CN103117648A - Double-channel high-frequency power supply absorbing network - Google Patents
Double-channel high-frequency power supply absorbing network Download PDFInfo
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- CN103117648A CN103117648A CN2013100708171A CN201310070817A CN103117648A CN 103117648 A CN103117648 A CN 103117648A CN 2013100708171 A CN2013100708171 A CN 2013100708171A CN 201310070817 A CN201310070817 A CN 201310070817A CN 103117648 A CN103117648 A CN 103117648A
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Abstract
A double-channel high-frequency power supply absorbing network consists of first resistors, first capacitors, second resistors, second capacitors, a magnetic bead, a transformer, a control module, a third capacitor, a diode and is characterized in that a positive pole of the diode is connected with a secondary output positive pole of the transformer, a negative pole of the diode is connected with the magnetic bead, a groups of first absorbing networks formed by connecting the first capacitors and the first resistors in series is connected between the other end of the magnetic bead and the middle of the positive pole, the other group of second absorbing networks formed by connecting the second capacitors and the second resistors in series is connected between the positive pole and the negative pole of the diode, and a secondary positive pole and a secondary negative pole of the transformer are connected with the third capacitor in parallel. The second absorbing networks absorb reverse spike voltage produced between the diode and the magnetic bead, the first absorbing networks absorb reverse spike voltage produced between the magnetic bead and the energy storage capacitors, the third capacitor effectively guarantees connection of a secondary output of the transformer due to instant closing of direct current and enables forward voltage of a positive pole of the diode not to be too high.
Description
Technical field
The present invention relates to a kind of motor vehicle illumination with the transformer output protecting device of HID stabilizer, is that a kind of binary channels high frequency electric source absorbs network concretely.
Background technology
The transformer out-put supply of HID stabilizer belongs to high frequency electric source, and because transformer must convert the direct current of 12V to high-tension electricity more than 20000V, after puncturing bulb, the out-put supply with transformer is stabilized in the 85V left and right again.Because of after diode heating, it bears reverse voltage and the forward conduction electric current all will descend, and when the driver becomes the light time to light, the high electric current of the high back voltage of moment and forward will easily damage rectifier diode and MOSFET.And the high-frequency absorption net that uses now, exactly at the two ends of diode one group of circuit that is formed by resistance and capacitance series in parallel, when peak voltage comes to absorb by its peak voltage temporarily, and the back is connected in series a magnetic bead behind the front of diode, is used for eliminating the peak voltage of diode.Yet, in normal production, because the structure of transformer is the certain factor of whole environment, it is done manual work and magnetic flux all has a strong impact on the parameter that absorbs network, and, after the upper magnetic bead of string, peak voltage decreases, but the forward voltage of transformer when opening raises, and during startup, easily damages diode.
Summary of the invention
The object of the present invention is to provide a kind of binary channels high frequency electric source to absorb network, have the forward voltage of the secondary output of balancing transformer, binary channels absorbs the function of the reverse spike voltage of magnetic bead and diode again.
The present invention realizes with following technical scheme: this binary channels high frequency electric source absorbs network, and its structure is comprised of a resistance, an electric capacity, No. two resistance, No. two electric capacity, magnetic bead, transformer, control module, No. three electric capacity, diodes.It is characterized in that, the anode of diode is connected with the secondary output cathode end of transformer, the negative electrode of diode is connected with magnetic bead, in the middle of the other end of magnetic bead and the anode of diode in parallel one group by electric capacity and an absorption mesh after a resistance is connected, No. two absorption mesh after between the anode and cathode of diode, another group in parallel is connected by No. two electric capacity and No. two resistance, the secondary positive and negative end of transformer No. three electric capacity in parallel.
The DC power supply one tunnel of 12V storage battery arrives transformer, and another road arrives control module, and control module starts MOSFET work, transformer secondary output output voltage, stabilizer work.in the 12V direct current is closed frequent operation with conducting in moment, described moment closes and conducting, refer to that stabilizer is in the moment of start and stop, the forward too high voltages and the reverse spike voltage that produce in this moment, rather than under normal operating conditions, cut-off and the conducting of the output AC electricity that the MOSFET vibration produces, No. two absorption mesh absorbs the reverse spike voltage that produces between diode and magnetic bead, No. one absorption mesh absorbs the reverse spike voltage of magnetic bead and energy storage capacitor generation, and the secondary output of No. three electric capacity effective guarantee transformers can not closed and connect because of galvanic moment, make the anode forward voltage of diode can be by too not high.
A described electric capacity and No. two its models of electric capacity are: 102J630V.
Described its model of resistance is: 33K Ω.
Described No. two its models of resistance are: 100K Ω.
Described No. three electric capacity, when Transformer Selection M8 model, its model is: 102J100V.
Described No. three electric capacity, when Transformer Selection PQ26 model, its model is: 331J100V.
Described magnetic bead is: diameter 6mm, length 11mm.
Described diode is: when Transformer Selection M8 model, diode is selected HER or SF series.
Described diode is: when Transformer Selection PQ26 model, diode is selected SF series.
Beneficial effect is: reached the forward voltage of the secondary output of balancing transformer, binary channels absorbs the reverse spike voltage of magnetic bead and diode again, has effectively guaranteed the function in the useful life of diode.
Description of drawings
Fig. 1 is that binary channels high frequency electric source of the present invention absorbs the structural map of network in stabilizer.
No. 1. resistance in figure, 2. an electric capacity, 3. No. two resistance, 4. No. two electric capacity, 5. magnetic bead, 6. transformer, 7. control module, 8. No. three electric capacity, 9. diodes.
Embodiment
Fig. 1 is that binary channels high frequency electric source of the present invention absorbs the structural map of network in stabilizer, is comprised of a resistance 1, an electric capacity 2, No. two resistance 3, No. two electric capacity 4, magnetic bead 5, transformer 6, control module 7, No. three electric capacity 8, diodes 9.In Fig. 1, the anode of diode 9 is connected with the secondary output cathode end of transformer 6, the negative electrode of diode 9 is connected with magnetic bead 5, in the middle of the anode of the other end of magnetic bead 5 and diode 9 in parallel one group by electric capacity 2 and an absorption mesh after a resistance 1 is connected, No. two absorption mesh after between the anode and cathode of diode 9, another group in parallel is connected by No. two electric capacity 4 and No. two resistance 3, the secondary positive and negative end of transformer 6 No. three electric capacity 8 in parallel.
Implement two: the anode of diode 9 is connected with the secondary output cathode end of transformer 6, between the anode and cathode of diode 9, one group of absorption mesh that forms after being connected by an electric capacity 2 and a resistance 1 in parallel, No. two absorption mesh after being connected by No. two electric capacity 4 and No. two resistance 3 with another group, the secondary positive and negative end of transformer 6 No. three electric capacity 8 in parallel
A described absorption mesh and No. two absorption mesh are synchronous and at the two poles of the earth of diode 9, as adopt the method, can cancel magnetic bead 5, utilize the different resistances of resistance, an absorption mesh of low resistance is used for absorbing large electric current, high-resistance No. two absorption mesh are used for absorbing high voltage, thereby no matter guarantee that diode 9 in which kind of situation, can not damage.
Claims (7)
1. a binary channels high frequency electric source absorbs network, and its structure is comprised of a resistance, an electric capacity, No. two resistance, No. two electric capacity, magnetic bead, transformer, control module, No. three electric capacity, diodes.It is characterized in that, the anode of diode is connected with the secondary output cathode end of transformer, the negative electrode of diode is connected with magnetic bead, in the middle of the other end of magnetic bead and the anode of diode in parallel one group by electric capacity and an absorption mesh after a resistance is connected, No. two absorption mesh after between the anode and cathode of diode, another group in parallel is connected by No. two electric capacity and No. two resistance, the secondary positive and negative end of transformer No. three electric capacity in parallel
The DC power supply one tunnel of 12V storage battery arrives transformer, and another road arrives control module, and control module starts MOSFET work, the transformer secondary output output voltage, and stabilizer work, in the 12V direct current is closed frequent operation with conducting in moment,
Described moment closes and conducting, refers to stabilizer in the moment of start and stop, the forward too high voltages and the reverse spike voltage that produce in this moment, rather than under normal operating conditions, cut-off and the conducting of the output AC electricity that the MOSFET vibration produces,
No. two absorption mesh absorbs the reverse spike voltage that produces between diode and magnetic bead, No. one absorption mesh absorbs the reverse spike voltage of magnetic bead and energy storage capacitor generation, and the secondary output of No. three electric capacity effective guarantee transformers can not closed and connect because of galvanic moment, makes the anode forward voltage of diode can be by too not high.
2. a binary channels high frequency electric source absorbs network, its structure is by a resistance, an electric capacity, No. two resistance, No. two electric capacity, transformer, control module, No. three electric capacity, diode forms, it is characterized in that, the anode of diode is connected with the secondary output cathode end of transformer, between the anode and cathode of diode, one group of absorption mesh that forms after being connected by an electric capacity and a resistance in parallel, No. two absorption mesh after being connected by No. two electric capacity and No. two resistance with another group, the secondary positive and negative end of transformer No. three electric capacity in parallel
A described absorption mesh and No. two absorption mesh are synchronous and at the two poles of the earth of diode, as adopt the method, can cancel magnetic bead, utilize the different resistances of resistance, an absorption mesh of low resistance is used for absorbing large electric current, high-resistance No. two absorption mesh are used for absorbing high voltage, thereby no matter guarantee that diode in which kind of situation, can not damage.
3. a kind of binary channels high frequency electric source according to claim 1 and 2 absorbs network, it is characterized in that, described its model of resistance is: 33K Ω; Described No. two its models of resistance are: 100K Ω.
4. a kind of binary channels high frequency electric source according to claim 1 absorbs network, it is characterized in that, described magnetic bead is: diameter 6mm, length 11mm.
5. a kind of binary channels high frequency electric source according to claim 1 and 2 absorbs network, it is characterized in that, and described No. three electric capacity, when Transformer Selection M8 model, its model is: 102J100V; When Transformer Selection PQ26 model, its model is: 331J100V.
6. a kind of binary channels high frequency electric source according to claim 1 and 2 absorbs network, it is characterized in that, described diode is: when Transformer Selection M8 model, diode is selected HER or SF series; When Transformer Selection PQ26 model, diode is selected SF series.
7. a kind of binary channels high frequency electric source according to claim 1 and 2 absorbs network, it is characterized in that, a described electric capacity and No. two its models of electric capacity are: 102J630V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2013100708171A CN103117648A (en) | 2013-03-06 | 2013-03-06 | Double-channel high-frequency power supply absorbing network |
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| CN2013100708171A CN103117648A (en) | 2013-03-06 | 2013-03-06 | Double-channel high-frequency power supply absorbing network |
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| CN103117648A true CN103117648A (en) | 2013-05-22 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107658123A (en) * | 2017-10-30 | 2018-02-02 | 贵州金林电子科技有限公司 | The processing technology of high frequency transformer |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1482729A (en) * | 2002-09-10 | 2004-03-17 | 烨 李 | Thermoelectric cooling conversion power supply |
| CN201219239Y (en) * | 2008-06-18 | 2009-04-08 | 合肥同智科技发展有限公司 | Low power-input high-power-output start power supply |
| CN102395238A (en) * | 2011-11-18 | 2012-03-28 | 庄景阳 | Double-Moss tube asynchronous control HID transformer frequency output apparatus |
| CN202571552U (en) * | 2012-04-12 | 2012-12-05 | 广州亦高电气设备有限公司 | Secondary inversion major loop for alternating-current/direct-current argon arc welding machine |
-
2013
- 2013-03-06 CN CN2013100708171A patent/CN103117648A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1482729A (en) * | 2002-09-10 | 2004-03-17 | 烨 李 | Thermoelectric cooling conversion power supply |
| CN201219239Y (en) * | 2008-06-18 | 2009-04-08 | 合肥同智科技发展有限公司 | Low power-input high-power-output start power supply |
| CN102395238A (en) * | 2011-11-18 | 2012-03-28 | 庄景阳 | Double-Moss tube asynchronous control HID transformer frequency output apparatus |
| CN202571552U (en) * | 2012-04-12 | 2012-12-05 | 广州亦高电气设备有限公司 | Secondary inversion major loop for alternating-current/direct-current argon arc welding machine |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107658123A (en) * | 2017-10-30 | 2018-02-02 | 贵州金林电子科技有限公司 | The processing technology of high frequency transformer |
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Application publication date: 20130522 |