CN203178122U - High-purity gallium separation device - Google Patents
High-purity gallium separation device Download PDFInfo
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- CN203178122U CN203178122U CN 201320176527 CN201320176527U CN203178122U CN 203178122 U CN203178122 U CN 203178122U CN 201320176527 CN201320176527 CN 201320176527 CN 201320176527 U CN201320176527 U CN 201320176527U CN 203178122 U CN203178122 U CN 203178122U
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- separation device
- chlorination
- tripping device
- purity gallium
- hydrogen chloride
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Abstract
The utility model discloses a high-purity gallium separation device, and aims to provide the high-purity gallium separation device. The high-purity gallium separation device comprises a silicon-controlled electric furnace, a hydrogen chloride generation flask, a chlorination separation device, a controller and a thermocouple, and is characterized in that a crucible is arranged in the chlorination separation device and is communicated with a hydrogen chloride generator through a connection pipe and a washing bottle; the chlorination separation device is communicated with a water pump; the silicon-controlled electric furnace and the thermocouple are respectively connected with the controller through wires; the chlorination separation device is a sandwich type device made of high-purity quartz. The high-purity gallium separation device is mainly used for separating a high-purity gallium base body.
Description
Technical field
The present invention relates to a kind of tripping device, relate in particular to a kind of high purity gallium tripping device.
Background technology
High purity gallium is to make semiconductor gallium arsenide, gallium phosphide, germanium semiconductor doped chemical; Pure gallium and acolite thereof can be made the heat exchange medium of nuclear reaction, and the inserts of pyrometer is made two catalyst for esterification in the organic reaction.In recent years, along with OLED, namely Organic Light Emitting Diode (Organic Light-Emitting Diode) is called organic electric laser again and shows (Organic Electroluminesence Display, OELD) fast development has further promoted the demand of high purity gallium.
The at present main using plasma spectrometer (ICP-OES) of the detection of high purity gallium, plasma mass spectrograph (ICP-MS), glow discharge mass spectrometry instrument instruments such as (GD-MS) detect, because the sensitivity of ICP-OES is not high, to high purity gallium 6N(6 9 particularly) above gallium is helpless; GD-MS is because the expensive and few analysis cost height of equipment is unsuitable for the production control demand; And ICP-MS is owing to have high sensitivity and the moderate demand that has satisfied most of production, trade, user of analysis cost, more and more come into one's own, but ICP-MS is the high matrix sample of ability not, must take certain means to remove matrix and only stays impurity element and measure at ICP-MS.
The utility model is that a kind of device of design separates the high purity gallium matrix and stays impurity element, has and separates and inrichment.
Summary of the invention
The purpose of this utility model provides a kind of high purity gallium tripping device, by this device, utilizes the different muriatic boiling points with impurity of matrix gallium different, keeps uniform temperature, and the matrix gallium is removed with gallium trichloride, and impurity stays, and measures with ICP-MS after acid is molten.
For achieving the above object, technical solution of the present utility model is: a kind of high purity gallium tripping device, comprise controllable silicon electric furnace, hydrogen chloride generation flask, chlorination tripping device, controller and thermopair, it is characterized in that: in the described chlorination tripping device 8, be provided with crucible 9, this crucible is communicated with hydrogen chloride generator 2 by connecting pipe 5, wash bottle 6, and chlorination tripping device 8 is also taken out 11 with water and is communicated with, and controllable silicon electric furnace 1,12 all is connected with controller 13 by lead with thermopair 10.
Described chlorination tripping device 8 is sandwich-type devices of being made by high purity quartz.
The beneficial effects of the utility model are: velocity of separation is fast, and matrix is removed clean, and impurity keeps fully, and repeatability is good, and is simple to operate etc.
Description of drawings
Fig. 1 is structural representation of the present utility model
Wherein: 1-controllable silicon electric furnace; 2-hydrogen chloride generation flask; 3-tap funnel; 4-upward flasks; 5-connecting pipe; 6-Drexel bottle; 7-chlorination cyclone cover; 8-chlorination tripping device; 9-monkey; 10-thermopair; 11-water is taken out; 12-controllable silicon electric furnace; 13-controller.
Embodiment
Describe the specific embodiment of the present invention in detail below in conjunction with accompanying drawing.
Referring to Fig. 1, controllable silicon electric furnace, hydrogen chloride generation flask, chlorination tripping device, controller and the thermopair of comprising of the present utility model, it is characterized in that: in the described chlorination tripping device 8, be provided with crucible 9, this crucible is communicated with hydrogen chloride generator 2 by connecting pipe 5, wash bottle 6, chlorination tripping device 8 is also taken out 11 with water and is communicated with, and controllable silicon electric furnace 1,12 all is connected with controller 13 by lead with thermopair 10.
Described chlorination tripping device 8 is sandwich-type devices of being made by high purity quartz.
Concrete detachment process of the present utility model is:
The first step is poured high-purity concentrated hydrochloric acid in the hydrogen chloride generator 2 into; High-purity catalysis propellant is poured in the last flask 4 of hydrogen chloride generator; The higher boiling heat preserving agent is imported in the ring-type heat-insulation layer of hydrogen chloride generator; In Drexel bottle, import high-purity concentrated hydrochloric acid;
In second step, regulating controllable silicon electric furnace 1 temperature is 50-60 ℃, adjusts the accent liquid knob of hydrogen chloride generator 2, and the catalysis propellant is splashed in the hydrogen chloride generator flask with three seconds one speed, produces hydrogen chloride gas; Regulating controllable silicon electric furnace 12 temperature is 180-240 ℃;
In the 3rd step, blank monkey 9 is put into the chlorination tripping device; Fetch boiling water and take out; Check pipeline and vessel impermeability; Take out blank crucible after 30 minutes;
In the 4th step, the monkey that high purity gallium is housed (sample crucible) is put into the chlorination tripping device; Fetch boiling water and take out; Check pipeline and vessel impermeability; Treat to take out crucible after the high purity gallium volatilization finishes;
In the 5th step, add in blank crucible and the sample crucible and carry out ICP-MS after the acid dissolving and measure wherein impurity.
The parts that this device contacts with material are made up of high-purity quartz, to guarantee that material is not contaminated in the detachment process.
Claims (2)
1. high purity gallium tripping device, comprise controllable silicon electric furnace, hydrogen chloride generation flask, chlorination tripping device, controller and thermopair, it is characterized in that: in the described chlorination tripping device (8), be provided with crucible (9), this crucible is communicated with hydrogen chloride generator (2) by connecting pipe (5), wash bottle (6), chlorination tripping device (8) is also taken out (11) and is communicated with water, controllable silicon electric furnace (1,12) all is connected with controller (13) by lead with thermopair (10).
2. by the described high purity gallium tripping device of claim 1, it is characterized in that described chlorination tripping device (8) is the sandwich-type device of being made by high purity quartz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320176527 CN203178122U (en) | 2013-04-10 | 2013-04-10 | High-purity gallium separation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320176527 CN203178122U (en) | 2013-04-10 | 2013-04-10 | High-purity gallium separation device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203178122U true CN203178122U (en) | 2013-09-04 |
Family
ID=49074803
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320176527 Expired - Lifetime CN203178122U (en) | 2013-04-10 | 2013-04-10 | High-purity gallium separation device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203178122U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108572213A (en) * | 2018-04-24 | 2018-09-25 | 株洲科能新材料有限责任公司 | A kind of high purity tellurium impurity enriched device and its method for 5N grades of tellurium analysis detections |
| CN111912692A (en) * | 2020-07-16 | 2020-11-10 | 东华理工大学 | Device and method for removing gallium from substrate |
-
2013
- 2013-04-10 CN CN 201320176527 patent/CN203178122U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108572213A (en) * | 2018-04-24 | 2018-09-25 | 株洲科能新材料有限责任公司 | A kind of high purity tellurium impurity enriched device and its method for 5N grades of tellurium analysis detections |
| CN111912692A (en) * | 2020-07-16 | 2020-11-10 | 东华理工大学 | Device and method for removing gallium from substrate |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130904 |