CN202975124U - Peak detection apparatus for leakage resistive current - Google Patents
Peak detection apparatus for leakage resistive current Download PDFInfo
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- CN202975124U CN202975124U CN 201220668122 CN201220668122U CN202975124U CN 202975124 U CN202975124 U CN 202975124U CN 201220668122 CN201220668122 CN 201220668122 CN 201220668122 U CN201220668122 U CN 201220668122U CN 202975124 U CN202975124 U CN 202975124U
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- operational amplifier
- resistance property
- field effect
- effect transistor
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- 238000001514 detection method Methods 0.000 title claims abstract description 24
- 239000013078 crystal Substances 0.000 claims abstract description 20
- 230000005669 field effect Effects 0.000 claims description 29
- 238000007599 discharging Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
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- Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)
Abstract
A peak detection apparatus for leakage resistive current includes an input terminal, an operational amplifier, a crystal diode, an FET and an output terminal, wherein the input terminal is connected with a non-inverting input terminal of the operational amplifier. The leakage resistive current is transmitted to the operational amplifier to be amplified through the input terminal. The crystal diode is connected between an input terminal of the operational amplifier and an input terminal of the output terminal. The leakage resistive current amplified by the operational amplifier is output to the peak detection apparatus by the output terminal. The FET is connected between an input terminal and a grounding terminal of the output terminal. By adjusting grid voltage, charge and discharge of the leakage resistive current to equivalent capacitance of the FET are controlled, so that the output terminal achieves the peak of the leakage resistive current. By adopting a simple circuit, the peak of the leakage resistive current can be detected and obtained, precision is high, cost is low and work states of lightning arresters can be reflected truly and effectively.
Description
Technical field
The utility model relates to a kind of leakage current in resistance property measuring technique, is specifically related to a kind of device that carries out peak detection to leaking current in resistance property.
Background technology
The leakage current of lightning arrester (claiming again to leak total current) has comprised the leakage capacity current and has leaked two parts of current in resistance property.Wherein leaking current in resistance property is the technical parameter that really reflects the leakage current running status.
Due to the conventionally necessary sampled leakage total current of the detection of leaking current in resistance property and voltage, by calculating voltage and the circuital angle of leakage, then utilize the trigonometric function relation to extrapolate the leakage current in resistance property.
Leak current in resistance property and generally only account for circuitally 10%～15%, the leakage current in resistance property value error that calculates through twice multiplication is larger.Therefore cause this conventional sense method to have two critical defects: 1, relatively poor, the duty that can't truly reflect lightning arrester of accuracy of detection; 2, testing cost is higher, uses the high pressure P T of sampled voltage due to needs, can't promote.
The utility model content
The utility model provides a kind of leakage current in resistance property peak detection device, and circuit structure is simple, and precision is high, and cost is low, and the duty of reaction lightning arrester that can be authentic and valid.
For achieving the above object, the utility model provides a kind of leakage current in resistance property peak detection device, and it comprises: input terminal, operational amplifier, crystal diode, field effect transistor and lead-out terminal;
Described input terminal is connected with the normal phase input end of operational amplifier, and the leakage current in resistance property transfers in operational amplifier by this input terminal and amplifies;
Described crystal diode is connected between the input end of the output terminal of operational amplifier and lead-out terminal, and after amplifying through operational amplifier, the leakage current in resistance property of output is via lead-out terminal output peak detection device;
Described field effect transistor is connected between the input end and earth terminal of lead-out terminal, by adjusting the grid voltage of field effect transistor, after the control algorithm amplifier amplifies, the leakage current in resistance property of output to the discharging and recharging of the equivalent capacity of field effect transistor, makes lead-out terminal reach the peak value that leaks current in resistance property.
The positive pole of described crystal diode is connected with the output terminal of operational amplifier, and the negative pole of this crystal diode is connected with the input end of lead-out terminal.
The drain electrode of described field effect transistor is connected with the input end of lead-out terminal, and the source electrode of this field effect transistor is connected with earth terminal, the external grid voltage of the grid of this field effect transistor.
In sum, leakage current in resistance property peak detection device provided by the utility model by simple circuit structure, can detect the peak value that obtains to leak current in resistance property, and precision is high, and cost is low, and the duty that reflects lightning arrester that can be authentic and valid.
Description of drawings
The circuit diagram of the leakage current in resistance property peak detection device that Fig. 1 provides for the utility model.
Embodiment
Below in conjunction with accompanying drawing, further illustrate specific embodiment of the utility model.
As shown in Figure 1, the utility model discloses a kind of leakage current in resistance property peak detection device, and it comprises: input terminal 1, operational amplifier 2, crystal diode 3, field effect transistor 4 and lead-out terminal 5.
Wherein, described input terminal 1 is connected with the normal phase input end of operational amplifier 2, and the leakage current in resistance property transfers in operational amplifier 2 by this input terminal 1 and amplifies.
Described crystal diode 3 is connected between the input end of the output terminal of operational amplifier 2 and lead-out terminal 5, and after amplifying through operational amplifier 2, the leakage current in resistance property of output is via lead-out terminal 5 output peak detection devices.
Described field effect transistor 4 is connected between the input end and earth terminal of lead-out terminal 5, by adjusting the grid voltage of field effect transistor 4, after control algorithm amplifier 2 amplifies, the leakage current in resistance property of output to the discharging and recharging of the equivalent capacity of field effect transistor 4, make lead-out terminal 5 outputs leak the peak value of current in resistance property.
The positive pole of described crystal diode 3 is connected with the output terminal of operational amplifier 2, and the negative pole of this crystal diode 3 is connected with the input end of lead-out terminal 5.
The drain D of described field effect transistor 4 is connected with the input end of lead-out terminal 5, and the source S of this field effect transistor 4 is connected with earth terminal, the external grid voltage of the grid G of this field effect transistor 4.
By the high-low level of corrective action in the grid voltage K of this field effect transistor 4, the leakage current in resistance property of output discharging and recharging the equivalent capacity of field effect transistor 4 after control algorithm amplifier 2 amplifies.Particularly, when grid voltage K is low level, after operational amplifier 2 amplifies, the leakage current in resistance property of output charges via the equivalent capacity of 3 pairs of field effect transistors 4 of crystal diode, due to the one-way conduction effect of crystal diode 3, after charging, lead-out terminal 5 reaches peak value and the output of leaking current in resistance property.After the peak value detection of leaking current in resistance property was complete, adjusting grid voltage K was high level, and the equivalent capacity of field effect transistor 4 is discharged, and waits for detection next time.
In the present embodiment, the model that described operational amplifier 2 adopts is TL062, and the model that described crystal diode 3 adopts is B1N4007, and the model that described field effect transistor 4 adopts is 3DJ6.Peak value is that the leakage current in resistance property of 1mA transfers to the normal phase input end of operational amplifier 2 from input terminal 1, after 2 pairs of leakage current in resistance property of operational amplifier amplify, via crystal diode 3 and lead-out terminal 5 output peak detection devices.And, when the grid voltage of field effect transistor 4 is low level 0, leakage current in resistance property after amplification charges through the equivalent capacity of 3 pairs of field effect transistors 4 of crystal diode, one-way conduction effect due to crystal diode 3, after charging, lead-out terminal 5 reaches peak value 1mA and the output of leaking current in resistance property, completes detection.Adjusting subsequently grid voltage K is high level 1, and the equivalent capacity of field effect transistor 4 is discharged, and waits for detection next time.
In sum, leakage current in resistance property peak detection device provided by the utility model by simple circuit structure, can detect the peak value that obtains to leak current in resistance property, and precision is high, and cost is low, and the duty that reflects lightning arrester that can be authentic and valid.
Although content of the present utility model has been done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to restriction of the present utility model.After those skilled in the art have read foregoing, for multiple modification of the present utility model with to substitute will be all apparent.Therefore, protection domain of the present utility model should be limited to the appended claims.
Claims (3)
1. one kind leaks current in resistance property peak detection device, it is characterized in that, comprises: input terminal (1), operational amplifier (2), crystal diode (3), field effect transistor (4) and lead-out terminal (5);
Described input terminal (1) is connected with the normal phase input end of operational amplifier (2), and the leakage current in resistance property transfers in operational amplifier (2) by this input terminal (1) and amplifies;
Described crystal diode (3) is connected between the input end of the output terminal of operational amplifier (2) and lead-out terminal (5), and after amplifying through operational amplifier (2), the leakage current in resistance property of output is via lead-out terminal (5) output peak detection device;
Described field effect transistor (4) is connected between the input end and earth terminal of lead-out terminal (5), by adjusting the grid voltage of field effect transistor (4), after control algorithm amplifier (2) amplifies, the leakage current in resistance property of output to the discharging and recharging of the equivalent capacity of field effect transistor (4), makes lead-out terminal (5) reach the peak value that leaks current in resistance property.
2. leakage current in resistance property peak detection device as claimed in claim 1, it is characterized in that, the positive pole of described crystal diode (3) is connected with the output terminal of operational amplifier (2), and the negative pole of this crystal diode (3) is connected with the input end of lead-out terminal (5).
3. leakage current in resistance property peak detection device as claimed in claim 2, it is characterized in that, the drain electrode of described field effect transistor (4) is connected with the input end of lead-out terminal (5), the source electrode of this field effect transistor (4) is connected with earth terminal, the external grid voltage of grid of this field effect transistor (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220668122 CN202975124U (en) | 2012-12-07 | 2012-12-07 | Peak detection apparatus for leakage resistive current |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220668122 CN202975124U (en) | 2012-12-07 | 2012-12-07 | Peak detection apparatus for leakage resistive current |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202975124U true CN202975124U (en) | 2013-06-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220668122 Expired - Lifetime CN202975124U (en) | 2012-12-07 | 2012-12-07 | Peak detection apparatus for leakage resistive current |
Country Status (1)
| Country | Link |
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| CN (1) | CN202975124U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103575962A (en) * | 2013-11-07 | 2014-02-12 | 苏州爱科博瑞电源技术有限责任公司 | Passive peak value follower circuit |
| CN111175565A (en) * | 2020-03-10 | 2020-05-19 | 无锡恒芯微科技有限公司 | Peak current detection circuit without sampling resistor |
-
2012
- 2012-12-07 CN CN 201220668122 patent/CN202975124U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103575962A (en) * | 2013-11-07 | 2014-02-12 | 苏州爱科博瑞电源技术有限责任公司 | Passive peak value follower circuit |
| CN103575962B (en) * | 2013-11-07 | 2016-03-02 | 苏州爱科博瑞电源技术有限责任公司 | Passive peak value follower circuit |
| CN111175565A (en) * | 2020-03-10 | 2020-05-19 | 无锡恒芯微科技有限公司 | Peak current detection circuit without sampling resistor |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130605 |