CN203455448U - High-power microwave damaging effect simulation analyzer for integrated circuit - Google Patents
High-power microwave damaging effect simulation analyzer for integrated circuit Download PDFInfo
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- CN203455448U CN203455448U CN201320402440.0U CN201320402440U CN203455448U CN 203455448 U CN203455448 U CN 203455448U CN 201320402440 U CN201320402440 U CN 201320402440U CN 203455448 U CN203455448 U CN 203455448U
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- control module
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- damaging effect
- power microwave
- spectrum analyzer
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Abstract
The utility model belongs to the field of microwave damaging effect simulation analyzers and provides a high-power microwave damaging effect simulation analyzer for an integrated circuit, which is characterized in that an electromagnetic property scanning panel is positioned at the top of a cuboid shell. A spectrum analyzer display screen, a liquid crystal display screen, a switching on/off key, a scanning starting/pausing key, and an analysis starting/pausing key are arranged on the front surface of the cuboid shell. A power plug is arranged on the back surface of the cuboid shell. According to the technical scheme of the utility model, the problems in the prior art that, the experimental measurement and the analog simulation on the high-power microwave damaging effect are independent from each other so as to cause the acquisition period of the damaging effect to be longer and the acquisition step thereof to be tedious, can be solved. Meanwhile, the experimental process and the analog simulation on the high-power microwave damaging effect for the integrated circuit are integrated as a whole and the simulation analysis is carried out directly by means of testing data. Therefore, the analysis process is simplified and the result of the damaging effect can be quickly acquired.
Description
Technical field
The utility model relates to a kind of sunykatuib analysis instrument, the sunykatuib analysis instrument that particularly a kind of High-Power Microwave damage effect that is applied to integrated circuit is analyzed.
Background technology
Integrated circuit High-Power Microwave damage effect research both at home and abroad is at present statistical method by experiment, in conjunction with data fitting, obtains a lot of general conclusions.But it is complicated that the shortcoming of this method is exactly experiment test process; And then utilize test data of experiment to carry out data processing, and obtain the whole flow process length consuming time of integrated circuit High-Power Microwave damage effect analysis result.Existing market is badly in need of a kind ofly can simplifying experiment test process, and by the sunykatuib analysis instrument that experiment test process and data analysis process combine, can to the High-Power Microwave damage effect of integrated circuit, carry out sunykatuib analysis fast.
Utility model content
The purpose of this utility model is the weak point that overcomes the sunykatuib analysis of existing integrated circuit High-Power Microwave damage effect, experiment test process is combined with data analysis process, experimental results, as the input of data analysis process, provides a kind of sunykatuib analysis instrument that can obtain convenient, fast High-Power Microwave damage effect sunykatuib analysis result.It is characterized in that, electromagnetic property scanning board is positioned at rectangular parallelepiped cover top portion, spectrum analyzer display screen, LCDs, ON/OFF key, sweep start/Pause key and analysis startup/Pause key are positioned at rectangular parallelepiped outer casing frontispiece, and attaching plug is positioned at the rectangular parallelepiped shell back side.
Described rectangular parallelepiped enclosure, microcontroller connects respectively power module, scan control module, analysis and Control module, liquid crystal display control module, scanning board control module and spectrum analyzer control module.
Described electromagnetic property scanning board and spectrum analyzer are controlled by scanning board control module and spectrum analyzer control module respectively, for electromagnetic interference (EMI) frequency, the crest voltage U of testing integrated circuits
m, pulse width t, pulse repetition rate
pPSoperating voltage U with integrated circuit
0.Wherein electromagnetic property scanning board can adopt EMSCAN electromagnetism test scan plate, and spectrum analyzer can adopt the FSL series spectrum analyzer of R & S company.
Described LCDs, for display simulation analysis result, is controlled by liquid crystal display control module, and is connected with microcontroller.
Described ON/OFF key, for the opening and closing of control simulation analyser, is controlled by power module, and is connected with attaching plug, microcontroller.
Described sweep start/Pause key, for controlling startup and the time-out of electromagnetic property scanning board, is controlled by scan control module, and is connected with microcontroller.
Described analysis startup/Pause key, for controlling startup and the time-out of spectrum analyzer, is controlled by spectrum analyzer control module, and is connected with microcontroller.
The beneficial effects of the utility model are that to have solved experiment test and the analog simulation process of High-Power Microwave damage effect in the past independent separately, obtain the damage effect result cycle long, the problem of complex steps, integrated circuit High-Power Microwave damage effect experimentation is combined with sunykatuib analysis process, directly utilize test data to carry out sunykatuib analysis, simplify analysis process, can obtain fast damage effect result.
Accompanying drawing explanation
Fig. 1 is schematic appearance of the present utility model;
Fig. 2 is interconnector schematic diagram of the present utility model.
In figure:
1-electromagnetic property scanning board, 2-spectrum analyzer display screen, 3-ON/OFF key, 4-sweep start/Pause key, 5-analyzes startup/Pause key, 6-LCDs, 7-attaching plug, 8-rectangular parallelepiped shell.
Embodiment
The utility model provides a kind of integrated circuit High-Power Microwave damage effect sunykatuib analysis instrument, below in conjunction with Fig. 1, Fig. 2 and concrete case study on implementation, is explained.
Fig. 1, Fig. 2 have provided schematic appearance and the interconnector schematic diagram of integrated circuit High-Power Microwave damage effect sunykatuib analysis instrument.In Fig. 1, electromagnetic property scanning board (1) is positioned at rectangular parallelepiped cover top portion, spectrum analyzer display screen (2), LCDs (6), ON/OFF key (3), sweep start/Pause key (4) and analysis startup/Pause key (5) are positioned at rectangular parallelepiped outer casing frontispiece, and attaching plug (7) is positioned at the rectangular parallelepiped shell back side.In Fig. 2, power module is microcontroller power supply, and microcontroller connects respectively scan control module, analysis and Control module, liquid crystal display control module, scanning board control module and spectrum analyzer control module.
In conjunction with Fig. 1 and Fig. 2, integrated circuit High-Power Microwave damage effect sunykatuib analysis instrument in use, first attaching plug (7) is connected to 220v power supply, press ON/OFF key (3) and start sunykatuib analysis instrument, the integrated circuit of normal operation to be analyzed is placed on electromagnetic property scanning board (1), press sweep start/Pause key (4), start the electromagnetic property of integrated circuit to scan, meanwhile, spectrum analyzer is started working, it is upper that scanning result is presented at spectrum analyzer display screen (2), again presses sweep start/Pause key (4), stops scanning.Press and analyze startup/Pause key (5), microcontroller extracts electromagnetic interference (EMI) parameter-electromagnetic interference (EMI) frequency, crest voltage U
m, pulse width t, pulse repetition rate
pPSoperating voltage U with integrated circuit
0, the sunykatuib analysis of the line integrated circuit of going forward side by side High-Power Microwave damage effect, final analysis result is presented in LCDs (6).Press ON/OFF key (3), sunykatuib analysis instrument quits work.
Claims (2)
1. integrated circuit High-Power Microwave damage effect sunykatuib analysis instrument, it is characterized in that, electromagnetic property scanning board is positioned at rectangular parallelepiped cover top portion, spectrum analyzer display screen, LCDs, ON/OFF key, sweep start/Pause key and analysis startup/Pause key are positioned at rectangular parallelepiped outer casing frontispiece, and attaching plug is positioned at the rectangular parallelepiped shell back side; Described rectangular parallelepiped enclosure, microcontroller connects respectively power module, scan control module, analysis and Control module, liquid crystal display control module, scanning board control module and spectrum analyzer control module.
2. integrated circuit High-Power Microwave damage effect sunykatuib analysis instrument according to claim 1, it is characterized in that, described electromagnetic property scanning board and spectrum analyzer are controlled by scanning board control module and spectrum analyzer control module respectively, for the operating voltage of electromagnetic interference (EMI) frequency, crest voltage, pulse width, pulse repetition rate and the integrated circuit of testing integrated circuits.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201320402440.0U CN203455448U (en) | 2013-07-08 | 2013-07-08 | High-power microwave damaging effect simulation analyzer for integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201320402440.0U CN203455448U (en) | 2013-07-08 | 2013-07-08 | High-power microwave damaging effect simulation analyzer for integrated circuit |
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CN203455448U true CN203455448U (en) | 2014-02-26 |
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CN201320402440.0U Expired - Fee Related CN203455448U (en) | 2013-07-08 | 2013-07-08 | High-power microwave damaging effect simulation analyzer for integrated circuit |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106959396A (en) * | 2017-04-07 | 2017-07-18 | 中国人民解放军61489部队 | A kind of method for carrying out damage effect experiment to electroacoustic alarm controller using multiband Narrow-band HPW |
CN107014834A (en) * | 2017-04-07 | 2017-08-04 | 中国人民解放军61489部队 | A kind of method for carrying out damage effect experiment to electroacoustic alarm controller using Ultra-wide spectrum HPW |
CN109298296A (en) * | 2018-11-12 | 2019-02-01 | 西安电子科技大学 | A kind of strong electromagnetic pulse injects the injury scale Equivalent Modeling and emulation mode of lower radio frequency link |
CN112130004A (en) * | 2020-09-25 | 2020-12-25 | 中国工程物理研究院应用电子学研究所 | Circuit-level high-power microwave back-door coupling real-time testing device and method |
-
2013
- 2013-07-08 CN CN201320402440.0U patent/CN203455448U/en not_active Expired - Fee Related
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106959396A (en) * | 2017-04-07 | 2017-07-18 | 中国人民解放军61489部队 | A kind of method for carrying out damage effect experiment to electroacoustic alarm controller using multiband Narrow-band HPW |
CN107014834A (en) * | 2017-04-07 | 2017-08-04 | 中国人民解放军61489部队 | A kind of method for carrying out damage effect experiment to electroacoustic alarm controller using Ultra-wide spectrum HPW |
CN107014834B (en) * | 2017-04-07 | 2019-07-16 | 中国人民解放军61489部队 | A method of damage effect test being carried out to electroacoustic alarm controller using Ultra-wide spectrum HPW |
CN109298296A (en) * | 2018-11-12 | 2019-02-01 | 西安电子科技大学 | A kind of strong electromagnetic pulse injects the injury scale Equivalent Modeling and emulation mode of lower radio frequency link |
CN109298296B (en) * | 2018-11-12 | 2020-01-24 | 西安电子科技大学 | Damage grading equivalent modeling and simulation method for radio frequency link under strong electromagnetic pulse injection |
CN112130004A (en) * | 2020-09-25 | 2020-12-25 | 中国工程物理研究院应用电子学研究所 | Circuit-level high-power microwave back-door coupling real-time testing device and method |
CN112130004B (en) * | 2020-09-25 | 2022-07-01 | 中国工程物理研究院应用电子学研究所 | Circuit-level high-power microwave back-door coupling real-time testing device and method |
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140226 Termination date: 20140708 |
|
EXPY | Termination of patent right or utility model |