CN203352475U - Bypass circuit of power unit cascaded high-voltage inverter - Google Patents
Bypass circuit of power unit cascaded high-voltage inverter Download PDFInfo
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- CN203352475U CN203352475U CN 201320393671 CN201320393671U CN203352475U CN 203352475 U CN203352475 U CN 203352475U CN 201320393671 CN201320393671 CN 201320393671 CN 201320393671 U CN201320393671 U CN 201320393671U CN 203352475 U CN203352475 U CN 203352475U
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Abstract
The utility model provides a bypass circuit aimed at a power unit cascaded high-voltage inverter which is high in reliability, simple in structure, and low in cost. The circuit comprises a bypass circuit and a control circuit. The bypass circuit uses a common-emitter double IGBT module S5. Two collector electrodes PC1, PC2 of the common-emitter double IGBT module S5 are connected in parallel with output ends of the power unit. Grid electrodes G1 and G2 of the double IGBT are used as a shared-control end G1/G2 and are connected together (not shown in figures). The control circuit is connected with the shared-control end G1/G2 of the common-emitter double IGBT module and a common-emitter terminal PE1/PE2. When the power unit goes wrong, the control circuit drives the common-emitter double IGBT module S5 so that the module is connected and output ends of the power unit is in short circuit, thereby maintaining operation of a high-voltage inverter and preventing the high-voltage inverter from shutdown. Since the bypass circuit uses the common-emitter double IGBT module as bypass devices, the circuit can sustain very high dv/dt values and very short switch-on time, and compared with a method of driving the double IGBT respectively, a group of driving circuits are not needed.
Description
Technical field
The present invention relates to the bypass circuit of cascade of power units formula high voltage converter, relate in particular to the structure that bypass circuit can reliable and stablely be played a role.
Background technology
Along with process of industrialization, and the development of power technology, the application of high voltage variable frequency speed regulator is more and more extensive.And the high-voltage variable-frequency and variable-speed system consisted of power unit cascade is high with operating voltage, the excellent performance of the little grade of harmonic wave is subject to production firm, engineers and technicians and user's favor.
This high voltage converter, due to the power cell that uses a plurality of series connection, the fault of any one power cell all will cause shutting down.For some operating mode, the shutdown of high voltage converter may cause heavy economic losses.For improving its reliability, in prior art, usually at the output of each power cell bypass circuit in parallel; when power cell breaks down, make the bypass circuit conducting, by the output short circuit of fault power unit; maintain the operation of high voltage converter, prevent from shutting down.
The bypass circuit nowadays used in high voltage converter has two kinds.A kind of is the bypass circuit consisted of relay.A kind of is to add by rectifier bridge the bypass circuit that controllable silicon forms.The bypass circuit consisted of relay, due to the loose contact or can not accurately move sometimes of the mechanical contact of relay, has affected the reliability of system, less being employed at present, and generally adopt now the second bypass circuit as shown in Figure 1.But the second bypass circuit also has its drawback.Because the controllable silicon SCR that bypass segment is used can not be born too high dv/dt value, when the inversion IGBT of power cell device starts conducting, because the controllable silicon both end voltage is zero, the power cell DC voltage directly is added between controllable silicon sun negative electrode, controllable silicon can bear the dv/dt that can tolerate ability over itself, cause controllable silicon to mislead, cause power cell and short trouble occurs.
Summary of the invention
The purpose of this invention is to provide that a kind of work is more reliable and stable, low-loss, the bypass circuit of the simpler cascade of power units formula of structural design high voltage converter.
The shunting device that the first technical scheme of the present invention is a kind of cascade of power units formula high voltage converter, comprise bypass circuit and drive circuit, described bypass circuit comprises the two IGBT modules (S5) of common emitter, the two IGBT modules (S5) of this common emitter are connected to each other two IGBT(T1 together by emitter, T2) form, two collector electrode (PC1, PC2) be connected in parallel on respectively the output (L1 of power cell, L2), two IGBT(T1, T2) collector electrode (PC1, PC2) and emitter (PE1, PE2) between respectively reverse parallel connection fly-wheel diode (D1 is arranged, D2), two IGBT(T1, T2) grid (G1, G2) be connected to each other and form shared control end (G1/G2) together, the output of described drive circuit is connected with emitter terminal (PE1/PE2) with the shared control end (G1/G2) of the two IGBT modules (S5) of common emitter respectively, when the power cell fault, corresponding described drive circuit drives two IGBT module (S5) conductings of common emitter, output (L1 by the power cell of fault, L2) short circuit, to maintain the operation of high voltage converter.
Owing to using the two IGBT modules (S5) of common emitter as pass devices, conducting speed is faster, and loss is lower, the dv/dt value in the time of can bearing the cell power dynamic operation, and bypass circuit is simpler on structural design.
Due to two IGBT(T1, T2) grid (G1, G2) be connected to each other together to form in module and share control end (G1/G2), compare and not only can save one group of drive circuit with the mode separately two IGBT driven, can also be driven the two IGBT modules (S5) of common emitter with identical condition.
Due to the structure that adopts the two IGBT modules (S5) of common emitter docking, not only the switching characteristic of each IGBT can be consistent, two IGBT(T1, T2 of two differential concatenations) residing temperature conditions is consistent, also can keep the consistent of two IGBT parameter characteristics even temperature changes, make bypass circuit can keep steady operation under various temperature conditions.
The second technical scheme of the present invention is to realize on the basis of the first technical scheme, it is characterized in that, described bypass circuit also has pre-charge circuit, described pre-charge circuit is by two pre-charge resistance (R1, R2) form, these two pre-charge resistance (R1, R2) be serially connected in respectively positive bus-bar or negative busbar and the two output (L1 of described power cell, L2) between, by two pre-charge resistance (R1, while R2) making static state, power cell output (L1, L2) voltage difference between is zero, the dv/dt value of being born to reduce the two IGBT modules of common emitter.
Because pre-charge circuit makes voltage difference between the output (L1, L2) of power cell, be zero, can reduce the dv/dt value that pass devices is born, further guaranteed that the two IGBT modules (S5) of common emitter docking that are connected in parallel on the power model output can not be subject to too high dv/dt value, guarantee system reliability.
The 3rd technical scheme of the present invention is to realize on the basis of the first technical scheme, it is characterized in that, described bypass circuit also has pre-charge circuit, described pre-charge circuit consists of four charging paths, each charging paths is by pre-charge resistance (R1, R2, R3, R4) with charging capacitor (C1, C2, C3, C4) be composed in series, be connected in parallel on respectively four switching device (S1 of power cell, S2, S3, S4) two ends, by pre-charge resistance (R1, R2, R3, R4) with charging capacitor (C1, C2, C3, while C4) making static state, two output (L1 of power cell, L2) voltage difference between is zero, the dv/dt value of being born to reduce the two IGBT modules of common emitter.
Because pre-charge circuit makes voltage difference between the output (L1, L2) of power cell, be zero, can reduce the dv/dt value that pass devices is born, further guaranteed that the two IGBT modules (S5) of common emitter docking that are connected in parallel on the power model output can not be subject to too high dv/dt value, have improved system reliability.
On the basis that the 4th technical scheme of the present invention is arbitrary technical scheme in first to three, realize, it is characterized in that, described bypass circuit also has absorbing circuit, this absorbing circuit is comprised of resistance (RS1) and the electric capacity (RS1) of series connection, be connected in parallel between two collector electrodes (PC1, PC2) of the two IGBT modules of common emitter, with two outputs (L1, L2) that prevent power cell, produce the high voltage spike.
Due to two outputs that prevented power cell (L1, L2), i.e. the two IGBT modules (S5) of common emitter docking two ends produce the high voltage spike, prevent that the two IGBT modules (S5) of common emitter docking from, because overvoltage damages, having improved system reliability.
On the basis that the 5th technical scheme of the present invention is arbitrary technical scheme in first to three, realize, it is characterized in that, the inverter circuit of described power cell adopts H bridge power model, and the two IGBT modules of described common emitter and H bridge power model are arranged on same heating panel.
Because the two IGBT modules of common emitter are arranged on same heating panel with H bridge power model, the two IGBT modules of common emitter can share temperature protection mechanism with H bridge power model, do not need separately to establish temperature protection mechanism for common emitter pair IGBT modules.
The 6th technical scheme of the present invention is to realize on the basis of the 5th technical scheme, it is characterized in that, described drive circuit, when power cell works, is exported negative control voltage, and the two IGBT module degree of depth of common emitter are turn-offed.
While working due to power cell, the two IGBT modules of common emitter, in degree of depth off state, have increased antijamming capability, have improved system reliability.
The 7th technical scheme of the present invention is to realize on the basis of the 6th technical scheme, it is characterized in that, described drive circuit is when power cell works, the control voltage of output is negative voltage, its scope 0～-20V, preferably-7～-15V, to guarantee bypass IGBT, can not mislead.
The 8th technical scheme of the present invention be the 6th or the basis of the 7th technical scheme on realize, it is characterized in that, described drive circuit, when the power cell fault, is exported positive control voltage, make the two IGBT module conductings of common emitter, its voltage is set according to the rated current of power cell.
The 9th technical scheme of the present invention be the 6th or the basis of the 7th technical scheme on realize, it is characterized in that, described drive circuit is when the power cell fault, export positive control voltage, make two IGBT module (S5) conductings of common emitter, the scope of its voltage is 11～20V, preferably 14～15V.
The accompanying drawing explanation
Fig. 1 is current bypass circuit schematic diagram commonly used;
The circuit theory diagrams that Fig. 2 is embodiments of the invention 1;
The circuit theory diagrams that Fig. 3 is embodiments of the invention 2;
The circuit theory diagrams that Fig. 4 is embodiments of the invention 3
The structure principle chart that Fig. 5 is the two IGBT modules of the common emitter that uses in the present invention.
Embodiment
Below in conjunction with accompanying drawing, circuit working principle of the present invention is further described, each of tandem type high voltage converter is in series by a plurality of power models, shunting device consists of bypass circuit and drive circuit, and bypass circuit is connected in parallel on the two ends of the output of power model.Shunting device is subject to the main controller controls in the tandem type high voltage converter.That is,, when master controller detects the power model fault, stop the power model output control signal to this fault, and the information of this power model fault is sent to shunting device.Drive circuit driving bypass circuit in shunting device makes the output short circuit of the power model of fault, to maintain the operation of tandem type high voltage converter.
As shown in Figure 2, S1, S2, S3, S4, be the crucial switching device of H bridge power model, and S5 is the two IGBT pass devices of common emitter, and when H bridge power model is normally exported operation, the two IGBT devices of common emitter are operated in off-state.When H bridge power model breaks down, the S5 conducting is by the bypass of fault power module.
Fig. 3 is the bypass circuit of another kind of form of the present invention, as shown in Figure 3, S1, S2, S3, S4, Primary Component for H bridge power model, described bypass circuit forms pre-charge circuit by R1, R2, the two IGBT of S5 common emitter, CS1, RS1 absorbing circuit form, when the power model direct voltage powers on, when static state, the positive bus-bar of (when H bridge Converting Unit is not worked) power model is charged to certain voltage value by pre-charge resistance R1, R2 by output, making voltage difference between inverting output terminal L1, L2 is zero, now can reduce the d that pass devices is born
v/ dt value, improved the reliability of system, and the two IGBT of common emitter are off-state under normal circumstances, the due to voltage spikes of absorbing circuit absorbed power module output.Guarantee that S5 can not bear its maximum voltage value.
Embodiment 3
Fig. 4 is the bypass circuit of another kind of form of the present invention, as shown in Figure 4, S1, S2, S3, S4, Primary Component for H bridge power model, described bypass circuit is by R1, C1, R2, C2, R3, C3, R4, C4 forms pre-charge circuit, the two IGBT of S5 common emitter, CS1, RS1 forms absorbing circuit and forms, when the power model direct voltage powers on, when static state, (when H bridge Converting Unit is not worked) passes through R1, C1, R2, C2, R3, C3, R4, C4 is charged to certain voltage value, make inverting output terminal L1, between L2, voltage difference is zero, now can reduce pass devices S5 and can not bear too high dv/dt, improved the reliability of system.CS1, RS1 prevent output too high voltages spike.
In the present invention, adopt the two IGBT modules of common emitter as the two IGBT pass devices of common emitter.As shown in Figure 5, the two IGBT module S5 of common emitter are connected to each other two IGBT(T1, T2 together by emitter) and two sustained diode 1, D2 formation, two collector electrode PC1, PC2 of module are connected in parallel on respectively output L1, the L2 of H bridge power model in Fig. 2 to 3, and two sustained diode 1, D2 are connected in reverse parallel in respectively two IGBT(T1, T2) collector electrode PC1, PC2 and emitter PE1, PE2 between.Two IGBT(T1, T2) grid G 1, G2 be connected to each other together form that to share control end G1/G2(not shown in Fig. 5); the output of drive circuit is connected with emitter terminal PE1/PE2 with the shared control end (G1/G2) of the two IGBT module S5 of common emitter respectively; when H bridge power model fault; corresponding drive circuit drives the two IGBT module S5 conductings of common emitter; output L1, L2 short circuit by the H bridge power model of fault; even therefore H bridge power model fault still can maintain the operation of high voltage converter, prevented the economic loss caused because of shutdown.
For the two IGBT module S5 of the common emitter shown in Fig. 5, the present invention has just utilized its collector electrode PC1, PC2, the not shown shared control end G1/G2 be connected together altogether by two grids in inside modules in the emitter PE1/PE2 be connected together altogether in inside modules and Fig. 5.Because two grid G 1, G2 are connected together altogether in inside modules, with the form that shares control end G1/G2, with control circuit, be connected, guaranteed to be created in leakage inductance on each IGBT grid etc. consistent, compare with utilizing separately grid G 1, G2 and emitter E 1, E2, improved the job stability of the two IGBT module S5 of common emitter.
In the present invention, the two IGBT module S5 of common emitter and H bridge power model are arranged on same heating panel.Like this, when the problem such as excess Temperature appears in the two IGBT module S5 of common emitter, can utilize the temperature protection function of H bridge power model to be protected.And need not separately establish temperature protection mechanism for the two IGBT module S5 of common emitter, lowered cost.
When H bridge power model works, drive circuit is exported negative control voltage, and the two IGBT module S5 degree of depth of common emitter are turn-offed, and increases antijamming capability, has improved system reliability.
Control voltage when the degree of depth is turn-offed is general desirable 0～-20V, be recommended as-7～-15V; Preferably-7V, that is, the voltage of the voltage ratio emitter of grid hangs down 7V.
When the power cell fault, drive circuit is exported positive control voltage, makes the two IGBT module conductings of common emitter, its voltage is set according to the rated current of power cell, and general desirable 11～20V, be recommended as 14～15V, be preferably 15V, that is, and the high 15V of voltage of the voltage ratio emitter of grid.
The above, be only specific embodiments of the invention, do not limit the scope of the invention in proper order.Any equivalent transformation of doing based on technical solution of the present invention; in embodiment 2; pre-charge resistance R1, R2 are connected between the positive bus-bar and output L1, L2 of module; but also pre-charge resistance R1, R2 can be connected between the negative busbar and output L1, L2 of module, within similarly change all belongs to protection scope of the present invention.
Claims (9)
1. the shunting device of a cascade of power units formula high voltage converter, comprise bypass circuit and drive circuit, described bypass circuit comprises the two IGBT modules (S5) of common emitter, the two IGBT modules (S5) of this common emitter are connected to each other two IGBT(T1 together by emitter, T2) form, two collector electrode (PC1, PC2) be connected in parallel on respectively the output (L1 of power cell, L2), two IGBT(T1, T2) collector electrode (PC1, PC2) and emitter (PE1, PE2) between respectively reverse parallel connection fly-wheel diode (D1 is arranged, D2), two IGBT(T1, T2) grid (G1, G2) be connected to each other and form shared control end (G1/G2) together, the output of described drive circuit is connected with emitter terminal (PE1/PE2) with the shared control end (G1/G2) of the two IGBT modules (S5) of common emitter respectively, when the power cell fault, corresponding described drive circuit drives two IGBT module (S5) conductings of common emitter, output (L1 by the power cell of fault, L2) short circuit, to maintain the operation of high voltage converter.
2. the shunting device of cascade of power units formula high voltage converter according to claim 1, it is characterized in that, described bypass circuit also has pre-charge circuit, described pre-charge circuit is by two pre-charge resistance (R1, R2) form, these two pre-charge resistance (R1, R2) be serially connected in respectively positive bus-bar or negative busbar and the two output (L1 of described power cell, L2) between, by two pre-charge resistance (R1, while R2) making static state, power cell output (L1, L2) voltage difference between is zero, the dv/dt value of being born to reduce the two IGBT modules of common emitter.
3. the shunting device of cascade of power units formula high voltage converter according to claim 1, it is characterized in that, described bypass circuit also has pre-charge circuit, described pre-charge circuit consists of four charging paths, each charging paths is by pre-charge resistance (R1, R2, R3, R4) with charging capacitor (C1, C2, C3, C4) be composed in series, be connected in parallel on respectively four switching device (S1 of power cell, S2, S3, S4) two ends, by pre-charge resistance (R1, R2, R3, R4) with charging capacitor (C1, C2, C3, while C4) making static state, two output (L1 of power cell, L2) voltage difference between is zero, the dv/dt value of being born to reduce the two IGBT modules of common emitter.
4. according to the shunting device of the described cascade of power units formula of any one in claims 1 to 3 high voltage converter, it is characterized in that, described bypass circuit also has absorbing circuit, this absorbing circuit is comprised of resistance (RS1) and the electric capacity (RS1) of series connection, be connected in parallel between two collector electrodes (PC1, PC2) of the two IGBT modules (S5) of common emitter, with two outputs (L1, L2) that prevent power cell, produce the high voltage spike.
5. according to the shunting device of the described cascade of power units formula of any one in claims 1 to 3 high voltage converter, it is characterized in that, the inverter circuit of described power cell adopts H bridge power model, and the two IGBT modules (S5) of institute's common emitter are arranged on same heating panel with H bridge power model.
6. the shunting device of cascade of power units formula high voltage converter according to claim 5, is characterized in that, described drive circuit, when power cell works, is exported negative control voltage, and two IGBT module (S5) degree of depth of common emitter are turn-offed.
7. the shunting device of cascade of power units formula high voltage converter according to claim 6, is characterized in that, described drive circuit is when power cell works, the control voltage of output is negative voltage, its scope 0～-20V, preferably-7～-15V, to guarantee bypass IGBT, can not mislead.
8. according to the shunting device of the described cascade of power units formula of claim 6 or 7 high voltage converter, it is characterized in that, described drive circuit is when the power cell fault, export positive control voltage, make two IGBT module (S5) conductings of common emitter, its voltage is set according to the rated current of power cell.
9. according to the shunting device of the described cascade of power units formula of claim 6 or 7 high voltage converter, it is characterized in that, described drive circuit is when the power cell fault, export positive control voltage, make two IGBT module (S5) conductings of common emitter, the scope of its voltage is 11～20V, preferably 14～15V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320393671 CN203352475U (en) | 2013-07-03 | 2013-07-03 | Bypass circuit of power unit cascaded high-voltage inverter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320393671 CN203352475U (en) | 2013-07-03 | 2013-07-03 | Bypass circuit of power unit cascaded high-voltage inverter |
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| CN203352475U true CN203352475U (en) | 2013-12-18 |
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| CN 201320393671 Expired - Lifetime CN203352475U (en) | 2013-07-03 | 2013-07-03 | Bypass circuit of power unit cascaded high-voltage inverter |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106849634A (en) * | 2017-03-14 | 2017-06-13 | 特变电工新疆新能源股份有限公司 | A kind of bypass circuit |
| WO2018177532A1 (en) * | 2017-03-31 | 2018-10-04 | Abb Schweiz Ag | Filter for high-voltage power converters |
-
2013
- 2013-07-03 CN CN 201320393671 patent/CN203352475U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106849634A (en) * | 2017-03-14 | 2017-06-13 | 特变电工新疆新能源股份有限公司 | A kind of bypass circuit |
| WO2018177532A1 (en) * | 2017-03-31 | 2018-10-04 | Abb Schweiz Ag | Filter for high-voltage power converters |
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Address after: 100043 Shijingshan District City, the ancient city of Beijing, West Street, No. 19 small and medium enterprises base Patentee after: HICONICS ECO-ENERGY TECHNOLOGY Co.,Ltd. Address before: 100176, No. two, No. 3, Yizhuang Economic Development Zone, Beijing, Beijing, Daxing District, Boxing Patentee before: HICONICS DRIVE TECHNOLOGY CO.,LTD. |
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Effective date of registration: 20210709 Address after: 100176 No.3, boxing 2nd Road, Yizhuang Economic and Technological Development Zone, Daxing District, Beijing Patentee after: BEIJING HEKANG XINNENG FREQUENCY CONVERSION TECHNOLOGY Co.,Ltd. Address before: 100043, Beijing Shijingshan District ancient West Street, No. 19 small and medium sized enterprises base of science and Technology Hospital Patentee before: HICONICS ECO-ENERGY TECHNOLOGY Co.,Ltd. |
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