CN203411662U - Two-stage soaking graphite crucible for single crystal furnace - Google Patents
Two-stage soaking graphite crucible for single crystal furnace Download PDFInfo
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- CN203411662U CN203411662U CN201320310077.XU CN201320310077U CN203411662U CN 203411662 U CN203411662 U CN 203411662U CN 201320310077 U CN201320310077 U CN 201320310077U CN 203411662 U CN203411662 U CN 203411662U
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- crucible
- graphite
- main body
- single crystal
- card base
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Abstract
The utility model provides a two-stage soaking graphite crucible for a single crystal furnace. The two-stage soaking graphite crucible comprises a crucible body and a crucible base, wherein the crucible body is placed on the crucible base, and is composed of four identical crucible plates, the inner wall of each crucible plate is covered with a layer of non-stick layer, by splicing with each other through graphite paper tapes; the crucible body is frustum-shaped; soaking graphite cords which rise spirally are arranged on the outer walls of the crucible plates; a graphite ring is arranged at the top of the crucible body, and is circular; a positioning clamp foot is arranged at the lower end of each crucible plate, and is in the shape of a reversed frustum; a position groove is formed in the crucible base at each part corresponding to each positioning clamp foot; each position groove is cylindrical; the depth of each positioning groove is equal to the height of each positioning clamp foot; the diameter of each positioning groove is equal to the maximal diameter of each positioning clamp foot. The two-stage soaking graphite crucible solves the technical problem in the conventional graphite crucible that the heating is uneven, and the service life of the graphite crucible is prolonged.
Description
Technical field
The utility model relates to single crystal growing furnace plumbago crucible, is a kind of single crystal growing furnace two-part soaking plumbago crucible specifically.
Background technology
Existing plumbago crucible is simple overall construction design, the curved surface that its outside surface is relative standard, such structure be heating or heat radiation all exist bottom temp higher than the situation on top, crucible be heated inhomogeneous so that cause crucible cracking, scrap; Simultaneously plumbago crucible lacks effective stationary installation, and in use crucible top is as easy as rolling off a log in addition spatters silicon liquid, once this thing happens, the processing of just having to scrap of whole crucible, has seriously shortened work-ing life of crucible, has also increased cost simultaneously.
Utility model content
Technical problem to be solved in the utility model is exactly to overcome the defect that prior art exists, and provides a kind of heating uniform single crystal growing furnace plumbago crucible.
The utility model is achieved through the following technical solutions:
A kind of single crystal growing furnace two-part soaking plumbago crucible, comprise crucible main body and crucible holder, it is characterized in that: described crucible main body is placed on described crucible holder, the described crucible main body crucible plate that identical and inwall is provided with one deck adherent layer by four by graphite paper seal band mutually splicing surround, described crucible main body is taper type, and described in each, on the outer wall of crucible plate, dish is established the soaking graphite burr bar that spirrillum rises.
As optimization, the top of described crucible main body is provided with graphite annulus, and described graphite annulus is circular, and the lower end of described graphite annulus is provided with the interior card edge of annular, and the top of described crucible main body is provided with described interior card along suitable wild card edge.
As optimization, described in each, the lower end of crucible plate is provided with location card base, described location card base is inverted truncated cone, the described crucible holder position corresponding with the location card base of described crucible plate lower end is provided with detent, described detent is cylindric, the groove depth of described detent is consistent with the height of described location card base, and the diameter of described detent is consistent with the maximum diameter of described location card base.
The utlity model has simple in structure, with low cost, easy to use, design the advantages such as ingenious, well solved the technological deficiency problem of each position non-uniform temperature of conventional graphite crucible, extended the work-ing life of plumbago crucible, once overcome conventional graphite crucible top simultaneously, spatter silicon liquid, the defect of must whole crucible scrapping, can be widely used in the manufacturing of plumbago crucible.
Accompanying drawing explanation
Fig. 1 is the two dimensional structure schematic diagram of this single crystal growing furnace two-part soaking plumbago crucible;
Fig. 2 is the cross-sectional view of this single crystal growing furnace two-part soaking plumbago crucible;
In figure: card edge, 9-wild card edge in 1-crucible main body, 2-crucible holder, 3-crucible plate, 4-graphite paper envelope band, 5-adherent layer, 6-graphite burr bar, 7-graphite annulus, 8-.
Embodiment
In conjunction with Fig. 1 and Fig. 2, plumbago crucible comprises crucible main body 1 and crucible holder 2, crucible main body 1 is placed on crucible holder 2, the crucible main body 1 crucible plate 3 that identical and inwall is provided with one deck adherent layer 5 by four by graphite paper seal be with 4 mutually splicing surround, crucible main body 1 is taper type, and on the outer wall of each crucible plate 3, dish is established the soaking graphite burr bar 6 that spirrillum rises; The top of crucible main body is provided with graphite annulus 7, graphite annulus 7 is circular, the lower end of graphite annulus 7 is provided with the interior card of annular along 8, and the top of crucible main body 1 is provided with interior card along 8 suitable wild cards along 9, graphite annulus 7 by interior card along 8 with wild card along 9 dismountable being connected in crucible main body 1; The lower end of each crucible plate 3 is provided with location card base, location card base is inverted truncated cone, crucible holder 2 position corresponding with the location card base of crucible plate 3 lower ends is provided with detent, it is cylindric that detent is, the groove depth of detent is consistent with the height of location card base, and the diameter of detent is consistent with the maximum diameter of location card base.
The utility model includes but not limited to above-mentioned embodiment, and any product that meets the description of these claims, within all falling into protection domain of the present utility model.
Claims (3)
1. a single crystal growing furnace two-part soaking plumbago crucible, comprise crucible main body and crucible holder, it is characterized in that: described crucible main body is placed on described crucible holder, the described crucible main body crucible plate that identical and inwall is provided with one deck adherent layer by four by graphite paper seal band mutually splicing surround, described crucible main body is taper type, and described in each, on the outer wall of crucible plate, dish is established the soaking graphite burr bar that spirrillum rises.
2. single crystal growing furnace two-part soaking plumbago crucible according to claim 1, it is characterized in that: the top of described crucible main body is provided with graphite annulus, described graphite annulus is circular, the lower end of described graphite annulus is provided with the interior card edge of annular, and the top of described crucible main body is provided with described interior card along suitable wild card edge.
3. single crystal growing furnace two-part soaking plumbago crucible according to claim 1 and 2, it is characterized in that: described in each, the lower end of crucible plate is provided with location card base, described location card base is inverted truncated cone, the described crucible holder position corresponding with the location card base of described crucible plate lower end is provided with detent, described detent is cylindric, the groove depth of described detent is consistent with the height of described location card base, and the diameter of described detent is consistent with the maximum diameter of described location card base.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320310077.XU CN203411662U (en) | 2013-05-31 | 2013-05-31 | Two-stage soaking graphite crucible for single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320310077.XU CN203411662U (en) | 2013-05-31 | 2013-05-31 | Two-stage soaking graphite crucible for single crystal furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203411662U true CN203411662U (en) | 2014-01-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320310077.XU Expired - Fee Related CN203411662U (en) | 2013-05-31 | 2013-05-31 | Two-stage soaking graphite crucible for single crystal furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203411662U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111957367A (en) * | 2020-07-13 | 2020-11-20 | 大同新成新材料股份有限公司 | Semiconductor graphite plate for protecting crucible |
| CN113120909A (en) * | 2021-03-09 | 2021-07-16 | 浙江晶越半导体有限公司 | Preparation method of high-purity semi-insulating silicon carbide powder |
-
2013
- 2013-05-31 CN CN201320310077.XU patent/CN203411662U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111957367A (en) * | 2020-07-13 | 2020-11-20 | 大同新成新材料股份有限公司 | Semiconductor graphite plate for protecting crucible |
| CN113120909A (en) * | 2021-03-09 | 2021-07-16 | 浙江晶越半导体有限公司 | Preparation method of high-purity semi-insulating silicon carbide powder |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140129 Termination date: 20150531 |
|
| EXPY | Termination of patent right or utility model |