CN203301394U - Nanosecond type high-voltage pulse generator output circuit - Google Patents
Nanosecond type high-voltage pulse generator output circuit Download PDFInfo
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- CN203301394U CN203301394U CN2013202885265U CN201320288526U CN203301394U CN 203301394 U CN203301394 U CN 203301394U CN 2013202885265 U CN2013202885265 U CN 2013202885265U CN 201320288526 U CN201320288526 U CN 201320288526U CN 203301394 U CN203301394 U CN 203301394U
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Abstract
The utility model discloses a nanosecond type high-voltage pulse generator output circuit. The circuit comprises a pulse excitation power supply, wherein the output end cathode of the pulse excitation power supply is ground, the output end anode is ground by a first capacitor and a SOS diode which are sequentially and serially connected, the connection point of the first capacitor and the SOS diode is connected with an input end of a reactor by an inductor, and the other end of the reactor is ground. The nanosecond type high-voltage pulse generator output circuit allows the reactor to obtain the nanosecond type pulse voltage wit higher amplitude value, and simultaneously prevents the voltage of the capacitor of the reactor from being discharged by the SOS diode, thereby reducing the heat amount and energy loss.
Description
Technical field
The utility model relates to the nanosecond pulse circuit for generating for the treatment of pollutant, relates in particular to a kind of nanosecond high-voltage pulse generator output loop.
Background technology
The high-voltage nanosecond pulse electric discharge is to produce one of mode of low-temperature plasma jet, the nanosecond pulse discharge technology is because of advantages such as its plasma jet that produces has evenly, stablizes, active particle concentration height, and become rapidly the study hotspot in plasma application field, so, by technological means such as nanosecond pulse discharge process pollutants, moving towards practical.
In the application of this technology, relate to the nanosecond pulse high voltage source, existing nanosecond pulse high voltage source adopts the gap discharge structure more, because gap discharge is unstable, and the electrode erosion that produces during due to long-term work, so be difficult to realize practical always; Development abroad goes out a kind of employing semiconductor open switch (semiconductor opening switch, SOS) high-voltage nanosecond level power supply structure at present, and this structure utilizes the reverse recovery voltage characteristic of SOS diode to produce nanosecond pulse output.But in actual applications, between the electrode of discharging plasma reactor, there is capacity effect (reaching several thousand P methods), so, when the nanosecond pulse high voltage source that adopts the SOS topological structure is connected to reactor, just be equivalent on the SOS diode a larger electric capacity in parallel, this capacitive absorption the reverse recovery voltage of part of SOS diode, make reactor be difficult to obtain the nanosecond pulse voltage that amplitude is higher.On the other hand, this reactor electric capacity meeting accumulated voltage, when this voltage during lower than the reactor gap discharge voltage, this voltage is twice interpulse remaining unchanged, but when the SOS diode current flow, the voltage of reactor electric capacity can discharge by the SOS diode current flow, this process has increased the heating of SOS diode current flow on the one hand, has also lost on the other hand energy.
The utility model content
The technical problems to be solved in the utility model is, a kind of nanosecond high-voltage pulse generator output loop is provided, by this output loop, can make reactor obtain the nanosecond pulse voltage that amplitude is higher, also avoid simultaneously the voltage of reactor electric capacity to release by the SOS diode, thereby reduced the generation of heat and the loss of energy.
For solving the problems of the technologies described above, the utility model adopts following technical scheme.
A kind of nanosecond high-voltage pulse generator output loop, it includes a pulse excitation power supply, the negative pole of output end ground connection of described pulse excitation power supply, its output head anode is by the first electric capacity and the SOS diode ground connection of series connection successively, the tie point of described the first electric capacity and SOS diode is connected to an input of reactor, another input end grounding of this reactor by an inductor.
Preferably, the minus earth of described SOS diode, its anode is connected with the first electric capacity, between the tie point of described the first electric capacity and SOS diode and described inductor, is provided with a silicon stack, the anode of described silicon stack is connected with inductor, and its negative electrode is connected with the anode of SOS diode.
Preferably, the minus earth of described SOS diode, its anode is connected with the first electric capacity.
Preferably, the plus earth of described SOS diode, its negative electrode is connected with the first electric capacity, between the tie point of described the first electric capacity and SOS diode and described inductor, is provided with a silicon stack, the negative electrode of described silicon stack is connected with inductor, and its anode is connected with the negative electrode of SOS diode.
Preferably, the plus earth of described SOS diode, its negative electrode is connected with the first electric capacity.
Preferably, the pulsactor Ls of described inductor and initial inductance Lc meet: Ls<<Lc.
Preferably, described SOS diode is fast quick-recovery type high voltage silicon stack.
in the disclosed nanosecond high-voltage pulse generator of the utility model output loop, between two inputs due to reactor, there is reactor electric capacity, so inductor is connected with an end of this reactor electric capacity, the voltage-drop loading of exporting when the pulse excitation power supply is during in the first electric capacity, this first capacitor charging, when the transformer of pulse excitation power supply reaches capacity, the SOS diode is in the reverse recovery stage, the tie point of this first electric capacity and SOS diode produces the nanosecond high pressure, after inductor is saturated, this nanosecond high-voltage high-speed is transferred on reactor, thereby the absorption of reactor electric capacity to this nanosecond high pressure while having avoided the SOS diode reverse recovery, make reactor can access the nanosecond pulse voltage that amplitude is higher.Simultaneously, under the effect of inductor, also avoided the voltage of reactor electric capacity to release by this SOS diode, thereby reduced the generation of heat and the loss of energy.
The accompanying drawing explanation
Fig. 1 is the circuit theory diagrams of the utility model the first embodiment.
Fig. 2 is the circuit theory diagrams of the utility model the second embodiment.
Fig. 3 is the circuit theory diagrams of the utility model the 3rd embodiment.
Fig. 4 is the circuit theory diagrams of the utility model the 4th embodiment.
Embodiment
Below in conjunction with drawings and Examples, the utility model is described in more detail.
The utility model proposes a kind of nanosecond high-voltage pulse generator output loop, it includes a pulse excitation power supply, the negative pole of output end ground connection of described pulse excitation power supply, its output head anode is by the first electric capacity and the SOS diode ground connection of series connection successively, the tie point of described the first electric capacity and SOS diode is connected to an input of reactor, another input end grounding of this reactor by an inductor.in above-mentioned output loop, between two inputs due to reactor, there is reactor electric capacity, so inductor is connected with an end of this reactor electric capacity, the voltage-drop loading of exporting when the pulse excitation power supply is during in the first electric capacity, this first capacitor charging, when the transformer of pulse excitation power supply reaches capacity, the SOS diode is in the reverse recovery stage, the tie point of this first electric capacity and SOS diode produces the nanosecond high pressure, after inductor is saturated, this nanosecond high-voltage high-speed is transferred on reactor, thereby the absorption of reactor electric capacity to this nanosecond high pressure while having avoided the SOS diode reverse recovery, make reactor can access the nanosecond pulse voltage that amplitude is higher.Simultaneously, under the effect of inductor, also avoided the voltage of reactor electric capacity to release by this SOS diode, thereby reduced the generation of heat and the loss of energy.
In order to set forth better the technical solution of the utility model, following embodiment is proposed now.
Embodiment 1:
The present embodiment has proposed a kind of circuit structure when pulse excitation power supply output forward voltage, as shown in Figure 1, described nanosecond high-voltage pulse generator output loop includes a pulse excitation power supply 1, the negative pole of output end ground connection of described pulse excitation power supply 1, its output head anode is by the first electric capacity 2 and SOS diode 3 ground connection of series connection successively, the tie point of described the first electric capacity 2 and SOS diode 3 is connected to an input of reactor 6, another input end grounding of this reactor 6 by an inductor 5.
Wherein, the minus earth of described SOS diode 3, its anode is connected with the first electric capacity 2, between the tie point of described the first electric capacity 2 and SOS diode 3 and described inductor 5, is provided with a silicon stack 4, the anode of described silicon stack 4 is connected with inductor 5, and its negative electrode is connected with the anode of SOS diode 3.The pulsactor Ls of described inductor 5 is much smaller than initial inductance Lc, and described SOS diode 3 is fast quick-recovery type high voltage silicon stack.
the operation principle of foregoing circuit is: when pulse excitation power supply 1 forward voltage arrives, 3 conductings of SOS diode, the first electric capacity 2 chargings, silicon stack 4 is in the back-pressure cut-off state, after the output transformer of pulse excitation power supply 1 is saturated, SOS diode 3 is in the reverse recovery stage, at this moment, the first electric capacity 2, the transformer of pulse excitation power supply 1, reactor electric capacity 7, inductor 5 and silicon stack 4 form loop, the nanosecond negative high voltage appears in the anode at SOS diode 3, and silicon stack 4 conductings, due to the pulsactor Ls of inductor 5 much smaller than initial inductance Lc, make reactor electric capacity 7 have little time to absorb the nanosecond negative high voltage that SOS diode 3 anodes occur, after inductor 5 is saturated, the nanosecond negative high voltage that SOS diode 3 anodes occur by silicon stack 4 and inductor 5 and fast transport to reactor 6, make reactor 6 obtain this nanosecond high pressure, simultaneously, 7 chargings of reactor electric capacity, when the nanosecond high pressure that obtains when reactor 7 reaches its gap discharge voltage, this reactor 7 is delivered energy by electric discharge.When the nanosecond high-voltage pulse disappears, the voltage drop of reactor electric capacity 7, and while dropping to less corona current, maintain the electrical property state that is similar to negative DC voltage, when the pulse excitation power supply is exported next forward voltage pulse, SOS diode 3 forward conductions, and its anode is in electronegative potential, silicon stack 4 is in the negative pressure cut-off state, make the negative DC voltage that reactor electric capacity 7 keeps can not release by the forward conduction of SOS diode 3, wherein, the peak value of the reverse withstand voltage of SOS diode 3 direct voltage that need keep greater than reactor electric capacity 7.
Embodiment 2:
The present embodiment has proposed the another kind of circuit structure when pulse excitation power supply output forward voltage, as shown in Figure 2, described nanosecond high-voltage pulse generator output loop includes a pulse excitation power supply 1, the negative pole of output end ground connection of described pulse excitation power supply 1, its output head anode is by the first electric capacity 8 and SOS diode 9 ground connection of series connection successively, the tie point of described the first electric capacity 8 and SOS diode 9 is connected to an input of reactor 11, another input end grounding of this reactor 11 by an inductor 10.Wherein, the minus earth of described SOS diode 9, its anode is connected with the first electric capacity 8, and the pulsactor Ls of described inductor 10 is much smaller than initial inductance Lc, and described SOS diode 9 is fast quick-recovery type high voltage silicon stack.
the operation principle of this circuit is: when the forward voltage of pulse excitation power supply 1 arrives, 9 conductings of SOS diode, the first electric capacity 8 chargings, after the output transformer of pulse excitation power supply 1 is saturated, SOS diode 9 is in the reverse recovery stage, at this moment, the first electric capacity 8, the transformer of pulse excitation power supply 1, reactor electric capacity 12 and inductor 10 form loop, the nanosecond negative high voltage appears in the anode at SOS diode 9, due to the pulsactor Ls of inductor 10 much smaller than initial inductance Lc, make reactor electric capacity 12 have little time to absorb the nanosecond negative high voltage that SOS diode 9 anodes occur, after inductor 10 is saturated, the nanosecond negative high voltage that SOS diode 9 anodes occur by inductor 10 and fast transport to reactor 11, make reactor 11 obtain this nanosecond high pressure, simultaneously, 12 chargings of reactor electric capacity, when the nanosecond high pressure that obtains when reactor 11 reaches its gap discharge voltage, this reactor 11 is delivered energy by electric discharge.when the nanosecond high-voltage pulse disappears, the voltage drop of reactor electric capacity 12, and while dropping to less corona current, maintain the electrical property state that is similar to negative DC voltage, when the pulse excitation power supply is exported next forward voltage pulse, SOS diode 9 forward conductions, and its anode is in electronegative potential, because inductor 10 has larger initial inductance Lc, make the negative DC voltage that reactor electric capacity 12 keeps can not release fast because of the forward conduction of SOS diode 9, wherein, the peak value of the direct voltage that the reverse withstand voltage of SOS diode 9 need keep greater than reactor electric capacity 12.
Embodiment 3:
The present embodiment has proposed a kind of circuit structure when pulse excitation power supply output reverse voltage, as shown in Figure 3, described nanosecond high-voltage pulse generator output loop includes a pulse excitation power supply 13, the negative pole of output end ground connection of described pulse excitation power supply 13, its output head anode is by the first electric capacity 14 and SOS diode 15 ground connection of series connection successively, the tie point of described the first electric capacity 14 and SOS diode 15 is connected to an input of reactor 18, another input end grounding of this reactor 18 by an inductor 17.
Wherein, the plus earth of described SOS diode 15, its negative electrode is connected with the first electric capacity 14, between the tie point of described the first electric capacity 14 and SOS diode 15 and described inductor 17, be provided with a silicon stack 16, the negative electrode of described silicon stack 16 is connected with inductor 17, and its anode is connected with the negative electrode of SOS diode 15.The pulsactor Ls of described inductor 17 is much smaller than initial inductance Lc, and described SOS diode 15 is fast quick-recovery type high voltage silicon stack.
The difference of the present embodiment and embodiment 1 is, according to the direction of the output voltage of pulse excitation power supply 13, by 15 reversal connections of SOS diode, simultaneously by silicon stack 16 reversal connections.its operation principle is: when the reverse voltage of pulse excitation power supply 13 outputs arrives, 15 conductings of SOS diode, the first electric capacity 14 chargings, silicon stack 16 is in the back-pressure cut-off state, after the output transformer of pulse excitation power supply 13 is saturated, SOS diode 15 is in the reverse recovery stage, at this moment, the first electric capacity 14, silicon stack 16, inductor 17, the transformer of reactor electric capacity 19 and pulse excitation power supply 1 forms loop, make the negative electrode of SOS diode 15 the nanosecond positive high voltage occur, due to the pulsactor Ls of inductor 17 much smaller than initial inductance Lc, make reactor electric capacity 19 have little time to absorb the nanosecond positive high voltage that SOS diode 15 negative electrodes occur, after inductor 17 is saturated, the nanosecond positive high voltage that SOS diode 15 negative electrodes occur by silicon stack 16 and inductor 17 and fast transport to reactor 18, make reactor 18 obtain this nanosecond high pressure, simultaneously, 19 chargings of reactor electric capacity, when the nanosecond high pressure that obtains when reactor 18 reaches its gap discharge voltage, this reactor 18 is delivered energy by electric discharge.When the nanosecond high-voltage pulse disappears, the voltage drop of reactor electric capacity 19, and while dropping to less corona current, maintain the electrical property state that is similar to negative DC voltage, when the pulse excitation power supply is exported next reverse voltage pulse, SOS diode 15 forward conductions, silicon stack 16 is in cut-off state, make the negative DC voltage that reactor electric capacity 19 keeps can not release because of the forward conduction of SOS diode 15, wherein, the peak value of the reverse withstand voltage of SOS diode 15 direct voltage that need keep greater than reactor electric capacity 19.
Embodiment 4:
The present embodiment has proposed the another kind of circuit structure when pulse excitation power supply output reverse voltage, as shown in Figure 4, described nanosecond high-voltage pulse generator output loop includes a pulse excitation power supply 13, the negative pole of output end ground connection of described pulse excitation power supply 13, its output head anode is by the first electric capacity 20 and SOS diode 21 ground connection of series connection successively, the tie point of described the first electric capacity 20 and SOS diode 21 is connected to an input of reactor 23, another input end grounding of this reactor 23 by an inductor 22.Wherein, the plus earth of described SOS diode 21, its negative electrode is connected with the first electric capacity 20, and the pulsactor Ls of described inductor 22 is much smaller than initial inductance Lc, and described SOS diode 21 is fast quick-recovery type high voltage silicon stack.
The difference of the present embodiment and embodiment 2 is, according to the direction of the output voltage of pulse excitation power supply 13, by 21 reversal connections of SOS diode.its operation principle is: when the reverse voltage of pulse excitation power supply 13 arrives, 21 conductings of SOS diode, the first electric capacity 20 chargings, after the output transformer of pulse excitation power supply 13 is saturated, SOS diode 21 is in the reverse recovery stage, at this moment, the first electric capacity 20, inductor 22, the transformer of reactor electric capacity 24 and pulse excitation power supply 13 forms loop, the nanosecond positive high voltage appears in the negative electrode at SOS diode 21, due to the pulsactor Ls of inductor 22 much smaller than initial inductance Lc, make reactor electric capacity 24 have little time to absorb the nanosecond negative high voltage that SOS diode 21 negative electrodes occur, after inductor 22 is saturated, the nanosecond positive high voltage that SOS diode 21 negative electrodes occur by inductor 22 and fast transport to reactor 23, make reactor 23 obtain this nanosecond high pressure, simultaneously, 24 chargings of reactor electric capacity, when the nanosecond high pressure that obtains when reactor 23 reaches its gap discharge voltage, this reactor 23 is delivered energy by electric discharge.when the nanosecond high-voltage pulse disappears, the voltage drop of reactor electric capacity 24, and while dropping to less corona current, maintain the electrical property state that is similar to negative DC voltage, when the pulse excitation power supply is exported next forward voltage pulse, SOS diode 21 forward conductions, and its negative electrode is in electronegative potential, because inductor 22 has larger initial inductance Lc, make the negative DC voltage that reactor electric capacity 24 keeps can not release fast because of the forward conduction of SOS diode 24, wherein, the peak value of the direct voltage that the reverse withstand voltage of SOS diode 21 need keep greater than reactor electric capacity 24.
in the disclosed nanosecond high-voltage pulse generator of the utility model output loop, between two inputs due to reactor, there is reactor electric capacity, so inductor is connected with an end of this reactor electric capacity, the voltage-drop loading of exporting when the pulse excitation power supply is during in the first electric capacity, this first capacitor charging, when the transformer of pulse excitation power supply reaches capacity, the SOS diode is in the reverse recovery stage, the tie point of this first electric capacity and SOS diode produces the nanosecond high pressure, after inductor is saturated, this nanosecond high-voltage high-speed is transferred on reactor, thereby the absorption of reactor electric capacity to this nanosecond high pressure while having avoided the SOS diode reverse recovery, make reactor can access the nanosecond pulse voltage that amplitude is higher.Simultaneously, under the effect of inductor, also avoided the voltage of reactor electric capacity to release by this SOS diode, thereby reduced the generation of heat and the loss of energy.
The above is the utility model preferred embodiment, is not limited to the utility model, all modifications of making in technical scope of the present utility model, is equal to and replaces or improvement etc., all should be included in the scope that the utility model protects.
Claims (7)
1. nanosecond high-voltage pulse generator output loop, it is characterized in that, include a pulse excitation power supply, the negative pole of output end ground connection of described pulse excitation power supply, its output head anode is by the first electric capacity and the SOS diode ground connection of series connection successively, the tie point of described the first electric capacity and SOS diode is connected to an input of reactor, another input end grounding of this reactor by an inductor.
2. nanosecond high-voltage pulse generator output loop as claimed in claim 1, it is characterized in that, the minus earth of described SOS diode, its anode is connected with the first electric capacity, between the tie point of described the first electric capacity and SOS diode and described inductor, be provided with a silicon stack, the anode of described silicon stack is connected with inductor, and its negative electrode is connected with the anode of SOS diode.
3. nanosecond high-voltage pulse generator output loop as claimed in claim 1, is characterized in that, the minus earth of described SOS diode, and its anode is connected with the first electric capacity.
4. nanosecond high-voltage pulse generator output loop as claimed in claim 1, it is characterized in that, the plus earth of described SOS diode, its negative electrode is connected with the first electric capacity, between the tie point of described the first electric capacity and SOS diode and described inductor, be provided with a silicon stack, the negative electrode of described silicon stack is connected with inductor, and its anode is connected with the negative electrode of SOS diode.
5. nanosecond high-voltage pulse generator output loop as claimed in claim 1, is characterized in that, the plus earth of described SOS diode, and its negative electrode is connected with the first electric capacity.
6. described nanosecond high-voltage pulse generator output loop as arbitrary as claim 1 to 5, is characterized in that, the pulsactor Ls of described inductor and initial inductance Lc meet: Ls<<Lc.
7. described nanosecond high-voltage pulse generator output loop as arbitrary as claim 1 to 5, is characterized in that, described SOS diode is fast quick-recovery type high voltage silicon stack.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2013202885265U CN203301394U (en) | 2013-05-23 | 2013-05-23 | Nanosecond type high-voltage pulse generator output circuit |
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| CN2013202885265U CN203301394U (en) | 2013-05-23 | 2013-05-23 | Nanosecond type high-voltage pulse generator output circuit |
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| CN203301394U true CN203301394U (en) | 2013-11-20 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113508443A (en) * | 2019-02-15 | 2021-10-15 | 国家科学研究中心 | Method for generating a pulsed magnetic field and associated device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113508443A (en) * | 2019-02-15 | 2021-10-15 | 国家科学研究中心 | Method for generating a pulsed magnetic field and associated device |
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Granted publication date: 20131120 |