CN203327251U - Pre-heating device for silicon chip test - Google Patents

Pre-heating device for silicon chip test Download PDF

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Publication number
CN203327251U
CN203327251U CN2013203394608U CN201320339460U CN203327251U CN 203327251 U CN203327251 U CN 203327251U CN 2013203394608 U CN2013203394608 U CN 2013203394608U CN 201320339460 U CN201320339460 U CN 201320339460U CN 203327251 U CN203327251 U CN 203327251U
Authority
CN
China
Prior art keywords
heating
silicon chip
test
heating frame
lamp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2013203394608U
Other languages
Chinese (zh)
Inventor
费跃伟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ZHEJIANG COMPUL SOLAR TECHNOLOGY Co Ltd
Original Assignee
ZHEJIANG COMPUL SOLAR TECHNOLOGY Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ZHEJIANG COMPUL SOLAR TECHNOLOGY Co Ltd filed Critical ZHEJIANG COMPUL SOLAR TECHNOLOGY Co Ltd
Priority to CN2013203394608U priority Critical patent/CN203327251U/en
Application granted granted Critical
Publication of CN203327251U publication Critical patent/CN203327251U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

The utility model discloses a pre-heating device for a silicon chip test. The pre-heating device for the silicon chip test includes a heating frame arranged in front of a test magazine. A traveling arm penetrates through the heating frame and transfers a silicon chip into the test magazine. The top part of the heating frame is provided with a heating source for heating the silicon chip being transferred on the travelling arm. The heating source is an infrared ray heating lamp. A power line of the infrared ray heating lamp penetrates into the heating frame from the top part. The infrared ray heating lamp is controlled by a heating switch arranged outside the heating frame. According to the utility model, the infrared heating lamp with adjustable heating efficiency is installed on the sintering and feeding travelling arm additionally. The infrared ray heating lamp is turned on when the to-be-tested silicon chip are being transferred and surface temperature of the to-be-tested silicon chip is increased through radiative heat transfer of infrared rays, so that the to-be-tested silicon chip can meet temperature requirements of the test. Therefore, turning on an air condition for adjusting temperature is also avoided, so that energy consumption is reduced.

Description

Heater before silicon test
Technical field
The utility model relates to the front heater of silicon test.
Background technology
Silicon chip surface temperature and silicon chip surface temperature contrast to be tested that sintering flows out are larger, and when the workshop temperature meets the test request of sintering outflow silicon chip, silicon chip surface temperature to be tested is usually on the low side.Peripheral air-conditioning system is difficult to make both to meet test request simultaneously, and adjust frequently air-conditioner temperature, has greatly increased energy consumption.
The utility model content
Technical problem to be solved in the utility model just is to provide the front heater of a kind of silicon test, makes silicon chip to be tested meet probe temperature, reduces the energy consumption that air-conditioning system produces.
For solving the problems of the technologies described above, the utility model adopts following technical scheme: heater before silicon test, it is characterized in that: comprise and be located at the front heating frame of test camera bellows, walking arm is carried silicon chip through heating frame to the test camera bellows, and described heating frame top is provided with the silicon chip of carrying on heating source heating walking arm.
Preferably, described heating frame is the door shape bezel that is erected at the walking arm top, and described heating frame top outer is equipped with the thermal radiation film.Prevent scattering and disappearing of radiant heat energy, energy savings.
Preferably, described heating source is infrared heating lamp, and the infrared heating lamp power line penetrates from the heating frame top, and described infrared heating lamp is controlled by the heater switch of being located at the heating frame outside.
Preferably, described heater switch is provided with one-level heat button and secondary heat button.
The utility model installs the heat lamp that can regulate the efficiency of heating surface additional at sintering blanking walking arm place, when silicon chip to be tested is carried, open infrared heating lamp, improve the surface temperature of silicon chip to be tested by ultrared radiant heat transfer, the temperature requirement while making silicon chip to be tested meet test, so also avoided the unlatching air-conditioning to adjust temperature, reduced energy consumption, and this heater is simple in structure, repacking is convenient, with low cost.
The accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the utility model is further described:
Fig. 1 is structural representation of the present utility model.
Embodiment
Below in conjunction with Fig. 1 to silicon test before heater make and illustrating.
As shown in Figure 1, the front heater of this silicon test comprises is located at the front heating frame 3 of test camera bellows 1, and walking arm 2 is through heating frame to test camera bellows conveying silicon chip 4, and described heating frame top is provided with the silicon chip of carrying on heating source heating walking arm.Described heating frame is the door shape bezel that is erected at the walking arm top, and described heating frame top outer is equipped with the thermal radiation film.Described heating source is infrared heating lamp, and the infrared heating lamp power line penetrates from the heating frame top, and described infrared heating lamp is controlled by the heater switch of being located at the heating frame outside.Described heater switch is provided with one-level heat button and secondary heat button.
When silicon chip out of proper testing sintering furnace, without opening heating, when testing when flowing silicon chip, if the silicon chip surface temperature is on the low side, need to open heating.
In addition, depending on temperature difference size, determine whether opening the secondary heating, generally, in the situation of silicon chip surface temperature lower than 1 ℃~2 ℃ of normal temperatures (25 ℃), only need to open the one-level heating.

Claims (4)

1. heater before silicon test is characterized in that: comprise the heating frame of being located at before the test camera bellows, walking arm is carried silicon chip through heating frame to the test camera bellows, and described heating frame top is provided with the silicon chip of carrying on heating source heating walking arm.
2. heater before silicon test according to claim 1, it is characterized in that: described heating frame is the door shape bezel that is erected at the walking arm top, and described heating frame top outer is equipped with the thermal radiation film.
3. heater before silicon test according to claim 2, it is characterized in that: described heating source is infrared heating lamp, the infrared heating lamp power line penetrates from the heating frame top, and described infrared heating lamp is controlled by the heater switch of being located at the heating frame outside.
4. heater before silicon test according to claim 3, it is characterized in that: described heater switch is provided with one-level heat button and secondary heat button.
CN2013203394608U 2013-06-13 2013-06-13 Pre-heating device for silicon chip test Expired - Fee Related CN203327251U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2013203394608U CN203327251U (en) 2013-06-13 2013-06-13 Pre-heating device for silicon chip test

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2013203394608U CN203327251U (en) 2013-06-13 2013-06-13 Pre-heating device for silicon chip test

Publications (1)

Publication Number Publication Date
CN203327251U true CN203327251U (en) 2013-12-04

Family

ID=49666540

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2013203394608U Expired - Fee Related CN203327251U (en) 2013-06-13 2013-06-13 Pre-heating device for silicon chip test

Country Status (1)

Country Link
CN (1) CN203327251U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103347313A (en) * 2013-06-13 2013-10-09 浙江光普太阳能科技有限公司 Heating device before silicon wafer test

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103347313A (en) * 2013-06-13 2013-10-09 浙江光普太阳能科技有限公司 Heating device before silicon wafer test

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20131204

Termination date: 20170613

CF01 Termination of patent right due to non-payment of annual fee