CN203102214U - Electrode structure for capacitive touch screens - Google Patents
Electrode structure for capacitive touch screens Download PDFInfo
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- CN203102214U CN203102214U CN 201220719851 CN201220719851U CN203102214U CN 203102214 U CN203102214 U CN 203102214U CN 201220719851 CN201220719851 CN 201220719851 CN 201220719851 U CN201220719851 U CN 201220719851U CN 203102214 U CN203102214 U CN 203102214U
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Abstract
The utility model relates to an electrode structure for capacitive touch screens. The electrode structure comprises a substrate, a graphene layer and a conductive metal film layer sequentially from bottom to top, wherein a metal adhesive layer which enhances the adhesion between the graphene layer and the metal film layer is arranged between the conductive metal film layer and the graphene layer. The electrode structure has the advantages of high adhesion, corrosion resistance and good electrical conductivity, moreover, the process of a preparation method is simple, and the product yield is high.
Description
Technical field
The utility model relates to a kind of electrode structure that is used for capacitive touch screen, is specifically related to a kind of electrode structure based on the Graphene capacitive touch screen that is made of multiple layer metal.
Background technology
Touch-screen is a kind of input equipment, can conveniently realize the reciprocation of people and computing machine and other portable mobile apparatus.In recent years, be widely used in mobile InterWorking Equipment based on the capacitance touch screen of tin indium oxide (ITO) transparent conductive film, as smart mobile phone, portable panel computer.
Widely popular capacitive touch screen structure comprises (glass) substrate 100, transparency conductive electrode layer 101, edge electrodes trace layer 102 etc. and forms (Fig. 1 is the structural representation of monolithic capacitive touch screen in the prior art) at present.Wherein, transparency conductive electrode layer 101 is transparent conductive oxide (Transparent Conductive Oxide is called for short a TCO) rete, and its effect is that light is seen through, and itself can be used as the conductive electrode layer use; Edge electrodes trace layer 102 is the metal lead wire layer.Described transparency conductive electrode layer 101 needed transparency conducting layer need possess 10
-4The resistivity of the Ω cm order of magnitude.What obtain practical application at present is the ITO(tin indium oxide) rete, adopt the PVD(physical vapour deposition (PVD) in the middle of the industry) method is coated with the ITO rete, described PVD method is mainly the sputter coating mode.
ITO(Indium Tin Oxides) be indium oxide (90%In
2O
3) and tin oxide (10%SnO
2) complex be coated on and produce on (glass) or soft (plastic cement) substrate firmly.Adopt physical vapour deposition (PVD) (Physical Vapor Deposition is called for short PVD) mode to be coated with the ITO(tin indium oxide in the middle of the industry) rete.The basic skills of described PVD has vacuum evaporation, sputter, ion plating etc., and described ion plating comprises hallow cathode deposition, HCD, hot cathode ion plating, arc ion plating, activated reactive evaporation, RF ion plating, direct-current discharge ion plating etc.Wherein the most frequently used PVD method is the sputter coating mode.
Though the ito thin film of being produced by existing processes has high conductivity and transparency, can satisfy the needs of portions of electronics product to these two technical indicators substantially, still existence much is difficult to the difficulty that overcomes:
Therefore (1) ITO is very crisp frangible, is worn easily when using or crackle occurs when bending, come off and influence serviceable life.
(2) need pyroprocessing just can reach high conductivity after the ITO film forming, when using plastic substrate, because treatment temperature is limited, film conductivity and transparency are all lower.
(3) be subjected to the influence of starting material and production equipment, technology, ito thin film will be more and more expensive.This is that its reserves are very limited because on the one hand, the principal ingredient of ITO is an indium, and the present whole world is produced per year and is about 500 tons; On the other hand, the film-forming process of ITO must use high-quality ITO target, the required high-quality ITO target production technology of film forming again major control in countries such as Japan, the U.S., Europe.
Above technological deficiency and future market trend make the development new material replace ITO becomes the problem that industry member is badly in need of solution.Feasibility study to the equivalent material of ITO has carried out a lot of years, and potential candidate material comprises conducting polymer, zinc paste or other oxides, carbon nano-tube and nearest Graphene etc.
Graphene has the splendid performance as transparent conductive material, is embodied in:
(1) transmissivity of Graphene is at visible light wave range and Wavelength-independent.Therefore, transmission of visible light is less because of the different variations that cause of wavelength, and transmitted spectrum is almost flat condition.
(2) tone of Graphene is colourless fully.Conductive film colourless just easy more on touch display screen reproduced image color verily.
(3) Graphene has the transmissivity up to 97.4%.
When (4) Graphene was in transmitance maintains 95% scope, square resistance still can reach 125 Ω/, had reached quality standard (400～900 Ω/) of industry member transparency electrode.
In transparent conductive material, there are this those long relations that disappear in ground known in this field between light transmittance and the square resistance, promptly increase the thickness of graphene film in order to reduce square resistance, and transmissivity can descend thereupon; On the contrary, the attenuate thickness in order to improve light transmittance, square resistance will rise.So, guaranteeing under the prerequisite of transmittance,, the square resistance of conducting film to be reduced to minimum by technological approaches such as suitable increase Graphene thickness and doping, this respect Graphene has very big potentiality.
At present, substitute in the ITO materials process at the exploitation Graphene, Graphene is applied to the touch-screen product scope as transparent conductive material and is generally had an optimistic view of.But but there is the problem that can not obtain more satisfactory effect aspect adhesion, electric conductivity and the corrosion-resistant/oxidisability three simultaneously in the electrode layer on Graphene.Those skilled in the art select for use the higher metal of conductances such as Al, Ag as electrode layer in order to improve the electric conductivity of electrode layer, but the adhesion of itself and Graphene is bad, is easy to occur the phenomenon that rete is easy to come off, be easy to oxidation; And in order to improve the adhesion of electrode layer, prior art selects for use the good metal levels such as Cu, Ni of evaporation coating method preparation and Graphene adhesion as electrode layer, but its electric conductivity is very bad, and rete is easy to oxidation, and is not corrosion-resistant; And in order to improve the corrosion-resistant/oxidisability of electrode layer, prior art is selected inoxidizability again, and metal such as Mo is as electrode layer preferably, and similarly, the performance of the electric conductivity of described antioxygenic property preferred metal or adhesion aspect is very bad again.
How to solve these problems that the electrode layer based on the capacitive touch screen of Graphene exists, become the restriction Graphene is applied to the touch-screen product as transparent conductive material technical bottleneck.
Therefore, use and alternative ITO rete for grapheme material is dropped into fast, this area need develop a kind of have high adhesion force, high conductivity and can improve whole rete corrosion resistance can be used for electrode structure based on the capacitive touch screen of Graphene transparent conductive film layer.
The utility model content
At the deficiencies in the prior art, the purpose of this utility model is to provide a kind of electrode structure based on the capacitive touch screen of Graphene transparent conductive film layer of can be used for high adhesion force.The electrode structure that the utility model provides is attached on the graphene conductive film, can improve transmitance, the conductivity of transparent conductive film layer, or can improve the corrosion resistance of the whole rete of capacitive touch screen simultaneously.Simultaneously, electrode structure that the utility model provides and graphene conductive film be laser ablation simultaneously, combine with existing Graphene technology of preparing, evade existing ITO material, when significantly reducing touch-screen production cost, increase substantially product yield and reliability, improve the weatherability of product.
The utility model is broken through the technology prejudice that prior art " only adopts one deck conducting metal rete to solve all metal lead wire electrode technology problems based on the capacitive touch screen of Graphene ", selects for use two-layer even multiple layer metal to solve the different technical barrier that the capacitive touch screen based on Graphene exists.
The utility model is achieved by the following technical solution:
A kind of electrode structure that is used for capacitive touch screen, described electrode structure comprise substrate, graphene layer and conducting metal rete from the bottom to top successively; Wherein, be provided with the metal adhesion layer that increases graphene layer and metallic diaphragm adhesion between described conducting metal rete and the graphene layer, promptly described electrode structure comprises substrate, graphene layer, metal adhesion layer and conducting metal rete from the bottom to top successively.
The utility model solves conducting metal rete and the bad problem of graphene layer adhesion in the prior art by the mode of establishing the metal adhesion layer between conducting metal rete and graphene layer.
Has stronger adhesion between metal adhesion layer described in the utility model and the Graphene, those skilled in the art should understand, the metal that has than strong adhesive force between the disclosed and Graphene of any prior art or new technology all can be used for the utility model.The metal adhesion layer need have good tack with the conducting metal rete equally, but because be metal material equally, performance is similar substantially, and adhesion between the two is well the very known fact, need not too much to consider the intermiscibility of itself and conducting metal rete.
Preferably, the metal material of described metal adhesion layer be can with the combination of any a kind or at least 2 kinds in the metal of Graphene solid solution.With the metal of Graphene generation solid solution be well-known to those skilled in the art; typical but non-limiting example has nickel, copper, rubidium, cobalt, palladium, platinum, iridium or ruthenium etc.; in the preparation field of graphene film, the technician can utilize " can with Graphene generation solid solution " such characteristic to select metal substrate in the CVD method usually.
Further preferably, the combination that can be selected from any a kind or at least 2 kinds in metal Ni, metal Cu, metal Ti, the Metal Cr described in the utility model with the metal of Graphene solid solution, described combination is NiCu alloy, NiTi alloy, CuCr alloy, NiCr alloy etc. for example, preferable alloy Ni and/or metal Cu, the further alloy of preferable alloy Ni and metal Cu.
Preferably, the thickness of described metal adhesion layer is 30-350nm, for example 32nm, 37nm, 45nm, 49nm, 53nm, 58nm, 67nm, 85nm, 92nm, 120nm, 180nm, 250nm, 265nm, 287nm, 312nm, 335nm, 348nm etc., preferred thickness is 50-300nm.
As optimal technical scheme, be provided with the coat of metal of the not oxidized and corrosion of protection conducting metal rete on the conducting metal rete of the electrode structure that is used for capacitive touch screen described in the utility model; Be that described electrode structure comprises substrate, graphene layer, metal adhesion layer, conducting metal rete and coat of metal from the bottom to top successively.
The utility model by the mode of on the conducting metal rete, establishing coat of metal solve that the conducting metal rete is corroded easily in the prior art, oxidized problem.
Corrosion-resistant, sludge proof characteristic that coat of metal described in the utility model has.Similarly, those skilled in the art should understand, any prior art or new technology be disclosed to be had metal corrosion-resistant, the resistance to oxidation characteristic and all can be used for the utility model, does not do concrete qualification for which kind of metal the utility model of concrete selection.Any compact film and character own of can forming is difficult for metal with oxygen generation oxidation reaction and all can be applicable in the middle of the utility model as corrosion-resistant anti-oxidation metal protective seam.Described have a metal corrosion-resistant, the resistance to oxidation characteristic, and typical but non-limiting example has molybdenum, zirconium, nickel, titanium, chromium, niobium etc.
Preferably; the metal material of coat of metal described in the utility model is the combination of any a kind or at least 2 kinds in the oxidation and corrosion metal; the combination of any a kind or at least 2 kinds in preferable alloy Ni, metal M o, the metal Ti; described combination is the combination, the combination of metal Ti/metal M o, the combination of metal Ti/metal Ni, the combination of metal Ni/ metal M o/ metal Ti etc. of metal Ni/ metal M o for example, further preferable alloy Mo.
Preferably; the thickness of described coat of metal is 30-350nm; for example 32nm, 37nm, 45nm, 49nm, 53nm, 58nm, 67nm, 85nm, 92nm, 120nm, 180nm, 250nm, 265nm, 287nm, 312nm, 335nm, 348nm etc., preferred thickness is 50-300nm.
Preferably, the metal material of conducting metal rete described in the utility model is the combination of any a kind or at least 2 kinds in the conducting metal, preferred resistivity≤3.0 * 10
-8The conducting metal of Ω m, the selection of conducting metal are technology well known in the art, disclosed resistivity≤3.0 * 10 that meet of any prior art or new technology
-8The conducting metal of Ω m all can be used for the utility model, and typical but non-limiting example has gold, silver, aluminium etc.
Preferably, the metal material of conducting metal rete described in the utility model is the combination of any a kind or at least 2 kinds among metal A g, metal A l, the metal A u, described combination is the combination, the combination of metal A l/ metal A u, the combination of metal A g/ metal A u, the combination of metal A g/ metal A l/ metal A u etc. of metal A g/ metal A l for example, further any a kind among preferable alloy Ag, metal A l, the metal A u.
Preferably, the thickness of described conducting metal rete is 140-700nm, for example 143nm, 152nm, 165nm, 180nm, 205nm, 254nm, 285nm, 310nm, 345nm, 385nm, 402nm, 437nm, 485nm, 520nm, 585nm, 630nm, 674nm, 685nm etc., preferred thickness is 200-600nm.
Preferably, the gross thickness of described metal adhesion layer, conducting metal rete and coat of metal is 200-1000nm, for example 210nm, 280nm, 330nm, 360nm, 480nm, 520nm, 600nm, 750nm, 880nm, 930nm, 980nm, 992nm etc.
Preferably, described graphene layer is that thickness is the single or multiple lift graphene layer of 0.5-3nm, preferred monatomic graphene layer, or thickness is the multi-layer graphene layer of 1-3nm.The thickness of described graphene layer can be 0.53nm, 0.57nm, 0.6nm, 0.66nm, 0.74nm, 0.85nm, 0.92nm, 1.0nm, 1.14nm, 1.25nm, 1.36nm, 1.43nm, 1.57nm, 1.88nm, 2.03nm, 2.54nm, 2.67nm, 2.78nm, 2.85nm, 2.94nm etc.The thickness of Graphene transparency conducting layer is greater than 3nm, and transmission of visible light is low, influences the transparency of nesa coating; The thickness of Graphene transparency conducting layer is less than 0.5nm, and side's resistance increases, and influences the conductivity of nesa coating.
Preferably, described substrate thickness is 0.3-2mm, for example 0.33mm, 0.37nm, 0.48mm, 0.6mm, 0.74mm, 0.92mm, 1.14mm, 1.35mm, 1.46mm, 1.53mm, 1.77mm, 1.88mm etc.; Be preferably 0.3-1.1mm, be preferably 0.3-1.1mm, described substrate is preferably glass substrate or pet substrate.
The typical but non-limiting example of electrode structure that is used for capacitive touch screen described in the utility model can be: described electrode structure comprises substrate, graphene layer, NiCu alloy-layer, Al metal level and Mo metal level successively on down; Perhaps, described electrode structure comprises substrate, graphene layer, TiCu alloy-layer, Au metal level and Ni metal level successively on down; Perhaps, described electrode structure comprises substrate, graphene layer, TiCr alloy-layer, Ag metal level and Ti metal level successively on down; Perhaps, described electrode structure comprises substrate, graphene layer, Cu metal level, Au metal level and Mo metal level etc. successively on down.
Preferably, described metal adhesion layer is the NiCu alloy-layer, and preferably, the thickness of described NiCu alloy-layer is 30-350nm, and preferred thickness is 50-300nm.
Preferably, described conducting metal rete is the Al metal level; Preferably, described Al metal layer thickness is 140-700nm, and preferred thickness is 200-600nm.
Preferably, described coat of metal is the Mo metal level; Preferably, described Mo metal layer thickness is 30-350nm, and preferred thickness is 50-300nm.
Copper nickel (NiCu) alloy claims copper-nickel alloy again, is to be the acid bronze alloy of main adding elements with nickel, is silvery white in color, and metallic luster is arranged.Ni metal itself can dissolve each other with grapheme material, so deposition Ni material can guarantee the adhesion of electrode structure on grapheme material, the central Cu element of NiCu alloy can improve the electric conductivity of bottom NiCu alloy simultaneously.
20 ℃ resistivity of aluminium (Al) simple substance is 2.65 * 10-8 Ω m.The utility model depositing Al layer on the NiCu metal level can significantly improve the conductivity of entire electrode structure.
Molybdenum (Mo) is silvery white metal, and is hard and tough and tensile, is mainly used in steel and iron industry, adds molybdenum in the stainless steel, can improve the corrosion resistance of steel; In cast iron, add molybdenum, can improve the intensity and the anti-wear performance of iron.Molybdenum can form fine and close metallic diaphragm in the vacuum magnetic-control sputtering film-plating process, and molybdenum itself is not easy to oxygen generation oxidation reaction; The utility model deposits the Mo layer of the superiors on the Al metallic diaphragm, the entire electrode structure is played the effect of protection, guarantees the reliability in hot and humid environment entire product; Improve the yield of product.
When the electrode structure that is used for capacitive touch screen described in the utility model comprised substrate, graphene layer, metal adhesion layer and conducting metal rete from the bottom to top successively, its preparation method was: transfer printing graphene film on substrate; Make on the graphene layer of electrode district plated metal adhesion layer and conducting metal rete successively then, obtaining the electrode district structure is the layer structure of substrate/graphene film/metal adhesion layer/conducting metal rete; The last patterned electrode structure that obtains capacitive touch screen.
Preferably, described method is: transfer printing graphene film on substrate; Make then on the graphene layer of electrode district and deposit the metal adhesion layer of NiCu alloy and the conducting metal rete of metal A l successively, obtaining the electrode district structure is the layer structure of substrate/graphene film/NiCu alloy film/Al metal film; The last patterned electrode structure that obtains capacitive touch screen.
When the described electrode structure that is used for capacitive touch screen comprised substrate, graphene layer, metal adhesion layer, conducting metal rete and coat of metal from the bottom to top successively, described method was: transfer printing graphene film on substrate; Make on the graphene layer of electrode district plated metal adhesion layer, conducting metal rete and coat of metal successively then, obtaining the electrode district structure is the layer structure of substrate/graphene film/metal adhesion layer/conducting metal rete/coat of metal; The last patterned electrode structure that obtains capacitive touch screen.
Preferably, described method is: transfer printing graphene film on substrate; Make then to deposit NiCu alloy, metal A l and metal M o successively on the graphene layer of electrode district and obtain metallic diaphragm, obtaining the electrode district structure is the layer structure of substrate/graphene film/NiCu alloy film/Al metal film/Mo metal film; The last patterned electrode structure that obtains capacitive touch screen.
Preferably, the method for plated metal adhesion layer, conducting metal rete and coat of metal is a magnetically controlled sputter method;
Preferably, the method for deposition NiCu alloy, metal A l and metal M o is a magnetically controlled sputter method.
The step of described " make on the graphene layer of electrode district and deposit different metal level (for example metal adhesion layer, conducting metal rete or coat of metal) successively; obtain electrode district structure (for example substrate/graphene film/metal adhesion layer/conducting metal rete or substrate/graphene film/metal adhesion layer/conducting metal rete/coat of metal) "; can be the mode of any a kind of realization " only the structure of electrode district is substrate/graphene film/metal adhesion layer/conducting metal rete/coat of metal " of expecting of those skilled in the art, typical but non-limiting example has:
First kind of example: earlier any 1 layer, 2 layers or 3 layers in plated metal adhesion layer, conducting metal rete or the coat of metal on the substrate of graphene film are arranged, obtain covering the metal-layer structure of whole graphene film in whole transfer printing; Metal material with the metal level of touch-screen photic zone etches away then, only obtain the structure of electrode district and be the layer structure of substrate/graphene film/metal adhesion layer/conducting metal rete or only the structure of electrode district be the layer structure of substrate/graphene film/metal adhesion layer/conducting metal rete/coat of metal.
Second kind of example: by the mode of " mask ", the touch-screen photic zone is hidden earlier; And then any 1 layer, 2 layers or 3 layers in plated metal adhesion layer, conducting metal rete or the coat of metal obtain metal level on substrate; Remove mask at last, only obtain the structure of electrode district and be the layer structure of substrate/graphene film/metal adhesion layer/conducting metal rete or only the structure of electrode district be the layer structure of substrate/graphene film/metal adhesion layer/conducting metal rete/coat of metal.
The preparation method who is used for the electrode structure of capacitive touch screen described in the utility model comprises the steps:
(1) preparation graphene film;
(2) graphene film that step (1) is made is transferred on the substrate, obtains the layer structure of substrate/graphene film;
(3) on the layer structure of substrate/graphene film that step (2) obtains, deposit the metal of corresponding metal adhesion layer, the metal of conducting metal rete and the metal of coat of metal successively, obtain the layer structure of substrate/graphene film/metal adhesion layer/conducting metal rete/coat of metal;
(3a ') etches away the metal layer material of touch-screen photic zone by the etched mode of exposure imaging, obtains the touch screen that electrode district only has the layer structure of substrate/graphene film/metal adhesion layer/conducting metal rete/coat of metal;
(4) the patterned electrode structure that obtains capacitive touch screen;
Or the preparation method who is used for the electrode structure of capacitive touch screen described in the utility model comprises the steps:
(1) preparation graphene film;
(2) graphene film that step (1) is made is transferred on the substrate, obtains the layer structure of substrate/graphene film;
(3b ') covers the photic zone of touch-screen with metal mask, obtains the only layer structure of the substrate/graphene film in exposed electrode district;
(3) on the layer structure of the substrate/graphene film in the only exposed electrode district that step (3b ') obtains, deposit the metal of corresponding metal adhesion layer, the metal of conducting metal rete and the metal of coat of metal successively, obtain the touch screen that electrode district only has the layer structure of substrate/graphene film/metal adhesion layer/conducting metal rete/coat of metal;
(4) the patterned electrode structure that obtains capacitive touch screen.
With the electrode structure that is used for capacitive touch screen is that substrate/graphene layer/NiCu alloy-layer/Al metal level/Mo metal level is an example, and its preparation method is: transfer printing graphene film on substrate; Make then on the graphene layer of electrode district and deposit NiCu alloy, metal A l and metal M o successively, obtaining the electrode district structure is the layer structure of substrate/graphene film/NiCu alloy film/Al metal film/Mo metal film; The last patterned electrode structure that obtains capacitive touch screen.Preferably, the method for deposition NiCu alloy, metal A l and metal M o is a magnetically controlled sputter method.
The step of described " make on the graphene layer of electrode district and deposit NiCu alloy, metal A l and metal M o successively; obtaining the electrode district structure is the layer structure of substrate/graphene film/NiCu alloy film/Al metal film/Mo metal film ", can be the mode of any a kind of realization " only the structure of electrode district is substrate/graphene film/NiCu alloy film/Al metal film/Mo metal film " of expecting of those skilled in the art, typical but non-limiting example has:
First kind of example: earlier have deposition NiCu alloy, metal A l and metal M o on the substrate of graphene film to obtain covering the metal level of whole graphene film in whole transfer printing; Metal layer material with the touch-screen photic zone etches away then, and only obtaining, the structure of electrode district is the layer structure of substrate/graphene film/NiCu alloy film/Al metal film/Mo metal film.
Second kind of example: by the mode of " mask ", the touch-screen photic zone is hidden earlier; And then deposition NiCu alloy, metal A l and metal M o obtain metal level on substrate; Remove mask at last, only obtaining, the structure of electrode district is the layer structure of substrate/graphene film/NiCu alloy film/Al metal film/Mo metal film.
Described a kind of preparation method who is used for the electrode structure of capacitive touch screen comprises the steps:
(1) preparation graphene film;
(2) graphene film that step (1) is made is transferred on the substrate, obtains the layer structure of substrate/graphene film;
(3) on the layer structure of substrate/graphene film that step (2) obtains, deposit NiCu alloy, metal A l and metal M o successively and obtain metallic diaphragm, obtain the layer structure of substrate/graphene film/NiCu alloy film/Al metal film/Mo metal film;
(3a ') etches away the metallic diaphragm material of touch-screen photic zone by the etched mode of exposure imaging, obtains the touch screen that electrode district only has substrate/graphene film/NiCu alloy film/Al metal film/Mo metal film stratiform structure;
(4) the patterned electrode structure that obtains capacitive touch screen.
Perhaps, described a kind of preparation method who is used for the electrode structure of capacitive touch screen comprises the steps:
(1) preparation graphene film;
(2) graphene film that step (1) is made is transferred on the substrate, obtains the layer structure of substrate/graphene film;
(3b ') covers the photic zone of touch-screen with metal mask, obtains the only layer structure of the substrate/graphene film in exposed electrode district;
(3) on the layer structure of the substrate/graphene film in the only exposed electrode district that step (3b ') obtains, deposit NiCu alloy, metal A l and metal M o successively and obtain metallic diaphragm, obtain the touch screen that electrode district only has the layer structure of substrate/graphene film/NiCu alloy film/Al metal film/Mo metal film;
(4) the patterned electrode structure that obtains capacitive touch screen.
Wherein, the described preparation method of graphene of step (1) is selected from any a kind in chemical vapour deposition technique, chemical dispersion method or the heating SiC method, further preferred chemical vapour deposition technique.
The open day 2011-10-19 of CN102220566A() method that a kind of chemical vapor deposition prepares individual layer and multi-layer graphene is disclosed, its step is that metal substrate is placed vacuum tube furnace or vacuum atmosphere oven, in removing vacuum chamber under the situation of oxygen, hydrogen is injected vacuum chamber, and be warming up to 800-1000 ℃, again carbon-source gas is injected vacuum chamber, promptly obtain depositing the metal substrate of Graphene.
Preferably, the described preparation method of graphene of step (1) is a chemical vapour deposition technique, can adopt the described method preparation as CN102220566A, is specially at 800-1000 ℃ of following cracking carbon source gas, at substrate surface growth graphene film.
In the described chemical vapour deposition technique, described carbon source gas is for only containing the organic gas of carbon atom and hydrogen atom, the alkane of preferred C1-C4, the alkene of C2-C4, the combination of any a kind or at least 2 kinds in the alkynes of C2-C3, further optimization methane, ethane, ethene, acetylene, propane, n-butene, isobutylene, 1, the 2-butadiene, 1, the 3-butadiene, along butadiene, anti-dibutene, normal butane, isobutane, propylene, the combination of any a kind or at least 2 kinds in the trimethylene, described combination for example methane the combination of ethane, ethene the combination of n-butene, acetylene trimethylene the combination etc. of methane, special optimization methane and or acetylene.
In the described chemical vapour deposition technique, described substrate is selected from metal forming or invests metallic film on the matrix, and described metal is selected from the combination of any a kind or at least 2 kinds in nickel, copper, rubidium, cobalt, palladium, platinum, iridium or the ruthenium; The preferred Copper Foil of described substrate, nickel foil, rubidium paper tinsel, ruthenium paper tinsel or be coated with the combination of any a kind or at least 2 kinds in the matrix of metal nickel film, further preferred Copper Foil.
Preferably, the described graphene film of step (1) is monatomic graphene layer, or thickness is the graphene film of 0.5-3nm, preferred monatomic graphene layer, or thickness is the graphene film of 1-3nm.
Step (2) is described to be transferred to graphene film in the step on the substrate, the method of transfer printing is selected from any a kind in polymethylmethacrylate (PMMA) transfer method, heat release adhesive tape transfer method, dimethyl silicone polymer (PDMS) transfer method, preferred polymethylmethacrylate transfer method.
Preferably; the deposition process of the metal of the metal of the described metal adhesion layer of step (3), the metal of conducting metal rete and coat of metal is selected from any a kind in the PVD method; preferred any a kind in vacuum evaporation deposition plated film, sputtering sedimentation plated film, ion-plating deposition plated film; further preferred sputtering sedimentation coating method, preferred especially magnetron sputtering deposition coating method.
The sputtering sedimentation plated film is to utilize energetic ion impact material target to go out particle and be deposited on film forming method on the surface of the work from its surface sputtering.The mechanism of sputtering sedimentation plated film is: in certain vacuum condition (about 10
-1Pa) in Sputting film-plating apparatus (as shown in Figure 2), feed Ar gas under, add positive negative electricity for target, vacuum-chamber wall, form glow discharge; Electronics becomes high energy electron (electric field potential is high more, and electron energy is high more) during glow discharge under electric field action; High energy electron collision Ar atom, making the Ar atomic ionization become positive ion (is Ar
+Ion) and secondary electron; Secondary electron also becomes high energy electron under electric field action, can continue to collide the Ar atom and produce ionization, thereby continue to produce more Ar
+Ion and secondary electron; So circulation promptly forms " snowslide "; And its inner electronics generation transition during Ar atom generation ionization can be observed in the vacuum cavity 104 this moment, and that ionization takes place is many more in the strength more for the radiance that form between target and substrate, radiance; This time space forms plasma; Ar
+Ion flies to target surface (because target is a negative electrode, electronegative position) under electric field action, and the collision target material surface, sputters the target particle; The target particle flies to substrate, and deposition forms thin film on substrate.
The sputtering sedimentation plated film is a technology well known in the art, repeats no more herein.Fig. 2 is the principle schematic of sputtering sedimentation plated film.The sputtering sedimentation coating apparatus has comprised vacuum cavity 104(and has been also referred to as vacuum chamber in (as shown in Figure 2)), target 105, substrate 106; Vacuum cavity 104 provides a vacuum environment, and vacuum cavity ground connection in the sputter coating mode is anode simultaneously, and target 105 is the negative electrode in the sputter coating mode; Substrate 106 can have three kinds of modes in the sputter coating mode: ground connection, suspension or connect a certain current potential (being bias voltage) separately.
Magnetron sputtering is in order to carry out high-speed sputtering under infrabar, must to improve the ionization level of gas effectively.By introduce magnetic field on target cathode surface, utilize magnetic field that the constraint of charged particle is improved plasma density to increase the method for sputtering raste.At present, magnetron sputtering is widely used in the magnetically controlled DC sputtering vacuum connection degree coating film production line in the glass for flat panel display coating apparatus, is technology well known to those skilled in the art.The utility model preferably adopts the method for magnetron sputtering to deposit NiCu alloy, Al metal and Mo metal successively on graphene layer.
Preferably, the process conditions of the described sputtering sedimentation plated film of step (3) are: vacuum tightness 0.3～0.6Pa, and voltage 200～600V, the material of target is: NiCu alloy target material, Al metal targets and Mo metal targets, working gas: argon gas.
Preferably, the process conditions of the magnetron sputtering deposition plated film of the described NiCu alloy-layer of step (3) are: vacuum tightness 0.3～0.6Pa, and voltage 200～600V, the material of target are the NiCu alloy, working gas is an argon gas; The process conditions of the magnetron sputtering deposition plated film of described Al metal level are: vacuum tightness 0.3～0.6Pa, and voltage 200～600V, the material of target are metal A l, working gas is an argon gas; The process conditions of the magnetron sputtering deposition plated film of described Mo metal level are: vacuum tightness 0.3～0.6Pa, and voltage 200～600V, the material of target are metal M o, working gas is an argon gas.
Preferably, the described patterning of step (4) is selected from photoetching or laser ablation, preferred laser ablation.
In the prior art,, the method for electrode district patterning is had much in the touch-screen field.The described patterning of step (4) is selected from photoetching or laser ablation.The described laser ablation that is patterned as of step (4).
Preferably, described laser ablation adopts laser direct-writing formula etching or the direct etching of laser.So-called laser direct-writing utilizes the laser beam of intensity variable that the erosion resistant that is coated in substrate surface is become dose exposure exactly, and the back of developing forms desired profile on the resist layer surface.The laser direct-writing technology is the ordinary skill in the art, as Yan Shuhua etc. in summary " progress of binary optical device direct writing technology " literary composition, done for laser direct-writing know-why, method etc. and to have summarized (the progress of binary optical device direct writing technology, Yan Shuhua etc., semiconductor optoelectronic, 2002,23(3): 159-162).The direct etching of so-called laser adopts near infrared or Ultra-Violet Laser at electrode district surface direct sintering rete, to the method for electrode district patterning exactly.The laser ablation method is carried out patterning to graphene film, does not need mask, can directly obtain electrode pattern.
Compared with prior art, the utlity model has following beneficial effect:
1, the utility model is broken through the technology prejudice that prior art " only adopts one deck conducting metal rete to solve all technical matterss based on the capacitive touch screen of Graphene ", select for use two-layer even multiple layer metal to solve the different technical barrier that the capacitive touch screen based on Graphene exists, the technical matters that solves based on the capacitive touch screen of Graphene for this area provides a kind of brand-new direction;
2, the utility model solves the problem of poor adhesive force between Graphene and the conducting metal rete by establish the metal adhesion layer between graphene layer and conducting metal rete; By on the conducting metal rete, establishing coat of metal, solve the problem of metal adhesion layer and the easy burn into oxidation of conducting metal rete; In addition, because the conductivity height of conducting metal rete has good electrical conductivity, thereby gives the electrode structure good electrical conductivity;
Especially in optimal technical scheme, on grapheme material, deposit NiCu alloy-layer, Al metal level and Mo metal level successively and obtain metallic diaphragm, in the NiCu alloy-layer, the characteristic that the Ni element can dissolve each other with grapheme material, improved the adhesion of Graphene transparent conductive film and electrode structure, solved a little less than existing Graphene transparent conductive film and the electrode material adhesion problem that causes electrode to come off easily; Utilize in the NiCu alloy-layer, Cu element good electrical conductivity has improved the electric conductivity of electrode structure; Utilize the good electric conductivity of Al metal, significantly improve the electric conductivity of electrode district metallic diaphragm; Utilize the stability of Mo metal, whole metallic diaphragm is played the effect of protection, guarantee the reliability of whole capacitor formula touch-screen product in hot and humid environment; Improve the product yield of capacitive touch screen;
3, the electrode structure of the capacitive touch screen that provides of the utility model and the strong adhesion of graphene layer can satisfy the needs of current preparation Graphene capacitive touch screen; And good conductivity, good corrosion resistance all can satisfy the requirement of large-scale production and application.
Description of drawings
Fig. 1 is the structural representation of monolithic capacitive touch screen in the prior art;
Fig. 2 is the structural representation of sputtering sedimentation coating apparatus;
Fig. 3 is the embodiment 1 described electrode structure synoptic diagram that is used for capacitive touch screen;
Fig. 4 is the structural representation of embodiment 6 described capacitive touch screens;
100-substrate, 101-transparent conductive film layer; 102 edge electrodes trace layer; The 104-vacuum cavity; The 105-target; The 106-substrate; U1, U2 are the voltage that is carried on the Sputting film-plating apparatus; The 201-graphene layer; The 202-NiCu alloy-layer; The 203-Al metal level; The 204-Mo metal level.
Embodiment
For ease of understanding the utility model, it is as follows that the utility model is enumerated embodiment.Those skilled in the art should understand that described embodiment helps to understand the utility model, should not be considered as concrete restriction of the present utility model.
Embodiment 1
A kind of electrode structure that is used for capacitive touch screen, described electrode structure comprise glass substrate, graphene layer, NiCu alloy-layer, Al metal level and Mo metal level from the bottom to top successively;
Wherein, the thickness of NiCu alloy-layer is 30nm; The Al metal layer thickness is 140nm; The Mo metal layer thickness is 30nm; Thickness of glass substrate is 2mm; Graphene layer thickness is 0.5nm; Fig. 3 is the embodiment 1 described structural representation that is used for the transparent conductive film layer of capacitive touch screen.
The preparation method:
The preparation method of the electrode structure of described capacitive touch screen:
(1) adopt the CN102220566A disclosed method to prepare graphene film, be specially: metal substrate is placed vacuum tube furnace, in removing vacuum chamber under the situation of oxygen, hydrogen is injected vacuum chamber, and be warming up to 1000 ℃, again methane gas is injected vacuum chamber, promptly obtain depositing the metal substrate of Graphene; The atom number of plies of described Graphene is an individual layer; The thickness of described graphene film is 0.5nm;
(2) graphene film that step (1) is made is that medium is transferred on the substrate with PDMS, obtains the layer structure of graphene film/substrate;
(3) on the layer structure of substrate/graphene film that step (2) obtains, adopt magnetically controlled sputter method to deposit NiCu alloy, metal A l and metal M o successively and obtain metallic diaphragm, obtain the layer structure of substrate/graphene film/NiCu alloy film/Al metal film/Mo metal film; Metallic diaphragm thickness 200nm; The thickness of NiCu alloy-layer is 30nm; The Al metal layer thickness is 140nm; The Mo metal layer thickness is 30nm;
Wherein, the process conditions of the magnetron sputtering deposition plated film of NiCu alloy-layer are: vacuum tightness 0.6Pa, and voltage 200V, the material of target is: NiCu alloy, working gas: argon gas;
The process conditions of the magnetron sputtering deposition plated film of Al metal level are: vacuum tightness 0.3Pa, and voltage 600V, the material of target is: metal A l, working gas: argon gas;
The process conditions of the magnetron sputtering deposition plated film of Mo metal level are: vacuum tightness 0.6Pa, and voltage 200V, the material of target is: metal M o, working gas: argon gas;
(3a ') by the gold-tinted processing procedure, adopt the known exposure imaging of industry to protect the mode of etching metal rete again, etch away the metallic diaphragm material of touch-screen photic zone, obtain the touch screen that electrode district only has substrate/graphene film/NiCu alloy film/Al metal film/Mo metal film stratiform structure;
(4) obtain the electrode structure of capacitive touch screen through the laser ablation patterning.
Embodiment 2
A kind of electrode structure that is used for capacitive touch screen, described electrode structure comprise glass substrate, graphene layer, NiCu alloy-layer, Al metal level and Mo metal level from the bottom to top successively;
Wherein, the thickness of NiCu alloy-layer is 150nm; The Al metal layer thickness is 700nm; The Mo metal layer thickness is 150nm; Thickness of glass substrate is 0.3mm; Graphene layer thickness is 3nm.
The preparation method:
The preparation method of the electrode structure of described capacitive touch screen:
(1) adopt the CN102220566A disclosed method to prepare graphene film, be specially: metal substrate is placed vacuum tube furnace, in removing vacuum chamber under the situation of oxygen, hydrogen is injected vacuum chamber, and be warming up to 1000 ℃, again methane gas is injected vacuum chamber, promptly obtain depositing the metal substrate of Graphene; The atom number of plies of described Graphene is an individual layer; The thickness of described graphene film is 3nm;
(2) graphene film that step (1) is made is that medium is transferred on the substrate with PDMS, obtains the layer structure of graphene film/substrate;
(3) on the layer structure of substrate/graphene film that step (2) obtains, adopt magnetically controlled sputter method to deposit NiCu alloy, metal A l and metal M o successively and obtain metallic diaphragm, obtain the layer structure of substrate/graphene film/NiCu alloy film/Al metal film/Mo metal film; Metallic diaphragm thickness 1000nm; The thickness of NiCu alloy-layer is 150nm; The Al metal layer thickness is 700nm; The Mo metal layer thickness is 150nm;
Wherein, the process conditions of the magnetron sputtering deposition plated film of NiCu alloy-layer are: vacuum tightness 0.4Pa, and voltage 300V, the material of target are the NiCu alloy, working gas is an argon gas;
The process conditions of the magnetron sputtering deposition plated film of Al metal level are: vacuum tightness 0.6Pa, and voltage 200V, the material of target are metal A l, working gas is an argon gas;
The process conditions of the magnetron sputtering deposition plated film of Mo metal level are: vacuum tightness 0.5Pa, and voltage 400V, the material of target are metal M o, working gas is an argon gas;
(3a ') etches away the metallic diaphragm material of touch-screen photic zone by the etched mode of exposure imaging, obtains the touch screen that electrode district only has substrate/graphene film/NiCu alloy film/Al metal film/Mo metal film stratiform structure;
(4) obtain the electrode structure of capacitive touch screen through the laser ablation patterning.
Embodiment 3
A kind of electrode structure that is used for capacitive touch screen, described electrode structure comprise pet substrate, graphene layer, NiCu alloy-layer, Al metal level and Mo metal level from the bottom to top successively;
Wherein, the thickness of NiCu alloy-layer is 120nm; The Al metal layer thickness is 500nm; The Mo metal layer thickness is 180nm; Pet substrate thickness is 1.6mm; Graphene layer thickness is 2nm.
The preparation method:
The preparation method is identical with embodiment 1, and only the process conditions of the magnetron sputtering deposition plated film of the described NiCu alloy-layer of step (3) are: vacuum tightness 0.4Pa, and voltage 450V, the material of target are the NiCu alloy, working gas is an argon gas; The process conditions of the magnetron sputtering deposition plated film of Al metal level are: vacuum tightness 0.4Pa, and voltage 320V, the material of target are metal A l, working gas is an argon gas; The process conditions of the magnetron sputtering deposition plated film of Mo metal level are: vacuum tightness 0.4Pa, and voltage 550V, the material of target are metal M o, working gas is an argon gas.
Embodiment 4
A kind of electrode structure that is used for capacitive touch screen, described electrode structure comprise pet substrate, graphene layer, TiCu alloy-layer, Ag metal level and Ni metal level from the bottom to top successively;
Wherein, the thickness of TiCu alloy-layer is 240nm; The Ag metal layer thickness is 660nm; The Ni metal layer thickness is 100nm; Pet substrate thickness is 1.6mm; Graphene layer thickness is 2nm.
The preparation method:
The preparation method is identical with embodiment 1, and only the process conditions of the magnetron sputtering deposition plated film of the described TiCu alloy-layer of step (3) are: vacuum tightness 0.4Pa, and voltage 550V, the material of target are the TiCu alloy, working gas is an argon gas; The process conditions of the magnetron sputtering deposition plated film of Ag metal level are: vacuum tightness 0.43Pa, and voltage 340V, the material of target are metal A g, working gas is an argon gas; The process conditions of the magnetron sputtering deposition plated film of Ni metal level are: vacuum tightness 0.41Pa, and voltage 450V, the material of target are metal Ni, working gas is an argon gas.
Embodiment 5
A kind of electrode structure that is used for capacitive touch screen, described electrode structure comprise pet substrate, graphene layer, NiCu alloy-layer, Al metal level and Mo metal level from the bottom to top successively;
Wherein, metallic diaphragm thickness 800nm; The thickness of NiCu alloy-layer is 120nm; The Al metal layer thickness is 500nm; The Mo metal layer thickness is 180nm; Pet substrate thickness is 1.6mm; Graphene layer thickness is 2nm.
The preparation method:
(1) step (1) with embodiment 1 is identical;
(2) step (2) with embodiment 1 is identical;
(3b ') covers the photic zone of touch-screen with metal mask, obtains the only layer structure of the substrate/graphene film in exposed electrode district;
(3) on the layer structure of the substrate/graphene film in the only exposed electrode district that step (3b ') obtains, deposit NiCu alloy, metal A l and metal M o successively and obtain metallic diaphragm, obtain the touch screen that electrode district only has the layer structure of substrate/graphene film/NiCu alloy film/Al metal film/Mo metal film;
The process conditions of the magnetron sputtering deposition plated film of described NiCu alloy-layer are: vacuum tightness 0.5Pa, and voltage 430V, the material of target are the NiCu alloy, working gas is an argon gas; The process conditions of the magnetron sputtering deposition plated film of Al metal level are: vacuum tightness 0.48Pa, and voltage 380V, the material of target are metal A l, working gas is an argon gas; The process conditions of the magnetron sputtering deposition plated film of Mo metal level are: vacuum tightness 0.6Pa, and voltage 500V, the material of target are metal M o, working gas is an argon gas;
(4) obtain the electrode structure of capacitive touch screen through the laser ablation patterning.
Embodiment 6
A kind of electrode structure that is used for capacitive touch screen, described electrode structure comprise glass substrate, graphene layer, CrCu alloy-layer, Au metal level and Ti metal level from the bottom to top successively;
Wherein, the thickness of CrCu alloy-layer is 60nm; The Au metal layer thickness is 360nm; The Ti metal layer thickness is 35nm; Pet substrate thickness is 2mm; Graphene layer thickness is 1.4nm.
The preparation method:
The preparation method is identical with embodiment 5, and only the process conditions of the magnetron sputtering deposition plated film of the described CrCu alloy-layer of step (3) are: vacuum tightness 0.4Pa, and voltage 550V, the material of target are the CrCu alloy, working gas is an argon gas; The process conditions of the magnetron sputtering deposition plated film of Au metal level are: vacuum tightness 0.43Pa, and voltage 340V, the material of target are metal A u, working gas is an argon gas; The process conditions of the magnetron sputtering deposition plated film of Ti metal level are: vacuum tightness 0.41Pa, and voltage 450V, the material of target are metal Ti, working gas is an argon gas.
Embodiment 7
A kind of capacitive touch screen comprises substrate 100, attached to the transparent conductive graphene layer 201 on the substrate 100, and only in the electrode district successively attached to the NiCu alloy-layer 202 on the graphene layer 201, Al metal level 203 and Mo metal level 204; Fig. 4 is the structural representation of the described capacitive touch screen electrode district of present embodiment.
Comparative Examples
A kind of electrode structure that is used for capacitive touch screen, described electrode structure comprise glass substrate, graphene layer, Al metal level from the bottom to top successively;
The Al metal layer thickness is 400nm; Thickness of glass substrate is 2mm; Graphene layer thickness is 0.5nm.
Performance test:
Electric conductivity: four point probe side's resistance test.
After fitting, adhesion: FPC and the binding of metal lead wire electrode layer adopt tensile test machine test FPC stretching resistance performance, vertical 90 ° of directions, apply 0.5kg power, continue after 5 minutes, whether check test sample appearance and function keep intact, it is qualified to keep original outward appearance and holding circuit conducting to be, and outward appearance changes, tears etc. or circuit breaker is defective;
Corrosion resistance: adopt hot and humid case as testing apparatus, with sample after 60 ℃ of temperature, 95%RH are placed 240 hours, room temperature was placed 24 hours, check the outward appearance and the performance of module, the electrode rete keeps original outward appearance, pit or change color do not appear in the surface, and change in resistance does not exceed 20% of original numerical value simultaneously, and it is qualified to be; The electrode film laminar surface occur pit or change color or resistivity float change exceed original numerical value 20% for defective.
The The performance test results of table 1 embodiment 1-6 and Comparative Examples
As can be seen from Table 1; though the The performance test results of embodiment 1-6 as can be seen; the electrode structure of capacitive touch screen adopts the structure of substrate/graphene layer/metal adhesion layer/conducting metal rete/coat of metal; not only can make electrode structure acquisition and Graphene adhesion preferably; and corrosion resistance also shows well, can not influence the electric conductivity of electrode structure simultaneously.
Know-why of the present utility model has below been described in conjunction with specific embodiments.These are described just in order to explain principle of the present utility model, and can not be interpreted as the restriction to the utility model protection domain by any way.Based on explanation herein, those skilled in the art does not need to pay performing creative labour can associate other embodiment of the present utility model, and these modes all will fall within the protection domain of the present utility model.
Claims (9)
1. an electrode structure that is used for capacitive touch screen is characterized in that, described electrode structure comprises substrate, graphene layer and conducting metal rete from the bottom to top successively;
Wherein, be provided with the metal adhesion layer that increases graphene layer and metallic diaphragm adhesion between described conducting metal rete and the graphene layer.
2. electrode structure as claimed in claim 1 is characterized in that, is provided with the coat of metal that protection conducting metal rete is not oxidized and corrode on the conducting metal rete of described electrode structure.
3. electrode structure as claimed in claim 1 is characterized in that, the thickness of described metal adhesion layer is 30-350nm.
4. electrode structure as claimed in claim 2 is characterized in that, the thickness of described coat of metal is 30-350nm.
5. electrode structure as claimed in claim 1 is characterized in that, the thickness of described conducting metal rete is 140-700nm.
6. electrode structure as claimed in claim 2 is characterized in that, the gross thickness of described metal adhesion layer, conducting metal rete and coat of metal is 200-1000nm.
7. electrode structure as claimed in claim 1 is characterized in that, described graphene layer is the graphene layer of the monatomic or multilayer of 0.5-3nm.
8. as the described electrode structure of one of claim 1-7, it is characterized in that described electrode structure comprises the graphene layer of substrate, 0.5-3nm thickness, the metal adhesion layer of 30-350nm thickness, the conducting metal rete of 140-700nm thickness from the bottom to top successively;
Or described electrode structure comprises the graphene layer of substrate, 0.5-3nm thickness, the conducting metal rete of 140-700nm thickness and the coat of metal of 30-350nm thickness from the bottom to top successively;
Or described electrode structure comprises the graphene layer of substrate, 0.5-3nm thickness, the metal adhesion layer of 30-350nm thickness, the conducting metal rete of 140-700nm thickness and the coat of metal of 30-350nm thickness from the bottom to top successively.
9. as the described electrode structure of one of claim 1-7, it is characterized in that described electrode structure comprises the graphene layer of substrate, 0.5-3nm thickness, the NiCu alloy-layer of 30-350nm thickness, the Al metal level of 140-700nm thickness from the bottom to top successively;
Or described electrode structure comprises the graphene layer of substrate, 0.5-3nm thickness, the Al metal level of 140-700nm thickness and the Mo metal level of 30-350nm thickness from the bottom to top successively;
Or described electrode structure comprises the graphene layer of substrate, 0.5-3nm thickness, the NiCu alloy-layer of 30-350nm thickness, the Al metal level of 140-700nm thickness and the Mo metal level of 30-350nm thickness from the bottom to top successively.
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| CN 201220719851 CN203102214U (en) | 2012-12-24 | 2012-12-24 | Electrode structure for capacitive touch screens |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103019493A (en) * | 2012-12-24 | 2013-04-03 | 无锡力合光电石墨烯应用研发中心有限公司 | Electrode structure for capacitive touch screens and preparation method thereof |
| CN103760722A (en) * | 2014-01-10 | 2014-04-30 | 无锡格菲电子薄膜科技有限公司 | Smart switchable transparent film with transparent conductive electrodes of graphene and production method thereof |
| CN109791453A (en) * | 2017-08-09 | 2019-05-21 | 深圳市柔宇科技有限公司 | The preparation method of touch sensing and the preparation method of display screen component |
-
2012
- 2012-12-24 CN CN 201220719851 patent/CN203102214U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103019493A (en) * | 2012-12-24 | 2013-04-03 | 无锡力合光电石墨烯应用研发中心有限公司 | Electrode structure for capacitive touch screens and preparation method thereof |
| CN103760722A (en) * | 2014-01-10 | 2014-04-30 | 无锡格菲电子薄膜科技有限公司 | Smart switchable transparent film with transparent conductive electrodes of graphene and production method thereof |
| CN103760722B (en) * | 2014-01-10 | 2016-07-06 | 无锡格菲电子薄膜科技有限公司 | A kind of intelligent light modulation film using Graphene as transparency conductive electrode and preparation method thereof |
| CN109791453A (en) * | 2017-08-09 | 2019-05-21 | 深圳市柔宇科技有限公司 | The preparation method of touch sensing and the preparation method of display screen component |
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