CN203135738U - Structure of LC resonant power supply - Google Patents
Structure of LC resonant power supply Download PDFInfo
- Publication number
- CN203135738U CN203135738U CN2013201494122U CN201320149412U CN203135738U CN 203135738 U CN203135738 U CN 203135738U CN 2013201494122 U CN2013201494122 U CN 2013201494122U CN 201320149412 U CN201320149412 U CN 201320149412U CN 203135738 U CN203135738 U CN 203135738U
- Authority
- CN
- China
- Prior art keywords
- resonant
- module
- power
- semiconductor switch
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The utility model discloses a structure of an LC resonant power supply, which is characterized by comprising an LC resonant loop, a synchronization module, an integral module and a comparison module, wherein the LC resonant loop is connected in series in a power supply output loop of a semiconductor switching device; a control electrode of the semiconductor switching device is connected to a driving module; a coil is located on a primary of an output transformer; the synchronization module is respectively connected with two ends of the LC resonant loop through two voltage detection ends, and is provided with a synchronization end; the integral module is connected to the synchronization end, and is provided with an integral end; the comparison module comprises two input ends which are respectively connected with the integral end and a power control level input end; and an output end of the comparison module is connected with a driving module. The scheme adopts the voltage monitoring method to realize a zero-voltage switch, greatly reduces the switching loss of the semiconductor switching device, improves the power conversion efficiency without electrolytic capacitor filtering after AC input rectification, and has a power factor which can reach more than 0.95 without additional PFC regulation circuit during input.
Description
Technical field
The utility model relates to a kind of structure of LC resonant power, and this resonant power is applicable to charging batteries of electric automobile, battery of electric bicycle charging, brine electrolysis power supply, electroplating power supply, ozone generator, anion generator power supply.
Background technology
General charging batteries of electric automobile power supply, battery of electric bicycle charge power supply, brine electrolysis power supply, electroplating power supply, ozonizer power supply, anion generator power supply generally adopt work structuring such as inverse-excitation type, positive activation type, semibridge system, full-bridge type.This circuit structure is all exported a direct voltage stably with AC rectification by electrochemical capacitor filtering, and this electrochemical capacitor increases with power supply design power increase capacity thereupon.We know that electrochemical capacitor is a device that ratio is easier to damage in many applications, particularly reach in the HTHP working condition and easily cause inefficacy, cause the damage of whole power supply.Foregoing circuit structural semiconductor switching device all is operated in the state of hard switching, and switching loss is bigger, has influenced the power supply delivery efficiency.The power supply input power factor is also lower during this arrangement works, does not normally add active PFC and adjusts circuit, and the PF value has only about 0.7, can not cause certain loss to the input electrical network and do not add PFC adjustment circuit.The active PFC of normal adding adjusts circuit PF and just can reach more than 0.95, will increase but add PFC adjustment circuit design cost thereupon.
The utility model content
In order to address the above problem, the utility model proposes a kind of structure of LC resonant power, its scheme semiconductor switch device is operated in soft on off state, can improve power work efficient.Exchange the filtering of input no electrolytic capacitor, can improve the reliability of power supply.The interchange input need not to add in addition PFC adjustment circuit power factor and can reach more than 0.95, and the loss that has reduced the input electrical network has also reduced design cost.The technical scheme of its realization is as follows:
A kind of structure of LC resonant power comprises:
The LC resonant tank comprises the electric capacity and the coil that are in parallel, and this LC resonant tank is series in the electric current output loop of semiconductor switch device; The control utmost point of this semiconductor switch device is connected in a driver module; Described coil is positioned at the elementary of an output transformer;
Synchronization module, this synchronization module connects the two ends of described LC resonant tank respectively by two voltage detecting ends, and has the synchronous end of an output voltage testing result;
Integration module, this integration module are connected in described synchronous end, and have one be subjected to this synchronously end trigger and export the integration end of an integrated signal; And
Comparison module has two inputs, connects described integration end and a clamp signal end respectively; The output of this comparison module connects described driver module.In this scheme, semiconductor switch device can be IGBT, crystal switch pipe and switch MOS Guan Junke.
Preferred person as the technical program can have following mode:
The oscillating circuit form at LC resonant tank place can be varied, can be single tube LC resonant mode, half-bridge LC resonant mode, two-tube LC resonant mode or full-bridge LC resonant mode, wherein,
Single tube LC resonant circuit comprises single described semiconductor switch device, and an end of this LC resonant tank is connected in the power end with current waveform in full-wave rectifier; The other end connects the electric current input utmost point of semiconductor switching device; The electric current output stage ground connection of this semiconductor switch device.
Half-bridge LC resonant circuit comprises two described semiconductor switch devices,
Be connected in the power end with current waveform in full-wave rectifier behind the electric current input utmost point of this semiconductor switch device and the electric current output stage series aiding connection; And an end of this LC resonant tank is connected in described power end; The other end connects the series connection point of the described semiconductor switch device electric current input utmost point and electric current output stage.
Two-tube LC resonant circuit comprises two described semiconductor switch devices, the electric current of this semiconductor switch device input utmost point and electric current output stage series aiding connection, again with a capacitances in series after, be connected in the power end with current waveform in full-wave rectifier; And an end of this LC resonant tank is connected in described power end; The other end connects the series connection point of the described semiconductor switch device electric current input utmost point and electric current output stage.
Full-bridge LC resonant circuit comprises four described semiconductor switch devices, and this semiconductor switch device is in series by its electric current input utmost point and electric current output stage in twos, all is connected in the power end with all-wave shape rectified waveform after the series connection in twos separately; And the two ends of this LC resonant tank are connected the series connection point of the semiconductor switch device of series connection in twos separately.
In the preferred embodiment, other has a protection module, and the input of this protection module is connected in the electric current input utmost point of this semiconductor switch device, and its output is communicated with described clamp signal end.In the preferred embodiment, described protection module comprises a potential-divider network, is connected between the input and ground of this protection module, and its dividing point connects the negative input end of comparator U1D; The positive input terminal of this comparator U1D is connected in a reference voltage end; The output of comparator U1D is as the output of this protection module.
In the preferred embodiment, described integration module comprises resistance R 16, R17, diode D3 and capacitor C 9; Wherein the end of C9 and R16 links to each other and is connected described synchronous end; Another termination positive source of R16, the other end of C9 are described integration end; Diode D3 oppositely is connected between positive source and the integration end, and R17 is in parallel with D3.
In the preferred embodiment, described driver module comprises: transistor Q1 and Q2 that push pull mode connects, and this two base stage links to each other and is connected with the output of described comparison module, simultaneously by a resistance R 1 ground connection; The emitter of Q1 and Q2 links to each other and is connected the control utmost point of described semiconductor switch device by a resistance R 2; Between the control utmost point of semiconductor switch device and ground, have resistance R 3 and voltage-stabiliser tube ZD1.
In the preferred embodiment, comprise a LC filter, this LC filter comprises inductance L 1 and capacitor C 1; Wherein the end of L1 connects the output cathode of a rectifier bridge, and the other end is as described power end.
In the preferred embodiment, described synchronization module comprises:
One comparator U1C, its positive input terminal are connected in the potential-divider network that the voltage of the electric current input utmost point one end of described LC resonant tank connection semiconductor switch device is taken a sample, and its negative input end is connected in the dividing potential drop node of the described LC resonant tank other end; The output of this comparator U1C is described synchronous end.
In the preferred embodiment, described comparison module comprises:
One comparator U1B, its negative input end connect described integration end; Its positive input terminal is connected to described protection module by a potential-divider network, and this potential-divider network comprises resistance R 18 and R19, and the end of R18 connects described clamp signal end; The end ground connection of R19, R18 is connected this comparator U1B positive input terminal with the tie point of R19; Its output of this comparator U1B connects described driver module.
The beneficial effect that the technical program is brought has:
1, adopts the mode of voltage monitoring to realize zero voltage switch, greatly reduced the switching loss of semiconductor switch device, improved the conversion efficiency of power supply.
2, no electrolytic capacitor filtering behind the interchange input rectifying, the reliability of raising power supply.
3, exchange input and need not PFC adjustment circuit, the PF value can reach more than 0.95 during power work.
Description of drawings
The utility model is described in further detail below in conjunction with accompanying drawing embodiment:
Fig. 1 is the schematic diagram of the utility model embodiment one;
Fig. 2 is the circuit diagram of the utility model embodiment two;
Fig. 3 is the schematic diagram of the utility model embodiment three;
Fig. 4 is the schematic diagram of the utility model embodiment four;
Fig. 5 is the schematic diagram of the utility model embodiment five.
Embodiment
Embodiment one:
As shown in Figure 1, a kind of structure of LC resonant power, it comprises LC resonant tank 4, comprises the capacitor C 1 and the coil that are in parallel, and this coil is positioned at the elementary of an output transformer T1, and the semiconductor switch device of present embodiment is an IGBT.One end of this LC resonant tank is connected in the power end Vc with current waveform in full-wave rectifier; The other end connects the C utmost point of an IGBT, i.e. the electric current input utmost point; The E utmost point of this IGBT is electric current output stage ground connection, and the B utmost point is namely controlled the utmost point and is connected in a driver module 3;
A synchronization module 6, this synchronization module 6 connects the two ends of LC resonant tank respectively by two voltage detecting ends, and the synchronous end with an output voltage testing result is connected to an integration module 7, this integration module is subjected to hold level triggers synchronously and produces an integrated signal, by the integration end this integrated signal is exported; This integration end is connected to an input of a comparison module 8; Comparison module 8 has two inputs, and its another one is connected in a clamp signal end 81; The output of this comparison module 8 has connected driver module 3.
Utilize the secondary end 5 of transformer T1, can realize large power supply output.As seen, the circuit of present embodiment adopts the mode of voltage monitoring to realize the zero voltage switch of IGBT, utilize the LC resonant tank to be applied to the synchronous working that its C pole tension value of IGBT realizes the IGBT switch drive, greatly reduced the switching loss of IGBT, improved energy conversion efficiency, so, its output current and power are bigger, the reliability height.Especially, no electrolytic capacitor filtering behind this circuit input rectifying has improved the reliability of power work, and power factor is higher, can reach more than 0.95, does not need extra power factor correction circuit.
Embodiment two:
As shown in Figure 2, the circuit diagram of the utility model embodiment two,
Compare in embodiment one, present embodiment also has a protection module 9 in addition, and the input of this protection module 9 is connected in the C utmost point of this IGBT, and its output has connected the clamp signal end.This protection module 9 comprises a potential-divider network, and this potential-divider network comprises resistance R 7, R8, R9, R12 and the R13 of series connection, be connected between the input and ground of this protection module, and its dividing point, namely R13 is connected the negative input end of comparator U1D with the tie point of R12; The positive input terminal of this comparator U1D is connected in a reference voltage end; This reference voltage adopts R14 and R15 to take a sample in power supply; The output of this comparator U1D is as the output of this protection module.This protection module can be monitored its C pole tension of IGBT in real time, if surpass set point, can make the output of comparator U1D, i.e. the output output low level of this protection module, thereby the driving condition that is used for cutting off IGBT.Especially, with two ends after R12 is connected a voltage-stabiliser tube ZD2 is arranged at R13, this voltage-stabiliser tube ZD2 can protect the voltage of comparator U1D negative input end can not surpass its absolute rating.
In the present embodiment, integration module comprises resistance R 16, R17, diode D3 and capacitor C 9; Wherein the end of C9 and R16 links to each other and is connected described synchronous end; Another termination positive source of R16, the other end of C9 are described integration end; Diode D3 oppositely is connected between positive source and the integration end, and R17 is in parallel with D3.When synchronous end, be that the tie point of C9 and R16 is when being high level, can trigger the integrated signal that the C9 other end produces a triangular wave form, this integrated signal is used for and signal clamp end, is the common adjustable duty ratio waveform that is used for driver module 3 that produces of positive end position of U1B in the present embodiment.
Driver module comprises transistor Q1 and the Q2 that push pull mode connects, and this two base stage links to each other and is connected with the output of described comparison module, simultaneously by a resistance R 1 ground connection; The emitter of Q1 and Q2 links to each other and is connected the B utmost point of described IGBT by a resistance R 2; Between the B of the IGBT utmost point and ground, have resistance R 3 and voltage-stabiliser tube ZD1.Output signal from comparator U1B is the variable square wave of duty ratio, is used for driving the base stage of Q1 and Q2 this moment, is used for promoting IGBT work.
Be prime at power end, have the LC filter, this LC filter comprises inductance L 1 and capacitor C 1; Wherein the end of L1 connects the output cathode of a rectifier bridge DB1, and the other end is as described power end.So can highlight characteristics of the technical program: because this circuit does not need big capacity electrochemical capacitor as its filter element after using LC resonant mode work structuring to exchange input rectifying, that replace can be the thin-film capacitor C1 of inductance L 1 and low capacity, so, omitted the cost of big capacity filter capacitor, adopt thin-film capacitor also to improve the reliability of filter capacitor, because low capacity thin-film capacitor C1 compares big capacity filtering electrolysis, its reliability is higher.
The technical program is for realizing the synchronous mode of no-voltage monitoring, its synchronization module comprises comparator U1C, its positive input terminal is connected in the potential-divider network that the voltage of the C utmost point one end of described LC resonant tank connection IGBT is taken a sample, be the tie point between resistance R 9, the R12, this potential-divider network comprises R7, R8, R9, R12 and R13; Its negative input end is connected in the dividing potential drop node of the other end of LC resonant tank, namely in the potential-divider network that divider resistance R5, R6 and R11 form, and the tie point of R11 and R6; The output of this comparator U1C is described synchronous end.When the C of IGBT pole tension is zero, when enough low in other words, the output of comparator U1C, namely the synchronous end of this circuit output low level has just now so namely realized zero voltage switch in order to trigger integration module 7..
In the present embodiment, comparison module comprises comparator U1B, and its negative input end connects the integration end; Its positive input terminal is connected in protection module 9 by a potential-divider network, and this potential-divider network comprises resistance R 18 and R19, and the end of R18 connects the clamp signal end; The end ground connection of R19, R18 is connected this comparator U1B positive input terminal with the tie point of R19; Its output of this comparator U1B connects driver module 3.This comparison module has generated the EDM Generator of Adjustable Duty Ratio square wave that is used for driver module 3.The secondary end 5 of present embodiment transformer T1 is specially adapted to occasion high-power, big electric current, for example, charging batteries of electric automobile power supply, battery of electric bicycle charge power supply, brine electrolysis power supply, electroplating power supply, ozonizer power supply, anion generator power supply etc.
Embodiment three:
As shown in Figure 3, the schematic diagram of the utility model embodiment three.Its LC resonant tank 4, synchronization module 6, integration module 7, comparison module 8, secondary end 5 are all similar to embodiment one, different is, embodiment one is single tube LC resonant circuit, and present embodiment is half-bridge LC resonant circuit, and this half-bridge LC resonant circuit comprises two semiconductor switch device T1 and T2, behind the electric current input utmost point C utmost point and electric current output stage E utmost point series aiding connection of this semiconductor switch device, be connected in the power end Vc with all-wave shape rectified waveform; And an end of this LC resonant tank is connected in power end Vc; The other end is connected in the series connection point of T1 and T2, also is the tie point of capacitor C 2 and Cx.Therefore, driver module 3 is also different with embodiment one, is the form of two semiconductor switch devices of control.
In control module 3, the control utmost point waveform that drives T1 and T2 is opposite, and the peak-inverse voltage of T1 and T2 is identical with Vc.
Embodiment four:
As shown in Figure 4, the schematic diagram of the utility model embodiment four.The LC resonant tank 4 of present embodiment, synchronization module 6, integration module 7, comparison module 8, secondary end 5 are all similar to embodiment one, different is, present embodiment is two-tube LC resonant circuit, and this two-tube LC resonant circuit comprises two semiconductor switch device T1 and T2, both the electric current input utmost point C utmost point and electric current output stage E utmost point series aiding connections, with after a capacitor C y connects, be connected in the power end Vc with current waveform in full-wave rectifier by Cy again; And an end of this LC resonant tank is connected in power end Vc; The other end connects the series connection point of T1 and T2.
The effect of this structure and capacitor C y auxiliary by T2 has reduced the crest voltage of T1 and T2, and this structural semiconductor switching device can be selected for use lower oppositely withstand voltage.The drive waveforms of T1 and T2 is opposite, and T2 closes when the T1 conducting, and T1 closes during the T2 conducting, so effectively reduce the peak-inverse voltage of T1 and T2.Correspondingly, control module 3 is also for adapting to the form that drives two-tube LC resonant circuit.
Embodiment five:
As shown in Figure 5, the schematic diagram of the utility model embodiment five.The LC resonant tank 4 of present embodiment, synchronization module 6, integration module 7, comparison module 8, secondary end 5 are all similar to embodiment one, and different is, present embodiment uses full-bridge LC resonance to make circuit, this full-bridge LC resonant circuit comprises four semiconductor switch device T1 to T4, and this semiconductor switch device is in series by its electric current input utmost point and electric current output stage in twos, all is connected in the power end with current waveform in full-wave rectifier after the series connection in twos separately; Be that T1 connects by the E utmost point and the C utmost point with T2, T3 connects by the E utmost point and the C utmost point with T4, and the C utmost point of T1 and T3 all is connected in the Vc end then.And the two ends of LC resonant tank are connected the series connection point of the semiconductor switch device of series connection in twos separately.
This full-bridge LC resonant circuit T1, T4 and T2, the drive waveforms of T3 is opposite, T1, T4 conducting T2 forms a resonant circuit when T3 closes, T2, T3 conducting T1 forms a resonant circuit when T4 closes.This structure is used for the bigger power supply of power output, and the reverse withstand voltage demand of semiconductor switch device is also lower simultaneously.
The above, it only is the utility model preferred embodiment, so can not limit the scope that the utility model is implemented according to this, i.e. the equivalence of doing according to the utility model claim and description changes and modifies, and all should still belong in the scope that the utility model contains.
Claims (10)
1. the structure of a LC resonant power is characterized in that: comprising:
The LC resonant tank comprises the electric capacity and the coil that are in parallel, and this LC resonant tank is series in the electric current output loop of semiconductor switch device; The control utmost point of this semiconductor switch device is connected in a driver module; Described coil is positioned at the elementary of an output transformer;
Synchronization module, this synchronization module connects the two ends of described LC resonant tank respectively by two voltage detecting ends, and has the synchronous end of an output voltage testing result;
Integration module, this integration module are connected in described synchronous end, and have one be subjected to this synchronously end trigger and export the integration end of an integrated signal;
Comparison module has two inputs, connects described integration end and a power control level input respectively; The output of this comparison module connects described driver module.
2. according to the structure of the described a kind of LC resonant power of claim 1, it is characterized in that: described LC resonant tank is in the single tube LC resonant circuit, this single tube LC resonant circuit comprises single described semiconductor switch device, and an end of this LC resonant tank is connected in the power end with current waveform in full-wave rectifier; The other end connects the electric current input utmost point of this semiconductor switch device; The electric current output stage ground connection of this semiconductor switch device.
3. according to the structure of the described a kind of LC resonant power of claim 1, it is characterized in that: described LC resonant tank is in the half-bridge LC resonant circuit, this half-bridge LC resonant circuit comprises two described semiconductor switch devices, behind the electric current input utmost point and electric current output stage series aiding connection of this semiconductor switch device, be connected in the power end with current waveform in full-wave rectifier; And an end of this LC resonant tank is connected in described power end; The other end connects the series connection point of the described semiconductor switch device electric current input utmost point and electric current output stage.
4. according to the structure of the described a kind of LC resonant power of claim 1, it is characterized in that: described LC resonant tank is in the two-tube LC resonant circuit, this two-tube LC resonant circuit comprises two described semiconductor switch devices, behind the electric current input utmost point and electric current output stage series aiding connection of this semiconductor switch device, with a capacitances in series, be connected in the power end with current waveform in full-wave rectifier again; And an end of this LC resonant tank is connected in described power end; The other end connects the series connection point of the described semiconductor switch device electric current input utmost point and electric current output stage.
5. according to the structure of the described a kind of LC resonant power of claim 1, it is characterized in that: other has a protection module, and the input of this protection module is connected in the electric current input utmost point of this semiconductor switch device, and its output is communicated with described clamp signal end; This protection module comprises a potential-divider network, is connected between the input and ground of this protection module, and its dividing point connects the negative input end of comparator U1D; The positive input terminal of this comparator U1D is connected in a reference voltage end; The output of comparator U1D is as the output of this protection module.
6. according to the structure of the described a kind of LC resonant power of claim 1, it is characterized in that: described integration module comprises resistance R 16, R17, diode D3 and capacitor C 9; Wherein the end of C9 and R16 links to each other and is connected described synchronous end; Another termination positive source of R16, the other end of C9 are described integration end; Diode D3 oppositely is connected between positive source and the integration end, and R17 is in parallel with D3.
7. according to the structure of the described a kind of LC resonant power of claim 1, it is characterized in that: described driver module comprises: transistor Q1 and Q2 that push pull mode connects, this the two base stage links to each other and is connected with the output of described comparison module, simultaneously by a resistance R 1 ground connection; The emitter of Q1 and Q2 links to each other and is connected the control utmost point of described semiconductor switch device by a resistance R 2; Between the control utmost point of semiconductor switch device and ground, have resistance R 3 and voltage-stabiliser tube ZD1.
8. according to the structure of the described a kind of LC resonant power of claim 1, it is characterized in that: comprise a LC filter, this LC filter comprises inductance L 1 and thin-film capacitor C1; Wherein the end of L1 connects the output cathode of a rectifier bridge, and the other end is as described power end.
9. according to the structure of each described a kind of LC resonant power in the claim 1 to 8, it is characterized in that: described synchronization module comprises:
One comparator U1C, its positive input terminal are connected in the potential-divider network that the voltage of the electric current input utmost point one end of described LC resonant tank connection semiconductor switch device is taken a sample, and its negative input end is connected in the dividing potential drop node of the described LC resonant tank other end; The output of this comparator U1C is described synchronous end.
10. according to the structure of the described a kind of LC resonant power of claim 9, it is characterized in that: described comparison module comprises:
One comparator U1B, its negative input end connect described integration end; Its positive input terminal inserts a power control level and a protection module respectively.R19 and C11 are respectively divider resistance and the filter capacitor of input power control level, and protection module comparator U1D output is connected in the positive input terminal of U1B through R18 resistance, and its output of this comparator U1B connects described driver module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013201494122U CN203135738U (en) | 2013-03-28 | 2013-03-28 | Structure of LC resonant power supply |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013201494122U CN203135738U (en) | 2013-03-28 | 2013-03-28 | Structure of LC resonant power supply |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203135738U true CN203135738U (en) | 2013-08-14 |
Family
ID=48943677
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013201494122U Expired - Fee Related CN203135738U (en) | 2013-03-28 | 2013-03-28 | Structure of LC resonant power supply |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203135738U (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104065283A (en) * | 2014-07-03 | 2014-09-24 | 苏州奥曦特电子科技有限公司 | Bridge-free type PRC alternating-current-to-direct-current power converter |
| CN105576986A (en) * | 2016-02-01 | 2016-05-11 | 晶澳(扬州)太阳能光伏工程有限公司 | Quasi-resonant flyback converter and grid-connected inverter capable of realizing output current shaping |
| CN107017779A (en) * | 2017-05-31 | 2017-08-04 | 青岛大学 | A kind of band pulls down the isolated form DC DC booster converter control methods of active clamp branch road |
| CN107017780A (en) * | 2017-05-31 | 2017-08-04 | 青岛大学 | The isolated form DC DC booster converters and its control method of a kind of band pull-up active clamp branch road |
| CN107070267A (en) * | 2017-04-05 | 2017-08-18 | 深圳戴普森新能源技术有限公司 | A kind of magnetron power source |
| CN108449831A (en) * | 2018-03-14 | 2018-08-24 | 福州大学 | A kind of High Power Factor long-life LED drive power and control method |
| CN111740587A (en) * | 2020-07-15 | 2020-10-02 | 广东恒发电器科技有限公司 | Novel LC quasi-resonant circuit and working method |
| CN114079385A (en) * | 2021-11-23 | 2022-02-22 | 吕真 | Power supply circuit based on synchronous driving LLC resonant circuit series-parallel conversion |
| CN115932748A (en) * | 2023-03-02 | 2023-04-07 | 北京大有半导体有限责任公司 | On-chip radio frequency radar transmitting system and on-chip radio frequency radar |
-
2013
- 2013-03-28 CN CN2013201494122U patent/CN203135738U/en not_active Expired - Fee Related
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104065283B (en) * | 2014-07-03 | 2018-02-16 | 苏州奥曦特电子科技有限公司 | No bridge type PFC AC DC supply convertors |
| CN104065283A (en) * | 2014-07-03 | 2014-09-24 | 苏州奥曦特电子科技有限公司 | Bridge-free type PRC alternating-current-to-direct-current power converter |
| CN105576986A (en) * | 2016-02-01 | 2016-05-11 | 晶澳(扬州)太阳能光伏工程有限公司 | Quasi-resonant flyback converter and grid-connected inverter capable of realizing output current shaping |
| CN105576986B (en) * | 2016-02-01 | 2018-08-17 | 晶澳(扬州)太阳能光伏工程有限公司 | It can realize the Emmitter diven quasi and gird-connected inverter of output current shaping |
| CN107070267A (en) * | 2017-04-05 | 2017-08-18 | 深圳戴普森新能源技术有限公司 | A kind of magnetron power source |
| CN107017780A (en) * | 2017-05-31 | 2017-08-04 | 青岛大学 | The isolated form DC DC booster converters and its control method of a kind of band pull-up active clamp branch road |
| CN107017779A (en) * | 2017-05-31 | 2017-08-04 | 青岛大学 | A kind of band pulls down the isolated form DC DC booster converter control methods of active clamp branch road |
| CN107017780B (en) * | 2017-05-31 | 2019-05-10 | 青岛大学 | A kind of the isolated form DC-DC boost converter and its control method of band pull-up active clamp branch |
| CN108449831A (en) * | 2018-03-14 | 2018-08-24 | 福州大学 | A kind of High Power Factor long-life LED drive power and control method |
| CN111740587A (en) * | 2020-07-15 | 2020-10-02 | 广东恒发电器科技有限公司 | Novel LC quasi-resonant circuit and working method |
| CN111740587B (en) * | 2020-07-15 | 2021-08-27 | 广东恒发电器科技有限公司 | LC quasi-resonant circuit and working method |
| CN114079385A (en) * | 2021-11-23 | 2022-02-22 | 吕真 | Power supply circuit based on synchronous driving LLC resonant circuit series-parallel conversion |
| CN114079385B (en) * | 2021-11-23 | 2023-07-28 | 吕真 | LLC resonant circuit series-parallel conversion power supply circuit based on synchronous drive |
| CN115932748A (en) * | 2023-03-02 | 2023-04-07 | 北京大有半导体有限责任公司 | On-chip radio frequency radar transmitting system and on-chip radio frequency radar |
| CN115932748B (en) * | 2023-03-02 | 2023-10-24 | 北京大有半导体有限责任公司 | On-chip radio frequency radar transmitting system and on-chip radio frequency radar |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN203135738U (en) | Structure of LC resonant power supply | |
| CN101841252B (en) | Photovoltaic grid-connected inverter for active energy decoupling | |
| CN105577003B (en) | A kind of Switching Power Supply with APFC | |
| CN106059306B (en) | A kind of multiple-unit diode capacitance network high-gain full-bridge isolated DC converter | |
| CN105491728B (en) | Direct filtering type switching power supply | |
| CN107222100B (en) | A kind of single-stage LED drive circuit of integrated Buck-Boost and LLC circuit | |
| CN105896993A (en) | High-gain isolation type direct-current converter for multi-unit diode capacitor network | |
| CN108235509B (en) | A kind of single-stage LED drive circuit of integrated decompression Cuk and LLC circuit | |
| CN101902129A (en) | Current-type multi-resonance direct current (DC) converter | |
| CN105527524A (en) | Indication circuit for switch power supply and usage method | |
| CN114079400B (en) | Motor control circuit, vehicle and battery self-heating control method | |
| CN110022066A (en) | CLLC circuit of synchronous rectification and control method | |
| CN206379880U (en) | BOOST boosts and half-bridge LLC two-stage combination vibration controlling power circuits | |
| CN103259442A (en) | High-gain current type inverter | |
| CN104753445A (en) | Solar power supply device | |
| CN110034681A (en) | A kind of crisscross parallel ZVZCS high boosting DC/DC converter | |
| CN201312262Y (en) | High-frequency switch power supply with higher conversion efficiency | |
| CN104426377B (en) | Wide-input voltage flyback-type switch power supply applicable to drive of direct-current motor | |
| CN103329626B (en) | LED drive circuit and LED drive chip | |
| CN203691279U (en) | Topologically structured circuit of mini photovoltaic inverter | |
| CN106452152A (en) | Switch boost type high-gain quasi-Z-source inverter | |
| CN203104911U (en) | High-power LED (light emitting diode) drive power supply | |
| CN104822211A (en) | High-reliability LED illuminating device | |
| CN204967397U (en) | Car charger | |
| CN101924481A (en) | PFC (Power Factor Correction) rectifier circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130814 |