CN203519539U - Indoor temperature gas sensor element based on tungsten trioxide film - Google Patents
Indoor temperature gas sensor element based on tungsten trioxide film Download PDFInfo
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- CN203519539U CN203519539U CN201320651445.7U CN201320651445U CN203519539U CN 203519539 U CN203519539 U CN 203519539U CN 201320651445 U CN201320651445 U CN 201320651445U CN 203519539 U CN203519539 U CN 203519539U
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Abstract
The utility model discloses an indoor temperature gas sensor element based on a tungsten trioxide film. The indoor temperature gas sensor element is characterized in that a monocrystalline silicon substrate of single face polishing of p-type (100) crystal orientation is provided with platinum interdigital electrodes, the upper parts of the platinum interdigital electrodes and a polishing surface of a silicon substrate are provided with tungsten trioxide gas-sensitivity films, and the thicknesses of the gas-sensitivity films are 300nm. The indoor temperature gas sensor element provided by the utility model has the advantages that the nitrogen dioxide gas with the low concentration (0.1ppm), the indoor temperature gas sensor element provided by the utility model has the air-sensitive characteristics that the sensitivity is high, the response/recovery is rapid, the selectivity is good, and the repeatability is good.
Description
Technical field
The utility model, about gas sensor, relates in particular to the nitrogen dioxide gas sensor element based on silica-based WO 3 film of working under a kind of room temperature.
Background technology
Modern industry growing when uplifting the people's living standard, has also brought inevitable destruction to ecologic environment.The nitrogen dioxide discharging in the burning of organic substance decomposing, fossil fuel and the production run of chemical industry is a kind of common atmosphere pollution, is one of main matter forming acid rain and photo-chemical smog, very big to the infringement of environment.Therefore, the research of nitrogen dioxide gas sensor element is had great importance and development prospect.
Tungstic acid gas sensitive due to high to gas sensitivities such as nitrogen dioxide, ammonias, response/release time is short, and has the measurement of being easy to and control, the advantage such as cheap, has been subject to researchist's extensive concern.At present both at home and abroad the WO 3 film material of researcher He Ben seminar based on gas-sensitive property research is N-shaped semiconductor, and being placed in air film surface can adsorb oxygen ion, with oxidized form gas (as NO
2deng) after contact, conductivity declines, resistance rises, the variation of resistance is proportional with the concentration that detects gas, but the working temperature of N-shaped tungstic acid semiconductor film film gas transducer is generally more than 200 ℃, and power consumption is larger, be unfavorable for realizing the integrated and intelligent of gas sensor.Along with the enhancing of people's environmental consciousness, gas sensor is had higher requirement, realize sensor microminiaturization, low-power consumption and highly integrated be the important research direction in one, this field.
To this, the utility model be take p-type monocrystalline silicon as substrate, adopt sol-gal process in substrate, to prepare tungstic trioxide nano-film, propose the research of p-type WO 3 film gas sensor, intend exploitation and a kind ofly there is higher sensitivity, be easy to realize silica-based integrated Novel Room Temperature gas sensor element with microelectronic process engineering compatibility.
Summary of the invention
The purpose of this utility model, to overcome the higher shortcoming of traditional tungstic acid gas sensitive working temperature, further improve the sensitive property of tungstic acid material to oxides of nitrogen gas, provide a kind of preparation method simple, realize under room temperature oxides of nitrogen gas extremely low concentration surveyed, the silica-based tungsten oxide film gas sensor of the Novel low power consumption element of the excellent gas-sensitive properties such as response/recovery fast, high selectivity, good recovery.
The utility model is achieved by following technical solution:
A kind of room temperature air sensor element based on WO 3 film, the silicon chip 1 and interdigital electrode 2 that comprise single-sided polishing, it is characterized in that, on the polished surface of described silicon chip 1, be provided with interdigital electrode 2, above the polished surface of interdigital electrode 2 and silicon chip 1, be provided with tungstic acid gas sensing property film 3.
Described interdigital electrode 2 is platinum interdigital electrode.
The silicon chip 1 of described single-sided polishing is the monocrystalline silicon substrate of the single-sided polishing in p-type 100 crystal orientation.
The thickness of described tungstic acid gas sensing property film 3 is 300nm.
This gas sensor element at room temperature shows as the characteristic of semiconductor of p-type to low concentration nitrogen dioxide.
The utility model provides a kind of can at room temperature survey low concentration (0.1ppm) nitrogen dioxide gas, and has high sensitivity, fast response/recover, silica-based gas-sensitive WO 3 film sensor element that selectivity is good, reproducible; Silica-based WO 3 film thickness, in 300nm left and right, at room temperature shows as the semi-conductive gas-sensitive property of p-type to nitrogen dioxide gas.
Accompanying drawing explanation
Fig. 1 is the structural representation of the room temperature air sensor element of the utility model based on WO 3 film:
Fig. 2 is the room temperature air sensor element based on WO 3 film of the present utility model response/recovery curve figure to 2ppm nitrogen dioxide under different working temperatures;
Fig. 3 is the at room temperature dynamic continuous response/recovery curve figure to variable concentrations nitrogen dioxide gas of the room temperature air sensor element of the utility model based on WO 3 film;
Fig. 4 is the at room temperature selectivity schematic diagram to gas with various of the room temperature air sensor element of the utility model based on WO 3 film.
In Fig. 1, Reference numeral is as follows:
1------silicon chip 2------interdigital electrode
3------tungstic acid gas sensing property film
Embodiment
Below in conjunction with specific embodiment, the utility model is further described.
As shown in Figure 1, the room temperature air sensor element of the utility model based on WO 3 film, the silicon chip 1 and interdigital electrode 2 that comprise single-sided polishing, described silicon chip 1 is the monocrystalline silicon substrate of the single-sided polishing in p-type <100> crystal orientation, on its polished surface, be provided with interdigital electrode 2, this interdigital electrode is platinum interdigital electrode; Above the polished surface of interdigital electrode 2 and silicon chip 1, be provided with tungstic acid gas sensing property film 3, the thickness of this tungstic acid gas sensing property film 3 is 300nm left and right.
The preparation method of tungstic acid gas sensing property film of the present utility model is as follows:
(1) Wafer Cleaning
By resistivity, be 10～15 Ω cm, thickness is 400 μ m, the monocrystalline silicon piece of the p-type single-sided polishing in <100> crystal orientation, cut into the rectangular silicon substrate that is of a size of 2.5cm * 1cm, put into the hydrogen peroxide preparing: the concentrated sulphuric acid=1:3 cleaning fluid soaks 40 minutes, removes surperficial organic contaminant; The hydrofluoric acid aqueous solution of putting into massfraction 5% after deionized water rinsing soaks 30 minutes, removes surface oxide layer; After deionized water rinsing, put into successively again the ultrasonic cleaning 15 minutes respectively of acetone solvent, absolute ethyl alcohol, deionized water, wash surperficial ion and organic impurities, dry for standby.
(2) sputter platinum interdigital electrode
The vacuum chamber that p-type monocrystalline silicon substrate sample after cleaning and drying is placed in to DPS-III type ultrahigh vacuum facing-target magnetron sputtering system equipment, target is the metal platinum of quality purity 99.95%, and working gas is the argon gas of quality purity 99.999%, and body vacuum tightness is 4 * 10
-4pa, substrate temperature is room temperature, and argon gas flow is 23mL/min, and during sputter, operating pressure is 2Pa, and sputtering power is 90W, sputtering time is 10min, in single polished surface sputter formation platinum interdigital electrode of silicon chip.
(3) preparation of the gas sensor element based on WO 3 film
Adopt collosol and gel spin-coating method in sputter, to have the polished surface growth WO 3 film of the monocrystalline silicon substrate of platinum interdigital electrode.Precursor tungsten hexachloride used and absolute ethyl alcohol be 1:10 preparation colloidal sol in mass ratio, by sol evenning machine, adopt spin-coating method that prepared colloidal sol is coated onto to the silicon wafer polishing surface that sputter has platinum interdigital electrode equably, even glue number of times is 3 times, each even glue consumption is 8, spin speed is 2500r/min, and the spin coating time is 60s.Then the sample substrate after even glue spin coating is placed in to muffle furnace and heat-treats, heat treatment temperature is 400 ℃, and heat treatment time is 2h, makes the gas sensor element based on WO 3 film.
Above-mentioned silica-based WO 3 film gas sensor element under room temperature, the working temperature of 50,100,150,200 ℃ to 2ppm NO
2sensitivity be respectively 3.32,1.21,1.12,0.88,0.87, as shown in Figure 2.Illustrated that this gas sensor element shows as p-type Semiconductor gas sensors characteristic below at 100 ℃, and optimum working temperature is room temperature.
Above-mentioned silica-based WO 3 film gas sensor element is at room temperature to variable concentrations NO
2the dynamic response curve of gas as shown in Figure 3, to 0.1,0.25,0.5,1,2ppm NO
2sensitivity be respectively 1.06,1.38,1.89,2.78,3.22.The NO of this gas sensor element to low concentration has been described
2there is obvious response and preferably reversible restorative, and the NO to 2ppm
2response time is 9s, has the response characteristic being exceedingly fast.
Above-mentioned silica-based WO 3 film gas sensor element is at room temperature to 2ppm NO
2, 50ppm NH
3, 100ppm ethanol, 100ppm acetone sensitivity be respectively 3.22,1.12,1.07,1.02.Illustrated that this gas sensor element at room temperature has splendid selectivity to the nitrogen dioxide gas of low concentration, as shown in Figure 4.
Claims (5)
1. the room temperature air sensor element based on WO 3 film, the silicon chip (1) and interdigital electrode (2) that comprise single-sided polishing, it is characterized in that, on the polished surface of described silicon chip (1), be provided with interdigital electrode (2), above the polished surface of interdigital electrode (2) and silicon chip (1), be provided with tungstic acid gas sensing property film (3).
2. according to the room temperature air sensor element based on WO 3 film of claim 1, it is characterized in that, described interdigital electrode (2) is platinum interdigital electrode.
3. according to the room temperature air sensor element based on WO 3 film of claim 1, it is characterized in that, the silicon chip of described single-sided polishing (1) is the monocrystalline silicon substrate of the single-sided polishing in p-type 100 crystal orientation.
4. according to the room temperature air sensor element based on WO 3 film of claim 1, it is characterized in that, the thickness of described tungstic acid gas sensing property film (3) is 300nm.
5. according to the room temperature air sensor element based on WO 3 film of claim 1, it is characterized in that, this gas sensor element at room temperature shows as the characteristic of semiconductor of p-type to low concentration nitrogen dioxide.
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| TWI658275B (en) * | 2014-05-28 | 2019-05-01 | 日商日東電工股份有限公司 | Gas sensor element |
| CN105651815A (en) * | 2014-11-12 | 2016-06-08 | 长沙理工大学 | Nitrogen dioxide sensor and preparation method thereof |
| CN105651814A (en) * | 2014-11-12 | 2016-06-08 | 长沙理工大学 | Nanometer tin-sulfide-based gas sensor and preparation method thereof |
| CN105651815B (en) * | 2014-11-12 | 2018-07-31 | 长沙理工大学 | A kind of nitrogen dioxide sensor and preparation method thereof |
| CN105891126A (en) * | 2015-06-30 | 2016-08-24 | 四川智立方博导科技有限责任公司 | Low-cost portable hydrogen optical sensor |
| CN105928935A (en) * | 2016-04-21 | 2016-09-07 | 林业城 | Garbage treating machine with gas sensing function |
| CN105954201A (en) * | 2016-04-21 | 2016-09-21 | 林业城 | Balloon aerating device which can inspect hydrogen leakage |
| CN105928936A (en) * | 2016-04-21 | 2016-09-07 | 林业城 | Fume cupboard capable of realizing visual detection of gas leakage |
| CN105911054A (en) * | 2016-04-21 | 2016-08-31 | 林业城 | Microbiological treatment system based on gas detection |
| CN105928931A (en) * | 2016-04-21 | 2016-09-07 | 林业城 | Sewage treating pool with gas sensing function |
| CN105928932A (en) * | 2016-04-21 | 2016-09-07 | 林业城 | High-security welding apparatus based on visualization |
| CN105928934A (en) * | 2016-04-21 | 2016-09-07 | 林业城 | Anti-lightening power distribution cabinet based on gasochromic gas sensor |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140402 Termination date: 20151021 |
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| EXPY | Termination of patent right or utility model |