CN203251229U - Switch power supply of IGBT predriving circuit - Google Patents

Switch power supply of IGBT predriving circuit Download PDF

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Publication number
CN203251229U
CN203251229U CN 201320180241 CN201320180241U CN203251229U CN 203251229 U CN203251229 U CN 203251229U CN 201320180241 CN201320180241 CN 201320180241 CN 201320180241 U CN201320180241 U CN 201320180241U CN 203251229 U CN203251229 U CN 203251229U
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circuit
type mosfet
connects
pin
gate
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CN 201320180241
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Chinese (zh)
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金宁治
吕德刚
丁树业
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Harbin University of Science and Technology
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Harbin University of Science and Technology
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Abstract

The utility model relates to a switch power supply of an IGBT predriving circuit. In a traditional IGBT predriving circuit, four independent integrated DC/DC conversion modules are adopted, and four mutually isolated DC power supplies are provided and a negative switching-off voltage is generated, and integral volume and cost of a predriver are enlarged. The switch power supply of the IGBT predriving circuit comprises a square wave generating circuit (1) which is connected with a switch signal generating circuit (2). The switch signal generating circuit is connected with a full bridge type inverter circuit (3). The full bridge type inverter circuit is connected with a high-frequency transformer (4). The high-frequency transformer is connected with an output rectifying bleeder circuit (5). The output rectifying bleeder circuit is connected with an IGBT predriver power supply part (6), wherein the full bridge type inverter circuit is connected with an input DC power supply (8) through a front-end step-down chopper circuit (7). The switch power supply of the IGBT predriving circuit is applied for power supply to the predriving circuit of a three-phase bridge type voltage type inverter.

Description

The Switching Power Supply of IGBT predrive circuit
Technical field:
The utility model relates to a kind ofIGB The Switching Power Supply of T predrive circuit.Be specifically related to a kind of Switching Power Supply that can export four road separate direct voltages and produce negative shutoff voltage.
Background technology:
The power supply quality of IGBT predrive circuit power supply, the overall performance of the inverter that directly has influence on the switching characteristic of IGBT even formed by IGBT, the turn-on and turn-off of six IGBT in the three-phase bridge voltage source inverter, need predrive circuit that four tunnel DC power supply of mutually isolating are provided, especially the shutoff of high-power IGBT needs predrive circuit that negative dc voltage is provided, traditional IGBT predrive circuit adopts four independently integrated DC/DC conversion modules usually, has increased overall volume and the cost of pre-driver.
Switching Power Supply is to utilize modern power electronics technology, and the ratio that turns on and off of control switch pipe (being duty ratio) is to keep a kind of power supply of output voltage stabilization.Switching Power Supply generally partly is comprised of switching tube, high frequency transformer, Duty ratio control chip and output rectification circuit etc., has small-sized, light weight and the characteristics such as efficient, at present extensive use in electric/electronic device.The high frequency transformer of Switching Power Supply can be realized the Multiple isolated outputs function, the high frequency transformer that has four secondary winding because of employing, can satisfy the driving requirement of six IGBT in the three-phase bridge voltage source inverter, can also improve power density and the cost performance of IGBT predrive circuit, but Switching Power Supply needs output voltage feedback and Duty ratio control chip, adjusting in real time the break-make duty ratio of switching tube according to the output voltage actual conditions, thereby reach the purpose of regulated output voltage.Yet output voltage feedback needs usually that precision is higher, also higher linear optical coupling of cost, to guarantee the control accuracy of output voltage; The Duty ratio control chip has not only increased the design and debugging complexity of Switching Power Supply, and has further increased circuit cost.
Summary of the invention:
The purpose of this utility model provides a kind ofIGB The Switching Power Supply of T predrive circuit.
Above-mentioned purpose realizes by following technical scheme:
A kind ofIGB The Switching Power Supply of T predrive circuit, its composition comprises: the square wave circuit for generating, described square wave circuit for generating connecting valve signal generating circuit, described switching signal generative circuit connects full bridge inversion circuit, described full bridge inversion circuit connects high frequency transformer, described high frequency transformer connects output rectification and voltage division circuit, described output rectification and voltage division circuit is connected to IGBT pre-driver power pack, and wherein said full bridge inversion circuit also is connected with input DC power by the front end buck circuit.
The Switching Power Supply of described IGBT predrive circuit, described input DC power is 8-40V, the output voltage of described front end buck circuit is the 5V direct voltage, and described front end buck circuit connects the control circuit power pack by the DC/DC converter.
The Switching Power Supply of described IGBT predrive circuit, described square wave circuit for generating produces the square-wave signal VG of amplitude 5V, frequency 60kHz, duty ratio 50%, described square-wave signal VG connecting valve signal generating circuit, square-wave signal VG is carried out logical conversion to described switching signal generative circuit and the dead band is reserved, and output four-way switch signal VG1-VG4; Described switching signal generative circuit comprises not gate U3, diode D3, resistance R 8, capacitor C 8, diode D4, resistance R 9 and capacitor C 9, described square-wave signal VG connects 3 pin of described not gate U3,2 pin of described not gate U3 connect an end of described resistance R 8 and the K utmost point of diode D3, the other end of described resistance R 8 connects 5 pin of described not gate U3 and the A utmost point of diode D3, one end of described capacitor C 8 connects the 5 pin other end ground connection of described not gate U3, the end of the described R9 of 2 pin contact resistances of described not gate U3 and the A utmost point of diode D4, the other end of described resistance R 9 connects 7 pin of described not gate U3 and the K utmost point of diode D4, one end of described capacitor C 9 connects the 7 pin other end ground connection of described not gate U3,4 pin of described not gate U3 connect 11 pin of described not gate U3,6 pin of described not gate U3 connect 9 pin of described not gate U3,4 pin of described not gate U3,6 pin, 10 pin, 12 pin are exported respectively four-way switch signal VG1-VG4, and described four-way switch signal VG1-VG4 connects described full bridge inverter.
The Switching Power Supply of described IGBT predrive circuit, described full bridge inverter comprise P type MOSFET U4B, N-type MOSFET U4A, P type MOSFET U5B and N-type MOSFET U5A; Described P type MOSFET U4B, N-type MOSFET U4A, P type MOSFET U5B is connected the G utmost point and is connected respectively described switching signal VG1-VG4 with N-type MOSFET U5A, described P type MOSFET U4B is connected the D utmost point and is connected described 5V direct voltage with P type MOSFET U5B, the S utmost point of described P type MOSFET U4B connects the D utmost point of described N-type MOSFET U4A, the S utmost point of described P type MOSFET U5B connects the D utmost point of described N-type MOSFET U5A, the S utmost point ground connection of described N-type MOSFET U4A and N-type MOSFET U5A, the S utmost point of described P type MOSFET U4B connects the end of capacitance C128, the other end of described capacitance C128 is connected to an end of the armature winding of described high frequency transformer, the S utmost point that the other end of the armature winding of described high frequency transformer connects described P type MOSFET U5B connects, described high frequency transformer also has four secondary winding, and described secondary winding connects respectively output rectification and voltage division circuit separately.
The Switching Power Supply of described IGBT predrive circuit, described output rectification and voltage division circuit comprises rectification circuit and bleeder circuit, described rectification circuit comprises diode D5, diode D6, diode D7, diode D8 and capacitor C 13, and described bleeder circuit comprises resistance R 10,5V voltage-stabiliser tube D9 and capacitor C 14-C17; Described rectification circuit is the uncontrollable type rectification circuit of single-phase bridge and exports the 20V direct voltage that described bleeder circuit is separated into 15V positive voltage and 5V negative voltage two parts with the 20V direct voltage, to drive respectively the turn-on and turn-off of corresponding IGBT.
The beneficial effects of the utility model:
1, the utility model is provided with the front end buck circuit, and input voltage range is widened into 8-40V, can directly be connected the especially connection of automobile power source bus with the external power source bus easily.
, high frequency transformer of the present utility model adopts four secondary winding, exportable four road separate direct voltages, four traditional separate DC/DC translation circuits have been replaced, producing four tunnel 20V DC power supply of mutually isolating, thereby overall volume and the cost of Switching Power Supply have significantly been reduced.
, the utility model need not output voltage feedback and Duty ratio control chip: when input voltage fluctuates in allowed band, the stability of front end buck circuit output voltage and even the stability of whole output voltage have reduced the impact that input voltage fluctuation brings, thereby can adopt easy square wave circuit for generating and switching signal generative circuit to provide the signal of the driving with fixed duty cycle for full bridge inverter.
, design of the present utility model can obtain to turn-off negative voltage: every road output voltage all can obtain the 5V negative voltage by output rectification and voltage division circuit, to improve the turn-off speed of IGBT, save boostrap circuit or negative voltage power supply.
, the utility model is easy to expand to the control circuit power supply: the 5V direct voltage of front end buck circuit output can directly be the control circuit power supply, through being that control circuit is powered after the DC/DC conversion.
Description of drawings:
Fig. 1 is structural representation of the present utility model.
Fig. 2 is front end buck circuit schematic diagram.
Fig. 3 is square wave circuit for generating and switching signal generative circuit schematic diagram.
Fig. 4 is the switching signal sequential chart.
Fig. 5 is full bridge inverter and high frequency transformer schematic diagram.
Fig. 6 is one tunnel output rectification and voltage division circuit theory diagrams
Embodiment:
Embodiment 1:
A kind ofIGB The Switching Power Supply of T predrive circuit, its composition comprises: square wave circuit for generating 1, described square wave circuit for generating connecting valve signal generating circuit 2, described switching signal generative circuit connects full bridge inversion circuit 3, described full bridge inversion circuit connects high frequency transformer 4, described high frequency transformer connects output rectification and voltage division circuit 5, described output rectification and voltage division circuit is connected to IGBT pre-driver power pack 6, and wherein said full bridge inversion circuit also is connected with input DC power 8 by front end buck circuit 7.
Embodiment 2:
The Switching Power Supply of embodiment 1 described IGBT predrive circuit, described input DC power is 8-40V, the output voltage of described front end buck circuit is the 5V direct voltage, and described front end buck circuit connects control circuit power pack 10 by DC/DC converter 9.
Embodiment 3:
The Switching Power Supply of embodiment 1 or 2 described IGBT predrive circuits, described square wave circuit for generating produces the square-wave signal VG of amplitude 5V, frequency 60kHz, duty ratio 50%, described square-wave signal VG connecting valve signal generating circuit, square-wave signal VG is carried out logical conversion to described switching signal generative circuit and the dead band is reserved, and output four-way switch signal VG1-VG4; Described switching signal generative circuit comprises not gate U3, diode D3, resistance R 8, capacitor C 8, diode D4, resistance R 9 and capacitor C 9, described square-wave signal VG connects 3 pin of described not gate U3,2 pin of described not gate U3 connect an end of described resistance R 8 and the K utmost point of diode D3, the other end of described resistance R 8 connects 5 pin of described not gate U3 and the A utmost point of diode D3, one end of described capacitor C 8 connects the 5 pin other end ground connection of described not gate U3, the end of the described R9 of 2 pin contact resistances of described not gate U3 and the A utmost point of diode D4, the other end of described resistance R 9 connects 7 pin of described not gate U3 and the K utmost point of diode D4, one end of described capacitor C 9 connects the 7 pin other end ground connection of described not gate U3,4 pin of described not gate U3 connect 11 pin of described not gate U3,6 pin of described not gate U3 connect 9 pin of described not gate U3,4 pin of described not gate U3,6 pin, 10 pin, 12 pin are exported respectively four-way switch signal VG1-VG4, and described four-way switch signal VG1-VG4 connects described full bridge inverter.
Embodiment 4:
The Switching Power Supply of embodiment 1 or 2 described IGBT predrive circuits, described full bridge inverter comprise P type MOSFET U4B, N-type MOSFET U4A, P type MOSFET U5B and N-type MOSFET U5A; Described P type MOSFET U4B, N-type MOSFET U4A, P type MOSFET U5B is connected the G utmost point and is connected respectively described switching signal VG1-VG4 with N-type MOSFET U5A, described P type MOSFET U4B is connected the D utmost point and is connected described 5V direct voltage with P type MOSFET U5B, the S utmost point of described P type MOSFET U4B connects the D utmost point of described N-type MOSFET U4A, the S utmost point of described P type MOSFET U5B connects the D utmost point of described N-type MOSFET U5A, the S utmost point ground connection of described N-type MOSFET U4A and N-type MOSFET U5A, the S utmost point of described P type MOSFET U4B connects the end of capacitance C128, the other end of described capacitance C128 is connected to an end of the armature winding of described high frequency transformer, the S utmost point that the other end of the armature winding of described high frequency transformer connects described P type MOSFET U5B connects, described high frequency transformer also has four secondary winding, and described secondary winding connects respectively output rectification and voltage division circuit separately.
Embodiment 5:
The Switching Power Supply of embodiment 4 described IGBT predrive circuits, described output rectification and voltage division circuit comprises rectification circuit and bleeder circuit, described rectification circuit comprises diode D5, diode D6, diode D7, diode D8 and capacitor C 13, and described bleeder circuit comprises resistance R 10,5V voltage-stabiliser tube D9 and capacitor C 14-C17; Described rectification circuit is the uncontrollable type rectification circuit of single-phase bridge and exports the 20V direct voltage that described bleeder circuit is separated into 15V positive voltage and 5V negative voltage two parts with the 20V direct voltage, to drive respectively the turn-on and turn-off of corresponding IGBT.

Claims (5)

1. A kind ofIGB The Switching Power Supply of T predrive circuit, its composition comprises: the square wave circuit for generating, it is characterized in that: described square wave circuit for generating connecting valve signal generating circuit, described switching signal generative circuit connects full bridge inversion circuit, described full bridge inversion circuit connects high frequency transformer, described high frequency transformer connects output rectification and voltage division circuit, described output rectification and voltage division circuit is connected to IGBT pre-driver power pack, and wherein said full bridge inversion circuit also is connected with input DC power by the front end buck circuit.
2. The Switching Power Supply of IGBT predrive circuit according to claim 1, it is characterized in that: described input DC power is 8-40V, the output voltage of described front end buck circuit is the 5V direct voltage, and described front end buck circuit connects the control circuit power pack by the DC/DC converter.
3. The Switching Power Supply of IGBT predrive circuit according to claim 1 and 2, it is characterized in that: described square wave circuit for generating produces the square-wave signal VG of amplitude 5V, frequency 60kHz, duty ratio 50%, described square-wave signal VG connecting valve signal generating circuit, square-wave signal VG is carried out logical conversion to described switching signal generative circuit and the dead band is reserved, and output four-way switch signal VG1-VG4; Described switching signal generative circuit comprises not gate U3, diode D3, resistance R 8, capacitor C 8, diode D4, resistance R 9 and capacitor C 9, described square-wave signal VG connects 3 pin of described not gate U3,2 pin of described not gate U3 connect an end of described resistance R 8 and the K utmost point of diode D3, the other end of described resistance R 8 connects 5 pin of described not gate U3 and the A utmost point of diode D3, one end of described capacitor C 8 connects the 5 pin other end ground connection of described not gate U3, the end of the described R9 of 2 pin contact resistances of described not gate U3 and the A utmost point of diode D4, the other end of described resistance R 9 connects 7 pin of described not gate U3 and the K utmost point of diode D4, one end of described capacitor C 9 connects the 7 pin other end ground connection of described not gate U3,4 pin of described not gate U3 connect 11 pin of described not gate U3,6 pin of described not gate U3 connect 9 pin of described not gate U3,4 pin of described not gate U3,6 pin, 10 pin, 12 pin are exported respectively four-way switch signal VG1-VG4, and described four-way switch signal VG1-VG4 connects described full bridge inverter.
4. The Switching Power Supply of IGBT predrive circuit according to claim 1 and 2 is characterized in that: described full bridge inverter comprises P type MOSFET U4B, N-type MOSFET U4A, P type MOSFET U5B and N-type MOSFET U5A; Described P type MOSFET U4B, N-type MOSFET U4A, P type MOSFET U5B is connected the G utmost point and is connected respectively described switching signal VG1-VG4 with N-type MOSFET U5A, described P type MOSFET U4B is connected the D utmost point and is connected described 5V direct voltage with P type MOSFET U5B, the S utmost point of described P type MOSFET U4B connects the D utmost point of described N-type MOSFET U4A, the S utmost point of described P type MOSFET U5B connects the D utmost point of described N-type MOSFET U5A, the S utmost point ground connection of described N-type MOSFET U4A and N-type MOSFET U5A, the S utmost point of described P type MOSFET U4B connects the end of capacitance C128, the other end of described capacitance C128 is connected to an end of the armature winding of described high frequency transformer, the S utmost point that the other end of the armature winding of described high frequency transformer connects described P type MOSFET U5B connects, described high frequency transformer also has four secondary winding, and described secondary winding connects respectively output rectification and voltage division circuit separately.
5. The Switching Power Supply of IGBT predrive circuit according to claim 4, it is characterized in that: described output rectification and voltage division circuit comprises rectification circuit and bleeder circuit, described rectification circuit comprises diode D5, diode D6, diode D7, diode D8 and capacitor C 13, and described bleeder circuit comprises resistance R 10,5V voltage-stabiliser tube D9 and capacitor C 14-C17; Described rectification circuit is the uncontrollable type rectification circuit of single-phase bridge and exports the 20V direct voltage that described bleeder circuit is separated into 15V positive voltage and 5V negative voltage two parts with the 20V direct voltage, to drive respectively the turn-on and turn-off of corresponding IGBT.
CN 201320180241 2013-07-25 2013-07-25 Switch power supply of IGBT predriving circuit Expired - Fee Related CN203251229U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201320180241 CN203251229U (en) 2013-07-25 2013-07-25 Switch power supply of IGBT predriving circuit

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Application Number Priority Date Filing Date Title
CN 201320180241 CN203251229U (en) 2013-07-25 2013-07-25 Switch power supply of IGBT predriving circuit

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104833906A (en) * 2015-05-20 2015-08-12 哈尔滨理工大学 IGBT (insulated gate bipolar transistor) high-voltage switch for cable partial discharge detection
CN107483034A (en) * 2017-07-13 2017-12-15 江苏广义牵引技术研究所有限公司 High-power IGBT drive control device and control method
CN116317536A (en) * 2023-05-19 2023-06-23 青岛艾诺仪器有限公司 High-voltage non-overshoot direct-current power supply

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104833906A (en) * 2015-05-20 2015-08-12 哈尔滨理工大学 IGBT (insulated gate bipolar transistor) high-voltage switch for cable partial discharge detection
CN107483034A (en) * 2017-07-13 2017-12-15 江苏广义牵引技术研究所有限公司 High-power IGBT drive control device and control method
CN116317536A (en) * 2023-05-19 2023-06-23 青岛艾诺仪器有限公司 High-voltage non-overshoot direct-current power supply
CN116317536B (en) * 2023-05-19 2023-08-15 青岛艾诺仪器有限公司 High-voltage non-overshoot direct-current power supply

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CF01 Termination of patent right due to non-payment of annual fee
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Granted publication date: 20131023

Termination date: 20160725