CN203096231U - Sapphire growth furnace - Google Patents
Sapphire growth furnace Download PDFInfo
- Publication number
- CN203096231U CN203096231U CN 201320013462 CN201320013462U CN203096231U CN 203096231 U CN203096231 U CN 203096231U CN 201320013462 CN201320013462 CN 201320013462 CN 201320013462 U CN201320013462 U CN 201320013462U CN 203096231 U CN203096231 U CN 203096231U
- Authority
- CN
- China
- Prior art keywords
- sapphire growth
- growth furnace
- temperature measuring
- furnace body
- sapphire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Abstract
The utility model discloses a sapphire growth furnace. The sapphire growth furnace comprises a sapphire growth furnace body and a temperature measuring device, wherein a probe hole is formed in the center of the bottom of the sapphire growth furnace body, is made from a heat insulating material and is of a hollow cylindrical structure, one end of the probe hole is connected with a crucible, an inverted-cone-shaped connection port is formed at the connection between the end of the probe hole and the crucible, the other end of the probe hole is embedded in the bottom of the sapphire growth furnace body, a cooling device is arranged at the bottom of the sapphire growth furnace body, the temperature measuring device consists of a heat transferring portion and a temperature measuring portion, the heat transferring portion and the temperature measuring portion are in threaded connection, the heat transferring portion is placed in the probe hole and is in tight contact with the crucible, the temperature measuring portion is placed outside the bottom of the sapphire growth furnace body, and the outer side of the temperature measuring portion is connected with the cooling device. The sapphire growth furnace has the beneficial effects that the temperature measuring accuracy is high, the operation is stable, and meanwhile, the service life of the temperature measuring device is effectively prolonged.
Description
Technical field
The utility model relates to a kind of sapphire growth stove, belongs to artificial sapphire production technical field.
Background technology
Artificial sapphire aborning, temperature is up to 2000 ℃ in the sapphire growth stove, and temperature environment directly has influence on the sapphire final product quality, at present in the contact temp measuring method that the sapphire growth stove is adopted, because extreme temperatures in the stove, very big to the temperature measuring equipment structural damage, caused detected temperatures instability or detected temperatures deviation bigger simultaneously, have a strong impact on monitoring temperature in the stove, thereby cause the sapphire crystal quality,, the method that adopts untouchable measurement is also arranged at present in order one of to overcome problem, and receive that very easily the gaseous impurities that produces under the furnace high-temperature disturbs, have a strong impact on temperature measurement accuracy, this kind method of working together equipment cost height also is unfavorable for popularizing in an all-round way and uses, therefore press for a kind of low cost at present, the accuracy of temperature control height, stable sapphire growth stove.
Summary of the invention
The object of the invention just is to overcome above-mentioned deficiency, and a kind of sapphire growth stove is provided.
For achieving the above object, the present invention is achieved through the following technical solutions:
A kind of sapphire growth stove, comprise sapphire growth furnace body and temperature measuring equipment, described sapphire growth furnace body bottom centre establishes an exploration hole, described exploration hole is made of lagging material and is the hollow cylinder structure, one end is connected with crucible and the back taper Link Port is established in the junction, in the other end is embedded at the bottom of the sapphire growth furnace body, described sapphire growth furnace body bottom is provided with heat sink, described temperature measuring equipment is made of heat transfer part and thermometric portion and heat transfer part constitutes with thermometric portion and is threaded, described heat transfer part places in the exploration hole and in crucible and closely contacts, heat transfer part places the sapphire growth furnace bottom outside, and the thermometric portion outside is connected with heat sink.
The heat sink cooling method is cooling of air-cooled, condensing agent or semi-conductor cooling.
The beneficial effects of the utility model
1, directly gathers the crucible bottom core temperature, improved the accuracy that point for measuring temperature is selected, improve temperature measurement accuracy;
2, adopt independent thermometric space, effectively avoided the interior temperature of stove that the influence of temperature measuring equipment is improved thermometric tolerance range, and temperature measuring mechanism is played a very good protection, prolonged the work-ing life of temperature measuring mechanism;
3, the growth furnace outside adopts the forced cooling device that temperature measuring mechanism is cooled off, and has avoided temperature measuring equipment because of long-time high temperature causes aging or damage, has effectively prolonged the work-ing life of temperature measuring mechanism and has improved temperature measurement accuracy.
Description of drawings
Fig. 1 is this novel texture synoptic diagram.
Embodiment
As shown in Figure 1, a kind of sapphire growth stove, comprise sapphire growth furnace body 1 and temperature measuring equipment, described sapphire growth furnace body 1 bottom centre establishes an exploration hole 2, described exploration hole 2 is made of lagging material and is the hollow cylinder structure, one end is connected with crucible 3 and back taper Link Port 4 is established in the junction, the other end is embedded in the sapphire growth furnace body at 1 the end, described sapphire growth furnace body 1 bottom is provided with heat sink 5, described temperature measuring equipment is made of heat transfer part 6 and thermometric portion 7 and heat transfer part 6 is threaded with thermometric portion 7, described heat transfer part 6 places in the exploration hole 2 and in crucible 3 and contacts, thermometric portion 7 places sapphire growth furnace body 1 bottom outside, and thermometric portion 7 outsides are connected with heat sink 5.
Claims (2)
1. sapphire growth stove, comprise sapphire growth furnace body and temperature measuring equipment, it is characterized in that: described sapphire growth furnace body bottom centre establishes an exploration hole, described exploration hole is made of lagging material and is the hollow cylinder structure, one end is connected with crucible and the back taper Link Port is established in the junction, in the other end is embedded at the bottom of the sapphire growth furnace body, described sapphire growth furnace body bottom is provided with heat sink, described temperature measuring equipment is made of heat transfer part and thermometric portion and heat transfer part constitutes with thermometric portion and is threaded, described heat transfer part places in the exploration hole and in crucible and closely contacts, heat transfer part places the sapphire growth furnace bottom outside, and the thermometric portion outside is connected with heat sink.
2. a kind of sapphire growth stove according to claim 1 is characterized in that: described heat sink cooling method is cooling of air-cooled, condensing agent or semi-conductor cooling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320013462 CN203096231U (en) | 2013-01-11 | 2013-01-11 | Sapphire growth furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320013462 CN203096231U (en) | 2013-01-11 | 2013-01-11 | Sapphire growth furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203096231U true CN203096231U (en) | 2013-07-31 |
Family
ID=48847649
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320013462 Expired - Fee Related CN203096231U (en) | 2013-01-11 | 2013-01-11 | Sapphire growth furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203096231U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114737253A (en) * | 2022-06-10 | 2022-07-12 | 太原彩源新材料科技有限公司 | Single crystal furnace thermal field structure and method for growing large-size sapphire single crystal plate |
-
2013
- 2013-01-11 CN CN 201320013462 patent/CN203096231U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114737253A (en) * | 2022-06-10 | 2022-07-12 | 太原彩源新材料科技有限公司 | Single crystal furnace thermal field structure and method for growing large-size sapphire single crystal plate |
| CN114737253B (en) * | 2022-06-10 | 2022-11-04 | 太原彩源新材料科技有限公司 | Single crystal furnace thermal field structure and method for growing large-size sapphire single crystal plate |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130731 Termination date: 20150111 |
|
| EXPY | Termination of patent right or utility model |