel electrode, and described gap electrode is public electrode.
8. an array base palte, is characterized in that, comprises the dot structure as described in claim 1 to 7 any one.
9. a liquid crystal indicator, is characterized in that, comprises array base palte as claimed in claim 8.
10. liquid crystal indicator according to claim 9, it is characterized in that, also comprise color membrane substrates, described color membrane substrates comprises black matrix layer, described black matrix layer covers the region between described dot structure, also covers described sweep trace and described signal wire in described dot structure.
CN201320560961.9U 2013-09-10 2013-09-10 Pixel structure, array substrate and liquid crystal display device Expired - Lifetime CN203519984U (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104423111A (en) * 2013-09-10 2015-03-18 北京京东方光电科技有限公司 Pixel structure, array substrate and liquid crystal display device
CN104570517A (en) * 2014-12-31 2015-04-29 友达光电股份有限公司 Pixel structure
US9773816B2 (en) 2013-09-10 2017-09-26 Boe Technology Group Co., Ltd. Pixel unit, array substrate and liquid crystal display

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104423111A (en) * 2013-09-10 2015-03-18 北京京东方光电科技有限公司 Pixel structure, array substrate and liquid crystal display device
WO2015035725A1 (en) * 2013-09-10 2015-03-19 京东方科技集团股份有限公司 Pixel unit and array substrate, and liquid crystal display device
US9773816B2 (en) 2013-09-10 2017-09-26 Boe Technology Group Co., Ltd. Pixel unit, array substrate and liquid crystal display
CN104423111B (en) * 2013-09-10 2018-04-10 北京京东方光电科技有限公司 A kind of dot structure and array base palte, liquid crystal display device
CN104570517A (en) * 2014-12-31 2015-04-29 友达光电股份有限公司 Pixel structure

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