CN203135708U - Double-channel high-frequency power absorbing network - Google Patents

Double-channel high-frequency power absorbing network Download PDF

Info

Publication number
CN203135708U
CN203135708U CN 201320101486 CN201320101486U CN203135708U CN 203135708 U CN203135708 U CN 203135708U CN 201320101486 CN201320101486 CN 201320101486 CN 201320101486 U CN201320101486 U CN 201320101486U CN 203135708 U CN203135708 U CN 203135708U
Authority
CN
China
Prior art keywords
diode
transformer
electric capacity
resistance
magnetic bead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 201320101486
Other languages
Chinese (zh)
Inventor
庄景阳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NanAn Liucheng Gaojie Graphic Designer Work Studio
Original Assignee
NanAn Liucheng Gaojie Graphic Designer Work Studio
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NanAn Liucheng Gaojie Graphic Designer Work Studio filed Critical NanAn Liucheng Gaojie Graphic Designer Work Studio
Priority to CN 201320101486 priority Critical patent/CN203135708U/en
Application granted granted Critical
Publication of CN203135708U publication Critical patent/CN203135708U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Abstract

A double-channel high-frequency power absorbing network comprises a number I resistor, a number I capacitor, a number II resistor, a number II capacitor, a magnetic bead, a transformer, a control module, a number III capacitor and a diode. The double-channel high-frequency power absorbing network is characterized in that the anode of the diode is connected with the secondary output positive terminal of the transformer, the cathode of the diode is connected with one end of the magnetic bead, a group of number I absorption networks formed by the series connection of the number I capacitor and the number I resistor are in parallel connection between the other end of the magnetic bead and the anode of the diode, another group of number II absorption networks formed by the series connection of the number II capacitor and the number II resistor are in parallel connection between the cathode and the anode of the diode, and a number III capacitor is in parallel with the secondary positive and negative terminals of the transformer. The reverse peak voltage generated between the diode and the magnetic bead is absorbed by the number II absorption networks, the reverse peak voltage generated between the magnetic bead and the power storage capacitor is absorbed by the number I absorption networks, instant turn-on/off phenomenon of the secondary output of the transformer caused by a DC current is effectively prevented, and the forward voltage raise of anode of the diode is prevented.

Description

The binary channels high frequency electric source absorbs network
Technical field
The utility model relates to a kind of motor vehicle illumination with the transformer output protection device of HID stabilizer, is that a kind of binary channels high frequency electric source absorbs network concretely.
Background technology
The transformer out-put supply of HID stabilizer belongs to high frequency electric source, because transformer must convert the direct current of 12V to high-tension electricity more than the 20000V, puncture bulb after, the out-put supply with transformer is stabilized in about 85V again.Because of after the diode heating, it bears reverse voltage and the forward conduction electric current all will descend, and when the driver becomes the light time to light, the high electric current of the high back voltage of moment and forward will damage rectifier diode and metal-oxide-semiconductor easily.And the high frequency absorption mesh that uses now, exactly at the two ends of diode one group of circuit that is formed by resistance and capacitance series in parallel, when peak voltage comes to absorb by its peak voltage temporarily, and the back is connected in series a magnetic bead behind the front of diode, is used for eliminating the peak voltage of diode.Yet, in ordinary production, because the structure of transformer is the certain factor of entire environment, it is done manual work and magnetic flux all has a strong impact on the parameter that absorbs network, and, after string is gone up magnetic bead, peak voltage decreases, but the forward voltage of transformer when opening raises, and during startup, damages diode easily.
Summary of the invention
The purpose of this utility model is to provide a kind of binary channels high frequency electric source to absorb network, has the forward voltage of the secondary output of balancing transformer, and binary channels absorbs the function of the reverse spike voltage of magnetic bead and diode again.
The utility model is realized with following technical scheme: this binary channels high frequency electric source absorbs network, and its structure is made up of a resistance, an electric capacity, No. two resistance, No. two electric capacity, magnetic bead, transformer, control module, No. three electric capacity, diodes.It is characterized in that, the anode of diode is connected with the secondary output cathode end of transformer, the negative electrode of diode is connected with magnetic bead, in the middle of the other end of magnetic bead and the anode of diode in parallel one group by electric capacity and a absorption mesh after a resistance is connected, No. two absorption mesh after another group in parallel is connected by No. two electric capacity and No. two resistance between the anode and cathode of diode, the secondary positive and negative end of transformer No. three electric capacity in parallel.
The DC power supply one tunnel of 12V storage battery arrives transformer, and another road arrives control module, and control module starts metal-oxide-semiconductor work, transformer secondary output output voltage, stabilizer work.In the 12V direct current is closed frequent operation with conducting in moment, described moment closes and conducting, refer to that stabilizer is in the moment of start and stop, the forward too high voltages and the reverse spike voltage that produce in this moment, rather than under the normal operating conditions, ending and conducting of the output AC electricity that the metal-oxide-semiconductor vibration produces, No. two absorption mesh absorbs the reverse spike voltage that produces between diode and the magnetic bead, No. one absorption mesh absorbs the reverse spike voltage of magnetic bead and energy storage capacitor generation, can not close and connect because of galvanic moment and No. three electric capacity effectively ensures the secondary output of transformer, the anode forward voltage of diode can be elevated.
On above-mentioned basis, the anode of diode is connected with the secondary output cathode end of transformer, between the anode and cathode of diode, one group of absorption mesh then being formed by an electric capacity and a resistance series connection in parallel, organize by No. two absorption mesh after No. two electric capacity and No. two resistance series connection with another, the secondary positive and negative end of transformer No. three electric capacity in parallel
A described absorption mesh and No. two absorption mesh are synchronously and at the two poles of the earth of diode, as adopt the method, can cancel magnetic bead, utilize the different resistances of resistance, an absorption mesh of low resistance is used for absorbing big electric current, high-resistance No. two absorption mesh are used for absorbing high voltage, thereby no matter guarantee that diode under which kind of situation, can not damage.
A described electric capacity and No. two its models of electric capacity are: 102J630V.
Described its model of resistance is: 33K Ω.
Described No. two its models of resistance are: 100K Ω.
Described No. three electric capacity, when transformer was selected the M8 model for use, its model was: 102J100V.
Described No. three electric capacity, when transformer was selected the PQ26 model for use, its model was: 331J100V.
Described magnetic bead is: diameter 6mm, length 11mm.
Described diode is: when transformer was selected the M8 model for use, diode was selected HER or SF series for use.
Described diode is: when transformer was selected the PQ26 model for use, diode was selected SF series for use.
Beneficial effect is: reached the forward voltage of the secondary output of balancing transformer, binary channels absorbs the reverse spike voltage of magnetic bead and diode again, has effectively guaranteed the function in the useful life of diode.
Description of drawings
Fig. 1 is that the utility model binary channels high frequency electric source absorbs the structural map of network in stabilizer.
No. 1. resistance among the figure, 2. an electric capacity, 3. No. two resistance, 4. No. two electric capacity, 5. magnetic bead, 6. transformer, 7. control module, 8. No. three electric capacity, 9. diodes.
Embodiment
Fig. 1 is that the utility model binary channels high frequency electric source absorbs the structural map of network in stabilizer, is made up of a resistance 1, an electric capacity 2, No. two resistance 3, No. two electric capacity 4, magnetic bead 5, transformer 6, control module 7, No. three electric capacity 8, diodes 9.In Fig. 1, implement one: the anode of diode 9 is connected with the secondary output cathode end of transformer 6, the negative electrode of diode 9 is connected with magnetic bead 5, in the middle of the anode of the other end of magnetic bead 5 and diode 9 in parallel one group by electric capacity 2 and a absorption mesh after a resistance 1 is connected, No. two absorption mesh after another group in parallel is connected by No. two electric capacity 4 and No. two resistance 3 between the anode and cathode of diode 9, the secondary positive and negative end of transformer 6 No. three electric capacity 8 in parallel.
Implement two: the anode of diode 9 is connected with the secondary output cathode end of transformer 6, between the anode and cathode of diode 9, one group of absorption mesh then being formed by an electric capacity 2 and resistance 1 series connection in parallel, organize by No. two absorption mesh after No. two electric capacity 4 and No. two resistance 3 series connection with another, the secondary positive and negative end of transformer 6 No. three electric capacity 8 in parallel
A described absorption mesh and No. two absorption mesh are synchronously and at the two poles of the earth of diode 9, as adopt the method, can cancel magnetic bead 5, utilize the different resistances of resistance, an absorption mesh of low resistance is used for absorbing big electric current, high-resistance No. two absorption mesh are used for absorbing high voltage, thereby no matter guarantee that diode 9 under which kind of situation, can not damage.

Claims (7)

1. a binary channels high frequency electric source absorbs network, its structure is by a resistance, an electric capacity, No. two resistance, No. two electric capacity, magnetic bead, transformer, control module, No. three electric capacity, diode is formed, it is characterized in that, the anode of diode is connected with the secondary output cathode end of transformer, the negative electrode of diode is connected with magnetic bead, in the middle of the other end of magnetic bead and the anode of diode in parallel one group by electric capacity and a absorption mesh after a resistance is connected, No. two absorption mesh after another group in parallel is connected by No. two electric capacity and No. two resistance between the anode and cathode of diode, the secondary positive and negative end of transformer No. three electric capacity in parallel
The DC power supply one tunnel of 12V storage battery arrives transformer, and another road arrives control module, and control module starts metal-oxide-semiconductor work, the transformer secondary output output voltage, and stabilizer work, in the 12V direct current is closed frequent operation with conducting in moment,
Described moment closes and conducting, refers to stabilizer in the moment of start and stop, the forward too high voltages and the reverse spike voltage that produce in this moment, rather than under the normal operating conditions, the output AC electricity that the metal-oxide-semiconductor vibration produces by and conducting,
No. two absorption mesh absorbs the reverse spike voltage that produces between diode and the magnetic bead, No. one absorption mesh absorbs the reverse spike voltage of magnetic bead and energy storage capacitor generation, can not close and connect because of galvanic moment and No. three electric capacity effectively ensures the secondary output of transformer, the anode forward voltage of diode can be elevated.
2. a binary channels high frequency electric source absorbs network, its structure is by a resistance, an electric capacity, No. two resistance, No. two electric capacity, transformer, control module, No. three electric capacity, diode is formed, it is characterized in that, the anode of diode is connected with the secondary output cathode end of transformer, between the anode and cathode of diode, one group of absorption mesh then being formed by an electric capacity and a resistance series connection in parallel, organize by No. two absorption mesh after No. two electric capacity and No. two resistance series connection with another, the secondary positive and negative end of transformer No. three electric capacity in parallel
A described absorption mesh and No. two absorption mesh are synchronously and at the two poles of the earth of diode, as adopt the method, can cancel magnetic bead, utilize the different resistances of resistance, an absorption mesh of low resistance is used for absorbing big electric current, high-resistance No. two absorption mesh are used for absorbing high voltage, thereby no matter guarantee that diode under which kind of situation, can not damage.
3.. a kind of binary channels high frequency electric source according to claim 1 and 2 absorbs network, it is characterized in that described its model of resistance is: 33K Ω; Described No. two its models of resistance are: 100K Ω.
4. a kind of binary channels high frequency electric source according to claim 1 absorbs network, it is characterized in that described magnetic bead is: diameter 6mm, length 11mm.
5. a kind of binary channels high frequency electric source according to claim 1 and 2 absorbs network, it is characterized in that, and described No. three electric capacity, when transformer was selected the M8 model for use, its model was: 102J100V; When transformer was selected the PQ26 model for use, its model was: 331J100V.
6. a kind of binary channels high frequency electric source according to claim 1 and 2 absorbs network, and it is characterized in that described diode is: when transformer was selected the M8 model for use, diode was selected HER or SF series for use; When transformer was selected the PQ26 model for use, diode was selected SF series for use.
7. a kind of binary channels high frequency electric source according to claim 1 and 2 absorbs network, it is characterized in that, a kind of binary channels high frequency electric source according to claim 1 absorbs network, it is characterized in that a described electric capacity and No. two its models of electric capacity are: 102J630V.
CN 201320101486 2013-03-06 2013-03-06 Double-channel high-frequency power absorbing network Expired - Fee Related CN203135708U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201320101486 CN203135708U (en) 2013-03-06 2013-03-06 Double-channel high-frequency power absorbing network

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201320101486 CN203135708U (en) 2013-03-06 2013-03-06 Double-channel high-frequency power absorbing network

Publications (1)

Publication Number Publication Date
CN203135708U true CN203135708U (en) 2013-08-14

Family

ID=48943647

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201320101486 Expired - Fee Related CN203135708U (en) 2013-03-06 2013-03-06 Double-channel high-frequency power absorbing network

Country Status (1)

Country Link
CN (1) CN203135708U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107658123A (en) * 2017-10-30 2018-02-02 贵州金林电子科技有限公司 The processing technology of high frequency transformer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107658123A (en) * 2017-10-30 2018-02-02 贵州金林电子科技有限公司 The processing technology of high frequency transformer

Similar Documents

Publication Publication Date Title
CN202364112U (en) Starting circuit of control chip of switching-mode power supply
CN103683456B (en) A kind of hybrid power public transport super-capacitor and lithium battery parallel circuit
CN104185333A (en) Constant-current constant-voltage circuit and illuminating device
CN102097798A (en) High-power startup surge suppression circuit
CN103346553A (en) Reverse-connection-resisting and relay-coil-short-circuit-resisting control circuit of electronic controller
CN202957746U (en) Peak voltage absorption circuit of direct current/alternating current (DC/AC) transducer switch tube of airplane starting system
CN104485652A (en) Reverse connection prevention and surging prevention device for vehicle terminal power supply
CN203859570U (en) Temperature control protection type electric vehicle charging system
CN203135708U (en) Double-channel high-frequency power absorbing network
CN203193540U (en) Pulse transformer leakage inductor energy recovery and buffer circuit
CN206595713U (en) A kind of surge protection circuit
CN102097796A (en) Voltage peak absorption protection circuit for power switching tube of solar energy charge controller
CN204928320U (en) Car charge battery circuit
CN103117648A (en) Double-channel high-frequency power supply absorbing network
CN201835967U (en) Device for controlling flameout of igniter through trigger circuit
CN204681087U (en) Solar charging device anti-surge circuit
CN103118473A (en) HID (high intensity discharging lamp) electronic ballast
CN202333940U (en) Device for improving charging current of rectifier in virtue of energy storage capacitor
CN203331853U (en) Buffer switch circuit of electromobile
CN207251464U (en) Anti- overshoot circuit with the damping of wide output area
CN207542869U (en) The emergency starting device and power supply system of train of a kind of rail traffic
CN202749795U (en) Power-up overvoltage protection circuit of electric welding machine
CN203775099U (en) Automotive AC power generator voltage regulator with shortcircuit protection function
CN204886132U (en) Prevent voltage pulse circuit
CN204721037U (en) A kind of charger based on BUCK circuit

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130814

Termination date: 20140306