CN203104945U - Microstrip interdigital circuit board used for microwave non-thermal effect research - Google Patents
Microstrip interdigital circuit board used for microwave non-thermal effect research Download PDFInfo
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- CN203104945U CN203104945U CN 201320039034 CN201320039034U CN203104945U CN 203104945 U CN203104945 U CN 203104945U CN 201320039034 CN201320039034 CN 201320039034 CN 201320039034 U CN201320039034 U CN 201320039034U CN 203104945 U CN203104945 U CN 203104945U
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- right sides
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- interdigital circuit
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Abstract
A microstrip interdigital circuit board used for microwave non-thermal effect research belongs to a cross field of microwave technology and chemical technology. The microstrip interdigital circuit board consists of a microstrip interdigital circuit layer (I) composed of left and right feed segments, left and right impedance transformation branches and left and right microstrip fingers, a medium layer (II) made of polytetrafluoroethylene and a metal ground layer coated with a metal layer, and is characterized in that the microstrip interdigital circuit layer (I) is composed of the left and right feed segments which have two ends looking like wrists, the left and right impedance transformation branches which are connected with the feed segments and looks like a palm, and the left and right microstrip fingers which has middle portions looking like intersected fingers; all the microstrip fingers are of the same length and the same width, and have the same inter-finger gaps and the same gaps between left-right finger roots and right-left finger tips; corners of all the microstrip transmission lines are configured to be in arc-shaped structures. The microstrip interdigital circuit board used for microwave non-thermal effect research is simple in manufacture and low in cost, and can generate larger electric field intensity than that obtained by using other methods with the same power.
Description
Technical field
The utility model belongs to the crossing domain of microwave technology and chemical technology, is specifically related to a kind of microstrip interdigital circuit board that is used for the research of microwave non-thermal effect.
Background technology
Microwave technology has become the subject of a comparative maturity through the development of decades, is used widely at aspects such as radar, communication, electronic countermeasures, industrial production and scientific researches.Successfully utilize the SN of microwave radiation 4-cyano group phenonium ion and cyanobenzene first since Richard Gedye seminar in 1986 and Raymond J.Giguere
2Nucleophilic substitution makes reaction rate improve 1240 times, and productive rate also has raising beginning in various degree, microwave energy is demonstrating huge development prospect aspect chemistry and the chemical industry, the more and more scholars application of microwave aspect chemical synthesis, extraction and catalysis that begin one's study.Yet for microwave and matter interaction mechanism, why and how microwave quickens the definite reason of chemical reaction course, and academia there is much controversy always.Some scientists think that microwave heating effect is unique factor of accelerating chemical reaction when microwave action during in chemical reaction system.Although other scientists believe firmly that then up to the present non-thermal effect is not explained fully, there is the microwave non-thermal effect really.Whether the microwave non-thermal effect exists never final conclusion of this problem on earth.The checking work of present most of non-thermal effect is based on experiment, and many scholars think that experimental verification is a kind of effective method that proof microwave non-thermal effect exists.And the experimental provision that generally is used at present non-thermal effect research is household microwave oven or is formed by the household microwave oven transformation, but because the restriction of himself various condition brings significant limitation for the research of microwave non-thermal effect.
Summary of the invention
The purpose of this utility model is a kind of microstrip interdigital circuit board that is used for the research of microwave non-thermal effect that provides at the prior art deficiency, can be the research of microwave non-thermal effect great convenience is provided.
The purpose of this utility model is realized by following technical measures:
A kind of microstrip interdigital circuit board that is used for microwave non-thermal effect research as Figure 1-3, it is the microstrip interdigital circuit layer I that is made of left and right sides feed section 3,3', left and right sides impedance conversion minor matters 2, the little band finger 1 of the 2' and the left and right sides, 1' and the dielectric layer II that is made by polytetrafluoroethylene and the microstrip interdigital circuit board of metal stratum III by adopting printing technology to make of plating layer; Be provided with dielectric layer II between microstrip interdigital circuit layer I and the metal stratum III, dielectric layer II is lower polytetrafluoroethylene of dielectric coefficient or in the epoxy resin any; III whole plating layers in metal stratum are for the feed section provides metal ground; The microstrip interdigital circuit board is characterised in that the structure of described microstrip interdigital circuit layer I is that left and right sides impedance conversion minor matters 2,2' and middle part by left and right sides feed section 3,3' and the likeness in form palm that is connected with this feed section of two ends likeness in form wrist is similar to the little band finger 1 in the left and right sides, the 1' that finger intersects and constitutes, all little band finger length are identical, width is identical, Interdigital Space is identical, about refer to that root is identical with right left finger tip gap, and arc-shaped structure is all made by the corner of all microstrip transmission lines.
The utlity model has following advantage:
1. the microstrip interdigital circuit board is a two-dimension plane structure, is convenient to reaction system, measured matter or other auxiliary equipment directly placed on itly, simultaneously also is convenient to be connected with other microwave electron equipment.
2. the microstrip interdigital circuit board is when port microwave incident power less (100W), and the electric field strength that the electric field strength of its generation obtains with additive method under the power is bigger, more helps the experimental study of microwave non-thermal effect.
Description of drawings
Fig. 1 is the end view of microstrip interdigital board structure of circuit
Fig. 2 is a microstrip interdigital circuit board microstrip interdigital circuit layer front view
Fig. 3 is the utility model embodiment schematic diagram
Fig. 4 is the experiment test result of microstrip interdigital circuit board scattering parameter
Among the figure: I-microstrip interdigital circuit layer;
The II-dielectric layer;
III-metal stratum;
1, the little band finger in the 1'-left and right sides;
2,2'-left and right sides impedance conversion minor matters;
3,3'-left and right sides feed section;
A-left and right sides feed segment length;
B-left and right sides feed section width;
C-left and right sides impedance conversion minor matters length;
D-left side impedance conversion minor matters width;
D '-right impedance conversion minor matters width;
The e-left and right sides little band finger length;
F-left and right sides little band finger width;
The g-left and right sides little band finger Interdigital Space;
Refer to root and right left finger tip gap about h-;
Embodiment
The overall structure of microstrip interdigital circuit board as Figure 1-3, the microstrip interdigital circuit board is printed on the printed circuit board.Microstrip interdigital circuit layer I that this printed circuit board (PCB) is made of left and right sides feed section 3,3', left and right sides impedance conversion minor matters 2, the interdigital unit 1 of the 2' and the left and right sides, 1' and the dielectric layer II that is made by polytetrafluoroethylene and the metal stratum III of plating layer constitute, the dielectric layer II of printed circuit board (PCB) is a polytetrafluoroethylmaterial material, dielectric coefficient is 2.65 relatively, and thickness is 2mm.
As shown in Figure 3, the structural parameters of microstrip interdigital circuit layer I obtain through numerical simulation optimization, and each several part is of a size of:
The length of left and right sides feed section 3,3' is a=15mm, width is b=5.5mm, characteristic impedance is 50 ohm, the length of left and right sides impedance conversion minor matters 2,2' is c=2.75mm, width is respectively d=6mm and d'=7.2mm, the number of the little band finger 1 in the left and right sides, 1' is respectively n=5 root and n '=6 piece, the length of all little band fingers is e=30mm, width is f=0.4mm, Interdigital Space is g=0.3mm, about refer to that root and right left finger tip gap are h=1mm, arc-shaped structure is all made by the corner of all microstrip transmission lines.This microstrip interdigital circuit board can make microwave energy concentrate in the Interdigital Space, forms intensive Electric Field Distribution, thereby improves electric field strength so that the experimental study of microwave non-thermal effect.
III whole plating layers in metal stratum are for the microstrip interdigital circuit provides metal ground.
According to the said structure parameter, processing and fabricating microstrip interdigital circuit board model and it has been carried out performance test.Test result sees for details shown in Figure 4, and when the microwave source operating frequency was 2.45GHz, scattering Can was Shuoed ∣ S
11∣=-11.3614dB ， ∣ S
21∣=-0.29605dB, the result shows that this microstrip interdigital circuit board has good transmission characteristic.
Calculate the microstrip interdigital circuit board when the port incident power is 100W through numerical simulation, the electric field strength maximum that produces in its Interdigital Space can reach 4.18 * 10
4V/m, the electric field strength that this electric field ratio adopts additive method to produce under same incident power is bigger, is more suitable in the experimental study of microwave non-thermal effect.
Claims (2)
1. one kind is used for the microstrip interdigital circuit board that the microwave non-thermal effect is studied, it is by left and right sides feed section, the microstrip interdigital circuit layer (I) that the little band finger in the left and right sides impedance conversion minor matters and the left and right sides constitutes and dielectric layer of making by polytetrafluoroethylene (II) and the microstrip interdigital circuit board of metal stratum (III) that is coated with metal level by adopting printing technology to make, the structure that it is characterized in that microstrip interdigital circuit layer (I) is the left and right sides feed section (3 by two ends likeness in form wrist, 3 ') with the left and right sides impedance conversion minor matters (2 of the likeness in form palm that is connected with this feed section, 2 ') and the little band finger (1 in the left and right sides that intersects of middle part likeness in form finger, 1 ') constitute, all little band finger length are identical, width is identical, Interdigital Space is identical, about refer to that root is identical with right left finger tip gap, and arc-shaped structure is all made by the corner of all microstrip transmission lines.
2. microstrip interdigital circuit board as claimed in claim 1, the physical dimension that it is characterized in that described microstrip interdigital circuit layer (I) is: left and right sides feed section (3,3') length is a=15mm, width is b=5.5mm, with left and right sides feed section (3, the left and right sides impedance conversion minor matters (2 that 3') are connected, 2') length is c=2.75mm, width is respectively d=6mm and d'=7.2mm, with left and right sides impedance conversion minor matters (2, the little band finger (1 in the left and right sides that 2') is connected, 1') number is respectively n=5 root and n '=6 piece, all little band finger length are e=30mm, width is f=0.4mm, Interdigital Space is g=0.3mm, about refer to that root and right left finger tip gap are h=1mm, the thickness of dielectric layer (II) is 2mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320039034 CN203104945U (en) | 2013-01-21 | 2013-01-21 | Microstrip interdigital circuit board used for microwave non-thermal effect research |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320039034 CN203104945U (en) | 2013-01-21 | 2013-01-21 | Microstrip interdigital circuit board used for microwave non-thermal effect research |
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| Publication Number | Publication Date |
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| CN203104945U true CN203104945U (en) | 2013-07-31 |
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ID=48856312
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320039034 Withdrawn - After Issue CN203104945U (en) | 2013-01-21 | 2013-01-21 | Microstrip interdigital circuit board used for microwave non-thermal effect research |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103118484A (en) * | 2013-01-21 | 2013-05-22 | 太原科技大学 | Micro-strip interdigital circuit board for microwave non-thermal effect research |
-
2013
- 2013-01-21 CN CN 201320039034 patent/CN203104945U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103118484A (en) * | 2013-01-21 | 2013-05-22 | 太原科技大学 | Micro-strip interdigital circuit board for microwave non-thermal effect research |
| CN103118484B (en) * | 2013-01-21 | 2015-05-20 | 太原科技大学 | Micro-strip interdigital circuit board for microwave non-thermal effect research |
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|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20130731 Effective date of abandoning: 20150520 |
|
| RGAV | Abandon patent right to avoid regrant |