CN203193586U - Square wave generation circuit - Google Patents
Square wave generation circuit Download PDFInfo
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- CN203193586U CN203193586U CN 201320157613 CN201320157613U CN203193586U CN 203193586 U CN203193586 U CN 203193586U CN 201320157613 CN201320157613 CN 201320157613 CN 201320157613 U CN201320157613 U CN 201320157613U CN 203193586 U CN203193586 U CN 203193586U
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- semiconductor switch
- square wave
- pulse
- generation circuit
- wave generation
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Abstract
The utility model discloses a square wave generation circuit which comprises a high voltage DC source, an energy storage circuit, a semiconductor switch, a charging resistor and a pulse output terminal for a device under test. Through a charging resistor in parallel connection with the pulse output terminal and reasonable selection of the resistance of the charging resistor, the charging time of the junction capacitor of a semiconductor switch is shortened, and square wave impulses with steep edges are lowered. Through control of the closing time of the semiconductor switch, high energy square wave impulses, of which the width is adjustable and the amplitude is flat, can be output, and pulse adjustment in a wide range from the nanosecond to millisecond level can be realized. The square wave generation circuit is wide in pulse adjusting scope, flat in amplitude, convenient for control and reliable in circuit.
Description
[technical field]
The utility model belongs to electromagnetic compatibility (EMC) fields of measurement, is specifically related to a kind of square wave generation circuit.
[background technology]
The anti-pulse ability of electronic equipment is to estimate the important indicator of its performance, pulse voltage is a kind of typical surge pulse, this evaluation of indexes is normally produced high-voltage pulse with square-wave generator, be carried in the two ends that are subjected to examination equipment (EUT), be subjected to the examination equipment whether can operate as normal with investigation.
Existing high-voltage square-wave generation circuit comprises high voltage direct current source, RC accumulator, semiconductor switch S1, pulse output end as shown in Figure 1.In order to produce high-octane square-wave pulse, require switch can tolerate the high pressure of thousands of volts of moment, hundreds of amperes big electric current, and the response time of switch closure and disconnection will be the microsecond level at least, rising edge and the trailing edge that could guarantee pulse square wave are precipitous, and this high request generally has only high-power semiconductor switch to satisfy.But the junction capacitance among the semiconductor switch S1 makes it in the moment that disconnects, and is tried the voltage at equipment two ends and can't undergo mutation; Storage capacitor C1 stands the junction capacitance charging that examination equipment is given semiconductor switch S1, and until being full of, switch S 1 could really turn-off to produce the square wave trailing edge.The rate of change of square wave trailing edge is identical with the charge rate of junction capacitance, and the charge rate of junction capacitance depends on junction capacitance and the product size of being tried equipment equivalent resistance RL, and product is more big, and the charging interval of junction capacitance is more long, trailing edge is more mild, only can export broad pulse; Otherwise product is more little, and the charging interval of junction capacitance is more short, and trailing edge is more precipitous, exportable burst pulse, and namely the trailing edge of square wave is tried the restriction of equipment equivalent resistance RL resistance size.
Generally speaking, the junction capacitance of semiconductor switch is the nF level, and is tried the equivalent resistance R of equipment
LMay be very big, the charging interval of junction capacitance is very long, causes the square wave trailing edge to descend slowly, thereby can only the bigger pulse of output pulse width.For example, if tried equipment equivalent resistance R
LGreater than 10k Ω, then the trailing edge of square wave will be at least greater than 10 μ s, tried equipment end and can't be obtained 1 μ s or square wave faster, the pulse duration of its output is very big, and amplitude unevenness, as shown in Figure 2, can not satisfy the requirement that narrow square wave that some electronic equipment needs utilizes precipitous edge is tested.
Therefore, existing technical scheme generally only can realize high-octane wide square-wave pulse, and the amplitude unevenness that realizes; Even exist some can realize the technical scheme of narrow square wave, as publication No. be CN101795127A patent disclosure " a kind of high-voltage square-wave pulse generator and produce the method for high-voltage square-wave pulse ", not only implementation and apparatus structure complexity, and the cost height, can not realize high-octane square-wave pulse, the adjustable scope of square width is narrower.
[utility model content]
At above-mentioned the deficiencies in the prior art, the utility model aims to provide the adjustable quick high-energy square wave generation circuit of a kind of pulse duration, the exportable nanosecond of this square wave generation circuit is to the wide region high-energy square wave of Millisecond, and have advantages such as pulse regulation wide ranges, amplitude is smooth, control is convenient, and circuit is reliable.
A kind of square wave generation circuit described in the utility model is achieved through the following technical solutions.A kind of square wave generation circuit is characterized in that, comprises high voltage direct current source, accumulator, semiconductor switch, charging resistor and is used for the pulse output end that loading is tried equipment, and accumulator comprises current-limiting resistance and storage capacitor; High voltage direct current source, current-limiting resistance and storage capacitor constitute the loop, and storage capacitor, semiconductor switch and the examination equipment that is subjected to that is carried on the pulse output end constitute the loop; Described charging resistor and pulse output end are in parallel, and described charging resistor is variable resistor or fixed resistance.
The concrete job step of the utility model is as follows:
The first step: will be tried device loads to pulse output end, charge to storage capacitor by current-limiting resistance in the high voltage direct current source; Meanwhile, because there is junction capacitance in semiconductor switch, the high voltage direct current source charges for the junction capacitance of semiconductor switch by being subjected to examination equipment, and after charging finished, the voltage at semiconductor switch junction capacitance two ends equated with the voltage at storage capacitor two ends.Need to prove, the resistance of current-limiting resistance is generally all very big, thereby the time constant in the loop that is made of high voltage direct current source, current-limiting resistance and storage capacitor is bigger, thereby charge to storage capacitor by current-limiting resistance in the high voltage direct current source, charging interval is longer, after the storage capacitor charging finishes, it can be considered as power supply.
Second step: closed semiconductor switch, electric charge on the semiconductor switch junction capacitance is fast released, the high pressure at storage capacitor two ends can directly, transient state be loaded on the two ends of the equipment of being tried, and produce the precipitous rising edge of square wave, and the voltage magnitude of rising edge equals the voltage at storage capacitor two ends; Closing time by the control semiconductor switch can realize the control of high-voltage pulse width;
The 3rd step: disconnect semiconductor switch, the existence of junction capacitance makes it in the moment that disconnects in the semiconductor switch, is tried the voltage at equipment two ends and can't undergo mutation; Be subjected to examination equipment and charging resistor be in parallel the back, again with the semiconductor switch junction capacitance composition charge circuit that is in series, the storage capacitor that is equivalent to power supply charges for the junction capacitance of semiconductor switch by being subjected to examination equipment and charging resistor, until being full of, semiconductor switch could really disconnect, and the charging interval is decided by the time constant of charge circuit.Charging resistor be subjected to examination equipment in parallel after all-in resistance less than the resistance of its arbitrary branch road, the resistance of choose reasonable charging resistor can reduce charging interval of charge circuit, accelerates the charge rate of junction capacitance, produces precipitous trailing edge.For example can be with trailing edge control in nanosecond (ns) level, can produce nanosecond (ns) level or square wave faster.
The utility model passes through at pulse output end charged in parallel resistance, resistance by the choose reasonable charging resistor, can regulate the time constant of the charge circuit of charging resistor and semiconductor switch junction capacitance composition, accelerate the charge rate of semiconductor switch junction capacitance, thereby realize the precipitous square-wave pulse of trailing edge; By the closing time of Synchronization Control semiconductor switch, get final product the high-energy square-wave pulse that output pulse width is adjustable and amplitude is smooth in addition, pulse duration can realize the wide region adjusting from nanosecond to Millisecond.
The technical solution of the utility model can further limit by the following technical programs:
As preferably, the described time constant of the discharge loop that examination equipment, charging resistor and storage capacitor form that is subjected to should be greater than the square-wave pulse width of setting.In above-mentioned second step, namely behind the closed semiconductor switch, the electric charge on the semiconductor switch junction capacitance is fast released, be subjected to examination equipment and charging resistor be in parallel the back, again with the storage capacitor composition discharge loop that is in series; The pulse of output is actually discharge curve from initial time, the voltage of section sometime, i.e. Shu Chu pulse is the part that discharge curve is carved into during from t=0 sometime section.Therefore, the time period of the output pulse width here should be less than the time constant of discharge loop, namely charging resistor be subjected to examination equipment in parallel after all-in resistance and the product of storage capacitor should be greater than this square-wave pulse width; In actual applications, in order to ensure obtaining the smooth square-wave pulse of amplitude, select the product of all-in resistance in parallel and storage capacitor much larger than the square-wave pulse width usually, make that the square-wave pulse amplitude is smooth.For example: being subjected to the time constant of the discharge loop that all-in resistance after examination equipment, the charging resistor parallel connection and storage capacitor form is 10ms, and the pulse duration of pre-output is 1 μ s, can guarantee the square-wave pulse that output amplitude is smooth.
As preferably, the described time constant of the charge circuit that examination equipment, charging resistor and semiconductor switch junction capacitance form that is subjected to should be less than the time of the pulse trailing edge of setting.In above-mentioned the 3rd step, namely disconnect semiconductor switch after because the existence of semiconductor switch junction capacitance causes it not disconnect at once, need wait until after junction capacitance is full of electricity and could disconnect; Be subjected to examination equipment and charging resistor be in parallel the back, again with the semiconductor switch junction capacitance composition charge circuit that is in series, charge circuit charges to junction capacitance, the time of charging has determined the precipitous degree of pulse trailing edge, charging interval is short, the pulse trailing edge is precipitous, charging interval is long, the pulse trailing edge is mild, and the length in charging interval is decided by the time constant of charge circuit.Therefore, for the trailing edge that guarantees square-wave pulse is precipitous, should reduce the time constant of charge circuit, namely charging resistor be subjected to examination equipment in parallel after all-in resistance and the product of semiconductor switch junction capacitance should be less than this square-wave pulse fall time.In the practical application, the product of selecting all-in resistance in parallel and semiconductor switch junction capacitance usually makes voltage descend fast much smaller than square-wave pulse fall time, produces precipitous trailing edge.For example, being subjected to the time constant of the charge circuit that all-in resistance after examination equipment, the charging resistor parallel connection and semiconductor switch junction capacitance form is 20ns, and the pulse duration of pre-output is 1 μ s, can guarantee to export the precipitous square-wave pulse of trailing edge.
As preferably, comprise the auxiliary current-limiting resistance of connecting with semiconductor switch, described auxiliary current-limiting resistance and storage capacitor, semiconductor switch, charging resistor are formed the loop.Here, auxiliary current-limiting resistance has two effects: one is for output loop provides metering function, prevents that the output short circuit from damaging semiconductor switch; Its two, play damping action, because having parasitic capacitance and inductance in the circuit, but the higher-order of oscillation that causes in the suppressor pulse uphill process.The auxiliary current-limiting resistance here also can be variable resistor.Behind the auxiliary current-limiting resistance, the voltage of pulse output end should be the voltage at storage capacitor two ends through assisting current-limiting resistance and being tried the equipment voltage after partial in the loading.It is pointed out that auxiliary current-limiting resistance can be arranged on the circuit between accumulator and the semiconductor switch, perhaps be arranged on the circuit between semiconductor switch and the pulse output end that the position arranges flexibly.
As a kind of technical scheme, comprise auxiliary charging resistance, described auxiliary charging resistance and pulse output end are in parallel.The auxiliary charging resistance here can be used for limiting the longest trailing edge of pulse.For example, resistance as if the equivalent resistance that is tried equipment is bigger, the adjustable range of charging resistor is limited, can select the less auxiliary charging resistance of resistance for use, make to be subjected to the resistance total in parallel of examination equipment, charging resistor and auxiliary charging resistance less, thereby guarantee in the 3rd above-mentioned step, after disconnecting semiconductor switch, the time constant of charging circuit is less, realizes limiting the purpose of long pulse trailing edge.
As preferably, comprise the charge switch of connecting with charging resistor, described charge switch is power relay.Charge switch is according to pulse duration, selects closed or disconnects charging resistor, to guarantee square width nanosecond (ns) level or when narrower, trailing edge is precipitous; Square width Millisecond (ms) or when longer, pulse amplitude is smooth.
As preferably, above-mentioned semiconductor switch is the unipolarity high power semi-conductor discharge switch that reaches nanosecond the response time, its closing time by nanosecond to hundreds of Milliseconds, can produce rising edge, trailing edge is precipitous, pulse duration to the continuously adjustable square-wave pulse of Millisecond wide region, has characteristics such as working stability, long service life and noise are little by nanosecond.
As preferably, described semiconductor switch is insulated gate bipolar transistor or field of electric force effect transistor.Characteristics such as insulated gate bipolar transistor abbreviates IGBT pipe as, and that the IGBT pipe has is high pressure resistant, capacity is big, driving power is little, switching speed is fast and the safety operation area is wideer; The field of electric force effect transistor abbreviates MOSFET pipe as, characteristics such as have the input impedance height, driving power is little, drive circuit is simple, switching speed is fast, operating frequency is high, Heat stability is good, no second breakdown problem, safety operation area are wideer.Other semiconductor switch with advantages such as high pressure tolerance, switching speed are fast also can be suitable for.
As preferably, described high voltage direct current source is adjustable unipolarity high voltage direct current source.The high voltage direct current source is adjustable, thereby the square-wave pulse of exportable adjustable amplitude value is applied widely, the cost performance height.
In sum, the utility model is selected rational charging resistor resistance by charged in parallel resistance on pulse output end, can significantly shorten the charging interval of semiconductor switch junction capacitance, solves the trailing edge retardation problem, thereby realizes the precipitous square-wave pulse of trailing edge; Simultaneously by controlling the closing time of semiconductor switch, get final product the high-energy square-wave pulse that output pulse width is adjustable and amplitude is smooth, can realize the wide region pulse regulation from nanosecond to Millisecond, have advantages such as pulse regulation wide ranges, amplitude is smooth, control is convenient, and circuit is reliable.
[description of drawings]
Accompanying drawing 1 is the schematic diagram of existing square wave generation circuit;
Accompanying drawing 2 is square wave schematic diagrames that existing square wave generation circuit produces;
Accompanying drawing 4 is square wave schematic diagrames that embodiment 1 produces;
Accompanying drawing 5 is schematic diagrames of embodiment 2;
1-high voltage direct current source; The 2-accumulator; The 2-1-current-limiting resistance; The 2-2-storage capacitor; The 3-semiconductor switch; The 4-charging resistor; The 5-pulse output end; 6-is subjected to examination equipment; The 7-charge switch; 8-assists current-limiting resistance; 9-auxiliary charging resistance.
[embodiment]
As shown in Figure 3, present embodiment discloses a kind of square wave generation circuit, comprise high voltage direct current source 1, accumulator 2, semiconductor switch 3, charging resistor 4, pulse output end 5, accumulator 2 comprises current-limiting resistance 2-1 and storage capacitor 2-2, be carried on the pulse output end 5 by examination equipment 6; High voltage direct current source 1, current-limiting resistance 2-1 and storage capacitor 2-2 constitute the loop, and storage capacitor 2-2, semiconductor switch 3 and the examination equipment 6 that is subjected to that is carried on the pulse output end 5 constitute the loop; Charging resistor 4 is in parallel with pulse output end 5, and charging resistor 4 is variable resistor.
The rising edge of the square-wave pulse that this embodiment produces and trailing edge as shown in Figure 4, the concrete course of work is as follows:
Square wave rising edge forming process: disconnect semiconductor switch 3.Charging is given storage capacitor 2-2 by current-limiting resistance 2-1 in high voltage direct current source 1, after storage capacitor 2-2 is full of electricity, also has been full of electricity on semiconductor switch 3 junction capacitance, identical on the voltage on semiconductor switch 3 junction capacitance and the storage capacitor 2-2; Closed semiconductor switch 3 then, electric charge on semiconductor switch 3 junction capacitance is fast released, output high-voltage pulse square wave rising edge, the voltage magnitude of rising edge equals the voltage at storage capacitor two ends, and the voltage magnitude of rising edge is up to 8000～9000V as can be seen from Figure 4.Smooth in order to guarantee the square wave amplitude, the resistance of choose reasonable charging resistor 4 requires to be subjected to the time constant of the discharge loop that equivalent resistance, charging resistor 4 and the storage capacitor 2-2 of examination equipment 6 form to be greater than the square wave output pulse width.Closing time by the control semiconductor switch can realize the control of high-voltage pulse width;
Square wave trailing edge forming process: disconnect semiconductor switch 3, the existence of junction capacitance makes its moment that disconnects in the semiconductor switch 3, can't undergo mutation by the voltage at examination equipment 6 two ends, storage capacitor 2-2 is by charging resistor 4 and be subjected to examination equipment 6 to charge for the junction capacitance of semiconductor switch 3, until being full of, semiconductor switch 3 could really turn-off.In order to guarantee that trailing edge is precipitous, the resistance of choose reasonable charging resistor 4, make the time constant of the charge circuit that junction capacitance is formed in equivalent resistance, charging resistor 4 and the semiconductor switch 3 be subjected to examination equipment 6 much smaller than square wave fall time, significantly reduce the time constant of charge circuit, thereby accelerate the charge rate of junction capacitance greatly, produce precipitous trailing edge.As shown in Figure 4, the pulse duration in the present embodiment is 1 μ s, is about 0.2 μ s the fall time of high-voltage pulse trailing edge, and trailing edge is precipitous.
As shown in Figure 5, as different from Example 1, present embodiment comprises charge switch 7 and auxiliary current-limiting resistance 8, and charge switch 7 is power relay and connects with charging resistor 4; Auxiliary current-limiting resistance 8 is connected with semiconductor switch 3, and auxiliary current-limiting resistance 8 is formed the loop with storage capacitor 2-2, semiconductor switch 3, charging resistor 4, and the charging resistor 4 here is fixed resistance.
The voltage of supposing storage capacitor 2-2 two ends is U
0, the resistance of charging resistor 4 is R
4, the equivalent resistance that is subjected to examination equipment 6 is R
6, the resistance of auxiliary current-limiting resistance 8 is R
8, then be carried in the voltage U that is subjected to examination equipment 6 two ends of pulse output end 5
6For:
Auxiliary current-limiting resistance 8 is to provide metering function for output loop on the one hand, prevent that the output short circuit from damaging semiconductor switch 3, behind the auxiliary current-limiting resistance 8, the voltage of pulse output end 5 should be the voltage at storage capacitor 2-2 two ends through auxiliary current-limiting resistance 8 voltage after partial in the loading.In addition, auxiliary current-limiting resistance 8 can also play damping action, because having parasitic capacitance and inductance in the circuit, but the higher-order of oscillation that causes in the suppressor pulse uphill process.
As shown in Figure 6, as different from Example 2, the charging resistor 4 in the present embodiment is variable resistor, but also comprises limiting the auxiliary charging resistance 9 of long trailing edge of pulse, and auxiliary charging resistance 9 is in parallel with pulse output end 5.
The resistance of the equivalent resistance that is subjected to examination equipment 6 in the present embodiment is bigger, the adjustable range of charging resistor 4 is limited, select the less auxiliary charging resistance 9 of resistance for use, making is subjected to the resistance total in parallel of examination equipment 6, charging resistor 4 and auxiliary charging resistance 9 less, thereby the charging circuit that guarantees semiconductor switch 3 junction capacitance, charging resistor 4, auxiliary charging resistance 9 and constituted by the equivalent resistance of examination equipment 6, has less time constant, determine the longest trailing edge time of output pulse, obtain the precipitous output pulse of trailing edge.
Claims (10)
1. square wave generation circuit, it is characterized in that, comprise high voltage direct current source (1), accumulator (2), semiconductor switch (3), charging resistor (4) and be used for loading being subjected to the pulse output end (5) of examination equipment (6), accumulator (2) comprises current-limiting resistance (2-1) and storage capacitor (2-2); High voltage direct current source (1), current-limiting resistance (2-1) and storage capacitor (2-2) constitute the loop, and storage capacitor (2-2), semiconductor switch (3) and the examination equipment (6) that is subjected to that is carried on the pulse output end (5) constitute the loop; Described charging resistor (4) is in parallel with pulse output end (5), and charging resistor (4) is variable resistor or fixed resistance.
2. a kind of square wave generation circuit as claimed in claim 1 is characterized in that, the described time constant of the discharge loop of examination equipment (6), charging resistor (4) and storage capacitor (2-2) composition that is subjected to should be greater than the square-wave pulse width of setting.
3. a kind of square wave generation circuit as claimed in claim 1 is characterized in that, the described time constant of the charge circuit of examination equipment (6), charging resistor (4) and semiconductor switch (3) junction capacitance composition that is subjected to should be less than the time of the pulse trailing edge of setting.
4. a kind of square wave generation circuit as claimed in claim 1, it is characterized in that, comprise the auxiliary current-limiting resistance (8) of connecting with semiconductor switch (3), described auxiliary current-limiting resistance (8) is formed the loop with storage capacitor (2-2), semiconductor switch (3), charging resistor (4).
5. a kind of square wave generation circuit as claimed in claim 4, it is characterized in that, described auxiliary current-limiting resistance (8) is arranged on the circuit between accumulator (2) and the semiconductor switch (3), perhaps is arranged on the circuit between semiconductor switch (3) and the pulse output end (5).
6. a kind of square wave generation circuit as claimed in claim 1 is characterized in that, comprises auxiliary charging resistance (9), and described auxiliary charging resistance (9) is in parallel with pulse output end (5).
7. a kind of square wave generation circuit as claimed in claim 1 is characterized in that, comprises the charge switch (7) of connecting with charging resistor (4), and described charge switch (7) is power relay.
8. a kind of square wave generation circuit as claimed in claim 1 is characterized in that, described semiconductor switch (3) reaches the unipolarity high power semi-conductor discharge switch of nanosecond for the response time.
9. as claim 1 or 8 described a kind of square wave generation circuit, it is characterized in that described semiconductor switch (3) is insulated gate bipolar transistor or field of electric force effect transistor.
10. a kind of square wave generation circuit as claimed in claim 1 is characterized in that, described high voltage direct current source (1) is adjustable unipolarity high voltage direct current source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320157613 CN203193586U (en) | 2013-03-27 | 2013-03-27 | Square wave generation circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320157613 CN203193586U (en) | 2013-03-27 | 2013-03-27 | Square wave generation circuit |
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| Publication Number | Publication Date |
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| CN203193586U true CN203193586U (en) | 2013-09-11 |
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| CN 201320157613 Withdrawn - After Issue CN203193586U (en) | 2013-03-27 | 2013-03-27 | Square wave generation circuit |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103236829A (en) * | 2013-03-27 | 2013-08-07 | 杭州远方仪器有限公司 | Square wave generating circuit |
| CN105291523A (en) * | 2015-10-30 | 2016-02-03 | 苏州天擎电子通讯有限公司 | Photosensitive color changing plastic mobile phone shell |
| CN111289940A (en) * | 2020-03-30 | 2020-06-16 | 云南电网有限责任公司电力科学研究院 | Step delay-based direct-current voltage mutual inductance transient characteristic testing method |
-
2013
- 2013-03-27 CN CN 201320157613 patent/CN203193586U/en not_active Withdrawn - After Issue
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103236829A (en) * | 2013-03-27 | 2013-08-07 | 杭州远方仪器有限公司 | Square wave generating circuit |
| CN103236829B (en) * | 2013-03-27 | 2016-03-09 | 杭州远方仪器有限公司 | A kind of square wave circuit for generating |
| CN105291523A (en) * | 2015-10-30 | 2016-02-03 | 苏州天擎电子通讯有限公司 | Photosensitive color changing plastic mobile phone shell |
| CN111289940A (en) * | 2020-03-30 | 2020-06-16 | 云南电网有限责任公司电力科学研究院 | Step delay-based direct-current voltage mutual inductance transient characteristic testing method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20130911 Effective date of abandoning: 20160309 |
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| C25 | Abandonment of patent right or utility model to avoid double patenting |