CN203434879U - High voltage generator - Google Patents
High voltage generator Download PDFInfo
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- CN203434879U CN203434879U CN201320398041.1U CN201320398041U CN203434879U CN 203434879 U CN203434879 U CN 203434879U CN 201320398041 U CN201320398041 U CN 201320398041U CN 203434879 U CN203434879 U CN 203434879U
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- base resistance
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Abstract
The utility model relates to a high voltage generator. A high voltage power amplifier unit of the high voltage generator adopts a three-level amplification circuit to amplify signals, wherein a first-level amplification unit and a second-level amplification unit adopts a common collector for output, and the form of the circuit facilitates high voltage output. In addition, transistors and resistors in the second-level amplification unit and a third-level amplification unit of the high voltage power amplifier unit both adopt series connection, so that the voltage endurance capability of the circuit is enhanced.
Description
Technical field
The utility model relates to a kind of high pressure generator.
Background technology
Increasing because of the power of present discrete device, ceiling voltage has arrived KV level, and now domestic large power test is relatively backward, lacks corresponding checkout equipment, designs a kind of high pressure generator for this reason.
Summary of the invention
The technical problem that cannot complete high-power discrete device test for solving current general high voltage generator because barotolerance is poor, the utility model provides a kind of high pressure generator that can detect high-power discrete device.
Technical solution of the present utility model is as follows:
A kind of high pressure generator, comprise high pressure power amplifier unit and the high voltage source for powering to high pressure power amplifier unit, its special character is: described high pressure power amplifier unit comprises one-level transistor amplifying unit, secondary transistor amplifying unit, three grades of transistor amplifying units of cascade;
Described one-level transistor amplifying unit comprises transistor Q1, the base resistance R25 being connected with transistor Q1 base stage, the emitter resistance R22 being connected with transistor Q1 emitter, another termination input signal of described base resistance R25, the other end ground connection of described emitter resistance R22;
Described secondary transistor amplifying unit comprises transistor unit Q2, base resistance unit R 26, emitter resistance R23, collector resistance R11;
The collector electrode of described transistor unit Q2 is connected with collector resistance R11; The base stage of described transistor unit Q2 is connected with the collector electrode of the transistor Q1 of one-level transistor amplifying unit; The emitter of described transistor unit Q2 links with emitter resistance R23, the other end ground connection of described emitter resistance R23;
One termination power of described base resistance unit R 26, the other end of described base resistance unit R 26 is connected with the collector electrode of transistor Q1;
Described transistor unit Q2 comprises a plurality of transistor Q21, and wherein, the emitter of a upper transistor Q21 is connected with the collector electrode of next transistor Q21, and described base resistance unit R 26 comprises a plurality of base resistance R21 one to one with transistor Q21; One end of described base resistance R21 is connected with the base stage of corresponding transistor Q21, and its other end is connected with a upper transistorized base stage;
Described three grades of transistor level amplifying units comprise transistor unit Q3, base resistance unit R 27;
The signal input part of described transistor unit Q3 is connected with the output of resistance R 11, and the output of described transistor unit Q3 is by load RL ground connection;
One termination power of described base resistance unit R 27; The output of another termination collector resistance R11 of described base resistance unit R 27;
Described transistor unit Q3 comprises a plurality of transistor Q31; Wherein, the emitter of a upper transistor Q31 is connected with the collector electrode of next transistor Q31, and described base resistance unit R 27 comprises a plurality of base resistance R31 one to one with transistor Q31; One end of described base resistance R31 is connected with the base stage of corresponding transistor Q31, and its other end is connected with a upper transistorized base stage.
The beneficial effects of the utility model:
1, high pressure power amplifier unit of the present utility model adopts three-stage amplifier to carry out signal amplification, and wherein one-level amplifying unit and secondary amplifying unit adopt common collector output, and this circuit form is convenient to High voltage output.In addition, the secondary of high pressure power amplifier unit amplifies the form that transistor in electric unit and three grades of amplifying units and resistance all adopt series connection, has increased the voltage endurance capability of circuit.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of high voltage source of the present utility model;
Fig. 2 is the circuit theory diagrams of high pressure power amplifier of the present utility model;
Fig. 3 is the physical circuit figure of high pressure power amplifier of the present utility model.
Embodiment
Fig. 1 is a high-voltage switch power supply, gives the power supply of high pressure power amplifier.D1 is a rectifier, converts interchange to direct current half-wave, then R1 and C7 are filtered into 308V direct current and are added on T1 switch transformer.
U1 sends PWM ripple, carrys out the conducting of control switch pipe T2, thereby control T1 input electrode current, changes, and at this moment T1 output stage produces voltage signal, through C1, C2, C5, C6, D2, D3, D4, produces high pressure HV after D5 voltage-multiplying circuit, then feeds back to U1 to reach stable high pressure through R5 and R6 dividing potential drop.
Fig. 2 be one with degenerative anodal power amplifier.Its one-level transistor amplifying unit and secondary transistor amplifying unit are common collector output, and three grades of transistor amplifying units are common emitter output, output voltage U o=-UiR41/R40.But in this figure as to export high pressure necessarily require that Q3 is withstand voltage must very high (several kilovolts), and this to be single tube do not reach.
In order to obtain High voltage output, quote actual Fig. 3 circuit diagram, Q3 is composed in series by n amplifier tube Q31, passes through like this dividing potential drop, the actual voltage that is added in each amplifier tube only has 1/n(HV), n amplifier tube can enter amplification region simultaneously, thereby reach to raise, presses object.And as the Q21 of control end, can not bear high pressure, so when Q21 conducting by R23, R11 dividing potential drop, controls each amplifier tube conducting of Q31 with the centre tap of R31.Q1 amplifies for the first time, is for controlling the signal of the input of Q21.
Claims (1)
1. a high pressure generator, comprise high pressure power amplifier unit and for the high voltage source to the power supply of high pressure power amplifier unit, it is characterized in that: described high pressure power amplifier unit comprises one-level transistor amplifying unit, secondary transistor amplifying unit, three grades of transistor amplifying units of cascade;
Described one-level transistor amplifying unit comprises transistor Q1, the base resistance R25 being connected with transistor Q1 base stage, the emitter resistance R22 being connected with transistor Q1 emitter, another termination input signal of described base resistance R25, the other end ground connection of described emitter resistance R22;
Described secondary transistor amplifying unit comprises transistor unit Q2, base resistance unit R 26, emitter resistance R23, collector resistance R11;
The collector electrode of described transistor unit Q2 is connected with collector resistance R11; The base stage of described transistor unit Q2 is connected with the collector electrode of the transistor Q1 of one-level transistor amplifying unit; The emitter of described transistor unit Q2 is connected with emitter resistance R23, the other end ground connection of described emitter resistance R23;
One termination power of described base resistance unit R 26, the other end of described base resistance unit R 26 is connected with the collector electrode of transistor Q1;
Described transistor unit Q2 comprises a plurality of transistor Q21, and wherein, the emitter of a upper transistor Q21 is connected with the collector electrode of next transistor Q21, and described base resistance unit R 26 comprises a plurality of base resistance R21 one to one with transistor Q21; One end of described base resistance R21 is connected with the base stage of corresponding transistor Q21, and its other end is connected with a upper transistorized base stage;
Described three grades of transistor amplifying units comprise transistor unit Q3, base resistance unit R 27;
The signal input part of described transistor unit Q3 is connected with the output of resistance R 11, and the output of described transistor unit Q3 is by load RL ground connection;
One termination power of described base resistance unit R 27; The output of another termination collector resistance R11 of described base resistance unit R 27;
Described transistor unit Q3 comprises a plurality of transistor Q31; Wherein, the emitter of a upper transistor Q31 is connected with the collector electrode of next transistor Q31, and described base resistance unit R 27 comprises a plurality of base resistance R31 one to one with transistor Q31; One end of described base resistance R31 is connected with the base stage of corresponding transistor Q31, and its other end is connected with a upper transistorized base stage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320398041.1U CN203434879U (en) | 2013-07-05 | 2013-07-05 | High voltage generator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320398041.1U CN203434879U (en) | 2013-07-05 | 2013-07-05 | High voltage generator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203434879U true CN203434879U (en) | 2014-02-12 |
Family
ID=50063893
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320398041.1U Expired - Lifetime CN203434879U (en) | 2013-07-05 | 2013-07-05 | High voltage generator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203434879U (en) |
-
2013
- 2013-07-05 CN CN201320398041.1U patent/CN203434879U/en not_active Expired - Lifetime
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140212 |
|
| CX01 | Expiry of patent term |