CN203312298U - Image sensor packaging structure and image sensor module - Google Patents
Image sensor packaging structure and image sensor module Download PDFInfo
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- CN203312298U CN203312298U CN2013203127772U CN201320312777U CN203312298U CN 203312298 U CN203312298 U CN 203312298U CN 2013203127772 U CN2013203127772 U CN 2013203127772U CN 201320312777 U CN201320312777 U CN 201320312777U CN 203312298 U CN203312298 U CN 203312298U
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- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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Abstract
The utility model provides an image sensor packaging structure and an image sensor module. The image sensor packaging structure comprises an image sensor chip and a lead board fixedly connected with the image sensor chip. A functional surface of the image sensor chip is provided with a light-sensing zone and a non-light-sensing zone. The light-sensing zone is provided with a pixel unit. The non-light-sensing zone is provided with a first electrode. Protective glue is arranged at the side surface of the image sensor chip. The lead board is provided with a frame board and an internally arranged wire penetrating the thickness of the frame board. An opening is formed in the frame board. The light-sensing zone is exposed through the opening. One end of the internally arranged wire is electrically connected with the first electrode. In the image sensor packaging structure, the yield of each part can be controlled independently, so that the reliability is high, the heat dissipating performance is good, and the ultrathin thickness of the structure can be obtained.
Description
Technical field
The utility model relates to field of image sensors, and characteristics relate to a kind of image sensor package structure and imageing sensor module.
Background technology
Imageing sensor is a kind of semiconductor device arrangements that optical information (optical information) is converted to the signal of telecommunication.The conventional images transducer can be further divided into complementary metal oxide semiconductors (CMOS) (CMOS) imageing sensor and charge-coupled device (CCD) imageing sensor.
Along with semicon industry microminiaturization, the trend of multifunction and the competition in market, electronic product of new generation has higher requirement to imageing sensor, for example less profile and lower cost.Yet traditional image sensor package method is normally guided to the back side by the pad of imageing sensor functional surfaces, then makes overleaf conductive weld or pin, so that resulting image sensor package structure can be connected with external circuit.
But there is following shortcoming in conventional images sensor package method:
1. conventional images sensor package method need to be made back side deriving structure on imageing sensor, be that described back side deriving structure can't break away from imageing sensor and first complete separately, therefore the yield of back side deriving structure is not easy independent control, and the making yield of back side deriving structure is not high, cause the packaging technology yield low.
2. conventional images sensor package method is except needs arrange back side deriving structure; also need to protective substrate protection be set at the imageing sensor functional surfaces; like this; therefore the functional surfaces of imageing sensor and the back side all need to increase certain thickness, can't must be thinner by the image sensor package structure fabrication.
3. while imageing sensor being arranged to back side deriving structure; the structures such as insulating barrier and protective layer need to be set overleaf; to protect corresponding wire; yet the setting of these wires, insulating barrier or protective layer; not only increase complexity and the process costs of image sensor package, and the heat dispersion of formed image sensor package structure is descended.
Corresponding, the conventional images sensor-packaging structure exists the problem that reliability is low, thickness is large and heat dispersion is poor.Because there are the problems referred to above in conventional images sensor-packaging structure and method for packing, conventional images sensor module formation method can exist equally that the manufacture craft yield is low, complex process and the high problem of process costs, and there is the large and poor problem of heat dispersion of thickness equally in the conventional images sensor module.
More contents about image sensor package can be that CN102544040A(2012 July 4 is open with reference to publication number) Chinese patent application.
For this reason, need a kind of image sensor package method and encapsulating structure badly, and the imageing sensor module and forming method thereof, to solve conventional images sensor package method complex process and the high problem of process costs, large and the poor problem of heat dispersion of conventional images sensor-packaging structure thickness, conventional images sensor module formation method complex process and the high problem of process costs, and conventional images sensor module thickness is large and the poor problem of heat dispersion.
The utility model content
The problem that the utility model solves is to provide a kind of image sensor package structure and imageing sensor module, so that the thickness of image sensor package structure and imageing sensor module reduces, heat dispersion improves.
For addressing the above problem, the utility model provides a kind of image sensor package structure, comprising:
Image sensor chip, the functional surfaces of described image sensor chip have photosensitive region and non-photosensitive region, and described photosensitive region has pixel cell, and described non-photosensitive region has the first electrode, and the side of described image sensor chip is provided with protection glue;
The lead plate be fixedly connected with described image sensor chip, described lead plate has deckle board and runs through the inner conductors of described deckle board thickness, described deckle board has opening, and described opening exposes described photosensitive region, and an end of described inner conductors is electrically connected to described the first electrode.
Optionally, described image sensor package structure also comprises: transparency carrier, described transparency carrier are fixed on described deckle board and cover described opening.
Optionally, described deckle board upper surface is provided with the second electrode, and the other end of described inner conductors is electrically connected to described the second electrode.
Optionally, described deckle board comprises the first upper surface and the second upper surface, and described the first upper surface is higher than described the second upper surface; Described the second electrode is positioned at described the first upper surface; Described transparency carrier is fixed on described the second upper surface, and the upper surface of described transparency carrier is lower than described the first upper surface.
Optionally, described the second electrode is conductive weld, the upper surface flush of its top and described transparency carrier.
Optionally, the upper surface of described transparency carrier and lower surface one of them has optical coating at least.
Optionally, described optical coating comprises infrared cut coating or anti-reflective film.
Optionally, described inner conductors is electrically connected to the mode of described the first electrode by welding or conductive adhesive.
Optionally, described deckle board is provided with passive device.
Optionally, the material of described deckle board comprises ceramic material, organic material, glass material or silicon materials.
Optionally, the medial surface of described deckle board and the side of described image sensor chip are bonding, by metal wire, are electrically connected between an end of described inner conductors and described the first electrode.
Optionally, the inner surface of described deckle board and the side of described image sensor chip and bottom are bonding, by metal wire, are electrically connected between an end of described inner conductors and described the first electrode.
Optionally, the bottom of described deckle board is run through by many thermal conductive wires, and the two ends of described thermal conductive wire are connected with respectively conducting strip, and the described conducting strip that is positioned at described deckle board inner surface is bonding by the back side of glue material and described image sensor chip.
For addressing the above problem, the utility model also provides a kind of imageing sensor module, comprising:
Image sensor package structure as above, described inner conductors is electrically connected to printed circuit board (PCB), on described printed circuit board (PCB), is provided with the camera lens module.
Compared with prior art, the technical solution of the utility model has the following advantages:
In image sensor package structure provided by the utility model, because the yield of each several part in forming process can be controlled separately, therefore described image sensor package structural reliability is high.Owing to not needing to form overleaf the structures such as wire, protective layer and insulating barrier, so the image sensor package structure has good heat dispersion.Owing to not needing that back side deriving structure is set, but utilize on original functional surfaces the structure fabrication deriving structures such as protective substrate just need to be set, therefore described image sensor package structure can have ultra-thin thickness.
Imageing sensor module provided by the utility model is owing to having image sensor package structure provided by the utility model, and therefore, described imageing sensor module reliability is high, perfect heat-dissipating, and thickness is little.
The accompanying drawing explanation
Fig. 1 to Fig. 6 is the schematic diagram of the utility model embodiment mono-image sensor package method;
Fig. 7 to Fig. 9 is the schematic diagram of the utility model embodiment tri-image sensor package methods;
Figure 10 is the schematic diagram of the utility model embodiment five image sensor package structures;
Figure 11 is the schematic diagram of the utility model embodiment six image sensor package structures;
Figure 12 is the schematic diagram of the utility model embodiment seven image sensor package structures;
Figure 13 is the schematic diagram of the utility model embodiment eight image sensor package structures;
Figure 14 to Figure 16 is the schematic diagram of the utility model embodiment nine imageing sensor module formation methods;
Figure 17 is the schematic diagram of the utility model embodiment 11 imageing sensor modules.
Embodiment
In existing image sensor package method, the mode that the pad of imageing sensor functional surfaces is connected to the back side has T-shaped connection and silicon through hole (Through silicon Via, TSV) to connect.For T-shaped connected mode, the connection area of T-shaped connection is very little, probably chap, easily cause the problem of the poor reliability of jointing, and T-shaped junction is subject to penetration of moisture, thereby cause T-shaped junction to subject to corrosion, produce the problem that the poor reliability such as is peeled off in T-shaped junction, the encapsulation of T-shaped connected mode often can't be by reliability testings such as high temperature/high humidity.
For silicon through hole connected mode, it need to use the RIE(reactive ion etching usually), the CVD(chemical vapour deposition (CVD)) and the CMP(chemical-mechanical planarization) etc. technique, thereby it is with high costs.And in using dry plasma etch technique, whole imageing sensor is exposed under the bombardment of ion, easily causes the inefficacy of imageing sensor.In silicon through hole connected mode, between substrate and steel structure, only has the insulating barrier that one deck is very thin, make interconnecting silicon through holes form very high electric capacity, sometimes even surpassed the capacitance of standard wire interconnection mode, make equally imageing sensor have the problem of poor reliability.
In addition, above-mentioned two kinds of modes are all at the making back side, the back side of imageing sensor deriving structure, and therefore, the image sensor package structure that described method obtains all exists thickness large, the problem that heat dispersion is poor.
The utility model provides a kind of image sensor package method and structure, imageing sensor module and formation method.Described image sensor package method provides respectively image sensor chip and lead plate, and described image sensor chip functional surfaces has photosensitive region and non-photosensitive region, and described photosensitive region has pixel cell, and described non-photosensitive region has the first electrode.Described lead plate has deckle board and runs through the inner conductors of described deckle board thickness, and described deckle board has opening.Then described lead plate is fixed on the functional surfaces of described image sensor chip, described opening exposes described photosensitive region, and an end of described inner conductors is electrically connected to described the first electrode.Due to image sensor chip and lead plate making separately respectively, therefore can control respectively the yield of image sensor chip and lead plate, thereby can improve the packaging technology yield.And lead plate is arranged on the functional surfaces of image sensor chip, be formed on the image sensor package structure that the functional surfaces top arranges conduction connecting structure, and the image sensor chip back side does not need to process, therefore the thickness of described image sensor package structure is little, and because the back side does not increase structure, so described image sensor package structure perfect heat-dissipating.
For above-mentioned purpose of the present utility model, feature and advantage can more be become apparent, below in conjunction with accompanying drawing, specific embodiment of the utility model is described in detail.
It should be noted that, because each structural symmetry related in this Figure of description is higher, for more clearly showing, when mark, in same width figure, only mark is once for same structure.
The utility model embodiment mono-provides a kind of image sensor package method, please in conjunction with referring to figs. 1 to Fig. 6.
Please refer to Fig. 1, at first image sensor chip is provided.Image sensor chip comprises functional surfaces 111.On functional surfaces 111, be provided with pixel cell 111a, the zone at pixel cell 111a place is photosensitive region, and the zone in functional surfaces 111 except photosensitive region is non-photosensitive region, in non-photosensitive region, is provided with the first electrode 111b.
Please refer to Fig. 2, Fig. 2 is that structure shown in Figure 1 is dissectd the cutaway view obtained along the A-A line, and as can see from Figure 2, image sensor chip also comprises Semiconductor substrate 112, and pixel cell 111a and the first electrode 111b are formed on Semiconductor substrate 112.Semiconductor substrate 112 inside can be formed with the semiconductor device such as photodiode and metal-oxide-semiconductor.Semiconductor substrate 112 also comprises the conductive interconnecting structure (not shown) that pixel cell 111a is electrically connected to the first electrode 111b, can be electrically connected to external circuit by the first electrode 111b to guarantee pixel cell 111a.
Please refer to Fig. 3, lead plate is provided.Lead plate comprises deckle board 121, and deckle board 121 has opening 122, and opening 122 runs through deckle board 121.In the present embodiment, deckle board 121 has two openings 122, and opening 122 is for the follow-up pixel cell 111a that exposes Fig. 1.On deckle board 121 between two openings 122, have Cutting Road 125, Cutting Road 125 is follow-up cutting cabling when lead plate is cut.
It should be noted that, in other embodiment of the present utility model, lead plate can comprise three, four or more opening.When described lead plate had three openings, its follow-up can correspondingly being fixed together with three image sensor chips, then cut, and forms three image sensor package structures.When described lead plate has four openings, its follow-up can correspondingly being fixed together with four image sensor chips, then, by cutting, form four image sensor package structures.But described lead plate also can only comprise an opening, and, after its follow-up and an image sensor chip be fixed together, without cutting, can form the image sensor package structure.
On the first upper surface 121a, be provided with passive device 126, passive device 126 can be such as capacity cell or resistive element or inductance element etc.Passive device 126 the space that can take full advantage of deckle board 121 upper surfaces is set, the passive device 126 that originally need to be made on printed circuit board (PCB) or flexible printed circuit board is produced on to the first upper surface 121a, thereby makes follow-up printed circuit board (PCB) or the flexible printed circuit board structure be connected with the image sensor package structure simpler.
On the second upper surface 121b, also be provided with glue point 101, separated by a distance being distributed on the second upper surface 121b between each glue point 101.Glue point 101 please refer to Fig. 5 for follow-up by transparency carrier 124() be fixed on the second upper surface 121b of deckle board 121.
Please refer to Fig. 4, Fig. 4 is that lead plate shown in Figure 3 dissects the cutaway view obtained along the B-B line, and as can see from Figure 4, lead plate also comprises inner conductors 123, and inner conductors 123 is arranged in deckle board 121, and inner conductors 123 runs through deckle board 121.From Fig. 4, seeing, the first upper surface 121a is higher than the second upper surface 121b.Because deckle board 121 has the first upper surface 121a and the second upper surface 121b, therefore deckle board 121 is stairstepping in tangent plane shown in Figure 4.
As can be seen from Figure 4, except on the first upper surface 121a, being provided with passive device 126, also be provided with passive device 126 in the bottom of deckle board 121 (that is lower surface), this set has further improved the utilance of deckle board 121 space surface.
In lead plate, the material of deckle board 121 can be ceramic material, organic material, glass material or silicon materials, and lead plate can be made by the manufacture method of printed circuit board (PCB), in deckle board 121, to form the inner conductors 123 that runs through deckle board 121 thickness.The material of inner conductors 123 can be the metals such as copper, nickel, aluminium or gold, and the alloy that forms of their combination in any.In the present embodiment, inner conductors 123 can be three-decker, for example three layers of copper, nickel and gold, consists of.
Please refer to Fig. 5, first transparency carrier 124 be set on deckle board 121, the opening 122 in transparency carrier 124 coverage diagrams 4, wherein transparency carrier 124 by glue put 101 and Fig. 3 in the second upper surface 121b bonding.The present embodiment arranges transparency carrier 124 upper surfaces a little less than the first upper surface 121a, more fully protects transparency carrier 124 to utilize deckle board 121, makes transparency carrier 124 be difficult for being collided.Then the functional surfaces of image sensor chip and lead plate are fixed together, make transparency carrier 124 be positioned at pixel cell 111a top, making light can see through transparency carrier 124 is radiated on pixel cell 110a, make simultaneously an end of inner conductors 123 be electrically connected to the first electrode 111b, namely make between inner conductors 123 and pixel cell 110a and have electrical connection.
The present embodiment can be used the mode of ultrasonic bonding, Reflow Soldering welding or conductive adhesive to make an end of inner conductors 123 be electrically connected to the first electrode 111b, and aforesaid way makes lead plate be fixed on the functional surfaces 111 of image sensor chip (please refer to Fig. 1) simultaneously, be about to deckle board 121 and be fixed on the non-photosensitive region of image sensor chip.
Although do not show in Fig. 5, but transparency carrier 124 by glue put 101 be fixed on the second upper surface 121b after, still there is the space (not shown) in each glue point 101 between the second upper surface 121b, and between the sidewall (unmarked) of transparency carrier 124 and deckle board 121, there is gap (unmarked), these spaces and gap communicate, thereby make by Semiconductor substrate 112, chamber (unmarked) and exterior that deckle board 121 and transparency carrier 124 surround, finally can prevent transparency carrier 124 and cause and break because the air pressure that upper surface and lower surface are subject to is different.
Although do not show in Fig. 5, but the present embodiment can the upper surface of transparency carrier 124 and lower surface one of them arranges the optical coating (not shown) at least, described optical coating can be IR-cut (IR-cut) film or antireflection (anti-reflect, AR) film, or the lamination of infrared cut coating and anti-reflective film.Infrared cut coating can allow visible light to see through transparency carrier 124 and the cut-off infrared light, thereby makes pixel cell 111a can not be subject to unnecessary infrared ray impact.Anti-reflective film can reduce reverberation, thereby increases the light transmission capacity of transparency carrier 124.
Please continue to refer to Fig. 5, after wafer and lead plate are fixed together, continue to form the second electrode 102 on the first upper surface 121a of deckle board 121 in Fig. 4.In the present embodiment, the second electrode 102 can be projection (Bump) or pin, therefore can adopt solder reflow process or projection to form technique (bumping process) and form the second electrode 102.The material of the second electrode 102 can be the alloy that the metal such as copper, nickel, aluminium or gold and their combination in any form.The second electrode 102 is electrically connected to flexible printed circuit board or printed circuit board (PCB) for follow-up.
Please continue to refer to Fig. 5; after image sensor chip and lead plate are fixed together; protection glue 103 is set in the image sensor chip side; protection glue 103 sticks to the part bottom of framework 121 simultaneously; protection glue 103 both can the reinforced leads plate and the fixation of image sensor chip; can prevent again the structure after dust or moisture proceed to lead plate and image sensor chip and is fixed together, and prevent that external force from damaging the image sensor chip side.The material of protection glue 103 can be epoxide-resin glue.It should be noted that, protection glue 103 also can form before transparency carrier 124 is set.
Please refer to Fig. 6,125(please refer to Fig. 3 along Cutting Road) the cutting lead plate, namely with C-C chain-dotted line shown in Figure 5, cut, after cutting, obtain the image sensor package structure, as shown in Figure 6.Mechanical cutter head cutting lead plate can be adopted, also the laser cutting lead plate can be adopted.
The image sensor package method that the present embodiment provides; image sensor chip and lead plate first are provided respectively; again they are fixed together; therefore can to image sensor chip and lead plate, control separately respectively; thereby can control respectively the yield of image sensor chip and lead plate; and then can improve the packaging technology yield, be suitable for large-scale production.
The image sensor package method that the present embodiment provides is fixed on lead plate on the functional surfaces 111 of image sensor chip, and make the first electrode 111b on image sensor chip functional surfaces 111 upwards draw by the inner conductors 123 in lead plate, thereby make formed image sensor architecture directly above functional surfaces 111, arrange conduction connecting structure (for being electrically connected to of external circuit), back side deriving structure needn't be made, therefore ultra-thin image sensor package structure can be produced.
The image sensor package method that the present embodiment provides needn't form at the image sensor chip back side structures such as wire, protective layer and insulating barrier; thereby make technique simpler; and can reduce process costs, can improve the heat dispersion of formed image sensor package structure simultaneously.
In addition, than conventional images sensor package method, described method for packing does not need the techniques such as the high RIE of use cost, CVD or CMP, so process costs further reduces.The material range of choice of lead plate is wide simultaneously, and the manufacture craft range of choice is wide, so process is flexible.
The utility model embodiment bis-also provides a kind of image sensor package structure, please refer to Fig. 6, described image sensor package structure can be obtained by the described image sensor package method of embodiment mono-, therefore, the structure of image sensor package structure each several part and character can reference example one related contents, no longer explain at this.
In the resulting image sensor package structure of the present embodiment, because the yield of each several part in forming process can be controlled separately, therefore to form the image sensor package structural reliability high.The resulting image sensor package structure of the present embodiment does not need to form overleaf the structures such as wire, protective layer and insulating barrier, so the image sensor package structure has good heat dispersion.
On the original image sensor chip functional surfaces of the resulting image sensor package structure of the present embodiment utilization, 111 just need to arrange the structures such as protective substrate; do not increase on the one hand the thickness on image sensor chip functional surfaces 111; do not need to increase on the other hand the thickness at the back side; therefore; the image sensor package structure can have ultra-thin thickness; its thickness range can reach 200um～350um, and the image sensor package structural thickness that existing method is made is usually more than 500um.
The utility model embodiment tri-provides another image sensor package method, please in conjunction with Fig. 7 to Fig. 9.
Please refer to Fig. 7, the present embodiment provides lead plate, and lead plate has deckle board 221, deckle board 221 has upper surface 221a, the upper surface 221a of deckle board 221 and lower surface (unmarked) all include passive device 225, and passive device 225 can be both capacity cell, can be also resistive elements.Lead plate also has opening 222 and inner conductors 223, and opening 222 runs through deckle board 211, and inner conductors 223 also runs through deckle board 221.
Please refer to Fig. 8, the present embodiment provides image sensor chip, image sensor chip comprises pixel cell 211a, the first electrode 211b and Semiconductor substrate 212, the structure of this image sensor chip is identical with structure and the character of image sensor chip in embodiment mono-with character, the related content in can embodiment mono-.
Please continue to refer to Fig. 8, first transparency carrier 224 is set on deckle board 221, the opening 222 in transparency carrier 224 coverage diagrams 7, transparency carrier 224 can be put the 201 upper surface 221a that are adhered to deckle board 221 in Fig. 7 by glue.Then lead plate and image sensor chip are fixed together, and make inner conductors 223 be electrically connected to the first electrode 211b.
Please continue to refer to Fig. 8, after lead plate and image sensor chip are fixed together, on the upper surface 221a of deckle board 221 shown in Figure 7, form the second electrode 202, and the second electrode 202 is positioned at transparency carrier 224 outsides, the second electrode 202 can be conduction tin ball or other metal soldered ball (solder).The manufacture craft of the second electrode 202 can be printing, can be also to plant ball.In the present embodiment, make especially the top of the second electrode 202 and the flush of transparency carrier 224, help like this transparency carrier 224 subsequent external circuit to be electrically connected to.Transparency carrier 224 can arrange thinlyyer, so that the top of the second electrode 202 easily reaches and flushes with the upper surface of transparency carrier 224.The upper surface of transparency carrier 224 or lower surface one of them can arrange the optical coating (not shown) such as infrared cut coating or anti-reflective film at least, but the related content in reference example one.In addition, the side of image sensor chip can be provided with protection glue 203, and the nature and role of this protection glue 203 equally can reference example one related content.
Please, in conjunction with reference to figure 8 and Fig. 9, along the cutting of the D-D chain-dotted line in Fig. 8 structure shown in Figure 8, obtain image sensor package structure shown in Figure 9.Although in Fig. 9, do not show, the D-D chain-dotted line is corresponding with the Cutting Road (not shown) position on deckle board 221.
With embodiment mono-, compare, in the image sensor package structure provided in embodiment tri-, deckle board 221 only has a upper surface 221a, does not namely have the stepped cross-section that is similar to deckle board 121, therefore the manufacture craft of the present embodiment lead plate is simpler, and its cost of manufacture is also lower.
The utility model embodiment tetra-provides another kind of image sensor package structure, as shown in Figure 9.Described image sensor package structure can be obtained by the described image sensor package method of embodiment tri-, and therefore, in the image sensor package structure, the structure of each several part and character can reference example three related contents, no longer explain at this.
In the resulting image sensor package structure of the present embodiment, deckle board 221 only has a upper surface flushed (being formed with glue point 201 and the second electrode 202 on described upper surface), and has upper surface 121a and the second upper surface 121b unlike the deckle board 121 in embodiment mono-.Therefore, relative deckle board 121, deckle board 221 can be made thinlyyer, and in the present embodiment, transparency carrier 224 also can arrange very thinly, therefore makes the image sensor package structural thickness obtained thinner, and whole image sensor package structure heat radiation is better.
The utility model embodiment five provides another kind of image sensor package structure, as shown in figure 10.Described image sensor package structure comprises image sensor chip and lead plate.Described image sensor chip comprises pixel cell 311a, the first electrode 311b and Semiconductor substrate 312.Described lead plate comprises deckle board 321 and runs through the inner conductors 322 of deckle board 321.Deckle board 321 comprises opening (unmarked), and described opening exposes pixel cell 311a.Described lead plate also comprises transparency carrier 323, and described opening is covered by transparency carrier 323.Described image sensor chip side bonds together by protection glue 303 and the medial surface of deckle board 321.
In the present embodiment, deckle board 321 is in tangent plane shown in Figure 10, have three upper surfaces, wherein on minimum upper surface, be provided with third electrode 301, the first electrode 311b is electrically connected to third electrode 301 by wire 302, can make wire 302 be electrically connected to the first electrode 311b and third electrode 301 by wire bonds (Wire Bond) technique.On upper surface in the middle of deckle board 321, have glue point 304, glue point 304 is for being fixed on deckle board 321 by transparency carrier 323.On the highest upper surface of deckle board 321, be provided with the second electrode 305, third electrode 301 and the second electrode 305 form and are electrically connected to by inner conductors 322, thereby make the first electrode 311b form and be electrically connected to the second electrode 305, follow-up the second electrode 305 is for external circuit, forming and to be electrically connected to, thereby the first electrode 311b is electrically connected to external circuit.
The image sensor package structure that the present embodiment provides can adopt the image sensor package method that the utility model embodiment mono-provides to form.Lead plate and image sensor chip first are provided, and then lead plate and image sensor chip are fixed together.Wherein, described lead plate can have a plurality of openings, and described opening is for exposing pixel cell.Owing to having a plurality of openings, so lead plate can fix with a plurality of image sensor chips, and then cuts described lead plate, forms single image sensor package structure.The image sensor package structure that the present embodiment provides also can adopt the image sensor package method that other embodiment of the utility model provides to form, the lead plate that only has single opening for example is provided, and described lead plate and single image sensor chip are fixed together, directly form the image sensor package structure in the situation that needn't cut.
The image sensor package structure that the present embodiment provides not only has advantages of thin thickness, good heat dissipation, manufacture craft is simple and cost of manufacture is low, and it can utilize existing ripe wire bonds technique, make between two electrodes to realize being electrically connected to, therefore, can improve the conduction yield.
The utility model embodiment six provides another kind of image sensor package structure, as shown in figure 11.The image sensor package structure that the present embodiment provides comprises image sensor chip and lead plate equally.Described image sensor chip comprises pixel cell 411a, the first electrode 411b and Semiconductor substrate 412.Described lead plate comprises deckle board 421, runs through inner conductors 422 and the transparency carrier 423 of deckle board 421.Deckle board 421 has opening (unmarked), and described opening exposes pixel cell 411a, and described opening is covered by transparency carrier 423.The image sensor chip side bonds together by protection glue 403 and the medial surface of deckle board 421.
The image sensor package structure that the present embodiment provides can reference example five related content, but the image sensor package structure that the present embodiment provides exists different from the image sensor package structure that embodiment five provides.In the present embodiment, the deckle board 421 of image sensor package structure only has two upper surfaces, wherein on lower upper surface, is provided with third electrode 401, the first electrode 411b and is electrically connected to third electrode 401 by wire 402.On the higher upper surface of deckle board 421, have glue point 404 and the second electrode 405.Glue point 404 is for being fixed on deckle board 421 by transparency carrier 424.Third electrode 401 and the second electrode 405 form and are electrically connected to by inner conductors 422, thereby make the first electrode 411b form and be electrically connected to the second electrode 405, follow-up the second electrode 405 is for external circuit, forming and to be electrically connected to, thereby the first electrode 411b is electrically connected to external circuit.
In the present embodiment, the second electrode 405 is conductive weld.Concrete, the second electrode 405 can be the tin ball, can be also other Metal Ball.Simultaneously, the present embodiment arranges upper end and transparency carrier 423 upper surface flush of the second electrode 405, easily with printed circuit board (PCB) etc., is electrically connected to so that the second electrode 405 is follow-up.
The image sensor package structure that the present embodiment provides not only has advantages of thin thickness, good heat dissipation, manufacture craft is simple and cost of manufacture is low, can utilize existing ripe wire bonds technique, the first electrode 411b is connected with the second electrode 405, therefore, can improves the conduction yield.
The utility model embodiment seven provides another kind of image sensor package structure, as shown in figure 12.The image sensor package structure that the present embodiment provides comprises image sensor chip and lead plate equally.Described image sensor chip comprises pixel cell 511a, the first electrode 511b and Semiconductor substrate 512.Described lead plate comprises deckle board 521, runs through inner conductors 522 and the transparency carrier 523 of deckle board 521.The image sensor chip side bonds together by protection glue 503 and the medial surface of deckle board 521.
In the present embodiment, deckle board 521 has three upper surfaces, wherein on minimum upper surface, be provided with third electrode 501, the first electrode 511b is electrically connected to third electrode 501 by wire 502, same, can make wire 502 be electrically connected to the first electrode 511b and third electrode 501 by wire bonds technique.On upper surface in the middle of deckle board 521, have glue point 504, glue point 504 is for being fixed on deckle board 521 by transparency carrier 523.On the highest upper surface of deckle board 521, be provided with the second electrode 505, third electrode 501 and the second electrode 505 form and are electrically connected to by inner conductors 522, thereby make the first electrode 511b form and be electrically connected to the second electrode 505, follow-up the second electrode 505 is for external circuit, forming and to be electrically connected to, thereby the first electrode 511b is electrically connected to external circuit.
The image sensor package structure that the present embodiment provides can reference example five related contents, but the image sensor package structure that the present embodiment provides exists different from the image sensor package structure that embodiment five provides.In the image sensor package structure that the present embodiment provides, although deckle board 521 has opening (unmarked) equally, described opening still exposes pixel cell 511a, and described opening is still covered by transparency carrier 523, but described opening does not run through framework 521, framework 521 has the bottom corresponding with described opening (unmarked), and in the present embodiment, described bottom (unmarked) run through by many thermal conductive wires 532.And the two ends of thermal conductive wire 532 are connected with respectively conducting strip 531 and conducting strip 533.Wherein, conducting strip 531, between the bottom and Semiconductor substrate 512 of framework 521, although do not show in figure, can be provided with the glue material so that they are sticked together between conducting strip 531 and Semiconductor substrate 512.The material of thermal conductive wire 532, conducting strip 531 and thermal conductive wire 533 can be metal material.The setting of thermal conductive wire 532, conducting strip 531 and thermal conductive wire 533 is in order to make the heat that imageing sensor produces can be between them, spreading out of, thereby makes the heat conductivility of image sensor package structure better.
Although the image sensor package structure that the present embodiment provides includes the bottom of framework 521 corresponding to opening at the image sensor chip back side, make the image sensor chip back side increase certain thickness.But the thickness in described bottom own is less, therefore the thickness of whole image sensor package structure is not affected substantially, and the integral thickness of described image sensor package structure still can be less.And, by the setting of conducting strip 531, conducting strip 533 and thermal conductive wire 532, make the heat dispersion of image sensor package structure reach level preferably.
The utility model embodiment eight provides another kind of image sensor package structure, as shown in figure 13.The image sensor package structure that the present embodiment provides comprises image sensor chip and lead plate equally.Described image sensor chip comprises pixel cell 611a, the first electrode 611b and Semiconductor substrate 612.Described lead plate comprises deckle board 621, runs through inner conductors 622 and the transparency carrier 623 of deckle board 621.The image sensor chip side bonds together by protection glue 603 and the medial surface of deckle board 621.
The image sensor package structure that the present embodiment provides can reference example seven related contents, but the image sensor package structure that the present embodiment provides exists different from the image sensor package structure that embodiment seven provides.In the present embodiment, deckle board 621 only has two upper surfaces, wherein on lower upper surface, be provided with third electrode 601, the first electrode 611b and be electrically connected to third electrode 601 by wire 602, can make wire 602 be electrically connected to the first electrode 611b and third electrode 601 by wire bonds technique.On the higher upper surface of deckle board 621, have glue point 604 and the second electrode 605.Glue point 604 is for being fixed on deckle board 621 by transparency carrier 623.The second electrode 605 and third electrode 601 form and are electrically connected to by inner conductors 622, thereby make the first electrode 611b form and be electrically connected to the second electrode 605, follow-up the second electrode 605 is for external circuit, forming and to be electrically connected to, thereby the first electrode 611b is electrically connected to external circuit.
Similar with embodiment seven, in the image sensor package structure that the present embodiment provides, deckle board 621 has opening (unmarked) equally, described opening still exposes pixel cell 611a, and described opening is still covered by transparency carrier 623, described opening does not run through framework 621 equally, and namely framework 621 has bottom (unmarked).And in the present embodiment, the bottom of framework 621 is run through by many thermal conductive wires 632.And the two ends of thermal conductive wire 632 are connected with respectively conducting strip 631 and conducting strip 633.Wherein, conducting strip 631, between the bottom and Semiconductor substrate 612 of framework 621, although do not show in figure, can be provided with the glue material so that they are sticked together between conducting strip 631 and Semiconductor substrate 612.The material of thermal conductive wire 632, conducting strip 631 and thermal conductive wire 633 can be metal material.
In the present embodiment, the second electrode 605 is conductive weld.Concrete, the second electrode 605 can be the tin ball, can be also other Metal Ball.Simultaneously, the present embodiment arranges upper end and transparency carrier 623 upper surface flush of the second electrode 605, easily with printed circuit board (PCB) etc., is electrically connected to so that the second electrode 605 is follow-up.
Although the image sensor package structure that the present embodiment provides includes the bottom of framework 621 corresponding to opening at the image sensor chip back side, make the image sensor chip back side increase certain thickness.But the thickness in described bottom own is less, therefore the thickness of whole image sensor package structure is not affected substantially, and the integral thickness of described image sensor package structure still can be less.And, by the setting of conducting strip 631, conducting strip 633 and thermal conductive wire 632, make the heat dispersion of image sensor package structure reach level preferably.
The utility model embodiment nine provides a kind of imageing sensor module formation method, please refer to Figure 14 to Figure 16.
At first embodiment nine forms the image sensor package structure with the described image sensor package method of embodiment mono-, so the concrete forming process of image sensor package structure can, referring to figs. 1 to the related content in Fig. 6 and embodiment mono-, not repeat them here.It should be noted that, in the formation method of the imageing sensor module that other embodiment provides, also can adopt the image sensor package method that other embodiment of the utility model provides to form the image sensor package structure, can, with reference to the related content of corresponding embodiment, not repeat them here.
Please refer to Figure 14, on the second electrode 102 in the image sensor package structure, be electrically connected to flexible printed circuit board 130, wherein, the wire 131 in flexible printed circuit board 130 is electrically connected to realization with the second electrode 102 conductive contacts.Can be pressed together between flexible printed circuit board 130 and the second electrode 102 so that wire 131 and the second electrode 102 conductive contacts with conducting resinl, and flexible printed circuit board 130 is fixed on the image sensor package structure.
Figure 15 is the vertical view corresponding with Figure 14, that is Figure 14 is the cutaway view that structure shown in Figure 15 obtains along the E-E line.From Figure 15, seeing, flexible printed circuit board 130 also comprises flexible base, board 132 and Copper Foil 133, and flexible base, board 132 carryings are as the Copper Foil 133 of wire.It should be noted that, in Figure 15, do not demonstrate the transparency carrier 124 in Figure 14, and only demonstrate pixel cell 111a.
Please refer to Figure 16, on flexible printed circuit board 130, continue to arrange camera lens module 140.Camera lens module 140 comprises picture frame 141 and eyeglass 142.Picture frame 141 is for fixing len 142, and eyeglass 142 is for light being pooled to the pixel cell 111a of Figure 15 image sensor package structure, so that the angular range of the light that pixel cell 111a can receive increases.
After completing above-mentioned steps, the present embodiment has formed the imageing sensor module, the formation method of the imageing sensor that imageing sensor module formation method use the utility model embodiment that the present embodiment provides provides, therefore, described imageing sensor module formation method can apply to large-scale production, and it is high to have a technique yield, process is flexible, simple and the low characteristics of process costs of technique, simultaneously, the image sensor package structural thickness that the formation method of the imageing sensor provided due to the utility model embodiment forms is little, therefore the imageing sensor module thickness of finally producing is little.
The utility model embodiment ten provides a kind of imageing sensor module, please refer to Figure 16.Image sensor package structure in described imageing sensor module can be the image sensor package structure that embodiment bis-provides, therefore, the structure of image sensor package structure each several part and character can reference example two related contents, do not repeat them here.
Described imageing sensor module also comprises flexible printed circuit board 130, and the wire 131 in flexible printed circuit board 130 is connected with the second electrode 102.On flexible printed circuit board 130, be provided with camera lens module 140.Camera lens module 140 comprises picture frame 141 and eyeglass 142.Picture frame 141 is for fixing len 142, and eyeglass 142 is for light being pooled to the pixel cell 111a of Figure 15 image sensor package structure, so that the angular range of the light that pixel cell 111a can receive increases.
The imageing sensor module that the present embodiment provides is owing to having the image sensor package structure, and therefore, institute's formation imageing sensor module reliability is high, perfect heat-dissipating, and thickness is little.
The utility model embodiment 11 provides another imageing sensor module, please refer to Figure 17.Image sensor package structure in described imageing sensor module can be the image sensor package structure that embodiment bis-provides equally, therefore, the structure of image sensor package structure each several part and character can reference example two related contents, do not repeat them here.Described imageing sensor module also comprises flexible printed circuit board 130, and the wire 131 in flexible printed circuit board 130 is connected with the second electrode 102.
The imageing sensor module that the present embodiment provides is compared with the imageing sensor module that embodiment ten provides, difference is, in the present embodiment imageing sensor module, camera lens module 150 has a plurality of eyeglasses 152 that are arranged in picture frame 151, each eyeglass 152 cooperatively interacts, make the angular range of the light that the imageing sensor module can receive larger, so the spatial dimension that the imageing sensor module can sense is larger.
Although the utility model discloses as above, the utility model not is defined in this.Any those skilled in the art, within not breaking away from spirit and scope of the present utility model, all can make various changes or modifications, and therefore protection range of the present utility model should be as the criterion with the claim limited range.
Claims (14)
1. an image sensor package structure, is characterized in that, comprising:
Image sensor chip, the functional surfaces of described image sensor chip have photosensitive region and non-photosensitive region, and described photosensitive region has pixel cell, and described non-photosensitive region has the first electrode, and the side of described image sensor chip is provided with protection glue;
The lead plate be fixedly connected with described image sensor chip, described lead plate has deckle board and runs through the inner conductors of described deckle board thickness, described deckle board has opening, and described opening exposes described photosensitive region, and an end of described inner conductors is electrically connected to described the first electrode.
2. image sensor package structure as claimed in claim 1, is characterized in that, also comprises: transparency carrier, described transparency carrier are fixed on described deckle board and cover described opening.
3. image sensor package structure as claimed in claim 2, is characterized in that, described deckle board upper surface is provided with the second electrode, and the other end of described inner conductors is electrically connected to described the second electrode.
4. image sensor package structure as claimed in claim 3, is characterized in that, described deckle board comprises the first upper surface and the second upper surface, and described the first upper surface is higher than described the second upper surface; Described the second electrode is positioned at described the first upper surface; Described transparency carrier is fixed on described the second upper surface, and the upper surface of described transparency carrier is lower than described the first upper surface.
5. image sensor package structure as claimed in claim 3, is characterized in that, described the second electrode is conductive weld, the upper surface flush of its top and described transparency carrier.
6. image sensor package structure as claimed in claim 2, is characterized in that, the upper surface of described transparency carrier and lower surface one of them has optical coating at least.
7. image sensor package structure as claimed in claim 6, is characterized in that, described optical coating comprises infrared cut coating or anti-reflective film.
8. image sensor package structure as claimed in claim 1, is characterized in that, described inner conductors is electrically connected to the mode of described the first electrode by welding or conductive adhesive.
9. image sensor package structure as claimed in claim 1, is characterized in that, described deckle board is provided with passive device.
10. image sensor package structure as claimed in claim 1, is characterized in that, the material of described deckle board comprises ceramic material, organic material, glass material or silicon materials.
11. image sensor package structure as claimed in claim 2, is characterized in that, the medial surface of described deckle board and the side of described image sensor chip are bonding, by metal wire, are electrically connected between an end of described inner conductors and described the first electrode.
12. image sensor package structure as claimed in claim 2, is characterized in that, the inner surface of described deckle board and the side of described image sensor chip and bottom are bonding, by metal wire, are electrically connected between an end of described inner conductors and described the first electrode.
13. image sensor package structure as claimed in claim 12, it is characterized in that, the bottom of described deckle board is run through by many thermal conductive wires, the two ends of described thermal conductive wire are connected with respectively conducting strip, and the described conducting strip that is positioned at described deckle board inner surface is bonding by the back side of glue material and described image sensor chip.
14. an imageing sensor module, is characterized in that, comprising:
Image sensor package structure as described as claim 1 to 13 any one, described inner conductors is electrically connected to printed circuit board (PCB), on described printed circuit board (PCB), is provided with the camera lens module.
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| CN2013203127772U CN203312298U (en) | 2013-05-31 | 2013-05-31 | Image sensor packaging structure and image sensor module |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103325803A (en) * | 2013-05-31 | 2013-09-25 | 格科微电子（上海）有限公司 | Method and structure of image sensor packaging and image sensor module and forming method of image sensor module |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103325803A (en) * | 2013-05-31 | 2013-09-25 | 格科微电子（上海）有限公司 | Method and structure of image sensor packaging and image sensor module and forming method of image sensor module |
| CN103325803B (en) * | 2013-05-31 | 2016-01-27 | 格科微电子（上海）有限公司 | Image sensor package method and structure, imageing sensor module and formation method |
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