CN203415593U - Sodium post-doped flexible solar cell made on rigid composite substrate - Google Patents
Sodium post-doped flexible solar cell made on rigid composite substrate Download PDFInfo
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- CN203415593U CN203415593U CN201320544968.1U CN201320544968U CN203415593U CN 203415593 U CN203415593 U CN 203415593U CN 201320544968 U CN201320544968 U CN 201320544968U CN 203415593 U CN203415593 U CN 203415593U
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Abstract
The utility model relates to a sodium post-doped flexible solar cell made on a rigid composite substrate. The solar cell comprises a back contact layer, an absorption layer, a buffer layer, a transparent window layer and a top electrode which are arranged from bottom to top on a flexible substrate, and is characterized in that a sodium fluoride preset layer is made between the absorption layer and the buffer layer; and the flexible substrate is a polyimide film which is separated from the rigid substrate after the flexible solar cell is formed. Based on the characteristic that glass used as the rigid substrate is resistant to high temperature and by the adhesive force between the flexible substrate and glass, the flexible substrate will not deform at high temperature, and the grown flexible solar cell is not loose and will not fall off. In addition, due to the sodium fluoride preset layer made between the selenium-grown absorption layer and the buffer layer, the generated flexible solar cell has advantages of good crystallization quality, large crystal grain and few defect, electrical properties of the film of the absorption layer are improved, and conversion efficiency of the flexible solar cell is raised effectively. With the polyimide film coated on the surface of the glass, roughness of the substrate can be improved well.
Description
Technical field
The utility model belongs to solar cell manufacture technology field, particularly relate on a kind of rigid composite substrate, make after mix sodium flexible solar cell.
Background technology
Copper Indium Gallium Selenide material (CIGS) belongs to I-III-VI family quaternary compound semiconductor, has the crystal structure of chalcopyrite.CIGS thin-film too can battery since 20 century 70s occur, obtain very fast development, and will progressively realize industrialization.This battery has following characteristics: 1. the energy gap of Copper Indium Gallium Selenide can be adjusted within the scope of 1.04ev-1.67ev.2. Copper Indium Gallium Selenide is a kind of direct gap semiconductor, to the absorption coefficient of visible ray up to 105cm-1.CuInGaSe absorbed layer thickness only needs 1.5～2.5 μ m, and the thickness of whole battery is 3～4 μ m.3. Radiation hardness is strong, is relatively suitable as space power system.4. conversion efficiency is high.The small size CIGS thin-film solar cell conversion efficiency of German solar energy in 2010 and Hydrogen Energy research center (ZSW) development is up to 20.3%.5. low light level characteristic is good.Therefore Copper Indium Gallium Selenide polycrystalline thin-film solar cell is expected to one of main product becoming by solar cell of future generation.
Along with scientific and technical development, increasing field needs solar cell to have higher quality than power, can in adverse circumstances, normally use again, and this has just promoted the development of flexible solar cell technology.For realizing, both had higher quality than power, and had again flexibility, foldability and be not afraid of and fall the CIGS thin-film solar cell touching, polyimides (PI) is shown one's talent for the CIGS thin-film solar cell of substrate.Yet because the thermal coefficient of expansion of polyimides cannot itself have good coupling with Copper Indium Gallium Selenide material, and when temperature is higher, as the polyimides of substrate, can produce larger deformation, cause CIGS thin-film comparatively loose, easily come off, and temperature is when lower, the CIGS thin-film crystalline quality growing is poor, and crystal grain is tiny, defect is more, increase the compound of charge carrier, shortened the life-span of few son, and then affected battery performance.
Utility model content
When the utility model provides a kind of high temperature for solving the technical problem existing in known technology, substrate is indeformable, the CIGS thin-film growing does not come off, and CIGS thin-film crystalline quality is good, crystal grain is large, defect is few, after making, mixes sodium flexible solar cell on the good rigid composite substrate of electrology characteristic.
The utility model comprises following technical scheme:
After making on rigid composite substrate, mix sodium flexible solar cell, comprise back contact, absorbed layer, resilient coating, transparent window layer and top electrode from bottom to top in flexible substrate, be characterized in: between described absorbed layer and resilient coating, be shaped with one deck sodium fluoride initialization layer; Described flexible substrate is for forming the polyimide film of separating from rigid substrate after flexible solar cell.
The utility model can also adopt following technical measures:
Described absorbed layer is CuInGaSe absorbed layer; Described resilient coating is cadmium sulfide resilient coating; Described rigid substrate is soda glass; Described flexible substrate is polyimide film.
Described back contact consists of resistive formation Mo film and low resistivity layer Mo film.
Described transparent window layer consists of high resistant native oxide zinc film and low-resistance zinc oxide aluminum film.
Described very evaporation two the thick Al film tapes of 0.8-1.5 μ m that are parallel to each other on transparent window layer low-resistance zinc oxide aluminum film that power on.
The advantage the utlity model has and good effect:
1, the utility model has utilized the high temperature resistant feature of glass as rigid substrate, adhesive force between flexible substrate dependence and glass, during high temperature, flexible substrate is indeformable, the flexible solar cell growing does not loosen, does not come off, and is shaped with one deck sodium fluoride initialization layer between growth selenium absorbed layer and resilient coating in addition, and the flexible solar cell of generation not only crystalline quality is good, crystal grain is large, defect is few, and has improved the electrology characteristic of absorbed layer film, has effectively improved flexible solar cell conversion efficiency.
2, the utility model is applied to glass surface by polyimides glue, can better improve the roughness of substrate; Have preparation technology simple, easy to implement, the product of preparing can be adapted to various environment, has application prospect extremely widely.
Accompanying drawing explanation
After making on Fig. 1 the utility model rigid composite substrate, mix sodium flexible solar cell structural representation;
Fig. 2 is that in Fig. 1 battery, flexible substrate sinks to the bottom separated front battery structure schematic diagram with rigidity.
In figure, 1-soda glass, 2-polyimide film, 3-back contact, 4-absorbed layer, 5-sodium fluoride initialization layer, 6-resilient coating, 7-transparent window layer, 8-top electrode.
Embodiment
For further disclosing utility model content of the present utility model, Characteristic, especially exemplified by following instance, be also elaborated by reference to the accompanying drawings as follows:
After making on rigid composite substrate, mix sodium flexible solar cell, comprise back contact 3, absorbed layer 4, resilient coating 6, transparent window layer 7 and top electrode 8 from bottom to top in flexible substrate.
Innovative point of the present utility model comprises:
Between described absorbed layer and resilient coating, be shaped with one deck sodium fluoride initialization layer 5; Described flexible substrate is for forming the polyimide film 2 of separating from rigid substrate after flexible solar cell.
Innovative point of the present utility model also comprises:
Described absorbed layer is CuInGaSe absorbed layer; Described resilient coating is cadmium sulfide resilient coating; Described rigid substrate is soda glass; Described flexible substrate is polyimide film; Described back contact consists of resistive formation Mo film and low resistivity layer Mo film; Described transparent window layer consists of high resistant native oxide zinc film and low-resistance zinc oxide aluminum film; Described very evaporation two the thick Al film tapes of 0.8-1.5 μ m that are parallel to each other on transparent window layer low-resistance zinc oxide aluminum film that power on.
After making on rigid composite substrate, mix sodium flexible solar cell process:
Embodiment 1:
1, prepare polyimide film-soda glass rigid composite substrate
(1) clean soda glass: the soda glass that is 1.5-2mm by 10cm * 10cm, thickness is put into potassium bichromate solution and soaked 2h, by soda glass taking-up deionized water rinsing; By rinsing clean soda glass, to be placed in concentration be 99.5% acetone soln, puts into supersonic wave cleaning machine, and ultrasonic frequency is 20-30kHz, cleans 20-25min; Soda glass is taken out from acetone soln, and with after deionized water rinsing, then soda glass is placed in to concentration is 99.7% alcohol, puts into supersonic wave cleaning machine, and ultrasonic frequency is 20-30kHz, cleans 20-25min; Finally soda glass is taken out from alcohol, put into the beaker that fills deionized water, in supersonic wave cleaning machine, ultrasonic frequency is 20-30kHz, and every 20-25min cleans one time, cleans altogether three times;
(2) prepare polyimides prefabricated membrane: cleaning soda glass later, with nitrogen, dry up, be placed on the rotating disk of sol evenning machine, polyimides glue is coated on to soda glass surface, and with the at the uniform velocity even glue 35-45s of rotating speed of 1300-1500r/min, soda glass surface forms polyimides prefabricated membrane;
(3) cure polyimide prefabricated membrane: will there is the soda glass of polyimides prefabricated membrane to put into baking oven, 10-20min, oven temperature rises to 125-135 ℃ from 25 ℃; 125-135 ℃ maintains 20-30min; 5-10min, oven temperature rises to 150-160 ℃ from 125-135 ℃; 150-160 ℃ maintains 10-15min; 5-10min, oven temperature is warming up to 200-210 ℃ from 150-160 ℃; 200-210 ℃ maintains 15-20min; 5-10min, oven temperature rises to 250-260 ℃ from 200-210 ℃; 250-260 ℃ maintains 15-20min; 5-10min, rises to 340-350 ℃ by oven temperature from 250-260 ℃; 340-350 ℃ maintains 10-15min, then be naturally down to 25 ℃, polyimides prefabricated membrane is solidificated in soda glass, forms the polyimide film of one deck 25-30 μ m above soda glass, completes the manufacturing process of the rigid composite substrate of polyimide film-soda glass formation.
2, on rigid composite substrate, make flexible solar cell
(1) make back contact: in the settling chamber of Deposited By Dc Magnetron Sputtering system, the Mo that purity is 99.99% is that target is deposited on the polyimide film of rigid composite substrate; Manufacturing process is: in settling chamber, vacuum degree is 3.0 * 10
-4pa, operating air pressure 1-2Pa, rigid composite underlayer temperature 25-50 ℃, radio-frequency power 500-700W, Ar throughput 30-50sccm, target is back and forth walked 2-4 time above the polyimide film of rigid composite substrate with the speed of 4-6mm/s, deposits the resistive formation Mo film that one deck 80-120nm is thick on polyimide film; Again operating air pressure is modulated to 0-0.5Pa, rigid composite underlayer temperature keeps 25-50 ℃, radio-frequency power 1500-2000W, Ar throughput 15-50sccm, target is still back and forth walked 4-6 time at resistive formation Mo film surface with 4-6mm/s speed, resistive formation Mo film surface forms the thick low resistivity layer Mo film of 600-700nm, and resistive formation Mo film and low resistivity layer Mo film have formed Mo back contact;
(2) make CuInGaSe absorbed layer: the rigid composite substrate that is shaped with Mo back contact is placed in the selenizing stove of film preparing system, adopt coevaporation three-step approach on back contact, to make CuInGaSe absorbed layer; Manufacturing process comprises: 1. selenizing stove vacuum degree is 3.0 * 10
-4pa, rigid composite underlayer temperature is 350-400 ℃, coevaporation In, Ga, Se on back contact, wherein In evaporation source temperature is 850-900 ℃, Ga evaporation source temperature is 880-920 ℃, and Se evaporation source temperature is 240-280 ℃, and evaporation time is 15-20min, control atomic ratio In:Ga=0.7:0.3, (In+Ga)/Se=2:3; 2. rigid composite substrate is warming up to 550-580 ℃, coevaporation Cu, Se, and wherein Cu evaporation source temperature is 1120-1160 ℃, and Se evaporation source temperature is 240-280 ℃, and evaporation time is 15-20min; 3. rigid composite underlayer temperature keeps 550-580 ℃, coevaporation In, Ga, Se, wherein In evaporation source temperature is 850-900 ℃, Ga evaporation source temperature is 880-920 ℃, Se evaporation source temperature is 240-280 ℃, the evaporation time of In and Ga is 2-4min, when substrate is cooled to 350-400 ℃, closes Se evaporation source, substrate is cooled to 25 ℃ again, control Cu/ (In+Ga) ratio at 0.88-0.92, on back contact, form the p-CIGS film that 1.5-2 μ m is thick, be CuInGaSe absorbed layer; The chemical molecular formula of p-CIGS film is CuIn
1-xga
xse
2, in formula, x is 0.25-0.35, the Copper Indium Gallium Selenide yellow copper structure of the poor a little Cu that conduction type is p-type;
(3) make sodium fluoride initialization layer: the rigid composite substrate that is shaped with CuInGaSe absorbed layer is placed in the selenizing stove of film preparing system, adopt coevaporation method on CuInGaSe absorbed layer, to make sodium fluoride initialization layer; Manufacturing process comprises: selenizing stove vacuum degree is 8.0 * 10
-4pa, rigid composite underlayer temperature is 200-300 ℃, when the temperature of NaF evaporation source reaches 800-850 ℃, evaporation 1-2min; Rigid composite underlayer temperature reaches 400-450 ℃, under Se atmosphere, anneals, and wherein the temperature of Se evaporation source is 240-280 ℃, and annealing time is 20-30min; On CuInGaSe absorbed layer, forming chemical molecular formula is the sodium fluoride initialization layer that NaF, thickness are 20-30nm;
(4) make cadmium sulfide resilient coating: adopt chemical bath method on sodium fluoride initialization layer, to make cadmium sulfide resilient coating, manufacturing process comprises: the thiocarbamide SC (NH that 1. configuration concentration is 0.01mol/L
2)
2solution; Cadmium acetate (CH
3cOO)
2cd and Ammonium Acetate CH
3cOONH
4mixed solution, wherein cadmium acetate solution concentration is 0.001mol/L, Ammonium Acetate solubility is 0.003mol/L; Concentration is 1.3 * 10
-3the ammoniacal liquor NH of mol/L
3h
2o solubility; 2. 25mL thiourea solution, 25mL cadmium acetate and Ammonium Acetate mixed solution, 4 ammonia spirits are stirred in beaker; 3. the rigid composite substrate that is shaped with sodium fluoride initialization layer is put into beaker, and beaker is put into water-bath; Bath temperature is set to 78-80 ℃, reaction 50-60min; 4. take out substrate, with deionized water, rinse well, it is CdS that sodium fluoride initialization layer surface forms one deck chemical molecular formula, and conduction type is N-shaped, and the n-CdS layer that thickness is 45-50nm is as cadmium sulfide resilient coating;
(5) make transparent window layer: the rigid composite substrate that is shaped with cadmium sulfide resilient coating is placed in the settling chamber of rf magnetron sputtering preparation system, and the i-ZnO that the purity of take is 99.99% is target, vacuum degree modulation 3.0 * 10 in settling chamber
-4pa, rigid composite underlayer temperature is 25-50 ℃, and radio-frequency power is 800-1000W, and Ar throughput is 10-20sccm, O
2throughput is 2-6sccm, and target speed with 2-6mm/s on cadmium sulfide resilient coating is walked 6-10 time, the thick i-ZnO high resistant native oxide zinc film of cadmium sulfide buffer-layer surface deposition one deck 50-100nm; The rigid composite substrate that is shaped with high resistant native oxide zinc film is placed in the settling chamber of magnetically controlled DC sputtering preparation system, and the ZnO:Al that the purity of take is 99.99% is target, and in settling chamber, vacuum degree is adjusted to 3.0 * 10
-4pa, rigid composite underlayer temperature is 25 ℃, direct current power is 1000-1200W, Ar throughput is 12-18sccm, target is with 2-6mm/s speed walking 10-15 time on high resistant native oxide zinc film, and high resistant native oxide zinc film surface deposits the thick n-ZnO:Al low-resistance zinc oxide aluminum film of one deck 0.4-0.6 μ m; High resistant native oxide zinc film and low-resistance zinc oxide aluminum film have formed the transparent window layer of N-shaped conduction type;
(6) make top electrode:
Be shaped with the vaporization chamber that transparent window layer on the rigid composite substrate of transparent window layer is placed in coevaporation preparation system down, molybdenum (Mo) heater strip that hangs with aluminum strip be positioned at transparent window layer under, vacuum degree modulation 3.0 * 10 in vaporization chamber
-4pa, heater strip leads to respectively the lasting 1-2min of 20A electric current, leads to the lasting 1-2min of 50A electric current, leads to the lasting 1-2min of 80A electric current, leads to the lasting 5-8min of 120A electric current, stop heating, heater strip naturally cools to room temperature, transparent window layer surface form two be parallel to each other, Al film that 0.8-1.5 μ m is thick is as top electrode, form before separated rigid substrate as shown in Figure 2 after mix sodium flexible CIGS thin-film solar cell;
(7) separated rigid composite substrate:
The rigid composite substrate that is shaped with flexible CIGS thin-film solar cell is put into vacuum drying oven, be heated to 80-90 ℃, continue after 2-3min, rigid composite substrate is taken out after the liquid nitrogen that is dipped into subzero 100 ℃, in room temperature environment, naturally return back to room temperature, polyimide film comes off from soda glass automatically, completes the process of mixing sodium flexible solar cell after preparation on the substrate of rigid composite shown in Fig. 1.
Embodiment 2:
1, prepare polyimide film-soda glass rigid composite substrate
(1) clean soda glass: the soda glass that is 1.5-2mm by 10cm * 10cm, thickness is put into potassium bichromate solution and soaked 2h, by soda glass taking-up deionized water rinsing; By rinsing clean soda glass, to be placed in concentration be 99.5% acetone soln, puts into supersonic wave cleaning machine, and ultrasonic frequency is 20-30kHz, cleans 20-25min; Soda glass is taken out from acetone soln, and with after deionized water rinsing, then soda glass is placed in to concentration is 99.7% alcohol, puts into supersonic wave cleaning machine, and ultrasonic frequency is 20-30kHz, cleans 20-25min; Finally soda glass is taken out from alcohol, put into the beaker that fills deionized water, in supersonic wave cleaning machine, ultrasonic frequency is 20-30kHz, and every 20-25min cleans one time, cleans altogether three times;
(2) prepare polyimides prefabricated membrane: cleaning soda glass later, with nitrogen, dry up, be placed on the rotating disk of sol evenning machine, polyimides glue is coated on to soda glass surface, and with the at the uniform velocity even glue 35-45s of rotating speed of 1300-1500r/min, soda glass surface forms polyimides prefabricated membrane;
(3) cure polyimide prefabricated membrane: will there is the soda glass of polyimides prefabricated membrane to put into baking oven, 10-20min, oven temperature rises to 125-135 ℃ from 25 ℃; 125-135 ℃ maintains 20-30min; 5-10min, oven temperature rises to 150-160 ℃ from 125-135 ℃; 150-160 ℃ maintains 10-15min; 5-10min, oven temperature is warming up to 200-210 ℃ from 150-160 ℃; 200-210 ℃ maintains 15-20min; 5-10min, oven temperature rises to 250-260 ℃ from 200-210 ℃; 250-260 ℃ maintains 15-20min; 5-10min, rises to 340-350 ℃ by oven temperature from 250-260 ℃; 340-350 ℃ maintains 10-15min, then be naturally down to 25 ℃, polyimides prefabricated membrane is solidificated in soda glass, forms the polyimide film of one deck 25-30 μ m above soda glass, completes the manufacturing process of the rigid composite substrate of polyimide film-soda glass formation.
2, on rigid composite substrate, make CIGS thin-film solar cell:
(1) make back contact: in the settling chamber of Deposited By Dc Magnetron Sputtering system, the Mo that purity is 99.99% is that target is deposited on the polyimide film of rigid composite substrate; Manufacturing process is: in settling chamber, vacuum degree is 3.0 * 10
-4pa, operating air pressure 1-2Pa, rigid composite underlayer temperature 25-50 ℃, radio-frequency power 500-700W, Ar throughput 30-50sccm, target is back and forth walked 2-4 time above the polyimide film of rigid composite substrate with the speed of 4-6mm/s, deposits the resistive formation Mo film that one deck 80-120nm is thick on polyimide film; Again operating air pressure is modulated to 0-0.5Pa, rigid composite underlayer temperature keeps 25-50 ℃, radio-frequency power 1500-2000W, Ar throughput 15-50sccm, target is still back and forth walked 4-6 time at resistive formation Mo film surface with 4-6mm/s speed, resistive formation Mo film surface forms the thick low resistivity layer Mo film of 600-700nm, and resistive formation Mo film and low resistivity layer Mo film have formed Mo back contact;
(2) make CuInGaSe absorbed layer: the rigid composite substrate that is shaped with back contact is placed in the selenizing stove of film preparing system, adopt coevaporation one-step method on back contact, to prepare CuInGaSe absorbed layer; Manufacturing process comprises: the rigid composite substrate that is shaped with back contact is placed in the selenizing stove of film preparing system; By selenizing stove evacuation, when rigid composite underlayer temperature is 550-580 ℃, coevaporation Cu, In, Ga, Se, wherein Cu evaporation source temperature is 1120-1160 ℃, In evaporation source temperature is 850-900 ℃, Ga evaporation source temperature is 880-920 ℃, and Se evaporation source temperature is 240-280 ℃, and evaporation time is 25-30min; Close evaporation source, when rigid composite substrate is cooled to 25 ℃, on back contact, form p-CIGS film that 1.5-2 μ m is thick as CuInGaSe absorbed layer; The chemical molecular formula of p-CIGS film is CuIn
1-xga
xse
2, in formula, x is 0.25-0.35;
(3) make sodium fluoride initialization layer: the rigid composite substrate that is shaped with CuInGaSe absorbed layer is placed in the selenizing stove of film preparing system, adopt coevaporation method on CuInGaSe absorbed layer, to make sodium fluoride initialization layer; Manufacturing process comprises: selenizing stove vacuum degree is 8.0 * 10
-4pa, rigid composite underlayer temperature is 200-300 ℃, when the temperature of NaF evaporation source reaches 800-850 ℃, evaporation 1-2min; Rigid composite underlayer temperature reaches 400-450 ℃, under Se atmosphere, anneals, and wherein the temperature of Se evaporation source is 240-280 ℃, and annealing time is 20-30min; On CuInGaSe absorbed layer, forming chemical molecular formula is the sodium fluoride initialization layer that NaF, thickness are 20-30nm;
(4) make cadmium sulfide resilient coating: adopt chemical bath method on sodium fluoride initialization layer, to make cadmium sulfide resilient coating, manufacturing process comprises: the thiocarbamide SC (NH that 1. configuration concentration is 0.01mol/L
2)
2solution; Cadmium acetate (CH
3cOO)
2cd and Ammonium Acetate CH
3cOONH
4mixed solution, wherein cadmium acetate solution concentration is 0.001mol/L, Ammonium Acetate solubility is 0.003mol/L; Concentration is 1.3 * 10
-3the ammoniacal liquor NH of mol/L
3h
2o solubility; 2. 25mL thiourea solution, 25mL cadmium acetate and Ammonium Acetate mixed solution, 4 ammonia spirits are stirred in beaker; 3. the rigid composite substrate that is shaped with sodium fluoride initialization layer is put into beaker, and beaker is put into water-bath; Bath temperature is set to 78-80 ℃, reaction 50-60min; 4. take out substrate, with deionized water, rinse well, it is CdS that sodium fluoride initialization layer surface forms one deck chemical molecular formula, and conduction type is N-shaped, and the n-CdS layer that thickness is 45-50nm is as cadmium sulfide resilient coating;
(5) make transparent window layer: the rigid composite substrate that is shaped with cadmium sulfide resilient coating is placed in the settling chamber of rf magnetron sputtering preparation system, and the i-ZnO that the purity of take is 99.99% is target, vacuum degree modulation 3.0 * 10 in settling chamber
-4pa, rigid composite underlayer temperature is 25-50 ℃, and radio-frequency power is 800-1000W, and Ar throughput is 10-20sccm, O
2throughput is 2-6sccm, and target speed with 2-6mm/s on cadmium sulfide resilient coating is walked 6-10 time, the thick i-ZnO high resistant native oxide zinc film of cadmium sulfide buffer-layer surface deposition one deck 50-100nm; The rigid composite substrate that is shaped with high resistant native oxide zinc film is placed in the settling chamber of magnetically controlled DC sputtering preparation system, and the ZnO:Al that the purity of take is 99.99% is target, and in settling chamber, vacuum degree is adjusted to 3.0 * 10
-4pa, rigid composite underlayer temperature is 25 ℃, direct current power is 1000-1200W, Ar throughput is 12-18sccm, target is with 2-6mm/s speed walking 10-15 time on high resistant native oxide zinc film, and high resistant native oxide zinc film surface deposits the thick n-ZnO:Al low-resistance zinc oxide aluminum film of one deck 0.4-0.6 μ m; High resistant native oxide zinc film and low-resistance zinc oxide aluminum film have formed the transparent window layer of N-shaped conduction type;
(6) make top electrode: be shaped with the vaporization chamber that transparent window layer on the rigid composite substrate of transparent window layer is placed in coevaporation preparation system down, molybdenum (Mo) heater strip that hangs with aluminum strip be positioned at transparent window layer under, vacuum degree modulation 3.0 * 10 in vaporization chamber
-4pa, heater strip leads to respectively the lasting 1-2min of 20A electric current, leads to the lasting 1-2min of 50A electric current, leads to the lasting 1-2min of 80A electric current, leads to the lasting 5-8min of 120A electric current, stop heating, heater strip naturally cools to room temperature, transparent window layer surface form two be parallel to each other, Al film that 0.8-1.5 μ m is thick is as top electrode, form before separated rigid substrate as shown in Figure 2 after mix sodium flexible CIGS thin-film solar cell;
(7) separated rigid composite substrate: the rigid composite substrate that is shaped with flexible CIGS thin-film solar cell is put into vacuum drying oven, be heated to 80-90 ℃, continue after 2-3min, rigid composite substrate is taken out after the liquid nitrogen that is dipped into subzero 100 ℃, in room temperature environment, naturally return back to room temperature, polyimide film comes off from soda glass automatically, completes the process of mixing sodium flexible solar cell after rigid composite substrate preparation as shown in Figure 1.
Although by reference to the accompanying drawings preferred embodiment of the present utility model is described above; but the utility model is not limited to above-mentioned embodiment; above-mentioned embodiment is only schematic; be not restrictive; those of ordinary skill in the art is under enlightenment of the present utility model; not departing from the scope situation that the utility model aim and claim protect, can also make a lot of forms.Within these all belong to protection range of the present utility model.
Claims (5)
1. after making on rigid composite substrate, mix sodium flexible solar cell, comprise back contact, absorbed layer, resilient coating, transparent window layer and top electrode from bottom to top in flexible substrate, it is characterized in that: between described absorbed layer and resilient coating, be shaped with one deck sodium fluoride initialization layer; Described flexible substrate is for forming the polyimide film of separating from rigid substrate after flexible solar cell.
2. after making on rigid composite substrate according to claim 1, mix sodium flexible solar cell, it is characterized in that: described absorbed layer is CuInGaSe absorbed layer; Described resilient coating is cadmium sulfide resilient coating; Described rigid substrate is soda glass; Described flexible substrate is polyimide film.
3. after making on rigid composite substrate according to claim 1, mix sodium flexible solar cell, it is characterized in that: described back contact consists of resistive formation Mo film and low resistivity layer Mo film.
4. after making on rigid composite substrate according to claim 1, mix sodium flexible solar cell, it is characterized in that: described transparent window layer consists of high resistant native oxide zinc film and low-resistance zinc oxide aluminum film.
5. after making on rigid composite substrate according to claim 1, mix sodium flexible solar cell, it is characterized in that: described in very evaporation two the thick Al film tapes of 0.8-1.5 μ m that are parallel to each other on transparent window layer low-resistance zinc oxide aluminum film that power on.
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| CN201320544968.1U CN203415593U (en) | 2013-09-03 | 2013-09-03 | Sodium post-doped flexible solar cell made on rigid composite substrate |
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|---|---|---|---|
| CN201320544968.1U CN203415593U (en) | 2013-09-03 | 2013-09-03 | Sodium post-doped flexible solar cell made on rigid composite substrate |
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