CN203415590U - Heterojunction solar cell - Google Patents
Heterojunction solar cell Download PDFInfo
- Publication number
- CN203415590U CN203415590U CN201320442000.8U CN201320442000U CN203415590U CN 203415590 U CN203415590 U CN 203415590U CN 201320442000 U CN201320442000 U CN 201320442000U CN 203415590 U CN203415590 U CN 203415590U
- Authority
- CN
- China
- Prior art keywords
- layer
- heterojunction solar
- solar battery
- solar cell
- silicon oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a heterojunction solar cell. The heterojunction solar cell includes a P layer, intrinsic layers, a N type silicon substrate, Pyramid fabric surfaces, a N+ layer and a silicon oxide layer; and a front-surface electrode extends to the P layer from a back surface in a penetrating manner; the P layer, one intrinsic layer, one Pyramid fabric surface, the N type silicon substrate, the other Pyramid fabric surface, the other intrinsic layer, the N+ layer and the silicon oxide layer are stacked sequentially; and a back-surface electrode penetrates the silicon oxide layer and is connected with the N+ layer and a back-surface metal grid wire. With the heterojunction solar cell of the utility model adopted, a silver paste shadowed area can be decreased, and therefore, the efficiency of the heterojunction solar cell can be improved.
Description
Technical field
The utility model relates to a kind of solar cell, particularly a kind of heterojunction solar battery.
Background technology
At present, severe problem of Chinese crystal silicon solar batteries industry faces: efficiency is low, the conversion efficiency of heterojunction solar battery is to weigh an important indicator of crystal silicon solar batteries quality, and shielded area is the key factor that affects efficiency.How in the controlled range of cost, efficiency to be improved up, be the problem that everybody unanimously pays close attention to very much.How reducing silver slurry is everybody urgent problem to blocking of cell piece, have a lot of product lines, laboratory to propose secondary printing, but technology is immature.So reduce silver slurry, it to the shielded area of heterojunction solar battery, is a problem being badly in need of solution.
Summary of the invention
Goal of the invention: it is too much that the purpose of this utility model is to solve prior art crystal silicon solar batteries silver slurry consumption, and the problem of blocking solar cell light-receiving area.
Technical scheme: the utility model provides following technical scheme: a kind of heterojunction solar battery, comprises P layer, intrinsic layer, N-type silicon substrate, pyramid matte, N+ layer and silicon oxide layer, front electrode extends through P layer from the back side, backplate runs through silicon oxide layer, connects N+ layer and back side main grid line.
As optimization, described heterojunction solar battery is successively according to P layer, intrinsic layer, pyramid matte, N-type silicon substrate, pyramid matte, intrinsic layer, N+ layer and silicon oxide layer stack.
As optimization, described heterojunction solar battery front and back also arranges respectively nesa coating.
As optimization, described electrically conducting transparent film thickness is 100nm.
As optimization, the average height of described pyramid matte is between 4~6um.
As optimization, described front main grid line and back side main grid linear diameter are 0.5mm, and positive thin grid line and the thin grid line diameter in the back side are 0.1mm.
Beneficial effect: the utility model compared with prior art: use hetero-junction solar cell of the present utility model, reduce silver slurry shielded area, improve heterojunction solar battery efficiency, reduced silver-colored slurry consumption, reduced cost.
Accompanying drawing explanation
Fig. 1 is cross section structure schematic diagram of the present utility model;
Fig. 2 is positive planar structure schematic diagram of the present utility model;
Fig. 3 is back side plane structural representation of the present utility model.
Embodiment
As shown in Figures 1 and 2, comprise P layer 1, intrinsic layer 2, N-type silicon substrate 3, pyramid matte 4, N+ layer 5 and silicon oxide layer 6, described aspect is successively according to P layer 1, intrinsic layer 2, pyramid matte 4, N-type silicon substrate 3, pyramid matte 4, intrinsic layer 2, N+ layer 5 and silicon oxide layer 6 stacks, front electrode 7 extends through P layer 1 from the back side, backplate 8 runs through silicon oxide layer 6, connects N+ layer 5 and back side main grid line 9.
Described nesa coating 10 thickness are 100nm.Form the average height of pyramid matte 4 between 4~6um.Making herbs into wool chemical solvent used is NaOH, TCS and deionized water, and its volume ratio is: NaOH: TCS: deionized water=2 ~ 10:10 ~ 20:120 ~ 200.Described front main grid line 11 and back side main grid line 9 diameters are 0.5mm, and positive thin grid line 13 and thin grid line 12 diameters in the back side are 0.1mm.
Use hetero-junction solar cell of the present utility model, reduce silver slurry shielded area, improve heterojunction solar battery efficiency, reduced silver-colored slurry consumption, reduced cost.
Claims (6)
1. a heterojunction solar battery, it is characterized in that: comprise P layer (1), intrinsic layer (2), N-type silicon substrate (3), pyramid matte (4), N+ layer (5) and silicon oxide layer (6), front electrode (7) extends through P layer (1) from the back side, backplate (8) runs through silicon oxide layer (6), connects N+ layer (5) and back side main grid line (9).
2. heterojunction solar battery according to claim 1, it is characterized in that: described heterojunction solar battery is successively according to P layer (1), intrinsic layer (2), pyramid matte (4), N-type silicon substrate (3), pyramid matte (4), intrinsic layer (2), N+ layer (5) and silicon oxide layer (6) stack.
3. heterojunction solar battery according to claim 2, is characterized in that: described heterojunction solar battery front and back also arranges respectively nesa coating (10).
4. heterojunction solar battery according to claim 3, is characterized in that: described nesa coating (10) thickness is 100nm.
5. heterojunction solar battery according to claim 4, is characterized in that: the average height of described pyramid matte (4) is between 4~6um.
6. heterojunction solar battery according to claim 5, is characterized in that: described front main grid line (11) and back side main grid line (9) diameter are 0.5mm, and positive thin grid line (13) and the thin grid line in the back side (12) diameter are 0.1mm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201320442000.8U CN203415590U (en) | 2013-07-24 | 2013-07-24 | Heterojunction solar cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201320442000.8U CN203415590U (en) | 2013-07-24 | 2013-07-24 | Heterojunction solar cell |
Publications (1)
Publication Number | Publication Date |
---|---|
CN203415590U true CN203415590U (en) | 2014-01-29 |
Family
ID=49978457
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201320442000.8U Expired - Fee Related CN203415590U (en) | 2013-07-24 | 2013-07-24 | Heterojunction solar cell |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN203415590U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104347734A (en) * | 2013-07-24 | 2015-02-11 | 国电光伏有限公司 | Heterojunction solar battery and preparation method thereof |
-
2013
- 2013-07-24 CN CN201320442000.8U patent/CN203415590U/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104347734A (en) * | 2013-07-24 | 2015-02-11 | 国电光伏有限公司 | Heterojunction solar battery and preparation method thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN201966219U (en) | N type silicon solar cell | |
CN103594529A (en) | MWT and passivation combined crystal silicon solar cell and manufacturing method thereof | |
CN102569478A (en) | Thin-film amorphous silicon N-type crystalline silicon heterojunction tandem solar cell | |
CN204596801U (en) | A kind of N-type double-sided solar battery sheet of many main grids | |
CN101866971A (en) | Broken solar cells with selective emitting stage | |
CN203415590U (en) | Heterojunction solar cell | |
CN203674218U (en) | Crystalline silicon solar cell integrating MWP and passive emitter and rear cell technologies | |
CN203250771U (en) | Heterojunction silicon-based solar cell | |
CN202384349U (en) | Silicon-based heterojunction solar battery | |
CN204102912U (en) | A kind of Graphene silicon solar cell | |
CN202712196U (en) | Back electrode structure of N type back-contact bifacial solar cell | |
CN203250753U (en) | Solar battery sheet front-surface positive electrode | |
CN203491268U (en) | Novel double-sensitive-surface solar battery | |
CN202948936U (en) | Aluminum back field-free back passivation type solar crystal silicon cell | |
CN204497242U (en) | A kind of electrode structure of N-type double-side solar cell | |
CN203434166U (en) | Four-main grid positive electrode solar crystalline silica cell structure | |
CN104282772A (en) | Positive electrode solar crystalline silicon battery with four main grid lines | |
CN203883017U (en) | Perovskite solar cell with hole transport layer made of zinc telluride | |
CN103280496A (en) | Method for preparing crystalline silicon heterojunction/microcrystalline silicon thin film laminated photovoltaic cell | |
CN203150564U (en) | Solar cell front face grid line segmented cell piece | |
CN202004004U (en) | Solar battery and component thereof | |
CN201673918U (en) | Solar battery plate with selective emitting stage | |
CN202332870U (en) | Novel polycrystalline silicon solar battery grid line structure | |
CN204289471U (en) | A kind of crystal silicon solar energy battery structure | |
CN202712226U (en) | Thin-film solar cell module |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140129 Termination date: 20160724 |
|
CF01 | Termination of patent right due to non-payment of annual fee |