CN203031439U - Semiconductor wafer polishing system - Google Patents
Semiconductor wafer polishing system Download PDFInfo
- Publication number
- CN203031439U CN203031439U CN 201220564271 CN201220564271U CN203031439U CN 203031439 U CN203031439 U CN 203031439U CN 201220564271 CN201220564271 CN 201220564271 CN 201220564271 U CN201220564271 U CN 201220564271U CN 203031439 U CN203031439 U CN 203031439U
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- polishing
- semiconductor wafer
- cleaning agent
- cleaning
- agent supply
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- Cleaning Or Drying Semiconductors (AREA)
Abstract
The utility model provides a semiconductor wafer cleaning device and a polishing system thereof. The polishing system comprises a polishing table capable of being moved up and down, a polishing cushion, a polishing head capable of being moved upward, downward, leftward and rightward, a polishing agent supply component and the semiconductor wafer cleaning device, wherein the polishing cushion is tightly attached to the upper surface of the polishing table; the polishing head is arranged above the polishing cushion and used for keeping polishing targets; the polishing agent supply component is arranged above the polishing cushion and located on one side of the polishing head; the semiconductor wafer cleaning device is arranged on one side of the polishing table and used for cleaning the polishing targets; the semiconductor wafer cleaning device comprises a cleaning tank, and a cleaning agent jet component is arranged in the cleaning tank; and the semiconductor wafer cleaning device further comprises a cleaning agent supply component, and the cleaning agent supply component is communicated with the cleaning agent jet component. According to the semiconductor wafer cleaning device and the polishing system, automatic cleaning of each polishing target after polishing is achieved, the polishing targets are prevented from being contacted with air after the polishing and before cleaning, and chemical residues on surfaces of the polishing targets are thoroughly cleared away.
Description
Technical field
The utility model belongs to semiconductor wafer polishing cleaning technique field, relates to a kind of chemical-mechanical polishing head, particularly relates to a kind of apparatus for cleansing semiconductor wafer and polishing system thereof.
Background technology
In the production of semiconductor wafer, more and more harsher to machining accuracy and the surface quality requirement of semiconductor wafer.After semiconductor wafer is through polishing, its surface can retain the particulates such as particle that abrasive dust and emery wheel come off, only the method that dries up by deionized water rinsing and dry air can't all be removed, this will rerun a movie in follow-up polishing process in the formation of particulate place, badly influences wafer surface quality.In the grinding wafer process, the porous ceramics sucker utilizes the vacuum suction wafer, and its upper surface is as the wafer orientation face, and surface configuration directly has influence on the shape behind the grinding wafer.If there is particle in the porous ceramics chuck surface, under the sucker suction function, the wafer at particle place meeting warpage or cracked has a strong impact on the wafer surface grinding quality.If particle stops up the micropore on the porous ceramics sucker, can cause the porous ceramics sucker to lose the vacuum suction effect.Therefore, in the wafer grinding machine, can take manually to clean or automatic cleaning mode removing wafer surface particulate, removing porous ceramics chuck surface particle and polishing chuck surface, to guarantee porous ceramics sucker face type and air permeability and good, improve the wafer surface grinding quality.
Existing a kind of automatic flushing device is shown in Fig. 1 a to 1c, this cleaning device comprises casing, wafer brush 11, sucker brush 12, oilstone dish 13, casing comprises upper box 14 and lower box 15, and wafer brush 11, sucker brush 12, oilstone dish 13 are installed on the lower box by support 111,121,131 separately respectively; This device also comprises band guide rod cylinder, calibration drive system 16 and rotary drive system 17, the band guide rod cylinder is fixed on the grinding machine by carriage, connect by calibration drive system 16 between upper box 14 and the lower box 15, the piston rod of cylinder is connected with upper box, and calibration drive system 16 electricly connects with rotary drive system 17 and band guide rod cylinder.
Shown in Fig. 1 a and Fig. 1 b, calibration drive system 16 comprises micromachine 161, decelerator 162, gear train assembly and signal transduction system, gear train assembly comprises the complete gear 163 of driven benefit and active partial gear 164, driven partial gear 163 is sleeved in the rotating shaft 165 in the centre bearing hole of lower box 15, initiatively partial gear 164 is connected by shaft coupling 166 with the output of decelerator 162, this moment is partial gear 164 and driven partial gear 163 engagements initiatively, decelerator 162 inputs are connected with micromachine 161, signal transduction system comprises metal derby 167 and near switch 168, metal derby 167 is fixed on the active partial gear 164, is installed on the upper box 14 near switch 168.
Shown in Fig. 1 a and 1c, rotary drive system 17 comprises micromachine 171, decelerator 172, gear train assembly and signal transduction system, gear train assembly comprise driving gear 173 and respectively three driven gears 174,175,176, three driven gears corresponding with wafer brush 11, sucker brush 12 and oilstone dish 13 be installed in respectively in the dead eye of the lower box corresponding with it 15.The mounting bracket of wafer brush 11, sucker brush 12 and oilstone dish 13 is set with in the gear shaft of three driven gears, three driven gears 174 when working position all can with driving gear 173 engagements, driving gear 173 is sleeved in the rotating shaft in the dead eye of lower box 15.Signal transduction system comprises metal derby 177 respectively and near switch 178, totally 3 of metal derbies are separately fixed on three driven gears, are installed on the upper box 14 near switch 178.Though this automatic flushing device compact conformation, motion control is simple, can effectively improve machining accuracy and the surface quality of semiconductor wafer, but its complex structure, and be to control by mechanical mechanism, on precision, also differ greatly with Electronic Control, can't satisfy the semiconductor wafer accuracy requirement of harshness day by day.
For addressing the above problem, those skilled in the art propose a kind of chemical-mechanical polishing (CMP) equipment, and as shown in Figure 2, this CMP equipment comprises polishing block 20, polishing pad 21, rubbing head 22, polishing agent supply part 23; Polishing pad 21 is close on the described polishing block 20, and rubbing head 22 is located at polishing pad 21 tops, and polishing agent supply part 23 is arranged at the top of polishing pad 21, and is positioned at a side of rubbing head 22.Polishing target (as semiconductor wafer) 24 keeps by rubbing head 22, therefore can drive 24 swings of polishing target when rubbing head rotates, and polishing target 24 is pressed to polishing pad 21 with the polished head of certain pressure.Meanwhile, polishing block 20 also rotates with polishing pad 21, so polishing pad 21 and the 24 formation relative motions of polishing target, and in this state, polishing agent supply part 23 is applied to polishing agent 25 on the surface of polishing pad 21.Polishing agent 25 is along the diffusion into the surface of polishing pad 21, and enters the zone of 24 of polishing pad 21 and polishing targets when polishing pad 21 and 24 relative motions of polishing target, and therefore polished polishing target 24 is surperficial polished.Specifically, to be that the chemical reaction of relative motion by 24 of polishing block 20, polishing pad 21 and polishing targets and polishing agent 25 is collaborative finish polishing to this CMP equipment.This CMP equipment has advantage simple in structure, easy to operate with respect to automatic flushing device.
As everyone knows, be arranged in the wafer on the copper cash owing to be in air for a long time, its surface can produce chemical reaction and cause corrosion or chemicals residual, and wafer herein often goes out of use.In addition, residing polishing pad position difference during wafer polishing, the polishing time difference also can cause in various degree flaw to wafer.
The utility model content
The shortcoming of prior art in view of the above, the purpose of this utility model is to provide a kind of apparatus for cleansing semiconductor wafer and polishing system thereof, cleans the untimely surface that thoroughly causes for solution prior art semiconductor wafer after polishing and exists residue to influence the problem of wafer quality.
Reach other relevant purposes for achieving the above object, the utility model provides a kind of apparatus for cleansing semiconductor wafer and rubbing head thereof.
A kind of apparatus for cleansing semiconductor wafer, described apparatus for cleansing semiconductor wafer comprises rinse bath, is provided with the cleaning agent injecting-unit in the described rinse bath; Described apparatus for cleansing semiconductor wafer also comprises the cleaning agent supply part, and described cleaning agent supply part communicates with described cleaning agent injecting-unit.
Preferably, described cleaning agent injecting-unit comprises at least 1 nozzle.
Preferably, described nozzle is located at the interior side of rinse bath or/and the bottom surface.
Preferably, described cleaning agent is deionized water.
A kind of semiconductor wafer polishing system, described semiconductor wafer polishing system comprises: the polishing block that can move up and down, polishing pad, the rubbing head that can move up and down, polishing agent supply part, apparatus for cleansing semiconductor wafer; Described polishing pad is close to described polishing block upper surface; Described rubbing head is located at described polishing pad top, in order to keep the polishing target; Described polishing agent supply part is located at the top of described polishing pad and is positioned at a side of rubbing head; Described apparatus for cleansing semiconductor wafer is located at a side of described polishing block, is used for the cleaning polishing target; Described apparatus for cleansing semiconductor wafer comprises rinse bath, is provided with the cleaning agent injecting-unit in the described rinse bath; Described apparatus for cleansing semiconductor wafer also comprises the cleaning agent supply part, and described cleaning agent supply part communicates with described cleaning agent injecting-unit.
Preferably, described cleaning agent injecting-unit comprises at least 1 nozzle.
Preferably, described nozzle is located at the interior side of rinse bath or/and the bottom surface.
Preferably, described cleaning agent is deionized water.
Preferably, described polishing block moves up and down in rotary manner; Described rubbing head moves up and down with respect to described polishing block in rotary manner.
Preferably, described rubbing head move left and right is travelled to and fro between between polishing block and the rinse bath.
As mentioned above, apparatus for cleansing semiconductor wafer described in the utility model and polishing system thereof have following beneficial effect:
The utility model has been realized each polishing target automatic cleaning after polishing, has avoided the polishing target to contact with air after polishing with before cleaning; In addition, adopt multi-faceted nozzle ejection deionized water that the polishing target is cleaned, can thoroughly remove the chemical residual of polishing target surface.
Description of drawings
Fig. 1 a to Fig. 1 c is shown as the structural representation of existing automatic flushing device.
Fig. 2 is shown as the structural representation of existing chemical-mechanical polishing (CMP) equipment.
Fig. 3 is shown as the structural representation of embodiment one described apparatus for cleansing semiconductor wafer.
Fig. 4 is shown as a kind of structural representation of the cleaning agent injecting-unit in the embodiment one described apparatus for cleansing semiconductor wafer.
Fig. 5 is shown as the structural representation of embodiment two described semiconductor wafer polishing systems.
Fig. 6 is shown as a kind of structural representation of the cleaning agent injecting-unit in the embodiment one described semiconductor wafer polishing system.
The element numbers explanation
11 wafers brush;
12 suckers brush;
13 oilstone dishes;
14 upper boxes;
15 lower boxes;
16 calibration drive systems;
17 rotary drive systems;
111 supports;
121 supports;
131 supports;
161 micromachines;
162 decelerators;
The complete gear of 163 driven benefits;
164 initiatively mend complete gear;
165 rotating shafts;
166 shaft couplings;
167 metal derbies;
168 near switch;
171 micromachines;
172 decelerators;
173 driving gears;
174 driven gears;
175 driven gears;
176 driven gears;
177 metal derbies;
178 near switch;
20 polishing blocks;
21 polishing pads;
22 rubbing heads;
23 polishing agent supply parts;
24 polishing targets;
25 polishing agents;
30 apparatus for cleansing semiconductor wafer;
31 rinse baths;
32 cleaning agent injecting-units;
33 cleaning agent supply parts;
34 cleaning agents;
321 nozzles;
50 semiconductor wafer polishing systems;
51 polishing blocks;
52 polishing pads;
53 rubbing heads;
54 polishing agent supply parts;
55 apparatus for cleansing semiconductor wafer;
56 polishing targets;
57 polishing agents;
551 rinse baths;
552 cleaning agent injecting-units;
553 cleaning agent supply parts;
554 cleaning agents;
5521 nozzles.
The specific embodiment
Below by particular specific embodiment embodiment of the present utility model is described, person skilled in the art scholar can understand other advantages of the present utility model and effect easily by the disclosed content of this specification.
See also accompanying drawing.Notice, the appended graphic structure that illustrates of this specification, ratio, size etc., equal contents in order to cooperate specification to disclose only, understand and reading for person skilled in the art scholar, be not in order to limit the enforceable qualifications of the utility model, so technical essential meaning of tool not, the adjustment of the modification of any structure, the change of proportionate relationship or size, do not influencing under the effect that the utility model can produce and the purpose that can reach, all should still drop on the technology contents that the utility model discloses and get in the scope that can contain.Simultaneously, quote in this specification as " on ", D score, " left side ", " right side ", " centre " reach the term of " " etc., also only for ease of understanding of narrating, but not in order to limit the enforceable scope of the utility model, the change of its relativeness or adjustment, under no essence change technology contents, when also being considered as the enforceable category of the utility model.
Embodiment one
Present embodiment provides a kind of apparatus for cleansing semiconductor wafer, and as shown in Figure 3, described apparatus for cleansing semiconductor wafer 30 comprises rinse bath 31, is provided with cleaning agent injecting-unit 32 in the described rinse bath 31; Described apparatus for cleansing semiconductor wafer 30 also comprises cleaning agent supply part 33, and described cleaning agent supply part 33 communicates with described cleaning agent injecting-unit 32.
Further, described cleaning agent injecting-unit 33 comprises at least 1 nozzle 331 as shown in Figure 4, and described nozzle 331 is located at side in the rinse bath 31 or/and the bottom surface.Described cleaning agent 34 be deionized water (Deionization Water, DIW).
Further, described cleaning agent supply part 33 can also comprise some sections scavenge pipes, adopts several sections scavenge pipes to be located at the side top of polishing target, is used for the side of cleaning polishing target; Adopt several sections scavenge pipes be located at the polishing target under, be used for the front surface of cleaning polishing target.As seen, apparatus for cleansing semiconductor wafer described in the utility model has comprehensive cleaning function.
Embodiment two
Present embodiment also provides a kind of semiconductor wafer polishing system, as shown in Figure 5, described semiconductor wafer polishing system 50 comprises: the polishing block 51 that can move up and down, polishing pad 52, the rubbing head 53 that can move up and down, polishing agent supply part 54, apparatus for cleansing semiconductor wafer 55; Described polishing pad 52 is close to described polishing block 51 upper surfaces; Described rubbing head 53 is located at described polishing pad 52 tops, in order to keep polishing target 56; Described polishing agent supply part 54 is located at the top of described polishing pad 52 and is positioned at a side of rubbing head 53, is used for supplying with polishing agent 57; Described apparatus for cleansing semiconductor wafer 55 is located at a side of described polishing block 51, is used for cleaning polishing target 56.Described apparatus for cleansing semiconductor wafer 55 comprises rinse bath 551, is provided with cleaning agent injecting-unit 552 in the described rinse bath 551; Described apparatus for cleansing semiconductor wafer 55 also comprises cleaning agent supply part 553, described cleaning agent supply part 553 communicates with described cleaning agent injecting-unit 552, and cleaning agent supply part 553 offers described cleaning agent injecting-unit 552 with cleaning agent 554 and ejects cleaning polishing target 56.Described polishing block 51 moves up and down in rotary manner; Described rubbing head 53 moves up and down with respect to described polishing block 51 in rotary manner.Described rubbing head 53 move left and right are travelled to and fro between between polishing block 51 and the rinse bath 55.
Further, as shown in Figure 6, described cleaning agent injecting-unit 552 comprises at least 1 nozzle 5521, and described nozzle 5521 is located at side in the rinse bath 551 or/and the bottom surface.Described cleaning agent 554 be deionized water (Deionization Water, DIW).
The operation principle of described semiconductor wafer polishing system is: polishing target (as semiconductor wafer) 56 keeps by rubbing head 53, therefore can drive 56 swings of polishing target when moving down in rubbing head 53 rotations, polishing target 56 is pressed to polishing pad 52 with polished 53 of certain pressure.Meanwhile, polishing block 51 also rotates with polishing pad 52 and moves up, so polishing pad 52 and the 56 formation relative motions of polishing target, and in this state, polishing agent supply part 54 is applied to polishing agent 57 on the surface of polishing pad 52.Polishing agent 57 is along the diffusion into the surface of polishing pad 52, and enters the zone of 56 of polishing pad 52 and polishing targets when polishing pad 52 and 56 relative motions of polishing target, and therefore polished polishing target 56 is surperficial polished.After polishing finishes, rubbing head 53 drives polishing target 56 move left and right to the top of rinse bath 551, cleaning agent supply part 553 provides cleaning agent 554 to described cleaning agent injecting-unit 552 at this moment, and cleaning agent injecting-unit 552 cleans to polishing target 56 jet cleaners 554 that remain on rubbing head 53 belows.Specifically, semiconductor wafer polishing system described in the utility model is to finish polishing by the chemical reaction of the relative motion of 56 of polishing block 51, polishing pad 52 and polishing targets and polishing agent 57 is collaborative, has also finished the cleaning of polishing target 56 after polishing by apparatus for cleansing semiconductor wafer simultaneously.
Semiconductor wafer polishing system described in the utility model has been realized each polishing target automatic cleaning after polishing, has avoided the polishing target to contact with air after polishing with before cleaning; And the utility model adopts deionized water that the polishing target is cleaned, and can thoroughly remove the chemical residual of polishing target surface.
In sum, the utility model has effectively overcome various shortcoming of the prior art and the tool high industrial utilization.
Above-described embodiment is illustrative principle of the present utility model and effect thereof only, but not is used for restriction the utility model.Any person skilled in the art scholar all can be under spirit of the present utility model and category, and above-described embodiment is modified or changed.Therefore, have in the technical field under such as and know that usually the knowledgeable modifies or changes not breaking away from all equivalences of finishing under spirit that the utility model discloses and the technological thought, must be contained by claim of the present utility model.
Claims (6)
1. a semiconductor wafer polishing system is characterized in that, described semiconductor wafer polishing system comprises:
The polishing block that can move up and down;
Polishing pad is close to described polishing block upper surface;
The rubbing head that can move up and down is located at described polishing pad top, in order to keep the polishing target;
The polishing agent supply part is located at the top of described polishing pad and is positioned at a side of rubbing head;
Apparatus for cleansing semiconductor wafer is located at a side of described polishing block, is used for the cleaning polishing target; Described apparatus for cleansing semiconductor wafer comprises rinse bath, is provided with the cleaning agent injecting-unit in the described rinse bath; Described apparatus for cleansing semiconductor wafer also comprises the cleaning agent supply part, and described cleaning agent supply part communicates with described cleaning agent injecting-unit.
2. semiconductor wafer polishing system according to claim 1, it is characterized in that: described cleaning agent injecting-unit comprises at least 1 nozzle.
3. semiconductor wafer polishing system according to claim 1 is characterized in that: described nozzle is located at side in the rinse bath or/and the bottom surface.
4. semiconductor wafer polishing system according to claim 1, it is characterized in that: described cleaning agent is deionized water.
5. semiconductor wafer polishing system according to claim 1, it is characterized in that: described polishing block moves up and down in rotary manner; Described rubbing head moves up and down with respect to described polishing block in rotary manner.
6. semiconductor wafer polishing system according to claim 1, it is characterized in that: described rubbing head move left and right is travelled to and fro between between polishing block and the rinse bath.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220564271 CN203031439U (en) | 2012-10-30 | 2012-10-30 | Semiconductor wafer polishing system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220564271 CN203031439U (en) | 2012-10-30 | 2012-10-30 | Semiconductor wafer polishing system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203031439U true CN203031439U (en) | 2013-07-03 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220564271 Expired - Fee Related CN203031439U (en) | 2012-10-30 | 2012-10-30 | Semiconductor wafer polishing system |
Country Status (1)
| Country | Link |
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| CN (1) | CN203031439U (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104400618A (en) * | 2014-09-23 | 2015-03-11 | 上海华力微电子有限公司 | Equipment and method for FinFET polycrystalline silicon chemical mechanical grinding |
| CN106985060A (en) * | 2016-01-18 | 2017-07-28 | 三星电子株式会社 | Substrate attenuation device, the method that substrate is thinned and the method for manufacturing semiconductor packages |
| CN107993921A (en) * | 2017-11-27 | 2018-05-04 | 上海超硅半导体有限公司 | Curing means and maintaining process after a kind of wafer polishing |
| CN109352513A (en) * | 2018-12-13 | 2019-02-19 | 上海超硅半导体有限公司 | A kind of polishing wafer method |
| CN109500729A (en) * | 2019-01-25 | 2019-03-22 | 云南蓝晶科技有限公司 | Sapphire polishes no wax absorption layer |
| CN109860085A (en) * | 2019-03-01 | 2019-06-07 | 若名芯半导体科技(苏州)有限公司 | A kind of silicon wafer CMP downstream equipment and processing flow |
-
2012
- 2012-10-30 CN CN 201220564271 patent/CN203031439U/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104400618A (en) * | 2014-09-23 | 2015-03-11 | 上海华力微电子有限公司 | Equipment and method for FinFET polycrystalline silicon chemical mechanical grinding |
| CN104400618B (en) * | 2014-09-23 | 2017-05-24 | 上海华力微电子有限公司 | Equipment and method for FinFET polycrystalline silicon chemical mechanical grinding |
| CN106985060A (en) * | 2016-01-18 | 2017-07-28 | 三星电子株式会社 | Substrate attenuation device, the method that substrate is thinned and the method for manufacturing semiconductor packages |
| CN107993921A (en) * | 2017-11-27 | 2018-05-04 | 上海超硅半导体有限公司 | Curing means and maintaining process after a kind of wafer polishing |
| CN109352513A (en) * | 2018-12-13 | 2019-02-19 | 上海超硅半导体有限公司 | A kind of polishing wafer method |
| CN109500729A (en) * | 2019-01-25 | 2019-03-22 | 云南蓝晶科技有限公司 | Sapphire polishes no wax absorption layer |
| CN109860085A (en) * | 2019-03-01 | 2019-06-07 | 若名芯半导体科技(苏州)有限公司 | A kind of silicon wafer CMP downstream equipment and processing flow |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130703 Termination date: 20181030 |
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| CF01 | Termination of patent right due to non-payment of annual fee |