CN203054416U - Liquid crystal lens - Google Patents
Liquid crystal lens Download PDFInfo
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- CN203054416U CN203054416U CN 201220678457 CN201220678457U CN203054416U CN 203054416 U CN203054416 U CN 203054416U CN 201220678457 CN201220678457 CN 201220678457 CN 201220678457 U CN201220678457 U CN 201220678457U CN 203054416 U CN203054416 U CN 203054416U
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Abstract
The utility model discloses a liquid crystal lens comprising a plurality of side-by-side lens units of identical structures. Each lens unit comprises a first glass substrate, a second glass substrate, a first alignment layer, a second alignment layer, liquid crystal material and frame sealing glue used for packaging the liquid crystal material, and the first alignment layer and the second alignment layer are used for liquid crystal molecular orientation. A first electrode is arranged on the first glass substrate and made of transparent conducting material, a second electrode is arranged on the second glass substrate, the second electrode is divided into a plurality of strip-shaped electrodes, and the plurality of strip-shaped electrodes are separated at certain intervals and arranged in parallel. The liquid crystal lens has the advantages that through changing space distribution of an electric field, the liquid crystal lens of the novel structure can achieve successional variation of the effective refractive index of the liquid crystal lens in space and improve light condensing character of the whole liquid crystal lens in a 3D displaying mode.
Description
Technical field
The utility model relates to free 3 D display technology, specifically is a kind of liquid crystal lens.
Background technology
Free 3 D display technology is compared spectacle 3D display technique, because in the constraint of objectively having broken away from equipment such as glasses, has improved and has watched comfort level and application and be subjected to extensive concern.Wherein based on the 3D display technique of disparity barrier because very serious in the brightness loss, need the backlight of super brightness just can watch comparatively desirable 3D effect, both increased the power consumption of whole display device, also shortened simultaneously the serviceable life of backlight, by contrast, based on the free 3 D display technology of liquid crystal lens in brightness almost without any loss, when between 2D and 3D, switching the brightness of backlight also without any need for adjustment, be a kind of more preferably free 3 D display technology.
Realize liquid crystal lens good optical characteristic, need accomplish that the liquid crystal molecule equivalent refractive index changes in space continuity each liquid crystal lens unit, and present periodic variation in whole effective viewing area.Because liquid crystal molecule by electric field driven, need be kept the periodicity continuous distribution of electric field in the space.As shown in Figure 1, be available liquid crystal lens technologies synoptic diagram.Liquid crystal lens unit of 1000 ' expression, the liquid crystal lens unit comprises first glass substrate 1001 ' and second glass substrate 1002 ', first electrode 1003 ' and second electrode 1004 ' lay respectively on first glass substrate 1001 ' and second glass substrate 1002 ', on first electrode 1003 ' and second electrode 1004 ', also be useful on the alignment film material of liquid crystal molecular orientation, be respectively 1005 ' and 1006 ', in addition, the liquid crystal lens unit also comprises liquid crystal material 1007 ' and is used for the envelope frame glue (not shown) of liquid crystal embedding.By figure one as can be seen, first electrode 1003 ' is hollowed out in liquid crystal lens unit central authorities, when liquid crystal two lateral electrodes are first electrode 1003 ' and second electrode, 1004 ' formation voltage difference, the electric field that is positioned at liquid crystal lens unit central authorities is the most weak, and the electric field of liquid crystal lens cell edges is the strongest, and central authorities are symmetrical distribution with lens.Cause liquid crystal molecule deflection in various degree because the power of electric field changes, form the continuous variation of equivalent refractive index, make whole liquid crystal lens unit present the good optical characteristic.
This technology shown in Figure 1 can realize the more weak overall distribution of the stronger and central electric field of fringe field, but the Electric Field Distribution continuity is relatively poor, influences the optically focused characteristic of liquid crystal lens.
Therefore, the technical issues that need to address are as follows at present:
The electric field space continuity distributes: realize in each lens unit, a little less than the Electric Field Distribution both sides persistent erection centre, present continuous space distribution; Distribute by changing electric field space, realize that the liquid crystal lens equivalent refractive index in the variation of space continuity, improves the optically focused characteristic of whole liquid crystal lens under the 3D display mode.
The utility model content
The technical problems to be solved in the utility model provides a kind of liquid crystal lens equivalent refractive index of realizing in the variation of space continuity, and then improves the liquid crystal lens of the optically focused characteristic of whole liquid crystal lens under the 3D display mode.
The utility model solves the problems of the technologies described above by the following technical solutions: a kind of liquid crystal lens, comprise a plurality of lens units side by side, the structure of each lens unit is identical, each lens unit comprises first glass substrate, second glass substrate, first alignment film that is used for liquid crystal molecular orientation, second alignment film, liquid crystal material and the envelope frame glue that encapsulates for liquid crystal material, first glass substrate is provided with first electrode that transparent conductive material is made, second glass substrate is provided with second electrode, second electrode is divided into several strip electrodes, and several strip electrodes separate at certain intervals each other and be arranged in parallel.
As the further improvement of such scheme, the width of layout of several strip electrodes is that the center line with strip electrode placed in the middle is that axis of symmetry is symmetrically distributed.
As the further improvement of such scheme, the electrode width on both sides is wideer than the electrode width of center in several strip electrodes.
As the further improvement of such scheme, the width of each strip electrode is identical.
As the further improvement of such scheme, second electrode is divided into first to the 5th totally five strip electrodes, and the width of five strip electrodes is respectively W1, W2, W3, W4, W5, W1=W5 〉=W2=W4 〉=W3.
Optimally, first to the 5th strip electrode electrically insulated from one another, first end of first, five strip electrodes at two ends directly is connected realization and electrically conducts with a signal wire, first end of second to the 4th middle strip electrode is connected with one first sweep trace by active device, form memory capacitance between second to the 4th strip electrode and the active device, first and second, second end of four, five strip electrodes is connected to one second sweep trace by active device.
More specifically, described active device comprises:
The transistorized grid of one the first film is connected on second sweep trace, and source electrode is connected second end of first electrode, and drain electrode is connected second end of second electrode;
The grid of one second thin film transistor (TFT) is connected on second sweep trace, and source electrode is connected second end of the 5th electrode, and drain electrode is connected second end of the 4th electrode;
Two the 3rd thin film transistor (TFT) parallel connections, the grid of two the 3rd thin film transistor (TFT)s all is connected on first sweep trace, drain electrode all is connected first end of the 3rd strip electrode, wherein the source electrode of the 3rd thin film transistor (TFT) connects first end of second strip electrode, the source electrode of another the 3rd thin film transistor (TFT) connects first end of the 4th strip electrode, forms memory capacitance between the gate metal of second to the 4th strip electrode and two the 3rd thin film transistor (TFT)s.
More specifically, described first strip electrode is connected with the upper end of the 5th strip electrode, second strip electrode is connected with the upper end of the 4th strip electrode, second strip electrode and the 4th strip electrode form memory capacitance at link position, the upper end of the 3rd strip electrode is connected to the drain electrode of the 3rd thin film transistor (TFT), the source electrode of the 3rd thin film transistor (TFT) is connected to the link position of second strip electrode and the 4th strip electrode, the grid of the 3rd thin film transistor (TFT) is connected to second sweep trace, form memory capacitance between the drain electrode of the 3rd strip electrode and the 3rd thin film transistor (TFT), the transistorized source electrode of the first film is connected to first strip electrode, the first film transistor drain is connected to the lower end of second strip electrode, the source electrode of second thin film transistor (TFT) is connected to the 4th strip electrode, drain electrode is connected to the lower end of the 5th strip electrode, first, the grid of two thin film transistor (TFT)s is connected to first sweep trace, and the lower end of first strip electrode and the 5th strip electrode directly is connected signal wire.
As the further improvement of such scheme, connect a signal source respectively in two strip electrodes upper ends of both sides, other strip electrodes all interconnect by thin film transistor (TFT) and charge.
Optimally, the number of thin film transistor (TFT) is that the number of strip electrode subtracts one, the source electrode of each thin film transistor (TFT) and drain electrode connect the lower end of two adjacent strip electrodes respectively, the grid of all thin film transistor (TFT)s all is connected to one first sweep trace, and the top of other strip electrodes except two strip electrodes of both sides forms memory capacitance.
Advantage of the present utility model is: the liquid crystal lens of this kind new construction, can distribute by changing electric field space, and realize that the liquid crystal lens equivalent refractive index in the variation of space continuity, improves the optically focused characteristic of whole liquid crystal lens under the 3D display mode.
Description of drawings
Figure 1 shows that available liquid crystal lens arrangement figure.
Fig. 2 is that the liquid crystal lens pillar is realized 3D displaying principle figure.
Fig. 3 is the 2D displaying principle figure under the effect of liquid crystal lens pillar.
Fig. 4 is liquid crystal lens cut-open view of the present utility model.
Fig. 5 is the part vertical view of second electrode among Fig. 4.
Fig. 6 is the surperficial vertical view of second glass substrate among Fig. 4.
Fig. 7 is the type of drive example.
Fig. 8 is the thin-film transistor structure sectional view.
Fig. 9 is capacitor C 234 section of structures among Fig. 6.
Figure 10 is the structural representation that increases memory capacitance C234.
Figure 11 is the vertical view of second glass substrate with liquid crystal lens of second kind of electrode structure of the utility model.
Figure 12 is the second electrode vertical view of lens unit 1000a among Figure 11.
Figure 13 is the liquid crystal lens design sketch with electrode structure of Figure 11.
Figure 14 is the vertical view of second glass substrate with liquid crystal lens of the third electrode structure of the utility model.
Embodiment
As shown in Figure 2, be that the liquid crystal lens pillar is realized 3D displaying principle figure, 1 expression 2D display device among Fig. 2, as LCD, PDP, OLED etc. place a liquid crystal lens pillar 2 before 2D display device 1, and 2D display device 1 is positioned on the focal plane of liquid crystal lens pillar 2, and the image pixel under each liquid crystal lens pillar 2 is split into several sub-pixels and is respectively applied to right and left eyes and show uses.Because liquid crystal lens pillar 2 can throw the sub-pixel of correspondence respectively to different directions, so people's right and left eyes can watch different images respectively, thereby produces 3D effect.And when not when liquid crystal lens pillar 2 applies voltage, liquid crystal lens pillar 2 no longer possesses the optically focused characteristic, and the right and left eyes image is no longer distinguished in whole liquid crystal lens pillar Unit 2, be that same image is observed by right and left eyes simultaneously, no longer distinguish right and left eyes information, still present the 2D picture, as shown in Figure 3.
Specific implementation as shown in Figure 4, the 1000th, liquid crystal lens, liquid crystal lens 1000 comprise a plurality of lens units side by side, represent two lens units the most basic as wherein 1000a and 1000b, two unit that only draw among Fig. 4, the structure of each unit is identical.Be example with 1000a, liquid crystal lens 1000 comprises first glass substrate 1001, second glass substrate 1002, first electrode 1003 is on first glass substrate 1001, first electrode 1003 is whole transparent conductive material, second electrode 1004 is on second glass substrate 1002, second electrode 1004 is divided into several strip electrodes, a1 among the figure, a2, a3, a4, a5 represents, strip electrode a1, a2, a3, a4, the width of a5 is respectively W1, W2, W3, W4, W5, W1=W5 〉=W2=W4 〉=W3, electrode width can be symmetrically distributed with the center line of the strip electrode a3 of centre, and namely the electrode on both sides is wideer, the electrode of center narrower (as shown in Figure 5), width that also can all electrodes is set to identical, but the quantity of bar shaped is not limited to 5, and odd number preferably generally speaking is as 7,9 etc.First electrode 1003 and second electrode 1004 are generally transparent conductive material such as tin indium oxide.
With reference to Fig. 4, in addition, liquid crystal lens also comprises first alignment film 1005, second alignment film 1006, the liquid crystal material 1007 for liquid crystal molecular orientation and is used for the envelope frame glue (figure does not draw) of liquid crystal material encapsulation.The material of liquid crystal material 1007 for having positive dielectric anisotropy, i.e. △ ε=ε
∥-ε
⊥0, ε in the formula
∥Be the dielectric coefficient of long axis of liquid crystal molecule direction, ε
⊥Dielectric coefficient for the liquid crystal molecule short-axis direction.
First kind of electrode and circuit setting
A kind of electrode and circuit that Fig. 6 is illustrated in second glass substrate, 1002 surfaces arrange situation.Wherein, s1 represents signal wire, and g1, g2 represent first and second sweep trace, and T12, T45, T234 represent active device, and as thin film transistor (TFT) TFT, C234 is memory capacitance.With first to the 5th strip electrode a1, a2, a3, a4, the basic lens unit that a5 forms is example, first to the 5th strip electrode a1, a2, a3, a4, a5 is independent each other not to be connected, first of two ends, five strip electrode a1, first end of a5 directly is connected with signal wire s1 to be realized electrically conducting, second to the 4th middle strip electrode a2, a3, first end of a4 is connected with the first sweep trace g1 by active device, second to the 4th strip electrode a2, a3, form memory capacitance between a4 and the active device, first, two, four, five strip electrode a1, a2, a4, second end of a5 is connected to the second sweep trace g2 by active device.
As active device T12, when T45, T234 are thin film transistor (TFT), for thin film transistor (TFT) T12, the grid of thin film transistor (TFT) T12 (Gate) G is connected on the second sweep trace g2, the source electrode of thin film transistor (TFT) T12 (Source) S is connected second end of the first electrode a1, and the drain electrode of thin film transistor (TFT) T12 (Drain) D is connected second end of the second electrode a2.If apply a high voltage at signal wire s1, then the source S of corresponding thin film transistor (TFT) T12 is high voltage, then can open thin film transistor (TFT) T12 if apply another high voltage (greater than the threshold voltage of TFT) at the second sweep trace g2 this moment, realizing the conducting of thin film transistor (TFT) T12 source S and drain D, is that signal source is charged to the second electrode a2 by thin film transistor (TFT) T12 with the first electrode a1; For thin film transistor (TFT) T45, the grid of thin film transistor (TFT) T45 (Gate) G is connected on the second sweep trace g2, the source electrode of thin film transistor (TFT) T45 (Source) S is connected second end of the 5th electrode a5, and the drain electrode of thin film transistor (TFT) T45 (Drain) D is connected second end of the 4th electrode a4.If apply a high voltage at signal wire s1, then the source S of corresponding thin film transistor (TFT) T45 is high voltage, then can open thin film transistor (TFT) T45 if apply another high voltage (greater than the threshold voltage of TFT) at the second sweep trace g2 this moment, realizing the conducting of thin film transistor (TFT) T45 source S and drain D, is that signal source is charged to the 4th electrode a4 by thin film transistor (TFT) T45 with the 5th electrode a5;
For thin film transistor (TFT) T234, it is the parallel connection of two TFT structures among Fig. 6, the grid G of two thin film transistor (TFT) T234 all is connected on the first sweep trace g1, the drain D of two thin film transistor (TFT) T234 all is connected first end of the 3rd strip electrode a3, wherein the source S of a thin film transistor (TFT) T234 connects first end of the second strip electrode a2, and the source S of another thin film transistor (TFT) T234 connects first end of the 4th strip electrode a4; When thin film transistor (TFT) T12 and T45 open and to second, four strip electrode a2, a4 charging after, the second, four strip electrode a2, a4 are high voltage, apply a high voltage (greater than the threshold voltage of TFT) at the first sweep trace g1 this moment, open thin film transistor (TFT) T234, then can realize conducting between the source S of thin film transistor (TFT) T234 and the drain D, the 3rd strip electrode a3 be charged by thin film transistor (TFT) T234 by the current potential of second, four strip electrode a2, a4.
Based on above principle, when needs utilize liquid crystal lens to realize that 3D shows, can on signal wire s1, apply a constant voltage all the time, so that first, five strip electrodes such as the required voltage of a1, a5 are provided; Give high voltage at the second sweep trace g2, second, four strip electrode a2, a4 are charged; Be charged to the current potential of needs as second, four strip electrode a2, a4 after, switch to electronegative potential on the second sweep trace g2 and close TFT, as T12, T45; When the second sweep trace g2 opens, give high voltage at the first sweep trace g1, the 3rd strip electrode a3 is charged; Be charged to the current potential of needs as the 3rd strip electrode a3 after, the first sweep trace g1 switches to electronegative potential and closes TFT, as T234.Following one-period will be opened first and second sweep trace g1, g2 more simultaneously, close the first sweep trace g1 then, close the second sweep trace g2 again.Type of drive such as Fig. 7, as seen from Figure 7, the second sweep trace g2 is in time of noble potential in each cycle longer, the first sweep trace g1 is in the time of noble potential in each cycle shorter, because first and second sweep trace g1, g2 open simultaneously, that is to say, the first sweep trace g1 opens and switch to electronegative potential earlier after the 3rd strip electrode a3 is charged to selection of appointed in phase weekly, is only the second scanning g2 then second, four strip electrode a2, a4 are switched to electronegative potential after being charged to selection of appointed.
Fig. 8 is the cross-sectional view of thin film transistor (TFT) T12, T45 and T234.Thin film transistor (TFT) of 100 expressions among the figure, 1002 expressions, second glass substrate, the grid (Gate) of 101 expression TFT; be generally metal A l or alloy material, 102 expression TFT gate insulators are generally silicon nitride; 103 expression active layers; as amorphous silicon, 104,105 represent source electrode (Source) and the drain electrode (Drain) of TFT respectively; 104 and 105 is with a kind of metal material; be generally metal A l or alloy etc., 106 is protective seam, as silicon nitride etc.Electrode 107 and 108 is transparent conductive material such as ITO, because protective seam 106 is provided with opening in 109 and 110 positions, therefore, electrode 107 electrically conducts by opening 110 and source electrode 104, and electrode 108 electrically conducts by opening 109 and drain electrode 105.
In conjunction with Fig. 6 as can be known, for thin film transistor (TFT) T12, electrode 107 is the first strip electrode a1, and electrode 108 is the second strip electrode a2, and grid 101 is connected on the second sweep trace g2; For thin film transistor (TFT) T45, electrode 107 is the 5th strip electrode a5, and electrode 108 is the 4th strip electrode a4, and grid 101 is connected on the second sweep trace g2; Wherein for any TFT, electrode 107 is the second strip electrode a2 or the 4th strip electrode a4 for thin film transistor (TFT) T234, and electrode 108 is the 3rd bar shaped electricity a3, and grid 101 is connected on the first sweep trace g1.
Continuation is with reference to Fig. 6, because by thin film transistor (TFT) such as T12, after T45 was charged to the current potential of appointment to second, four strip electrode a2, a4, in T12 and T45 down periods, the current potential that need keep second, four strip electrode a2, a4 was constant.To after the 3rd strip electrode a3 charging, the current potential that also needs to keep the 3rd strip electrode a3 in the T234 down periods is constant, therefore need be by the effect of memory capacitance C234 by thin film transistor (TFT) T234.
Fig. 9 represents memory capacitance C234 cross-sectional view.1002 expressions, second glass substrate among the figure, grid (Gate) metal of 101 expression TFT, 102 expression TFT gate insulators, thickness is made as dg, and 106 is protective seam, and thickness is made as dp.So, second and third, the memory capacitance that forms of four strip electrode a2, a3, a4 and gate metal 101 can be expressed as C=ε
0ε
rS/ (dp+dg), wherein ε
0Be the vacuum dielectric coefficient, ε
rBe the relative dielectric coefficient of insulation course, S is second and third, four strip electrode a2, a3, a4 and gate metal 101 over against area.Be to increase memory capacitance, both can increase over against area S or reduce dp+dg.Can influence light penetration owing to increase over against area S, so can manage to reduce dp+dg.
Figure 10 is for increasing the another kind design of memory capacitance C234.Same Fig. 9,1002 expressions, second glass substrate among the figure, grid (Gate) metal of 101 expression TFT, 102 expression TFT gate insulators, thickness is made as dg, 104/105 expression source electrode or drain metal material, 106 is protective seam, thickness is made as dp.Protective seam 106 is provided with opening H1, H2, H3, by opening H1, H2, H3 realize second and third, four strip electrode a2, a3, a4 electrically conduct with 104/105 source electrode or drain metal respectively.So, second and third, the memory capacitance that forms of four strip electrode a2, a3, a4 and gate metal 101 can be expressed as C=ε
0ε
rS/dg, wherein ε
0Be the vacuum dielectric coefficient, ε
rBe the relative dielectric coefficient of insulation course, S for second and third, the metal 104/105 that electrically conducts of four strip electrode a2, a3, a4 and gate metal 101 over against area, can increase memory capacitance thus.
Second kind of electrode and circuit setting
Figure 11 is that the another kind of electrode of this patent and circuit arrange design.First glass substrate 1001 and first electrode 1003 are constant, and with reference to Figure 11 and Figure 12, Figure 11 represents second glass substrate, 1003 lip-deep electrodes and circuit distribution situation, and s1 represents signal wire, and g1, g2 represent sweep trace.Different with first kind of electrode of this patent and circuit setting (Fig. 6) is, the first strip electrode a1 is connected with the upper end of the 5th strip electrode a5, and the second strip electrode a2 is connected with the upper end of the 4th strip electrode a4.The second strip electrode a2 and the 4th strip electrode a4 form memory capacitance C24 at link position, the upper end of the 3rd strip electrode a3 is connected to the drain D of thin film transistor (TFT) T234, the source S of thin film transistor (TFT) T234 is connected to the link position of the second strip electrode a2 and the 4th strip electrode a4, the second strip electrode a2 and the 4th strip electrode a4 charge by active device such as the third electrode a3 of thin film transistor (TFT) T234 jointly, the grid G of thin film transistor (TFT) T234 is connected to the second sweep trace g2, form memory capacitance C3 between the drain D of the 3rd strip electrode a3 and thin film transistor (TFT) T234, the source S of thin film transistor (TFT) T12 is connected to the first strip electrode a1, drain D is connected to the lower end of the second strip electrode a2, the source S of thin film transistor (TFT) T45 is connected to the 4th strip electrode a4, drain D is connected to the lower end of the 5th strip electrode a5, thin film transistor (TFT) T12, the grid G of T45 is connected to the first sweep trace g1, and the lower end of the first strip electrode a1 and the 5th strip electrode a5 directly is connected signal wire s1.
The lower end of the first strip electrode a1 and the 5th strip electrode a5 directly is connected on the signal wire s1, and a higher voltage can be provided.The second, four strip electrode a2, a4 are that source electrode charges by thin film transistor (TFT) T12, T45 with first, five strip electrode a1, a5 respectively, suppose that the TFT duration of charging is t, then ∫ i
dDt=C △ V, wherein i
dExpression source drain electric current, C represents memory capacitance and liquid crystal capacitance sum, △ V represents the strip electrode voltage difference.Work as V
Gs-V
DsV
ThThe time, I
d=C
Oxμ W/L[(V
Gs-V
Th) V
Ds-1/2V
Ds 2], according to the charging ability difference of TFT, the voltage of second, four strip electrode a2, a4 can be all the time less than the voltage of first, five strip electrode a1, a5, i.e. a2=a4＜a1=a5; Equally, the 3rd strip electrode a3 is that source electrode charges by thin film transistor (TFT) T234 with second, four strip electrode a2, a4, and the control duration of charging can make the voltage of the 3rd strip electrode a3 all the time less than second, four strip electrode a2, a4, i.e. a3＜a2=a4; Be symmetrically distributed so voltage presents the center at strip electrode, the a1=a5 maximum, a2=a4 secondly, the a3 minimum.Because voltage symmetry distributes, make the liquid crystal material refractive index present symmetrical distribution, the contre electrode position has more weak electric field intensity, the edge electrodes position has stronger electric field intensity, liquid crystal material presents the gradual change of refractive index along with the variation of electric field intensity, thereby possess the good optical imaging characteristic, as shown in figure 13.
The third electrode and circuit setting
Figure 14 is the third form of this patent: 1002 is vertical views of second glass substrate among Figure 14.For realizing the better optical characteristics of liquid crystal lens, the electrode of same lens unit can be made the very little strip electrode of many width, among the figure lens unit electrode 1000a with first to the 8th a1, a2 ..., a7, a8 strip electrode form, but do not limit the number of strip electrode, can be more, electrode width can equate or not wait, among Figure 14 C27 represent except two strip electrodes of both sides other strip electrodes a2, a3 ..., the memory capacitance that forms of a6, a7.Two strip electrode a1 in both sides are connected signal source s1 respectively with the a8 upper end, other strip electrodes all interconnect by thin film transistor (TFT) and charge, be specially, the number of thin film transistor (TFT) is that the number of strip electrode subtracts one, the source S of each thin film transistor (TFT) and drain D connect the lower end of two adjacent strip electrodes respectively, and the grid G of all thin film transistor (TFT)s all is connected to the first sweep trace g1.Drive simpler easy realization.The a1, the a8 current potential that directly are connected with signal source s1 are the highest, and be more low the closer to the electrode potential at lens unit center, forms good current potential center and be symmetrically distributed, and liquid crystal lens possesses desirable refractive index continuous gradation characteristic.
The preferred embodiment that the above is only created for the utility model; do not create in order to limit the utility model; all any modifications of within spirit that the utility model is created and principle, doing, be equal to and replace and improvement etc., all should be included within the protection domain that the utility model creates.
Claims (10)
1. liquid crystal lens, comprise a plurality of lens units side by side, the structure of each lens unit is identical, each lens unit comprises first glass substrate, second glass substrate, first alignment film that is used for liquid crystal molecular orientation, second alignment film, liquid crystal material and the envelope frame glue that encapsulates for liquid crystal material, first glass substrate is provided with first electrode that transparent conductive material is made, second glass substrate is provided with second electrode, it is characterized in that: second electrode is divided into several strip electrodes, and several strip electrodes separate at certain intervals each other and be arranged in parallel.
2. liquid crystal lens as claimed in claim 1 is characterized in that: the width of layout of several strip electrodes is that the center line with strip electrode placed in the middle is that axis of symmetry is symmetrically distributed.
3. liquid crystal lens as claimed in claim 2, it is characterized in that: the electrode width on both sides is wideer than the electrode width of center in several strip electrodes.
4. liquid crystal lens as claimed in claim 2, it is characterized in that: the width of each strip electrode is identical.
5. liquid crystal lens as claimed in claim 1 is characterized in that: second electrode is divided into first to the 5th totally five strip electrodes, and the width of five strip electrodes is respectively W1, W2, W3, W4, W5, W1=W5 〉=W2=W4 〉=W3.
6. liquid crystal lens as claimed in claim 5, it is characterized in that: first to the 5th strip electrode electrically insulated from one another, first end of first, five strip electrodes at two ends directly is connected realization and electrically conducts with a signal wire, first end of second to the 4th middle strip electrode is connected with one first sweep trace by active device, form memory capacitance between second to the 4th strip electrode and the active device, first and second, second end of four, five strip electrodes is connected to one second sweep trace by active device.
7. liquid crystal lens as claimed in claim 6, it is characterized in that: described active device comprises:
The transistorized grid of one the first film is connected on second sweep trace, and source electrode is connected second end of first electrode, and drain electrode is connected second end of second electrode;
The grid of one second thin film transistor (TFT) is connected on second sweep trace, and source electrode is connected second end of the 5th electrode, and drain electrode is connected second end of the 4th electrode;
Two the 3rd thin film transistor (TFT) parallel connections, the grid of two the 3rd thin film transistor (TFT)s all is connected on first sweep trace, drain electrode all is connected first end of the 3rd strip electrode, wherein the source electrode of the 3rd thin film transistor (TFT) connects first end of second strip electrode, the source electrode of another the 3rd thin film transistor (TFT) connects first end of the 4th strip electrode, forms memory capacitance between the gate metal of second to the 4th strip electrode and two the 3rd thin film transistor (TFT)s.
8. liquid crystal lens as claimed in claim 7, it is characterized in that: described first strip electrode is connected with the upper end of the 5th strip electrode, second strip electrode is connected with the upper end of the 4th strip electrode, second strip electrode and the 4th strip electrode form memory capacitance at link position, the upper end of the 3rd strip electrode is connected to the drain electrode of the 3rd thin film transistor (TFT), the source electrode of the 3rd thin film transistor (TFT) is connected to the link position of second strip electrode and the 4th strip electrode, the grid of the 3rd thin film transistor (TFT) is connected to second sweep trace, form memory capacitance between the drain electrode of the 3rd strip electrode and the 3rd thin film transistor (TFT), the transistorized source electrode of the first film is connected to first strip electrode, the first film transistor drain is connected to the lower end of second strip electrode, the source electrode of second thin film transistor (TFT) is connected to the 4th strip electrode, drain electrode is connected to the lower end of the 5th strip electrode, first, the grid of two thin film transistor (TFT)s is connected to first sweep trace, and the lower end of first strip electrode and the 5th strip electrode directly is connected signal wire.
9. liquid crystal lens as claimed in claim 1 is characterized in that: two strip electrodes upper ends in both sides connect a signal source respectively, and other strip electrodes all interconnect by thin film transistor (TFT) and charge.
10. liquid crystal lens as claimed in claim 9, it is characterized in that: the number of thin film transistor (TFT) is that the number of strip electrode subtracts one, the source electrode of each thin film transistor (TFT) and drain electrode connect the lower end of two adjacent strip electrodes respectively, the grid of all thin film transistor (TFT)s all is connected to one first sweep trace, and the top of other strip electrodes except two strip electrodes of both sides forms memory capacitance.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220678457 CN203054416U (en) | 2012-12-11 | 2012-12-11 | Liquid crystal lens |
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|---|---|---|---|
| CN 201220678457 CN203054416U (en) | 2012-12-11 | 2012-12-11 | Liquid crystal lens |
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| CN203054416U true CN203054416U (en) | 2013-07-10 |
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| CN (1) | CN203054416U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015089983A1 (en) * | 2013-12-19 | 2015-06-25 | 京东方科技集团股份有限公司 | Liquid crystal grating, display device, and drive method |
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2012
- 2012-12-11 CN CN 201220678457 patent/CN203054416U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015089983A1 (en) * | 2013-12-19 | 2015-06-25 | 京东方科技集团股份有限公司 | Liquid crystal grating, display device, and drive method |
| US9804404B2 (en) | 2013-12-19 | 2017-10-31 | Boe Technology Group Co., Ltd. | Liquid crystal grating, display device and driving method |
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