CN203117252U - Sampling resistor with high alternate magnetic field interference resistance - Google Patents
Sampling resistor with high alternate magnetic field interference resistance Download PDFInfo
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- CN203117252U CN203117252U CN 201220548534 CN201220548534U CN203117252U CN 203117252 U CN203117252 U CN 203117252U CN 201220548534 CN201220548534 CN 201220548534 CN 201220548534 U CN201220548534 U CN 201220548534U CN 203117252 U CN203117252 U CN 203117252U
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- magnetic field
- resistance
- sample resistance
- field interference
- sampling resistor
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Abstract
The utility model discloses a sampling resistor with high alternate magnetic field interference resistance, which comprises a resistor body that is divided into a narrow surface and a wide surface. Furthermore the sampling resistor is composed of a signal terminal, a metal connection terminal and a metal diverter. The signal terminal is equipped in the central axis of the wide surface of the resistor body. The sampling resistor has the following functions: greatly reducing effect by power frequency or other alternate magnetic field interference, reducing test error in various alternate magnetic field interference environments, effectively realizing standard realizing of various items of indexes according to test requirement, preventing resistor signal of the traditional sampling resistor for outputting terminal, reducing manufacturing material, improving utilization rate of the material, and effectively reducing cost.
Description
Technical field
The utility model relates to the electronic electric energy meter technical field of using sample resistance to measure, relates in particular to the sample resistance that a kind of anti-alternating magnetic field disturbs.
Background technology
Sample resistance is the sampled part of electronic electric energy meter current channel, is low resistance resistance, and general resistance only has hundreds of micro-ohms.When electric current flows through sample resistance, can produce the voltage signal that is directly proportional with the current value that flows through at sample resistance.When the electric energy meter of reality is used, in order to reduce the power consumption of current return, the resistance of sample resistance need design very for a short time, how faint the electric signal of output thought when electric current flows through, therefore after this electric signal need amplify by the built-in operational amplifier of the computation chip of special use, carry out relevant computing and conversion process with voltage sampling signal again, namely the high sensitivity of computation chip electric current input channel can be brought spinoff, the influence of the signal that is very easy to be interfered.
For above-mentioned reasons, traditional electronic electric energy meter is handled the relevant circuit part of electric current input channel meticulously when design, the selection, device position layout, cabling mode design, the shielding of copper layer that comprise electronic devices and components design etc., but above-mentioned measure only can improve the part interference problem of computation chip electric current input channel, can not thoroughly solve other interference.For example power frequency magnetic field disturbs or other magnetic interference.In addition, some installation environment can exist tangible alternating magnetic field to disturb, and can directly cause electronic electric energy meter shunt running under the situation that does not have load fully when serious, causes metering result's the error of calculation.
Summary of the invention
The purpose of this utility model is, at above-mentioned technological deficiency, the sample resistance that provides a kind of anti-alternating magnetic field to disturb, it is up to standard to realize effectively that under various alternating magnetic field interference environments every index is pressed test request, weakens the influence that power frequency or other alternating magnetic field disturb greatly.
For effectively addressing the above problem, the technical scheme that the utility model is taked is as follows:
The sample resistance that a kind of anti-alternating magnetic field disturbs comprises a resistance body, and this resistance body is made up of signal terminal, metal connecting terminal and metal shunt, and described signal terminal is arranged on the central axis of wide of described resistance body.
Especially, described metal connecting terminal is the copper splicing ear, and described metal shunt adopts the high-resistance alloy material to make, and described high-resistance alloy material comprises the manganin material.
Especially, wide electric conductivity of described sample resistance is greater than the electric conductivity of leptoprosopy.
The beneficial effects of the utility model: the sample resistance that the anti-alternating magnetic field that the utility model provides disturbs, signal terminal in the sample resistance is arranged on wide the central axis of resistance body, near the relative more weak centre position of induction current, weaken the influence that power frequency or other alternating magnetic field disturb greatly, under various alternating magnetic field interference environments, reduce test error, it is up to standard to realize that effectively every index is pressed test request, the sample resistance that the utility model provides does not re-use the resistance signal lead-out terminal of traditional sample resistance, reduce manufactured materials, make the utilization factor of material be improved, effectively save cost.
Below in conjunction with accompanying drawing the utility model is elaborated.
Description of drawings
Fig. 1 is the utility model sample resistance basic block diagram;
Fig. 2 is that electronic electric energy meter is formed structural representation among the utility model embodiment;
Fig. 3 be in the utility model among the embodiment system structure the sample resistance structural drawing;
Fig. 4 is that the signal under the power frequency magnetic field influence disturbs synoptic diagram among the utility model embodiment.
Reference numeral:
001 signal terminal, 002 metal shunt (manganese copper diverter), 003 metal connecting terminal (copper splicing ear), 004 magnetic line of force, 005 induction current.
Embodiment
Embodiment:
As shown in Figure 1, the sample resistance that a kind of anti-alternating magnetic field disturbs, comprise a resistance body, this resistance body is made up of signal terminal 001, metal connecting terminal 002 and metal shunt 003, and described signal terminal 001 is arranged on the central axis of wide of described resistance body.
Described metal connecting terminal 002 is the copper splicing ear, and described metal shunt 003 adopts the high-resistance alloy material to make, and described high-resistance alloy material comprises the manganin material.Wide electric conductivity of described sample resistance is greater than the electric conductivity of leptoprosopy.
As Fig. 1, Fig. 2 and shown in Figure 4, the principle of work of the method that anti-alternating magnetic field disturbs in the present embodiment is as follows:
(1) electronic electric energy meter is set, this electric energy meter is provided with a sample resistance; Described electronic electric energy meter primary structure is formed and is comprised display module, communication module, main control module and electric energy metrical module, described main control module realizes being connected alternately with above-mentioned module mutual conduction respectively, the conducting of described electric energy metrical module connects described sample resistance, and this sample resistance is realized electric current and voltage sample respectively.
(2) signalization terminal 001, metal connecting terminal 002 and metal shunt 003 are formed described sample resistance respectively; Described metal connecting terminal 002 is the copper splicing ear, and described metal shunt 003 adopts the high-resistance alloy material to make, and generally adopts manganin to form manganese copper diverter 003.
(3) described manganese copper diverter produces induction current 005 in described sample resistance central axis both sides; The ring current of the current opposite in direction that described induction current 005 produces when vertically passing wide of described sample resistance for the magnetic line of force 004 of power frequency or varying magnetic field, this electric current has skin effect, this induction current 005 of position the closer to the edge on described sample resistance is more strong, and the position at close center then intensity dies down thereupon.
(4) described signal terminal 001 is arranged on the central axis of wide of described sample resistance, near induction current 005 relative more weak position, realize the function of anti-alternating magnetic field, described induction current 005 flows through described sample resistance, produce output signal at described signal terminal 001, and the intensity of this output signal is directly proportional with wide area of alternating magnetic field and described sample resistance.
As Fig. 1, Fig. 2, Fig. 3 and shown in Figure 4, principle of work of the present utility model is: by analysis and the experiment of present embodiment, find that it mainly is the output signal that has influenced sample resistance that alternating magnetic field disturbs, when the magnetic line of force 004 of power frequency or other alternating magnetic field vertically passes wide of the good sampling electronics of electric conductivity, can produce the induction current 005 of annular in wide direction of sample resistance, the area that the intensity of signal output and the intensity of alternating magnetic field and sample resistance are wide is directly proportional, induction current 005 itself has two kinds of features, the one, induction current 005 direction of sample resistance central axis both sides is opposite, the 2nd, because the skin effect of induction current 005, location sensitive electric current 005 the closer to the edge on sample resistance is more strong, and near the location sensitive electric current 005 at center relatively a little less than, traditional sample resistance structure is because signal output part is in the leptoprosopy edge of sample resistance, be subjected to the interference of power frequency or other alternating magnetic field easily, influence the precision of value, the utility model is with the signal terminal 001(of sample resistance sampling terminal) changed to by the leptoprosopy edge on wide the central axis, thus weaken the influence that power frequency or other alternating magnetic field disturb.
The utility model is not limited to above-mentioned embodiment, and all employings and the utility model analog structure are realized all embodiments of the utility model purpose, all in the utility model protection domain.
Claims (3)
1. sample resistance that anti-alternating magnetic field disturbs, comprise a resistance body, it is characterized in that this resistance body divides leptoprosopy and wide, and be made up of signal terminal, metal connecting terminal and metal shunt, described signal terminal is arranged on the central axis of wide of described resistance body.
2. the sample resistance of anti-alternating magnetic field interference according to claim 1 is characterized in that described metal connecting terminal is the copper splicing ear, and described metal shunt adopts the high-resistance alloy material to make, and described high-resistance alloy material comprises the manganin material.
3. the sample resistance of anti-alternating magnetic field interference according to claim 1 is characterized in that wide electric conductivity of described sample resistance is greater than the electric conductivity of leptoprosopy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220548534 CN203117252U (en) | 2012-10-24 | 2012-10-24 | Sampling resistor with high alternate magnetic field interference resistance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220548534 CN203117252U (en) | 2012-10-24 | 2012-10-24 | Sampling resistor with high alternate magnetic field interference resistance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203117252U true CN203117252U (en) | 2013-08-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220548534 Expired - Lifetime CN203117252U (en) | 2012-10-24 | 2012-10-24 | Sampling resistor with high alternate magnetic field interference resistance |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203117252U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117554677A (en) * | 2024-01-11 | 2024-02-13 | 武汉嘉晨电子技术有限公司 | Current sensor |
-
2012
- 2012-10-24 CN CN 201220548534 patent/CN203117252U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117554677A (en) * | 2024-01-11 | 2024-02-13 | 武汉嘉晨电子技术有限公司 | Current sensor |
| CN117554677B (en) * | 2024-01-11 | 2024-04-23 | 武汉嘉晨电子技术有限公司 | Current sensor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP02 | Change in the address of a patent holder |
Address after: Four building, building B1, building 85, Jiangbei District, Guangdong, Huizhou 516000 Patentee after: HUIZHOU HUICHENG HUISHENG ELECTRONIC INSTRUMENT FACTORY Address before: 516000 Guangdong province Huizhou Jiangbei new industrial area A7 building five floor North Patentee before: Huizhou Huicheng Huisheng Electronic Instrument Factory |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20160809 Address after: Four building, building B1, building 85, Jiangbei District, Guangdong, Huizhou 516000 Patentee after: HUIZHOU HUIZHISHENG INDUSTRIAL CO.,LTD. Address before: Four building, building B1, building 85, Jiangbei District, Guangdong, Huizhou 516000 Patentee before: Huizhou Huicheng Huisheng Electronic Instrument Factory |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130807 |