CN203013731U - Silicon carbide device with ohmic contact protection layer - Google Patents
Silicon carbide device with ohmic contact protection layer Download PDFInfo
- Publication number
- CN203013731U CN203013731U CN201220474757.0U CN201220474757U CN203013731U CN 203013731 U CN203013731 U CN 203013731U CN 201220474757 U CN201220474757 U CN 201220474757U CN 203013731 U CN203013731 U CN 203013731U
- Authority
- CN
- China
- Prior art keywords
- ohmic contact
- protection layer
- silicon carbide
- layer
- protective layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Abstract
The utility model discloses a silicon carbide device with an ohmic contact protection layer. The device comprises silicon carbide, an ohmic contact layer deposited on the surface of the silicon carbide, and a protection layer deposited on the ohmic contact layer, wherein the protection layer is composed of titanium nitride. Firstly, the protection layer formed on the ohmic contact layer has excellent antioxygenic property at a high temperature, and can prevent partial oxidization deactivation of the ohmic contact during ohmic contact annealing and subsequent processes; secondly, the protection layer is very high in chemical stability at a room temperature; and finally, the protection layer is high in rigidity and good in mechanical property, and can play the function of well protecting the ohmic contact layer and prevent various physical actions from damaging the ohmic contact.
Description
Technical field:
The utility model relates to the silicon carbide device technical field, relates in particular to a kind of silicon carbide device with ohmic contact protective layer.
Background technology:
Carborundum (SiC) is as third generation semi-conducting material, has high energy gap (2.4-3.3eV), high thermal conductivity (5-7Wcm
-1K
-1), high critical breakdown electric field (＞2 * 10
5Vcm
-1), a series of advantages such as electron mobility, stable chemical performance, high rigidity, rub resistance and radioresistance suitable with silicon (Si), have a wide range of applications at high temperature, high frequency, the aspect such as high-power.
A kind of key process technology during ohmic contact is made as semiconductor, its purpose is that when making semi-conducting material apply voltage, the pressure drop of contact position is enough little, to such an extent as to do not affect performance of devices.If the poor reliability of ohmic contact resistance can make the ON resistance of device raise, can cause the inefficacy of device when serious.The preparation of SiC ohmic contact due to the high annealing temperature of needs, in the preparation process of device, needs preparation in advance, to prevent that high-temperature annealing process is on the impact of subsequent technique.But some chemistry in subsequent technique are, physical action, also can form the destruction to the SiC ohmic contact, thus to protect the ohmic contact place, prevent subsequent technique and device use in for the damage of ohmic contact.
At present, the upper ohmic contact layer of SiC is generally metal or alloy.It is low that but these materials are faced with hardness usually, easily by mechanical damage; Corrosion-resistant is easily by the subsequent technique corrosion contamination; A little less than oxidation resistance, the easy oxidized shortcomings that waits in high-temperature technology.These shortcomings all can cause the damage of ohmic contact, cause ohmic contact resistance to raise, and even lose efficacy, and device reliability is reduced.The inventor proposes a kind of with the technical scheme of titanium nitride as the ohmic contact protective layer through constantly experiment.
The utility model content:
Technical problem to be solved in the utility model just is to overcome the deficiencies in the prior art, and a kind of silicon carbide device with ohmic contact protective layer is provided.Can protect the carborundum ohmic contact by this protective layer, improve the physical and chemical performance of ohmic contact, simplify in subsequent technique ohmic contact protection step, raising device reliability.
In order to solve the problems of the technologies described above; silicon carbide device with ohmic contact protective layer described in the utility model has adopted following technical proposals: this device comprises: carborundum, at the ohmic contact layer of silicon carbide deposition and the protective layer that deposits on ohmic contact layer, described protective layer is titanium nitride.
Furthermore, in technique scheme, described carborundum is used to form the surface of ohmic contact and adopts N-type doping or the doping of P type, and doping content is at least 1 * 10
15cm
-3
Furthermore, in technique scheme, the material of described ohmic contact layer institute deposit is one or several in metal, alloy and compound.
After adopting technique scheme, the utility model has following beneficial effect compared with prior art:
The utility model is used titanium nitride (TiN) as the protective layer of ohmic contact.At first, this protective layer at high temperature has good antioxygenic property, can prevent ohm contact portion oxidation deactivation in the process of ohmic contact annealing and follow-up technique.Secondly, because the room temperature lower protective layer has very high chemical stability, be difficult to and water, steam, hydrochloric acid, sulfuric acid, phosphatase reaction, be slightly soluble in HF acid, HNO
3, this just provides good barrier layer for ohmic contact layer, prevents process engineering to the corrosiveness of ohmic contact layer, has also simplified follow-up etching process for the special protection of ohmic contact.At last, the hardness of protective layer is high, and good mechanical property can form good protective action to ohmic contact layer, prevents that various physical actions are to the damage of ohmic contact.
Description of drawings:
Fig. 1 is cross-sectional view of the present utility model.
Embodiment:
As shown in Figure 1, device of the present utility model comprises: carborundum 1, the ohmic contact layer 2 of carborundum 1 surface deposition and on ohmic contact layer 2 deposition protective layer 3, described protective layer 3 is titanium nitride.
Described carborundum 1 is used to form the surface of ohmic contact and adopts N-type doping or the doping of P type, and doping content is at least 1 * 10
15cm
-3
The material of 2 deposits of described ohmic contact layer is one or several in metal, alloy and compound.Such as the adoptable material of ohmic contact layer 2 be: nickel, aluminium etc.
Certainly, the above is only specific embodiment of the utility model, be not to limit the utility model practical range, all equivalences of doing according to the described structure of the utility model claim, feature and principle change or modify, and all should be included in the utility model claim.
Claims (2)
1.
A kind of silicon carbide device with ohmic contact protective layer is characterized in that: this device comprises: carborundum (1), at the ohmic contact layer (2) of carborundum (1) surface deposition and at the protective layer (3) of the upper deposition of ohmic contact layer (2).
2. a kind of silicon carbide device with ohmic contact protective layer according to claim 1, is characterized in that: described protective layer (3) employing titanium nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201220474757.0U CN203013731U (en) | 2012-09-17 | 2012-09-17 | Silicon carbide device with ohmic contact protection layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201220474757.0U CN203013731U (en) | 2012-09-17 | 2012-09-17 | Silicon carbide device with ohmic contact protection layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203013731U true CN203013731U (en) | 2013-06-19 |
Family
ID=48605296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201220474757.0U Expired - Lifetime CN203013731U (en) | 2012-09-17 | 2012-09-17 | Silicon carbide device with ohmic contact protection layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203013731U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102832238A (en) * | 2012-09-17 | 2012-12-19 | 东莞市天域半导体科技有限公司 | Silicon carbide device with ohmic contact protection layer and production method of silicon carbide device |
-
2012
- 2012-09-17 CN CN201220474757.0U patent/CN203013731U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102832238A (en) * | 2012-09-17 | 2012-12-19 | 东莞市天域半导体科技有限公司 | Silicon carbide device with ohmic contact protection layer and production method of silicon carbide device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106887470B (en) | Ga2O3Schottky diode device structure and preparation method thereof | |
| JP2017510992A5 (en) | ||
| JP5458652B2 (en) | Method for manufacturing silicon carbide semiconductor device | |
| CN106683994B (en) | Method for manufacturing P-type silicon carbide ohmic contact | |
| CN109742148A (en) | Silicon carbide UMOSFET device and preparation method thereof | |
| CN111048597B (en) | SBD device and preparation method thereof | |
| CN103904135A (en) | Schottky diode and manufacturing method thereof | |
| CN103493146A (en) | Printable medium that contains metal particles and effects etching, more particularly for making contact with silicon during the production of a solar cell | |
| CN104282766A (en) | Novel silicon carbide MOSFET and manufacturing method thereof | |
| CN203013731U (en) | Silicon carbide device with ohmic contact protection layer | |
| CN102832238A (en) | Silicon carbide device with ohmic contact protection layer and production method of silicon carbide device | |
| CN103928524B (en) | Carborundum UMOSFET devices and preparation method with N-type drift layer table top | |
| CN104681646A (en) | Silicon carbide embedded electrode planar photoconductive switch and manufacture method thereof | |
| CN109994539A (en) | A kind of silicon carbide junction barrier schottky diodes and preparation method thereof | |
| CN103199119B (en) | Groove schottky semiconductor device with super junction structure and manufacturing method thereof | |
| CN104952936A (en) | Fast recovery diode and manufacturing method thereof | |
| CN108206220A (en) | The preparation method of diamond Schottky diode | |
| CN106449774A (en) | Groove-type barrier schottky structure for optimizing electric field on surface and manufacturing method of groove-type barrier schottky structure | |
| CN104282765B (en) | A kind of carbide MOS devices and its manufacture method | |
| CN105355666B (en) | A kind of high voltage Schottky diode | |
| CN104183483B (en) | The preparation method of groove-shaped Schottky diode | |
| CN112670334A (en) | Gallium oxide SBD device and preparation method thereof | |
| CN105552108A (en) | Forming method of non-alloy ohmic contact of GaN HEMT device | |
| CN104319292A (en) | Novel silicon carbide MOSFET and manufacturing method thereof | |
| CN205810825U (en) | A kind of channel schottky chip of high conductivity |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130619 |
|
| CX01 | Expiry of patent term |