CN203243214U - Frequency conversion device - Google Patents

Frequency conversion device Download PDF

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Publication number
CN203243214U
CN203243214U CN 201320302569 CN201320302569U CN203243214U CN 203243214 U CN203243214 U CN 203243214U CN 201320302569 CN201320302569 CN 201320302569 CN 201320302569 U CN201320302569 U CN 201320302569U CN 203243214 U CN203243214 U CN 203243214U
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China
Prior art keywords
unit
signal
switch
circuit
igbt
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CN 201320302569
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Chinese (zh)
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黄辉
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SHENZHEN HEXING JIANENG TECHNOLOGY Co Ltd
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SHENZHEN HEXING JIANENG TECHNOLOGY Co Ltd
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Abstract

A frequency conversion device comprises a switching power supply unit, a six-channel driving power supply unit and a six-channel driving signal processing unit. Each channel of the driving power supply unit provides working power for one channel of an IGBT driving unit; each channel of the driving signal processing unit provides an isolated driving signal for one channel of the IGBT driving unit to drive one channel of an IGBT; and each channel of the driving signal processing unit includes a receiving circuit, a carrier circuit, a modulation and isolation circuit and a demodulation circuit, wherein the receiving circuit provides a driving signal, the carrier circuit outputs a carrier signal with a certain frequency square wave, the modulation and isolation circuit modulates the driving signal on the carrier signal and sends the driving signal out through a signal isolation transformer, and the demodulation circuit demodulates an IGBT driving signal and sends the IGBT driving signal to one channel of the IGBT driving unit to drive one channel of the IGBT. The frequency conversion device can ensure effective control on the IGBT.

Description

Converter plant
Technical field
The utility model relates to a kind of converter plant, relates in particular to a kind of IGBT switching drive signal transmission circuit of converter plant.
Background technology
In the evolution of high pressure converter technique, the driving power of high-power switch device and the transmission of driving signal and processing are one of key technologies of frequency converter development always.How to optimize to the full extent the transmission process of driving power and the driving signal of high-power switch device, seem the most important to guarantee the reliable and stable work of high-power switch device.Using high-power switch device, for example: insulated gate bipolar translator power tube is when (being called for short IGBT), and it is the Focal point and difficult point of circuit design that driving power and driving signal are processed, and is the key of converter technology.Referring to Fig. 1, existing IGBT driving power generally includes a switching power supply E, it has a switch transformer E1,6 tunnel output ns1 of this switching power supply E, ns2, ns3, ns4, ns5, ns6 is by rectification, can be 6 road IGBT after filtering is processed 6 road driving power UP1-UN1 are provided, VP1-VN1, WP1-WN1, UP2-UN2, VP2-VN2, WP2-WN2, this driving power structure existing problems: switch transformer E1 skeleton pin is many, volume is large, the driving power on each road is all different, each road driving voltage is uneven, can have influence on the reliability that IGBT drives.In addition, 6 tunnel control signals are to want successively to process to control 6 road IGBT drive circuits to drive 6 road IGBT through the buffer circuit of No. 6 receiving circuits and 6 tunnel, if adopt the optocoupler isolation method, then because isolation voltage is relatively low, there are transmission delay, aging, the problem such as reliability is low; If adopt the words of pulse transformer isolation method, then because the saturation problem of the magnetic core of pulse transformer can cause restriction to the ON time of control impuls, the problem that in signal transduction process, has the drive waveforms distortion, particularly when driving high-power IGBT, because the input capacitance of IGBT is larger, cause the drive waveforms of the secondary output of pulse transformer to be difficult to satisfy the driving requirement.As seen, be necessary existing IGBT Driving technique is improved in fact.
The utility model content
Technical problem to be solved in the utility model is to overcome the existing deficiency of above-mentioned prior art, and proposes a kind of IGBT Driving technique, can guarantee effective control of IGBT.
The utility model proposes a kind of converter plant for above-mentioned technical problem, it comprises a switching power supply, six tunnel driving power unit and six tunnel driving signal processing unit, driving power unit, every road provides working power for one road IGBT driver element, every road drives signal processing unit provides driving signal through isolation to drive one road IGBT for one road IGBT driver element, the driving signal processing unit on every road comprises a receiving circuit, one carrier circuit, one modulation buffer circuit and a demodulator circuit, this receiving circuit provides one to drive signal, the carrier signal of this carrier circuit output certain frequency square wave, this modulation buffer circuit should drive signal and be modulated on this carrier signal and send by a signal isolating transformer, and this demodulator circuit demodulates an IGBT and drives signal and flow to one road IGBT driver element to drive one road IGBT.
This signal isolating transformer is the PCB flat surface transformer.
This carrier circuit comprises that a carrier generator drives with the carrier wave buffering that links to each other with this carrier generator, and the frequency of carrier wave is 500KHz-10MHz.
This carrier generator is made of a resistance R 1, a resistance R 2, a capacitor C 11, one integrated circuit unit U1-A and integrated circuit unit U1-B, and this integrated circuit unit U1-A and this integrated circuit unit U1-B are trigger.
This carrier wave buffering drives and is made of integrated circuit unit U1-C, integrated circuit unit U1-D, integrated circuit unit U1-E, integrated circuit unit U1-F and resistance R 3, and this integrated circuit unit U1-C, integrated circuit unit U1-D, integrated circuit unit U1-E and integrated circuit unit U1-F are trigger.
This modulation buffer circuit is to adopt the controlled switch of a pair of mutual symmetry that this driving signal is modulated on this carrier signal.
This demodulator circuit comprises a comparator, and wherein, the output of this modulation buffer circuit is delivered to an end of this comparator through full-wave rectification by the first bleeder circuit, and the other end of this comparator then connects a reference voltage.
Also comprise a public power unit, it has a first input end, one second input and an output, is a PWM common electric voltage and sends by this output in order to the voltage transformation that will obtain from this first input end and this second input; This switching power supply comprises that a first end is to provide a malleation, one second end to provide a negative pressure and a common port so that common level to be provided, wherein, the first end of this switching power supply links to each other with the first input end of this public power unit, and the second end of the output of this switching power supply links to each other with the second input of this public power unit; The driving power unit on every road has a power transformer, and an end of the former limit input of this power transformer links to each other with the output of this public power unit, the other end links to each other with the common port of this switching power supply.
This public power unit comprises a PWM control module, one first controlled switch and one second controlled switch; This PWM control module has one first control signal output and one second control signal output; This first controlled switch has a control end, one first switch terminals and a second switch end, and its control end links to each other with this first control signal output; This second controlled switch has a control end, one first switch terminals and a second switch end, and its control end links to each other with this second control signal output, and its first switch terminals links to each other with the second switch end of this first controlled switch; Wherein, the first switch terminals of this first controlled switch is the first input end of this public power unit, the second switch end of this second controlled switch is the second input of this public power unit, and the second switch end of this first controlled switch and the point that links to each other of the first switch terminals of this second controlled switch are the output of this public power unit.
This power transformer is the PCB flat surface transformer.
Compared with prior art, converter plant of the present utility model is modulated by high frequency carrier, and solution transfers to transmit the driving signal of IGBT again after flat surface transformer is isolated, and can guarantee effective control of IGBT.
Description of drawings
Fig. 1 is the structural representation of the IGBT driving power of prior art.
Fig. 2 is the structural representation of driving power part in the converter plant of the present utility model.
Fig. 3 is the structural representation that drives signal section in the converter plant of the present utility model.
Wherein, description of reference numerals is as follows: prior art-E switching power supply E1 switch transformer NP former limit winding Ncc assists other circuit power windings of winding Nqt ns1-ns6 IGBT driving power winding; The D1-D6 rectifier diode; The C1-C12 filter capacitor; UP1-UN1, VP1-VN1, WP1-WN1, UP2-UN2, VP2-VN2, WP2-WN2 6 road IGBT driving powers; Auxiliary other circuit power winding ns+ of winding Nqt of the utility model-E switching power supply E1 switch transformer NP former limit winding Ncc and ns-IGBT driving power winding com hold jointly; D1 and D2 rectifier diode; C1, C2, C3, C4 filter capacitor; GD public power unit U+ first input end U-the second input Vp output KZ PWM control module Q1 the first controlled switch Q2 the second controlled switch; The T1-T6 power transformer; The DB1-DB6 full-wave rectifying circuit; The JS receiving circuit; The ZB carrier circuit; TZJ modulates buffer circuit; The TL demodulator circuit.
Embodiment
Referring to Fig. 2 and Fig. 3, converter plant embodiment of the present utility model roughly comprises a switching power supply E, a public power unit GD, six tunnel driving power unit and six tunnel driving signal processing unit.Driving power unit, every road provides driving signal through isolation to drive one road IGBT for one road IGBT driver element provides working power, every road to drive signal processing unit for one road IGBT driver element.
This switching power supply E comprises a switch transformer E1, and the secondary of this switch transformer E1 comprises a winding, and this winding has two terminations and a centre cap; And one first halfwave rectifier unit and one second halfwave rectifier unit; One end of this first halfwave rectifier unit and the first output that one of two terminations of this winding link to each other, the other end is this switching power supply; Second output that another links to each other, the other end is this switching power supply of one end of this second halfwave rectifier unit and two terminations of this winding; This centre cap is the common port of this switching power supply.Particularly, the winding that this switch transformer E1 has has: former limit winding NP, auxiliary winding Ncc, secondary winding, other circuit power winding Nqt and IGBT driving power winding ns+ and ns-.Wherein, IGBT driving power winding ns+ and ns-respectively have an end to link together to consist of common end (also i.e. the common port of this a switching power supply) com of the secondary of this switch transformer E1, the other end of IGBT driving power winding ns+ consists of a first end (also i.e. the first end of this switching power supply) of the secondary of this switch transformer E1, and the other end of IGBT driving power winding ns-consists of one second end (also i.e. the second end of this switching power supply) of the secondary of this switch transformer E1.In the present embodiment, this switch transformer E1 is high frequency switch transformer.
This public power unit GD has a first input end U+, one second input U-and an output Vp, in order to obtaining a malleation and be transformed to a PWM common electric voltage and send by this output Vp from the negative pressure that this second input U-obtains from this first input end U+.Wherein, the first end of the secondary of this switch transformer E1 links to each other through the first input end U+ of one first halfwave rectifier unit with this public power unit GD.The second end of the secondary of this switch transformer E1 links to each other through the second input U-of one second halfwave rectifier unit with this public power unit GD.Particularly, this the first halfwave rectifier unit comprises one first rectifier diode D1 and two filter capacitor C1, C2, and the positive pole of this first rectifier diode D1 links to each other with the first end of the secondary of this switch transformer E1, negative pole links to each other with the first input end U+ of public power unit GD; This second halfwave rectifier unit comprises one second rectifier diode D2 and two filter capacitor C3, C4, and the negative pole of this second rectifier diode D2 links to each other with the second end of the secondary of this switch transformer E1, positive pole links to each other with the second input U-of public power unit GD.
This public power unit GD comprises a PWM control module KZ, one first controlled switch Q1 and one second controlled switch Q2.This PWM control module KZ is semiconductor device or the programming device such as microprocessor, and it can be by the pwm control signal of hardware or software output setting.This PWM control module KZ has one first control signal output and one second control signal output, and the signal that this first control signal output and this second control signal output provide is anti-phase.This first controlled switch Q1 has a control end, one first switch terminals and a second switch end, and its control end links to each other with this first control signal output, and its first switch terminals links to each other with first input end U+; This second controlled switch Q2 has a control end, one first switch terminals and a second switch end, its control end links to each other with this second control signal output, its first switch terminals links to each other with the second switch end of this first controlled switch, and its second switch end links to each other with the second input U-.The second switch end of this first controlled switch Q1 and the point that links to each other of the first switch terminals of this second controlled switch Q2 are the output Vp of this public power unit.In the present embodiment, this first controlled switch is the N-MOS pipe, and this second controlled switch is the P-MOS pipe.
Six road driving power unit can provide 6 road IGBT driving power UP1-UN1, VP1-VN1, WP1-WN1, UP2-UN2, VP2-VN2, WP2-WN2 to supply with 6 road IGBT drive circuit power supplys with correspondence and drive 6 road IGBT.The driving power unit on every road has a power transformer T1, T2, T3, T4, T5, T6, and an end of the former limit input of this power transformer T1, T2, T3, T4, T5, T6 links to each other with the output Vp of this public power unit GD, the other end links to each other with the common port com of this switching power supply.In the present embodiment, power transformer T1, the T2 of the driving power unit on every road, T3, T4, T5, T6 are the PCB flat surface transformer.The secondary correspondence of this power transformer T1, T2, T3, T4, T5, T6 links to each other with a full-wave rectifying circuit DB1, DB2, DB3, DB4, DB5, DB6, and then correspondence provides 6 road IGBT driving power UP1-UN1, VP1-VN1, WP1-WN1, UP2-UN2, VP2-VN2, WP2-WN2.Need to prove that pwm frequency signal is higher, transmitting under the equal energy situation that power transformer T1, T2, T3, T4, T5, the T6 volume can be less.
The driving signal processing unit on every road comprises a receiving circuit JS, a carrier circuit ZB, modulation buffer circuit TZJ and a demodulator circuit TL.Wherein, IGBT switching signal UE receives the input resistance R5 end of receiving circuit JS.Receiving circuit JS has output ka.Output ka links to each other with the first input end of modulation buffer circuit TZJ.Carrier circuit ZB has output za.Output za links to each other with the second input of modulation buffer circuit TZJ.Modulation buffer circuit TZJ has the first output kb.The first input end of the first output kb and demodulator circuit TL links to each other.Modulation buffer circuit TZJ has the second output zb.The second input of the second output zb and demodulator circuit TL links to each other.Demodulator circuit TL has output UH.This structure can be finished from IGBT switching signal UE and change IGBT driving signal UH into, and one the road drives signal UH can come corresponding driving one road IGBT in order to control one road IGBT drive circuit.
This receiving circuit JS has a switching signal input UE, a signal output part ka.Switching signal UE can be produced by microcontroller or integrated circuit, discrete electronic circuit.Switching signal UE inputs to the base stage of switching tube Q13 by resistance R 5, carries out the switching signal conversion through resistance R 6, resistance R 7, resistance R 8, resistance R 9, diode D1, switching tube Q12, switching tube Q15 again, can pass through capacitor C 15, capacitor C 16 couplings are exported.Wherein, switching tube Q13 is the NPN signal pipe, and also available N-MOS power tube substitutes, and switching tube Q12 is the P-MOS power tube, and switching tube Q15 is the N-MOS power tube.
This carrier circuit ZB has a signal output part za.It comprises resistance R 1, resistance R 2, resistance R 3, capacitor C 11 and integrated circuit U1.Wherein, resistance R 1, resistance R 2, capacitor C 11, integrated circuit unit U1-A, integrated circuit unit U1-B consist of carrier generator, and integrated circuit unit U1-C, integrated circuit unit U1-D, integrated circuit unit U1-E, integrated circuit unit U1-F and resistance R 3 consist of the carrier wave buffering and drive.The output of carrier generator links to each other with the input that the carrier wave buffering drives.In the present embodiment, integrated circuit U1 is cmos semiconductor trigger chip, in other embodiments, also can be microcontroller or integrated circuit, discrete electronic circuit.
This modulation buffer circuit TZJ has a first signal input ka, a secondary signal input za, a first signal output kb and a secondary signal output zb.Wherein, switching tube Q10, Q11 are the controlled switch of a pair of mutual symmetry, and in the present embodiment, switching tube Q10 is the N-MOS power tube, and switching tube Q11 is the P-MOS power tube.Capacitor C 17, capacitor C 18 are signal coupling electric capacity.This kind circuit structure, can be frequency that the signal of the first signal input ka of 1KHz-20KHz is modulated on the high frequency carrier za that frequency is 500KHz-10MHz, form modulating wave rx, modulating wave rx is transferred to isolating transformer TR1 secondary through isolating transformer TR1, forms to reconcile ripple tx.In the present embodiment, isolating transformer TR1 is PCB plane signal transformer, and Transformer Winding is to be made in the flat conductive leads of applying on the copper printed circuit board, multi-layer PCB is clipped between the magnetic core, do not have the winding skeleton, frequency of modulated wave is higher, and under equal conditions volume of transformer is less.
This demodulator circuit TL has a first signal input kb, and its first signal output kb with modulation buffer circuit TZJ links to each other; One secondary signal input zb, its secondary signal output zb with signal modulation buffer circuit TZJ links to each other; And a signal output part UH, signal UH is that IGBT drives signal.Wherein, diode D2, D3, D4 and D5 consist of full-wave rectification, resistance R 10, resistance R 11, resistance R 12, capacitor C 19 provide signal u2+ for the positive input terminal of integrated circuit unit U2-A, and the bleeder circuit that resistance R 13 and resistance R 14 consist of provides a reference voltage u2-for the negative input end of integrated circuit unit U2-A.In the present embodiment, integrated circuit unit U2-A is voltage comparator, as u2+〉during u2-, UH is output as the IGBT driving switch signal of high level; When u2+<u2-, UH is output as low level IGBT driving switch signal.
Compared with prior art, converter plant of the present utility model is by setting up a public power unit GD between switching power supply and each driving power unit, can make each driving power unit adopt same input, thereby can improve the consistency of each driving power unit, increase reliability, and greatly reduce the complexity of switch transformer, and then reduce the volume of switch transformer E1; In addition, do isolated drive circuit by selecting the PCB flat surface transformer, can reduce volume, reduce cost; And, come switching signal UE is modulated by setting up carrier circuit ZB, obtain driving signal UH by carrying out demodulation by demodulator circuit TL correspondence after isolating again, can reduce the interference that each road drives signal, significantly improve IGBT and driven signal quality, increased reliability.
Need to prove that this driving signal processing unit can also amplify processing to driving signal UH.
Foregoing; it only is preferred embodiment of the present utility model; be not be used to limiting embodiment of the present utility model; those of ordinary skills are according to main design of the present utility model and spirit; protection range of the present utility model can carry out very easily corresponding flexible or modification, so should be as the criterion with the desired protection range of claims.

Claims (10)

1. converter plant, it comprises a switching power supply, six tunnel driving power unit and six tunnel driving signal processing unit, driving power unit, every road provides working power for one road IGBT driver element, every road drives signal processing unit provides driving signal through isolation to drive one road IGBT for one road IGBT driver element, it is characterized in that, the driving signal processing unit on every road comprises a receiving circuit, one carrier circuit, one modulation buffer circuit and a demodulator circuit, this receiving circuit provides one to drive signal, the carrier signal of this carrier circuit output certain frequency square wave, this modulation buffer circuit should drive signal and be modulated on this carrier signal and send by a signal isolating transformer, and this demodulator circuit demodulates an IGBT and drives signal and flow to one road IGBT driver element to drive one road IGBT.
2. according to converter plant claimed in claim 1, it is characterized in that this signal isolating transformer is the PCB flat surface transformer.
3. according to converter plant claimed in claim 1, it is characterized in that this carrier circuit comprises that a carrier generator drives with the carrier wave buffering that links to each other with this carrier generator, the frequency of carrier wave is 500KHz-10MHz.
4. according to converter plant claimed in claim 3, it is characterized in that, this carrier generator is made of a resistance R 1, a resistance R 2, a capacitor C 11, one integrated circuit unit U1-A and integrated circuit unit U1-B, and this integrated circuit unit U1-A and this integrated circuit unit U1-B are trigger.
5. according to converter plant claimed in claim 3, it is characterized in that, this carrier wave buffering drives and is made of integrated circuit unit U1-C, integrated circuit unit U1-D, integrated circuit unit U1-E, integrated circuit unit U1-F and resistance R 3, and this integrated circuit unit U1-C, integrated circuit unit U1-D, integrated circuit unit U1-E and integrated circuit unit U1-F are trigger.
6. according to converter plant claimed in claim 1, it is characterized in that this modulation buffer circuit is to adopt the controlled switch of a pair of mutual symmetry that this driving signal is modulated on this carrier signal.
7. according to converter plant claimed in claim 1, it is characterized in that this demodulator circuit comprises a comparator, wherein, the output of this modulation buffer circuit is delivered to an end of this comparator through full-wave rectification by the first bleeder circuit, and the other end of this comparator then connects a reference voltage.
8. according to converter plant claimed in claim 1, it is characterized in that, also comprise a public power unit, it has a first input end, one second input and an output, is a PWM common electric voltage and sends by this output in order to the voltage transformation that will obtain from this first input end and this second input; This switching power supply comprises that a first end is to provide a malleation, one second end to provide a negative pressure and a common port so that common level to be provided, wherein, the first end of this switching power supply links to each other with the first input end of this public power unit, and the second end of the output of this switching power supply links to each other with the second input of this public power unit; The driving power unit on every road has a power transformer, and an end of the former limit input of this power transformer links to each other with the output of this public power unit, the other end links to each other with the common port of this switching power supply.
9. according to converter plant claimed in claim 8, it is characterized in that this public power unit comprises a PWM control module, one first controlled switch and one second controlled switch; This PWM control module has one first control signal output and one second control signal output; This first controlled switch has a control end, one first switch terminals and a second switch end, and its control end links to each other with this first control signal output; This second controlled switch has a control end, one first switch terminals and a second switch end, and its control end links to each other with this second control signal output, and its first switch terminals links to each other with the second switch end of this first controlled switch; Wherein, the first switch terminals of this first controlled switch is the first input end of this public power unit, the second switch end of this second controlled switch is the second input of this public power unit, and the second switch end of this first controlled switch and the point that links to each other of the first switch terminals of this second controlled switch are the output of this public power unit.
10. according to converter plant claimed in claim 8, it is characterized in that this power transformer is the PCB flat surface transformer.
CN 201320302569 2013-05-29 2013-05-29 Frequency conversion device Expired - Lifetime CN203243214U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104682678A (en) * 2014-12-26 2015-06-03 深圳青铜剑电力电子科技有限公司 Isolation power supply for IGBT (Insulated Gate Bipolar Transistor) driving
CN109462322A (en) * 2018-10-30 2019-03-12 上海沪工焊接集团股份有限公司 A kind of isolation drive with power supply two-in-one circuit is isolated

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104682678A (en) * 2014-12-26 2015-06-03 深圳青铜剑电力电子科技有限公司 Isolation power supply for IGBT (Insulated Gate Bipolar Transistor) driving
CN104682678B (en) * 2014-12-26 2017-08-11 深圳青铜剑科技股份有限公司 A kind of insulating power supply of IGBT drivings
CN109462322A (en) * 2018-10-30 2019-03-12 上海沪工焊接集团股份有限公司 A kind of isolation drive with power supply two-in-one circuit is isolated

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