CN103338535A - Manufacturing method of device for heating before testing silicon wafer - Google Patents
Manufacturing method of device for heating before testing silicon wafer Download PDFInfo
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- CN103338535A CN103338535A CN2013102347962A CN201310234796A CN103338535A CN 103338535 A CN103338535 A CN 103338535A CN 2013102347962 A CN2013102347962 A CN 2013102347962A CN 201310234796 A CN201310234796 A CN 201310234796A CN 103338535 A CN103338535 A CN 103338535A
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- heating
- heating frame
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Abstract
The invention discloses a manufacturing method of a device for heating before testing a silicon wafer. The manufacturing method comprises the following steps: at first, a portal heating frame made of glass is set up above a traveling arm in front of a tested black box, wherein an electric wire hole is drilled in the top of the heating frame, a thermal radiation film is laid on the outer side of the top of the heating frame; then, an infrared heating lamp is mounted at the top of the heating frame, and an infrared heating lamp power cord penetrates from the electric wire hole in the top of the heating frame and is connected with the infrared heating lamp; at last, a heating switch is mounted on the outer side of the heating frame. When a to-be-tested silicon wafer is conveyed, the infrared heating lamp is turned on, and the surface temperature of the to-be-tested silicon wafer is increased through infrared light radiation and heat transfer, so that the to-be-tested silicon wafer meets the temperature requirement in testing, which avoids the condition that the temperature is adjusted through turning-on of an air conditioner, the energy consumption is reduced, and the heating device is convenient to refit, and is low in cost.
Description
Technical field
The present invention relates to the preceding heater manufacture method of silicon test.
Background technology
Silicon chip surface temperature and silicon chip surface temperature contrast to be tested that sintering flows out are bigger, and when the workshop temperature satisfied the test request of sintering outflow silicon chip, silicon chip surface temperature to be tested was on the low side usually.Peripheral air-conditioning system is difficult to make both to satisfy test request simultaneously, has increased energy consumption greatly and adjust air-conditioner temperature frequently.
Summary of the invention
Technical problem to be solved by this invention just provides the preceding heater manufacture method of a kind of silicon test, and method is simple, but the heater of producing can make silicon chip to be tested satisfy probe temperature, reduces the energy consumption that air-conditioning system produces.
For solving the problems of the technologies described above, the present invention adopts following technical scheme: heater manufacture method before the silicon test, the walking arm is carried silicon chip to be tested to the test camera bellows, it is characterized in that: at first, set up the door shape heating frame of glass system above the walking arm before the test camera bellows, wherein the heating frame top is drilled with wire hole, and the heating frame top outer is equipped with the thermal radiation film; Then, the infrared ray heating lamp is installed at the heating frame top, infrared ray heating lamp power line penetrates with the infrared ray heating lamp from the wire hole at heating frame top and is connected; At last, in the heating frame outside heater switch is installed; When silicon chip to be tested is carried, open the infrared ray heating lamp, improve the surface temperature of silicon chip to be tested, the temperature requirement when making silicon chip to be tested satisfy test by ultrared radiant heat transfer.
Preferably, described heater switch is provided with one-level heat button and secondary heat button; When the silicon chip surface temperature under 23 ℃～25 ℃ situation, only need to open the one-level heat button, be lower than when the silicon chip surface temperature under 23 ℃ the situation, need to open the secondary heat button.
The present invention is installed a heater additional at sintering blanking walking arm place, this heater is provided with the heat lamp that can regulate the efficiency of heating surface, when silicon chip to be tested is carried, open the infrared ray heating lamp, improve the surface temperature of silicon chip to be tested by ultrared radiant heat transfer, temperature requirement when making silicon chip to be tested satisfy test, so also avoided the unlatching air-conditioning to adjust temperature, reduced energy consumption, and this heater is simple in structure, repacking is convenient, and is with low cost.
Description of drawings
Below in conjunction with the drawings and specific embodiments the present invention is further described:
Fig. 1 is the structural representation of heater of the present invention.
Embodiment
Make below in conjunction with heater before the silicon test of Fig. 1 and to specify.
As shown in Figure 1, heater comprises the heating frame of being located at before the test camera bellows 13 before this silicon test, and walking arm 2 passes heating frame and carries silicon chip 4 to the test camera bellows, and described heating frame top is provided with the silicon chip of carrying on the heating source heating walking arm.Described heating frame is the door shape bezel that is erected at walking arm top, and described heating frame top outer is equipped with the thermal radiation film.Described heating source is the infrared ray heating lamp, and infrared ray heating lamp power line penetrates from the heating frame top, and described infrared ray heating lamp is by the heater switch control of being located at the heating frame outside.Described heater switch is provided with one-level heat button and secondary heat button.
Below the manufacture method of above-mentioned heater is explained: at first, set up the door shape heating frame of glass system above the walking arm before the test camera bellows, wherein the heating frame top is drilled with wire hole, and the heating frame top outer is equipped with the thermal radiation film; Then, the infrared ray heating lamp is installed at the heating frame top, infrared ray heating lamp power line penetrates with the infrared ray heating lamp from the wire hole at heating frame top and is connected; At last, in the heating frame outside heater switch is installed.Described heater switch is provided with one-level heat button and secondary heat button; When the silicon chip surface temperature under 23 ℃～25 ℃ situation, only need to open the one-level heat button, be lower than when the silicon chip surface temperature under 23 ℃ the situation, need to open the secondary heat button.When silicon chip that the proper testing sintering furnace comes out, need not to open heating, when test is waited to flow silicon chip, if the silicon chip surface temperature is on the low side, then need to open heating.
Claims (2)
1. heater manufacture method before the silicon test, the walking arm is carried silicon chip to be tested to the test camera bellows, it is characterized in that: at first, set up the door shape heating frame of glass system above the walking arm before the test camera bellows, wherein the heating frame top is drilled with wire hole, and the heating frame top outer is equipped with the thermal radiation film; Then, the infrared ray heating lamp is installed at the heating frame top, infrared ray heating lamp power line penetrates with the infrared ray heating lamp from the wire hole at heating frame top and is connected; At last, in the heating frame outside heater switch is installed; When silicon chip to be tested is carried, open the infrared ray heating lamp, improve the surface temperature of silicon chip to be tested, the temperature requirement when making silicon chip to be tested satisfy test by ultrared radiant heat transfer.
2. heater manufacture method before the silicon test according to claim 1, it is characterized in that: described heater switch is provided with one-level heat button and secondary heat button; When the silicon chip surface temperature under 23 ℃～25 ℃ situation, only need to open the one-level heat button, be lower than when the silicon chip surface temperature under 23 ℃ the situation, need to open the secondary heat button.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013102347962A CN103338535A (en) | 2013-06-13 | 2013-06-13 | Manufacturing method of device for heating before testing silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013102347962A CN103338535A (en) | 2013-06-13 | 2013-06-13 | Manufacturing method of device for heating before testing silicon wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103338535A true CN103338535A (en) | 2013-10-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013102347962A Pending CN103338535A (en) | 2013-06-13 | 2013-06-13 | Manufacturing method of device for heating before testing silicon wafer |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1551325A (en) * | 2003-05-19 | 2004-12-01 | 模拟微电子学股份有限公司 | System and method for heating semiconductor in standard test environment |
| CN2796093Y (en) * | 2004-01-05 | 2006-07-12 | 台湾积体电路制造股份有限公司 | Semiconductor module producing system |
| CN201004454Y (en) * | 2006-07-13 | 2008-01-09 | 中芯国际集成电路制造(上海)有限公司 | A heating device for semiconductor reliability test with temperature control function |
| CN101727118A (en) * | 2008-10-22 | 2010-06-09 | 北京中科信电子装备有限公司 | Rapid heat-treatment temperature measuring and controlling system and measuring and controlling method |
-
2013
- 2013-06-13 CN CN2013102347962A patent/CN103338535A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1551325A (en) * | 2003-05-19 | 2004-12-01 | 模拟微电子学股份有限公司 | System and method for heating semiconductor in standard test environment |
| CN2796093Y (en) * | 2004-01-05 | 2006-07-12 | 台湾积体电路制造股份有限公司 | Semiconductor module producing system |
| CN201004454Y (en) * | 2006-07-13 | 2008-01-09 | 中芯国际集成电路制造(上海)有限公司 | A heating device for semiconductor reliability test with temperature control function |
| CN101727118A (en) * | 2008-10-22 | 2010-06-09 | 北京中科信电子装备有限公司 | Rapid heat-treatment temperature measuring and controlling system and measuring and controlling method |
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Application publication date: 20131002 |