CN203013741U - Electrode structure and crystalline silicon solar cell having same - Google Patents
Electrode structure and crystalline silicon solar cell having same Download PDFInfo
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- CN203013741U CN203013741U CN201220456014.0U CN201220456014U CN203013741U CN 203013741 U CN203013741 U CN 203013741U CN 201220456014 U CN201220456014 U CN 201220456014U CN 203013741 U CN203013741 U CN 203013741U
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Abstract
The utility model provides an electrode structure and a crystalline silicon solar cell having the same. The electrode structure comprises main grids arranged on the surface of a silicon wafer and a plurality of auxiliary grids connected with the main grids, wherein each auxiliary grid comprises two parallel main lines and two connecting lines which are respectively arranged on two ends of the main lines to form a closed pattern with the main lines, the auxiliary grids form quadrilateral patterns with four top angles which are chamfer angles on the surface of the silicon wafer, and the connecting lines of the auxiliary grids opposite to the chamfer angles are bend lines. According to the electrode structure, the connecting lines of the auxiliary grids opposite to the chamfer angles are bend lines, then corresponding connecting lines of fine grids of screen patterns are also bend lines, therefore, the silk threads of the silk screen can be effectively prevented from partially overlapping or completely overlapping with parts of the connecting lines of pre-formed silk screen patterns during the manufacturing process of screen, thereby avoiding the problems that the connecting lines become thinner and even the grids are broken since the silk threads overlapped with the connecting lines of the silk screen patterns may overlap with connecting lines of the electrode structure to be printed during the electrode printing process.
Description
Technical field
The utility model relates to area of solar cell, in particular to a kind of electrode structure and have its crystal silicon solar batteries.
Background technology
Now solar cell is as a kind of environment-protecting clean energy, very swift and violent of technical development, and silk screen printing is as a critical process of solar cell manufacturing technology, and efficient, the cost of solar cell played conclusive effect.As extremely shown in Figure 2 in Fig. 1, the developing direction of present silk screen technology is that the main line 21 ' of secondary grid 2 ' is more and more thinner, the advantage of doing like this is to reduce on the one hand the light-receiving area of the shielded area raising battery of battery surface, can print on the other hand slurry still less, thereby the consumption of saving slurry reduces costs.
Main line 21 ' attenuate bring above-mentioned advantage in, also have some drawbacks, because, silk-screen printing technique comprises the process of making half tone, need to spray one deck emulsion on silk screen in making the half tone process, utilize the blueprint fabrication techniques to go out the silk-screen patterns A ' identical with the pattern of electrode structure, the thick grid of silk-screen patterns A ' corresponding with main grid 1 ', main lines 21 ' the thin grid of silk-screen patterns A ' and secondary grid 2 ' are corresponding, and the connecting line of adjacent thin grid is corresponding to the connecting line 22 ' of the main line 21 ' of the secondary grid 2 ' on electrode structure.Generally between 15～30 μ m, generally between 40～120 μ m, along with the development of solar battery technology, the width of now thin grid is generally below 60um for the width of the thin grid of the silk-screen patterns corresponding with the main line 21 ' of secondary grid 2 ' due to the string diameter of silk screen B.during for fear of the making half tone, the silk thread of silk screen B causes live width defective in the middle of being positioned at thin grid, therefore, when making half tone need to the silk thread of silk screen B with certain angle angle [alpha] of throwing the net is carefully arranged between grid, as shown in Figure 3, the angle [alpha] of throwing the net is typically chosen in 22.5 °～60 °, but a chamfering is arranged generally in silk-screen patterns A ', as shown in Figure 1, the connecting line 22 ' of the chamfering place main line 21 ' of the connecting line counter electrode structure of the thin grid corresponding with chamfering, at this moment according to conventional way, the connecting line at the chamfering place of silk-screen patterns A ' and the silk thread of silk screen B can be in parallel or approximate parastate, at this moment inevitably can cause silk thread cover part connecting line to cause the connecting line width too small, even silk thread covers connecting line fully and causes the connecting line interruption, the half tone that obtains is made defective, and then cause when printing because the thin too little difficult printing of grid width causes defective battery to increase.
The utility model content
The utility model aims to provide a kind of electrode structure and has its crystal silicon solar batteries, to obtain meeting the electrode of designing requirement.
To achieve these goals, according to an aspect of the present utility model, a kind of electrode structure is provided, comprise the main grid and many that are connected with main grid secondary grid that are arranged on silicon chip surface, secondary grid comprise that two main lines that are parallel to each other and two lay respectively at the two ends of main line and form the connecting line of closed pattern with two main lines, all secondary grid form four quadrangle patterns that drift angle is chamfering at silicon chip surface, and the connecting line of the secondary grid relative with chamfering is folding line.
Further, above-mentioned folding line comprises: at least two first connecting lines vertical with main line; One or more second connecting line parallel with main line, the first connecting line and the second connecting line are connected successively and form step-like folding line, and an end of the first connecting line that is positioned at the two ends of folding line is connected with main line respectively.
Further, the end points line that is positioned at same end of the main line of all the secondary grid relative with above-mentioned chamfering is straight line, and the angle of straight line and any main line is 30 °～60 °.
Further, the secondary grid relative with each chamfering of above-mentioned quadrangle patterns have 3～5.
Further, the width of above-mentioned secondary grid is a, and the length of the first connecting line is b, and a/10≤b≤a/2.
Further, the angle of above-mentioned straight line and any main line is 45 °, and the secondary grid relative with each chamfering have four, and the width a of secondary grid is 2mm, and the length b of the first connecting line is 0.4mm.
Further, four drift angles of above-mentioned silicon chip are chamfering, being positioned at the point of the Chamfer Edge of close silicon chip of connecting line at chamfering place and the distance at this edge is 1.5mm, outermost main line is 1.5mm with distance near the edge of itself and silicon chip in parallel, and the distance that is positioned at connecting line outside the chamfering of the silicon chip silicon chip edge parallel and close with it with main grid is 1.5mm|.
According on the other hand of the present utility model, a kind of crystal silicon solar batteries is provided, the electrode of this solar cell has above-mentioned electrode structure.
Use the technical solution of the utility model, the connecting line of the secondary grid relative with chamfering is folding line, the connecting line of the thin grid of the silk-screen patterns corresponding with it is also folding line so, thereby in half tone manufacturing process, can effectively avoid the position of the connecting line of the silk thread of silk screen and pre-formed silk-screen patterns to overlap or fully overlapping, and then in the process that prints electrode, having avoided also can be overlapping with the connecting line of the electrode structure of wish printing with the overlapping silk thread of the connecting line of silk-screen patterns, causes the attenuate problem of even disconnected grid of connecting line.Connecting line according to the secondary grid of the electrode of above-mentioned electrode structure printing and connecting line especially chamfering place can reach design load, and then collected current well.
Description of drawings
The Figure of description that consists of the application's a part is used to provide further understanding of the present utility model, and illustrative examples of the present utility model and explanation thereof are used for explaining the utility model, do not consist of improper restriction of the present utility model.In the accompanying drawings:
Fig. 1 shows the electrode structure schematic diagram of crystal silicon solar batteries of the prior art;
Fig. 2 shows the enlarged drawing of the D part of electrode structure shown in Figure 1;
Fig. 3 shows when adopting prior art to make half tone, the relative position relation schematic diagram of silk-screen patterns A ' and silk screen B, there is shown the part of silk-screen patterns A ', netted lines are the part of silk screen B, be solidified with photoresists C between netted lines outside silk-screen patterns A ', and show the angle [alpha] of throwing the net;
Fig. 4 shows the electrode structure schematic diagram in a kind of preferred embodiment of the present utility model;
Fig. 5 shows the enlarged drawing of the E part of electrode structure shown in Figure 4; And
Fig. 6 shows when adopting prior art to make half tone, the silk-screen patterns A identical with the pattern of electrode structure shown in Figure 4 and the relative position relation schematic diagram of silk screen B, there is shown the part of silk-screen patterns A, netted lines are the part of silk screen B, are solidified with photoresists C between the netted lines outside silk-screen patterns A.
Embodiment
Need to prove, in the situation that do not conflict, embodiment and the feature in embodiment in the application can make up mutually.Describe below with reference to the accompanying drawings and in conjunction with the embodiments the utility model in detail.
As shown in Figure 4 and Figure 5, in a kind of typical embodiment of the utility model, a kind of electrode structure is provided, comprise the main grid 1 and many that are connected with main grid 1 secondary grid 2 that are arranged on silicon chip surface, secondary grid 2 comprise that two main lines that are parallel to each other 21 and two lay respectively at the two ends of main line 21 and form the connecting line 22 of closed pattern with two main lines 21, all secondary grid 2 form four quadrangle patterns that drift angle is chamfering at silicon chip surface, and the connecting line 22 of the secondary grid 2 relative with chamfering is folding line.
in electrode structure as shown in Figure 4 and Figure 5, the connecting line 22 of the secondary grid 2 relative with chamfering is folding line, the connecting line of the thin grid of the silk-screen patterns corresponding with it is also folding line so, thereby in half tone manufacturing process, as shown in Figure 6, can effectively avoid the position of the connecting line of the silk thread of silk screen B and pre-formed silk-screen patterns A to overlap or fully overlapping, and then in the process that prints electrode, having avoided also can be overlapping with the connecting line 22 of the electrode structure of wish printing with the overlapping silk thread of the connecting line of silk-screen patterns A, cause the attenuate problem of even disconnected grid of connecting line 22.Connecting line 22 according to the secondary grid 2 of the electrode of above-mentioned electrode structure printing and connecting line 22 especially chamfering place can reach design load, and then collected current well.
As shown in Figure 5, folding line comprise at least two with vertical the first connecting line 221 and one or more second connecting line 222 parallel with main line 21 of main line 21, the first connecting line 221 and the second connecting line 222 are connected successively and form step-like folding line, and an end of the first connecting line 221 that is positioned at the two ends of folding line is connected with main line 21 respectively.
Folding line is designed to step-like, structure is comparatively regular, operates than being easier in the process that half tone is made; In the process of screen printing electrode, the first connecting line 221 and the second connecting line 222 all can form angle with the silk thread of silk screen, effectively avoid the attenuate appearance of even disconnected grid of connecting line 22.
As shown in Figure 5, the end points line that is positioned at same end of the main line 21 of the secondary grid 2 of all relative with chamfering is straight line, and the angle of this straight line and any main line 21 is 30 °～60 °.The end points line that is positioned at same end of the main line 21 of the secondary grid 2 of all relative with chamfering is set to straight line, makes the design of secondary grid 2 have systematicness, has guaranteed the uniformity of secondary grid 2 collected currents, transmission current; And the angle of this straight line and main line 21 is set to 30 °～60 °, can guarantee and the edge of the silicon chip distance at a distance of 1.5mm.
In a kind of preferred embodiment of the present utility model, the secondary grid 2 relative with each chamfering of electrode structure have 3～5.The purpose that the drift angle that will be in quadrangle patterns is designed to fillet guarantees that pattern is consistent with the Edge Distance of silicon chip.After the too many words of secondary grid print, because the turning is too many, visually this part has the sensation of chap, affects the outward appearance of battery finished product; If can not guarantee very little the distance with edge 1.5mm, therefore, unsuitable too much or very few at the secondary grizzly bar number at this place.
In order to make the silk-screen patterns corresponding with electrode structure be convenient to make, electrode structure should not be too complicated, and the width of the secondary grid 2 of preferred electrode structure is a, and the length of the first connecting line 221 is b, and a/10≤b≤a/2.
As shown in Figure 5, in the another kind of preferred embodiment of the utility model, the endpoint line line that is positioned at same end of the main line 21 of all the secondary grid 2 relative with chamfering of electrode structure and the angle of any main line 21 are 45 °, the secondary grid 2 relative with each chamfering have four, the width a of secondary grid 2 is 2mm, and the length b of the first connecting line 221 is 0.4mm.Make in the process of electrode by silk-screen printing technique according to above-mentioned electrode knot, silk-screen patterns A is identical with electrode structure, connecting line in the corresponding silk-screen patterns of connecting line 22 of electrode, the position relationship of silk screen B and silk-screen patterns A as shown in Figure 6, there is not the problem that attenuates of the connecting line that makes silk-screen patterns A in silk thread as seen from Figure 6, and the main line 21 and each connecting line 22 that therefore print the secondary grid 2 that obtain can meet design requirement well.
As shown in Figure 4, four drift angles of silicon chip are chamfering, four drift angles of silicon chip are chamfering, being positioned at the point of the Chamfer Edge of close silicon chip of connecting line 22 at chamfering place and the distance at this edge is 1.5mm, outermost main line 21 is 1.5mm with distance near the edge of itself and silicon chip in parallel, and the distance that is positioned at connecting line 22 outside the chamfering of the silicon chip silicon chip edge parallel and close with it with main grid 1 is 1.5mm.
At first the silicon wafer to manufacture process will melt the silicon material, and carrying out the finished product that the monocrystalline pull-rod produces is a cylinder.Take 156 * 156mm monocrystalline silicon piece as example, the cylinder diameter of producing is 200mm.Then in order to keep maximum area, cut the column that forms with fillet at the four sides; Then carry out slices across and form the silicon chip that thickness is 200 μ m left and right.The grid line of main grid 1 and secondary grid 2 apart from the silicon chip edge operated by rotary motion in about 1.5mm, this is to be etching edge because a procedure is arranged in battery manufacturing process, in etching process, etching liquid will extend a segment distance to inside battery, grid line destroyed for fear of grid line, within can not be printed onto this segment distance; And be printed onto the function that can satisfy the submarginal electric charge of collection apart from silicon chip edge 1.5mm place when the main line 21 of secondary grid 2 and connecting line 22.
In the another kind of typical embodiment of the utility model, a kind of crystal silicon solar batteries also is provided, the electrode of this solar cell has above-mentioned electrode structure.Because electrode structure of the present utility model does not exist connecting line 22 to attenuate or the phenomenon of disconnected grid, the crystal silicon solar batteries that therefore has it has the effect of collecting preferably surface current, has therefore improved the photoelectric conversion efficiency of crystal silicon solar batteries.
The above is only preferred embodiment of the present utility model, is not limited to the utility model, and for a person skilled in the art, the utility model can have various modifications and variations.All within spirit of the present utility model and principle, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection range of the present utility model.
Claims (8)
1. electrode structure, comprise the main grid (1) that is arranged on silicon chip surface and the many secondary grid (2) that are connected with described main grid (1), described secondary grid (2) comprise that two main lines that are parallel to each other (21) and two lay respectively at the two ends of described main line (21) and form the connecting line (22) of closed pattern with two described main lines (21), all described secondary grid (2) form four quadrangle patterns that drift angle is chamfering at described silicon chip surface, it is characterized in that, the connecting line (22) of the described secondary grid (2) relative with described chamfering is folding line.
2. electrode structure according to claim 1, is characterized in that, described folding line comprises:
Article at least two, first connecting line (221) vertical with described main line (21);
One or more second connecting line (222) parallel with described main line (21), described the first connecting line (221) and described the second connecting line (222) are connected successively and form step-like folding line, and an end of described the first connecting line (221) that is positioned at the two ends of described folding line is connected with described main line (21) respectively.
3. electrode structure according to claim 2, it is characterized in that, the end points line that is positioned at same end of the main line (21) of the described secondary grid of all relative with described chamfering (2) is straight line, and the angle of described straight line and any described main line (21) is 30 °～60 °.
4. electrode structure according to claim 3, is characterized in that, the described secondary grid (2) relative with each chamfering of described quadrangle patterns have 3～5.
5. electrode structure according to claim 3, is characterized in that, the width of described secondary grid (2) is a, and the length of described the first connecting line (221) is b, and a/10≤b≤a/2.
6. electrode structure according to claim 3, it is characterized in that, the angle of described straight line and any described main line (21) is 45 °, the described secondary grid (2) relative with each described chamfering have four, the width a of described secondary grid (2) is 2mm, and the length b of described the first connecting line (221) is 0.4mm.
7. the described electrode structure of any one according to claim 1 to 6, it is characterized in that, four drift angles of described silicon chip are chamfering, being positioned at the point of the Chamfer Edge of close described silicon chip of described connecting line (22) at described chamfering place and the distance at this edge is 1.5mm, outermost described main line (21) is 1.5mm with distance near the edge of itself and described silicon chip in parallel, and the distance that is positioned at described connecting line (22) outside the chamfering of the described silicon chip silicon chip edge parallel and close with it with described main grid (1) is 1.5mm.
8. a crystal silicon solar batteries, is characterized in that, the electrode of described solar cell has electrode structure as described in any one in claim 1 to 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201220456014.0U CN203013741U (en) | 2012-09-07 | 2012-09-07 | Electrode structure and crystalline silicon solar cell having same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201220456014.0U CN203013741U (en) | 2012-09-07 | 2012-09-07 | Electrode structure and crystalline silicon solar cell having same |
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| Publication Number | Publication Date |
|---|---|
| CN203013741U true CN203013741U (en) | 2013-06-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201220456014.0U Expired - Lifetime CN203013741U (en) | 2012-09-07 | 2012-09-07 | Electrode structure and crystalline silicon solar cell having same |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117219687A (en) * | 2023-11-06 | 2023-12-12 | 晶科能源(海宁)有限公司 | Solar cell and photovoltaic module |
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2012
- 2012-09-07 CN CN201220456014.0U patent/CN203013741U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117219687A (en) * | 2023-11-06 | 2023-12-12 | 晶科能源(海宁)有限公司 | Solar cell and photovoltaic module |
| CN117219687B (en) * | 2023-11-06 | 2024-03-12 | 晶科能源(海宁)有限公司 | Solar cell and photovoltaic module |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130619 |
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| CX01 | Expiry of patent term |