CN203259470U - Monolithic integrated miniature infrared gas sensor - Google Patents

Monolithic integrated miniature infrared gas sensor Download PDF

Info

Publication number
CN203259470U
CN203259470U CN 201320269323 CN201320269323U CN203259470U CN 203259470 U CN203259470 U CN 203259470U CN 201320269323 CN201320269323 CN 201320269323 CN 201320269323 U CN201320269323 U CN 201320269323U CN 203259470 U CN203259470 U CN 203259470U
Authority
CN
China
Prior art keywords
infrared
upper substrate
infrared light
gas sensor
lower substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN 201320269323
Other languages
Chinese (zh)
Inventor
谭振新
秦毅恒
张昕
明安杰
欧文
吴健
赵敏
罗九斌
顾强
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiangsu IoT Research and Development Center
Original Assignee
Jiangsu IoT Research and Development Center
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiangsu IoT Research and Development Center filed Critical Jiangsu IoT Research and Development Center
Priority to CN 201320269323 priority Critical patent/CN203259470U/en
Application granted granted Critical
Publication of CN203259470U publication Critical patent/CN203259470U/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Landscapes

  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

The utility model provides a miniature infrared gas sensor of monolithic integrated form, include: the upper substrate with the pits and the lower substrate with the pits are combined together, and a hollow air chamber is formed in the middle; an infrared light source is arranged at the concave position of the upper substrate concave pit, the side wall of the upper substrate concave pit is provided with opposite inclined planes, and a reflecting micro mirror is arranged on the opposite inclined planes; one or more grating structures and infrared detectors with the same number as the grating structures are distributed in the concave parts of the lower substrate pits; the position of the infrared light source on the upper substrate, the position of the grating structure on the lower substrate and the distribution position of the infrared detector are matched with the position and the inclination angle of the reflecting micromirror on the inclined plane of the pit of the upper substrate, so that infrared light emitted by the infrared light source is split by the grating structure, narrow-band infrared light in a wave band corresponding to the characteristic infrared absorption peak of the gas to be detected is emitted to the reflecting micromirror, and is reflected by the reflecting micromirror and then is accurately emitted to the infrared detector.

Description

单片集成式微型红外气体传感器Monolithic integrated miniature infrared gas sensor

技术领域 technical field

本实用新型涉及一种传感器,尤其是一种红外气体传感器。 The utility model relates to a sensor, in particular to an infrared gas sensor.

背景技术 Background technique

随着工业化进程的加快和物联网产业的发展,智能环境监测系统的开发成为当前研究热点之一,而气体探测器作为该系统的核心部分,因此,研制高性能、高集成度的气体探测器则成为当前的重中之重。关于模块化集成的气体探测器,一些研究机构早就做了相关的研究,并制造出样机雏形,比如:2008年,中北大学设计了一种吸收光谱型气体红外传感器,并提出了一种器件级的集成化设计方案。采用MEMS工艺将红外双路敏感元件及滤光片制作成探测头,然后通过微封装和微小集成技术将探测头、红外光源、过滤网集成在气室内。英国Cranfield University大学将红外热辐射源、窄带滤波片、热释电传感器集成在圆柱形管壳中,并对管壳壁进行特殊光学设计及处理,使更多的红外辐射到达红外探测器的窗口,极大的提高了器件的灵敏度(高达3500V/W),制作了低成本且高效率的二氧化碳NDIR传感器。上述两种方案仅局限于器件的模块化集成,未真正解决模块组装过程中所带来的各种误差,甚至器件的失效问题,因此,无法实现高可靠性和微型化的气体检测微传感结构。 With the acceleration of industrialization and the development of the Internet of Things industry, the development of intelligent environmental monitoring systems has become one of the current research hotspots, and gas detectors are the core part of the system. Therefore, it is necessary to develop high-performance and highly integrated gas detectors. become the current top priority. Regarding modular integrated gas detectors, some research institutions have done related research and produced prototype prototypes. For example, in 2008, North University of China designed an absorption spectrum gas infrared sensor and proposed a Device-level integrated design solutions. The infrared dual-path sensitive element and filter are made into a detector head by using MEMS technology, and then the detector head, infrared light source and filter are integrated in the air chamber through micro-encapsulation and micro-integration technology. Cranfield University in the United Kingdom integrates infrared thermal radiation source, narrow-band filter, and pyroelectric sensor into a cylindrical shell, and performs special optical design and treatment on the shell wall to allow more infrared radiation to reach the window of the infrared detector , which greatly improved the sensitivity of the device (up to 3500V/W), and produced a low-cost and high-efficiency carbon dioxide NDIR sensor. The above two solutions are limited to the modular integration of devices, and do not really solve the various errors caused by the module assembly process, or even the failure of devices. Therefore, it is impossible to achieve high reliability and miniaturization of gas detection micro-sensing structure.

随着技术的进一步革新,这些独立的器件甚至被集成到了同一衬底上,使得器件体积很小,集成度更高。在《MEMS技术用于红外器件制作》一文中,JPL实验室曾成功研制出微机械电子隧道红外探测器。该探测器采用MEMS(微机电系统)技术实现传统盒式气动红外探测原理,并制作隧道检测结构取代原有的复杂光学检测结构,在硅片上用微机械方法加工出气室微腔。通过检测由于红外吸收作用导致的薄膜形变,来实现红外辐射的测量。该方法实现了微机械电子隧道式探测器和气室光路的集成化设计,为集成化、微型化的气体检测装置的研究奠定了一定的基础。武汉国家光电子实验室成功地将热辐射红外光源和探测结构集成在同一衬底上,并利用管壳气室制成了红外CO2传感器。该传感器的缺点在于仅能够用于探测CO2气体,如需探测其它多种气体,还需使用其它传感器系统,因此,集成度比较差。虽然在红外探测器和气室结构、红外光源与探测器等方面实现了集成化,但是截至目前为止,还未见红外探测器、红外光源、微镜等多种MEMS结构集成到单一芯片上的高度集成化的微型气体传感器有所报道。因此,研究和开发该类集成化微纳结构应用前景十分可观。 With the further innovation of technology, these independent devices are even integrated on the same substrate, making the device smaller in size and higher in integration. In the article "MEMS technology used in the manufacture of infrared devices", JPL laboratory has successfully developed a micro-mechanical electronic tunnel infrared detector. The detector adopts MEMS (micro-electromechanical system) technology to realize the traditional box-type pneumatic infrared detection principle, and makes a tunnel detection structure to replace the original complex optical detection structure, and processes the gas chamber microcavity on the silicon chip with micro-mechanical methods. Infrared radiation is measured by detecting the deformation of the film due to infrared absorption. The method realizes the integrated design of the MEMS tunnel detector and the gas chamber optical path, and lays a certain foundation for the research of integrated and miniaturized gas detection devices. The Wuhan National Optoelectronics Laboratory successfully integrated the thermal radiation infrared light source and the detection structure on the same substrate, and made an infrared CO2 sensor using the tube-shell gas chamber. The disadvantage of this sensor is that it can only be used to detect CO2 gas, and other sensor systems need to be used to detect other gases, so the integration level is relatively poor. Although the integration of infrared detectors and gas chamber structures, infrared light sources and detectors has been achieved, up to now, there has not been a high degree of integration of infrared detectors, infrared light sources, micromirrors and other MEMS structures into a single chip. Integrated miniature gas sensors have been reported. Therefore, the application prospect of researching and developing this kind of integrated micro-nano structure is very promising.

发明内容 Contents of the invention

本实用新型的目的主要是突破传统的模块化的组合、拼凑方式,开发高度集成化的微型红外气体传感器,该传感器主要是将红外光源、微镜、光栅、红外探测器进行单片集成,通过设置红外探测器阵列和光栅结构阵列,能够实现多组分气体检测。本实用新型采用的技术方案是: The purpose of this utility model is mainly to break through the traditional modular combination and patchwork, and develop a highly integrated miniature infrared gas sensor. An infrared detector array and a grating structure array are set to realize multi-component gas detection. The technical scheme that the utility model adopts is:

一种单片集成式微型红外气体传感器,包括: A monolithic integrated miniature infrared gas sensor comprising:

具有凹坑的上衬底和具有凹坑的下衬底,以及位于上衬底和下衬底之间的键合假片,上衬底、下衬底以及键合假片结合在一起,中间形成中空的气室; An upper substrate with pits, a lower substrate with pits, and a bonding dummy located between the upper substrate and the lower substrate, the upper substrate, the lower substrate, and the bonding dummy are combined together, and the middle form a hollow air chamber;

上衬底凹坑的凹陷处设置有红外光源,上衬底凹坑的侧壁具有相对的斜面,在相对的斜面上设置有反射微镜;红外光源电连接上衬底外表的电极; An infrared light source is arranged in the recess of the pit on the upper substrate, the side walls of the pit on the upper substrate have opposite slopes, and reflective micromirrors are arranged on the opposite slopes; the infrared light source is electrically connected to the electrodes on the surface of the upper substrate;

下衬底凹坑的凹陷处分布有一个或多个光栅结构,以及与光栅结构数量相一致的红外探测器;红外探测器电连接下衬底外表的电极; One or more grating structures are distributed in the depressions of the lower substrate, and infrared detectors corresponding to the number of grating structures; the infrared detectors are electrically connected to the electrodes on the outer surface of the lower substrate;

上衬底上红外光源的位置、下衬底上光栅结构、红外探测器分布的位置与上衬底凹坑斜面上反射微镜的位置及倾斜角度相配合,使得红外光源发出的红外光经过光栅结构分光后,与被测气体特征红外吸收峰对应波段的窄带红外光射向反射微镜,并经反射微镜反射后准确入射至红外探测器; The position of the infrared light source on the upper substrate, the grating structure on the lower substrate, and the distribution position of the infrared detector are matched with the position and inclination angle of the reflective micromirror on the pit slope of the upper substrate, so that the infrared light emitted by the infrared light source passes through the grating After structural spectroscopic analysis, the narrow-band infrared light corresponding to the characteristic infrared absorption peak of the measured gas is directed to the reflective micromirror, and is accurately incident on the infrared detector after being reflected by the reflective micromirror;

在上衬底、下衬底或键合假片上开有与外界交换气体的通气孔。 Vent holes for exchanging gas with the outside are opened on the upper substrate, the lower substrate or the bonding dummy.

进一步地,所述红外光源通过TSV通孔与上衬底外表的电极电连接。 Further, the infrared light source is electrically connected to the electrodes on the outer surface of the upper substrate through the TSV through hole.

进一步地,所述红外探测器通过TSV通孔与下衬底外表的电极电连接。 Further, the infrared detector is electrically connected to the electrode on the outer surface of the lower substrate through the TSV through hole.

进一步地,所述红外光源采用真空封装。 Further, the infrared light source is packaged in vacuum.

进一步地,所述红外探测器采用真空封装。 Further, the infrared detector is packaged in vacuum.

进一步地,上衬底的凹坑呈四棱台形状。 Further, the pits of the upper substrate are in the shape of a rectangular truss.

进一步地,键合假片为单层或多层材料组成,键合假片的材料包括硅、氧化硅、氮化硅。 Further, the bonding dummy is composed of single-layer or multi-layer materials, and the materials of the bonding dummy include silicon, silicon oxide, and silicon nitride.

进一步地,所述红外光源和反射微镜均采用MEMS工艺加工制作而成。 Further, both the infrared light source and the reflective micromirror are manufactured by MEMS technology.

进一步地,所述红外探测器和光栅结构均采用MEMS工艺加工制作而成。 Further, both the infrared detector and the grating structure are manufactured by MEMS technology.

进一步地,上衬底、下衬底以及键合假片通过键合技术键合在一起。 Further, the upper substrate, the lower substrate and the bonding dummy are bonded together by bonding technology.

本实用新型的原理是,被测气体对于特定波长的红外光具有的较强吸收作用,而随着被测气体浓度的不同,到达红外探测器的红外光强度也会变化,红外探测器输出的电学信号发生变化,根据电学信号的变化,从而可测得被测气体的浓度。光栅结构的作用是代替传统的滤光片,利用光栅分光技术,通过设计合理的光栅间距和宽度、深度,使得红外光源发出的宽波段的红外光变成窄带窗口光源,这样使得与被测气体特征红外吸收峰对应波段的窄带红外光才射向对应的反射微镜。反射微镜是为了增加红外线的光程而设计的,可以使被测气体对红外光的吸收比较充分。键合假片可以使气室具有合适的高度,从而也可以调整气体吸收的光程。红外光源的位置、下衬底上光栅结构和红外探测器分布的位置与反射微镜的位置及倾斜角度要精确控制,相互配合,以保证红外光源发出的红外光经过光栅结构分光后,再经过反射微镜的多次反射后正好入射到红外探测器的红外吸收区。 The principle of the utility model is that the measured gas has a strong absorption effect on infrared light of a specific wavelength, and with the difference in the concentration of the measured gas, the intensity of infrared light reaching the infrared detector will also change, and the output of the infrared detector The electrical signal changes, and the concentration of the gas to be measured can be measured according to the change of the electrical signal. The role of the grating structure is to replace the traditional optical filter. Using the grating spectroscopic technology, by designing a reasonable grating spacing, width, and depth, the wide-band infrared light emitted by the infrared light source becomes a narrow-band window light source, which makes it compatible with the measured gas. The narrow-band infrared light in the band corresponding to the characteristic infrared absorption peak is irradiated to the corresponding reflective micromirror. The reflective micromirror is designed to increase the optical path of infrared rays, which can make the measured gas absorb infrared light more fully. The bonding dummy can make the gas chamber have a suitable height, so that the optical path of gas absorption can also be adjusted. The position of the infrared light source, the position of the grating structure on the lower substrate and the distribution of the infrared detector, and the position and inclination angle of the reflective micromirror must be precisely controlled and cooperated with each other to ensure that the infrared light emitted by the infrared light source passes through the grating structure and then passes through the The multiple reflections of the reflective micromirror happen to be incident on the infrared absorption region of the infrared detector.

为了实现能探测多组分气体的红外传感器,可以在下衬底上制作多种类型的光栅结构,并且在下衬底上制作对应位置结构的红外探测器阵列。最终可实现单光源对多探测器的组合,也可以实现多光源对多探测器的组合,根据用户的需求和对体积的要求,进行高集成度的匹配设计。 In order to realize an infrared sensor capable of detecting multi-component gases, various types of grating structures can be fabricated on the lower substrate, and an infrared detector array corresponding to the position structure can be fabricated on the lower substrate. In the end, the combination of single light source and multiple detectors can be realized, and the combination of multiple light sources and multiple detectors can also be realized. According to the needs of users and the requirements for volume, a highly integrated matching design can be carried out.

本实用新型的优点: Advantage of the utility model:

(1)利用光栅分光技术,创新性的提出一种全单片高集成度无滤光片的红外气体器。 (1) Using grating spectroscopic technology, innovatively propose a fully monolithic and highly integrated infrared gas device without filters.

(2)提出一种巧妙的气室光路结构,结合晶圆级低温键合等关键技术最终实现微型化可集成的气室结构。 (2) Propose an ingenious gas chamber optical path structure, combined with key technologies such as wafer-level low-temperature bonding, and finally realize a miniaturized and integrated gas chamber structure.

(3)设计多种光栅结构,制作探测器阵列,实现多组分气体探测。 (3) Design a variety of grating structures and make detector arrays to realize multi-component gas detection.

附图说明 Description of drawings

图1为单组分红外气体传感器的基本组成和光路设计示意图。 Figure 1 is a schematic diagram of the basic composition and optical path design of a single-component infrared gas sensor.

图2为双组分红外气体传感器的基本组成和光路设计示意图。 Figure 2 is a schematic diagram of the basic composition and optical path design of the two-component infrared gas sensor.

图3为实施例二立体结构示意图。 Fig. 3 is a schematic diagram of the three-dimensional structure of the second embodiment.

图4为双组分红外气体传感器的光栅结构示意图。 Fig. 4 is a schematic diagram of a grating structure of a two-component infrared gas sensor.

图5为多组分(大于3种)红外气体传感器的基本组成和光路设计示意图。 Figure 5 is a schematic diagram of the basic composition and optical path design of a multi-component (more than 3) infrared gas sensor.

图6为多组分红外气体传感器的光栅结构示意图。 Fig. 6 is a schematic diagram of a grating structure of a multi-component infrared gas sensor.

具体实施方式 Detailed ways

下面结合具体附图和实施例对本实用新型作进一步说明。 Below in conjunction with specific accompanying drawing and embodiment the utility model is further described.

实施例一,是一种单组分红外气体传感器。 Embodiment 1 is a single-component infrared gas sensor.

如图1所示:该红外气体传感器包括具有凹坑的上衬底101和具有凹坑的下衬底108,以及位于上衬底101和下衬底108之间的键合假片103。上衬底101、下衬底108以及键合假片103通过低温键合技术键合在一起,中间形成中空的气室107。键合假片103可以为单层或多层材料组成,为了实现与CMOS工艺的兼容性,键合假片103可以选择硅、氧化硅、氮化硅等材料,键合假片103的厚度可以根据气体吸收的光程来调整。上衬底101的凹坑呈四棱台形状。 As shown in FIG. 1 : the infrared gas sensor includes an upper substrate 101 with pits, a lower substrate 108 with pits, and a bonding dummy 103 between the upper substrate 101 and the lower substrate 108 . The upper substrate 101 , the lower substrate 108 and the bonding dummy 103 are bonded together by low-temperature bonding technology, and a hollow air chamber 107 is formed in the middle. The bonding dummy 103 can be made of single-layer or multi-layer materials. In order to realize compatibility with the CMOS process, the bonding dummy 103 can be selected from materials such as silicon, silicon oxide, and silicon nitride. The thickness of the bonding dummy 103 can be Adjust according to the optical path length absorbed by the gas. The pits of the upper substrate 101 are in the shape of a rectangular prism.

在上衬底101上开有与外界交换气体的通气孔(图1中未画出),作为被测气体进出通道。该通气孔也可以开在下衬底108或键合假片103上。 A vent hole (not shown in FIG. 1 ) for exchanging gas with the outside is opened on the upper substrate 101 as a passage for the measured gas to enter and exit. The air hole can also be opened on the lower substrate 108 or the bonding dummy 103 .

在上衬底101凹坑的凹陷处加工有MEMS红外光源102,上衬底101凹坑的侧壁具有特定角度的相对斜面,在相对的斜面上加工有MEMS反射微镜1041、1042。红外光源102为MEMS器件,通过表面微加工工艺和体加工工艺加工而成,红外光源102采用真空封装,以减小热传递、热对流;另外红外光源102与上衬底101间做好一定的热隔离,可减少与上衬底101之间的热扩散,以增加红外辐射效率。红外光源102通过TSV通孔1101与上衬底外表的电极1091电连接,通过电极1091可以给红外光源102进行供电。反射微镜1041、1042是为了增加红外线的光程而设计的。 A MEMS infrared light source 102 is processed in the recess of the pit of the upper substrate 101 , and the sidewall of the pit of the upper substrate 101 has relative slopes with a specific angle, and MEMS reflective micromirrors 1041 and 1042 are processed on the opposite slopes. The infrared light source 102 is a MEMS device, which is processed by surface micromachining technology and body processing technology. The infrared light source 102 is vacuum packaged to reduce heat transfer and heat convection; in addition, a certain distance between the infrared light source 102 and the upper substrate 101 The thermal isolation can reduce the thermal diffusion between the upper substrate 101 and increase the efficiency of infrared radiation. The infrared light source 102 is electrically connected to the electrode 1091 on the surface of the upper substrate through the TSV through hole 1101 , and the infrared light source 102 can be powered through the electrode 1091 . The reflective micromirrors 1041 and 1042 are designed to increase the optical path of infrared rays.

在下衬底108凹坑的凹陷处加工有一个光栅结构106和一个红外探测器105。红外探测器105和光栅结构106为MEMS器件,通过表面微加工工艺和体加工工艺加工而成,其中红外探测器105需要真空封装,以提高红外吸收区对红外能量的吸收,减少热对流作用,提高探测器的灵敏度和精度。光栅结构106作为波段选择窗口,根据被测气体特征红外吸收峰,设计相应的光栅间距和宽度、深度,制作光栅结构106的材料可以是Au、Ag、Al和TiN等。光栅结构106的作用是代替传统的滤光片,利用光栅分光技术,通过设计合理的光栅间距和宽度、深度,使得红外光源发出的宽波段的红外光变成窄带窗口光源。红外探测器105通过TSV通孔1102与下衬底外表的电极1092电连接,从而实现对红外探测器105的电信号引出和供电。 A grating structure 106 and an infrared detector 105 are processed in the depression of the lower substrate 108 . The infrared detector 105 and the grating structure 106 are MEMS devices, which are processed by surface micromachining technology and bulk processing technology, wherein the infrared detector 105 needs to be vacuum packaged to improve the absorption of infrared energy in the infrared absorption area and reduce the effect of heat convection. Improve the sensitivity and precision of the detector. The grating structure 106 is used as a band selection window. According to the characteristic infrared absorption peak of the measured gas, the corresponding grating spacing, width and depth are designed. The material for making the grating structure 106 can be Au, Ag, Al, TiN, etc. The function of the grating structure 106 is to replace the traditional filter, and use the grating spectroscopic technology to make the wide-band infrared light emitted by the infrared light source into a narrow-band window light source by designing a reasonable grating spacing, width, and depth. The infrared detector 105 is electrically connected to the electrode 1092 on the outer surface of the lower substrate through the TSV through hole 1102 , so as to realize electrical signal extraction and power supply to the infrared detector 105 .

上衬底上红外光源102的位置、下衬底上光栅结构106和红外探测器105分布的位置与上衬底凹坑斜面上反射微镜1041、1042的位置、倾斜角度需要精确配合,使得红外光源102发出的红外光经过光栅结构106分光后,与被测气体特征红外吸收峰对应波段的窄带红外光射向反射微镜1041,再经过反射微镜1041、1042的先后反射后,正好入射到红外探测器105的红外吸收区。 The position of the infrared light source 102 on the upper substrate, the position of the distribution of the grating structure 106 and the infrared detector 105 on the lower substrate, and the positions and inclination angles of the reflective micromirrors 1041, 1042 on the pit slope of the upper substrate need to be precisely matched, so that the infrared After the infrared light emitted by the light source 102 is split by the grating structure 106, the narrow-band infrared light corresponding to the characteristic infrared absorption peak of the gas to be measured shoots to the reflective micromirror 1041, and after being reflected by the reflective micromirrors 1041 and 1042, it happens to be incident on the The infrared absorption region of the infrared detector 105 .

实施例二,是一种双组分红外气体传感器。 Embodiment 2 is a two-component infrared gas sensor.

如图2、图3所示:与实施例一的主要区别在于红外光源102的下方设计有两个并列的光栅结构1061、1062,在光栅结构1061、1062的左右两边分别是红外探测器1051和1052。图4中箭头方向所示为各光栅所对应的表面等离子波的传输方向。 As shown in Figure 2 and Figure 3: the main difference from Embodiment 1 is that there are two juxtaposed grating structures 1061, 1062 designed under the infrared light source 102, and on the left and right sides of the grating structures 1061, 1062 are infrared detectors 1051 and 1052. The direction of the arrow in FIG. 4 shows the propagation direction of the surface plasmon wave corresponding to each grating.

双组分红外气体传感器的光路设计如图2中的各箭头线所示, The optical path design of the two-component infrared gas sensor is shown by the arrow lines in Figure 2,

红外光源102发出的红外光经过光栅结构1061分光后,与第一被测气体特征红外吸收峰对应波段的窄带红外光射向反射微镜1042,再经过反射微镜1042、1041的先后反射后,正好入射到红外探测器1052的红外吸收区。 After the infrared light emitted by the infrared light source 102 is split by the grating structure 1061, the narrow-band infrared light corresponding to the band corresponding to the characteristic infrared absorption peak of the first measured gas is directed to the reflective micromirror 1042, and then reflected by the reflective micromirrors 1042 and 1041 successively. Just incident to the infrared absorption region of the infrared detector 1052.

红外光源102发出的红外光经过光栅结构1062分光后,与第二被测气体特征红外吸收峰对应波段的窄带红外光射向反射微镜1041,再经过反射微镜1041、1042的先后反射后,正好入射到红外探测器1051的红外吸收区。 After the infrared light emitted by the infrared light source 102 is split by the grating structure 1062, the narrow-band infrared light corresponding to the wavelength band corresponding to the characteristic infrared absorption peak of the second measured gas is directed to the reflective micromirror 1041, and then reflected by the reflective micromirrors 1041 and 1042 successively. Just incident to the infrared absorption region of the infrared detector 1051.

通过检测两红外探测器的电学信号,从而分析两种被测气体浓度。 By detecting the electrical signals of the two infrared detectors, the concentrations of the two measured gases are analyzed.

实施例二其余的设计同实施例一。 All the other designs of embodiment two are the same as embodiment one.

实施例三,是一种多组分红外气体传感器。 The third embodiment is a multi-component infrared gas sensor.

如图5所示:与实施例一的主要区别在于红外光源102的下方设计有四种光栅结构1063、1064、1065、1066,大体上成田字形分布,形成了光栅结构阵列。图6中箭头方向所示为各光栅所对应的表面等离子波的传输方向。在上述光栅结构阵列的前后左右分别是红外探测器1056、1054、1055、1053。上衬底101的凹坑呈四棱台形状,在凹坑的四个侧壁的斜面上均加工有MEMS反射微镜,分别是反射微镜1041、1042、1043、1044。 As shown in Figure 5: the main difference from Embodiment 1 is that there are four grating structures 1063, 1064, 1065, and 1066 designed under the infrared light source 102, which are generally distributed in the shape of a field, forming a grating structure array. The direction of the arrow in FIG. 6 shows the propagation direction of the surface plasmon wave corresponding to each grating. There are infrared detectors 1056 , 1054 , 1055 , and 1053 at the front, rear, left, and right sides of the grating structure array, respectively. The pit on the upper substrate 101 is in the shape of a square prism, and MEMS reflective micromirrors are processed on the slopes of the four side walls of the pit, which are respectively reflective micromirrors 1041 , 1042 , 1043 , and 1044 .

多组分红外气体传感器的光路设计如图5中的各箭头线所示, The optical path design of the multi-component infrared gas sensor is shown by the arrow lines in Figure 5,

红外光源102发出的红外光经过光栅结构1063分光后,与第一被测气体特征红外吸收峰对应波段的窄带红外光射向反射微镜1042,再经过反射微镜1042、1041的先后反射后,正好入射到红外探测器1053的红外吸收区。 After the infrared light emitted by the infrared light source 102 is split by the grating structure 1063, the narrow-band infrared light corresponding to the wavelength band corresponding to the characteristic infrared absorption peak of the first measured gas is directed to the reflective micromirror 1042, and then reflected successively by the reflective micromirrors 1042 and 1041, Just incident to the infrared absorption region of the infrared detector 1053.

红外光源102发出的红外光经过光栅结构1064分光后,与第二被测气体特征红外吸收峰对应波段的窄带红外光射向反射微镜1043,再经过反射微镜1043、1044的先后反射后,正好入射到红外探测器1054的红外吸收区。 After the infrared light emitted by the infrared light source 102 is split by the grating structure 1064, the narrow-band infrared light corresponding to the wavelength band corresponding to the characteristic infrared absorption peak of the second measured gas is directed to the reflective micromirror 1043, and then reflected successively by the reflective micromirrors 1043 and 1044, Just incident to the infrared absorption region of the infrared detector 1054.

红外光源102发出的红外光经过光栅结构1065分光后,与第三被测气体特征红外吸收峰对应波段的窄带红外光射向反射微镜1041,再经过反射微镜1041、1042的先后反射后,正好入射到红外探测器1055的红外吸收区。 After the infrared light emitted by the infrared light source 102 is split by the grating structure 1065, the narrow-band infrared light corresponding to the band corresponding to the characteristic infrared absorption peak of the third measured gas is directed to the reflective micromirror 1041, and then reflected by the reflective micromirrors 1041 and 1042 successively. Just incident to the infrared absorption region of the infrared detector 1055.

红外光源102发出的红外光经过光栅结构1066分光后,与第四被测气体特征红外吸收峰对应波段的窄带红外光射向反射微镜1044,再经过反射微镜1044、1043的先后反射后,正好入射到红外探测器1056的红外吸收区。 After the infrared light emitted by the infrared light source 102 is split by the grating structure 1066, the narrow-band infrared light corresponding to the wavelength band corresponding to the characteristic infrared absorption peak of the fourth measured gas is directed to the reflective micromirror 1044, and then reflected by the reflective micromirrors 1044 and 1043 successively. Just incident to the infrared absorption region of the infrared detector 1056.

通过检测上述四个红外探测器的电学信号,从而可以分析四种被测气体浓度。 By detecting the electrical signals of the above four infrared detectors, the concentrations of the four measured gases can be analyzed.

实施例三其余的设计同实施例一。 All the other designs of embodiment three are the same as embodiment one.

上述实施例可以用来说明本实用新型的结构和制造过程,但本实用新型的实施绝不仅限于上述实施例。在不脱离本实用新型及所附的权利要求的范围内,各种替换、变化和修改都是可能的。因此,本实用新型的保护范围不局限于实施例和附图所公开的内容。 The above-mentioned embodiments can be used to illustrate the structure and manufacturing process of the present utility model, but the implementation of the present utility model is by no means limited to the above-mentioned embodiments. Various substitutions, changes and modifications are possible without departing from the scope of the invention and the appended claims. Therefore, the protection scope of the present utility model is not limited to the content disclosed in the embodiments and drawings.

Claims (8)

1. a monolithic integrated miniature infrared gas sensor is characterized in that, comprising:
Upper substrate and the lower substrate with pit with pit, and the false sheet of the bonding between upper substrate and lower substrate, the false sheet of upper substrate, lower substrate and bonding combines, the middle air chamber that forms hollow;
The recess of upper substrate pit is provided with infrared light supply, and the sidewall of upper substrate pit has relative inclined-plane, is provided with the reflection micro mirror on relative inclined-plane; Infrared light supply is electrically connected the electrode of upper substrate appearance;
The recess of lower substrate pit is distributed with one or more optical grating constructions, and the infrared eye consistent with optical grating construction quantity; Infrared eye is electrically connected the electrode of lower substrate appearance;
Match in position and the angle of inclination of reflecting micro mirror on the position that optical grating construction on the position of infrared light supply, the lower substrate, infrared eye distribute on the upper substrate and the upper substrate pit inclined-plane, so that after the light splitting of the infrared light that infrared light supply sends process optical grating construction, with the arrowband infrared light directive reflection micro mirror of the corresponding wave band of tested gas characteristic infrared absorption peak, and after the reflection of reflection micro mirror, accurately be incident to infrared eye;
Have air hole with extraneous exchanging gas at upper substrate, lower substrate or the false sheet of bonding.
2. monolithic integrated miniature infrared gas sensor as claimed in claim 1 is characterized in that: described infrared light supply is electrically connected with the electrode of upper substrate appearance by the TSV through hole.
3. monolithic integrated miniature infrared gas sensor as claimed in claim 1 is characterized in that: described infrared eye is electrically connected with the electrode of lower substrate appearance by the TSV through hole.
4. monolithic integrated miniature infrared gas sensor as claimed in claim 1 is characterized in that: described infrared light supply employing Vacuum Package.
5. monolithic integrated miniature infrared gas sensor as claimed in claim 1 is characterized in that: described infrared eye employing Vacuum Package.
6. monolithic integrated miniature infrared gas sensor as claimed in claim 1 is characterized in that: the pit of upper substrate is the truncated rectangular pyramids shape.
7. monolithic integrated miniature infrared gas sensor as claimed in claim 1 is characterized in that: the false sheet of bonding is that the single or multiple lift material forms, and the material of the false sheet of bonding comprises silicon, monox, silicon nitride.
8. monolithic integrated miniature infrared gas sensor as claimed in claim 1 is characterized in that: go up the false sheet of substrate, lower substrate and bonding and be bonded together by bonding techniques.
CN 201320269323 2013-05-16 2013-05-16 Monolithic integrated miniature infrared gas sensor Expired - Lifetime CN203259470U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201320269323 CN203259470U (en) 2013-05-16 2013-05-16 Monolithic integrated miniature infrared gas sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201320269323 CN203259470U (en) 2013-05-16 2013-05-16 Monolithic integrated miniature infrared gas sensor

Publications (1)

Publication Number Publication Date
CN203259470U true CN203259470U (en) 2013-10-30

Family

ID=49472022

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201320269323 Expired - Lifetime CN203259470U (en) 2013-05-16 2013-05-16 Monolithic integrated miniature infrared gas sensor

Country Status (1)

Country Link
CN (1) CN203259470U (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103245634A (en) * 2013-05-16 2013-08-14 江苏物联网研究发展中心 Monolithic integrated miniature infrared gas sensor
CN106986298A (en) * 2015-10-27 2017-07-28 日月光半导体制造股份有限公司 Semiconductor device package and method of manufacturing the same
US9816920B2 (en) 2014-01-15 2017-11-14 Robert Bosch Gmbh Method for producing an integrated micromechanical fluid sensor component, integrated micromechanical fluid sensor component and method for detecting a fluid by means of an integrated micromechanical fluid sensor component
CN115060682A (en) * 2022-06-30 2022-09-16 中国科学院上海微系统与信息技术研究所 A back-hole on-chip integrated miniature infrared gas sensor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103245634A (en) * 2013-05-16 2013-08-14 江苏物联网研究发展中心 Monolithic integrated miniature infrared gas sensor
US9816920B2 (en) 2014-01-15 2017-11-14 Robert Bosch Gmbh Method for producing an integrated micromechanical fluid sensor component, integrated micromechanical fluid sensor component and method for detecting a fluid by means of an integrated micromechanical fluid sensor component
CN106986298A (en) * 2015-10-27 2017-07-28 日月光半导体制造股份有限公司 Semiconductor device package and method of manufacturing the same
CN106986298B (en) * 2015-10-27 2019-06-21 日月光半导体制造股份有限公司 Semiconductor device package and method of manufacturing the same
US10526200B2 (en) 2015-10-27 2020-01-07 Advanced Semiconductor Engineering, Inc. Semiconductor device package including cover including tilted inner sidewall
CN115060682A (en) * 2022-06-30 2022-09-16 中国科学院上海微系统与信息技术研究所 A back-hole on-chip integrated miniature infrared gas sensor

Similar Documents

Publication Publication Date Title
CN103245634B (en) Monolithic integrated miniature infrared gas sensor
CN203259470U (en) Monolithic integrated miniature infrared gas sensor
WO2021212931A1 (en) Two-dimensional, multi-point-reflection, long-optical-distance gas sensor probe, and gas sensor
US11346767B2 (en) Detector cell for a photoacoustic gas sensor and photoacoustic gas sensor
TWI502212B (en) Optical device, photosensitive element using microlens and manufacturing method thereof
CN110132877B (en) Integrated infrared gas sensor based on MEMS
CN113227733B (en) Airborne radiation sensing equipment
CN110907385A (en) NDIR infrared gas sensor
CN108426833B (en) Full-integrated infrared gas sensor based on box-shaped air chamber structure
JP2015152438A (en) Non-dispersive infrared analyzing gas sensor and non-dispersive infrared analyzing gas sensing apparatus
CN109470644A (en) Compact infrared optics gas absorption cell and infrared gas sensor
CN113484267A (en) Infrared gas sensor based on silicon-based multiple reflection cavity
CN204287035U (en) Miniature infrared gas sensor
CN115078289A (en) A sandwich-type on-chip integrated miniature infrared gas sensor
CN113358596B (en) A miniature NDIR integrated infrared gas sensor with double-layer gas chamber
CN109459145A (en) The preparation method of two waveband non-refrigerated infrared detector based on micro-electro-mechanical resonator
CN106932104A (en) Double-element flame detection sensor
CN203241337U (en) Sensing structure for detecting infrared methane concentration
CN203148841U (en) High sensitive multiple reflective optical absorption device
CN113008823B (en) Full-integrated infrared gas sensor
Zhang et al. Gas chamber and thermal isolation structure simulation for an integrated NDIR gas sensor
CN114965339A (en) Integrated infrared gas sensor with special-shaped gas chamber and using method thereof
CN115060682A (en) A back-hole on-chip integrated miniature infrared gas sensor
CN114486796A (en) NDIR multi-component gas detection module
CN110095426A (en) A kind of infrared gas sensor based on infrared emission and detection integrated chip

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term

Granted publication date: 20131030

CX01 Expiry of patent term