CN202968678U

CN202968678U - Vacuum evaporation device

Info

Publication number: CN202968678U
Application number: CN 201220694165
Authority: CN
Inventors: 盐野一郎; 林达也; 姜友松; 宫内充祐; 冈田胜久; 长江亦周
Original assignee: Shincron Co Ltd
Current assignee: Shincron Co Ltd
Priority date: 2012-12-14
Filing date: 2012-12-14
Publication date: 2013-06-05
Anticipated expiration: 2022-12-14

Abstract

The utility model provides a vacuum evaporation device, which can be used for maintaining the efficiency of an ion source, preventing large size of a device, and improving the maintenance. A vacuum evaporation device with high maintenance of an energy particle source is provided in vacuum evaporation devices with an energy particle source comprising irradiation ions or plasma and other energy particles. The vacuum evaporation device comprises a vault type substrate maintaining component (12), a rotation component, an evaporation component (34) and an energy particle source (38), wherein the vault type substrate maintaining component (12) is arranged in a vacuum container (10) and used for maintaining a plurality of substrates (14); the rotation component is used for driving the substrate maintaining component (12) to rotate; the evaporation component (34) is arranged in a mode of being opposite to the substrates (14); and the energy particle source (38) is used for irradiating energy particles to the substrates (14). Under a state that the induction part of energy particles is toward to the direction of the substrates, the energy particle source (38) is arranged in the inner wall surface of a door (10a) of the vacuum container (10).

Description

Vacuum deposition apparatus

Technical field

The utility model relates to the vacuum deposition apparatus of film, particularly possesses the vacuum deposition apparatus to the energy grain component of substrate irradiation ion etc.

Background technology

In the past, known have make thin-film material in vacuum vessel when substrate surface evaporates, by the ion assisted deposition device (for example, patent documentation 1) that carries out densification to the evaporation layer irradiation ion that is deposited on substrate.

In such evaporation coating device, utilize ion gun to the more low-energy gaseous ion of substrate irradiation, utilize simultaneously neutralizer in substrate irradiation and electronics (electronics), thus can in and the skew of the electric charge on the substrate that causes of gaseous ion, utilize simultaneously the kinetic energy of gaseous ion to make fine and close film.

Patent documentation 1: No. 4540746 communique of Japan's special permission

But, in the existing ion assisted deposition devices such as patent documentation 1, ion source is equipped on the bottom surface of vacuum vessel or the side beyond door, therefore when carrying out ionogenic part replacement or cleaning etc. and safeguard, the operator need to make health significantly enter in vacuum vessel, so the raising of the workability that expectation is safeguarded.

The utility model content

The utility model is completed in view of above-mentioned problem, and the purpose of this utility model is, is provided in the vacuum deposition apparatus of the energy grain component that possesses irradiation ion or plasma body homenergic particle the vacuum deposition apparatus that the maintainability of energy grain component is high.

Described problem is according to the vacuum deposition apparatus of technical scheme 1, solve in the following way, namely, this vacuum deposition apparatus makes the evaporation material evaporation to substrate in vacuum vessel, wherein, this vacuum deposition apparatus constitutes to be possessed: the substrate holding structure of dome-type, and it is equipped in described vacuum vessel, is used for keeping a plurality of described substrates; Rotating member, it is used for making this substrate holding structure rotation; The evaporation member, it is to arrange with the opposed mode of described substrate; And the energy grain component, it is used for described substrate irradiation energy particle, and described energy grain component induces section under the state of described orientation substrate at energy particle, is installed on the inner-wall surface of the door that sets at described vacuum vessel.

Like this, because the inner-wall surface at door is equipped with the energy grain component, so when safeguarding, the energy grain component just appear at open the door the operator near, the maintenance inspection of energy grain component becomes easily, has improved maintainability.

In addition, described energy grain component can be also ion source.

In addition, preferably, described vacuum deposition apparatus possesses for the neutralizer to described substrate irradiation electronics, and this neutralizer under the state of described orientation substrate, is installed on the inner-wall surface of the door that sets at described vacuum vessel in electronic induction section.

When consisting of as described above, because the inner-wall surface at door is equipped with neutralizer, so when safeguarding, neutralizer just appear at open the door the operator near, the maintenance inspection of neutralizer becomes easily, has improved maintainability.

And, be preferably spiral helicine metal pipe arrangement to the gas pipe arrangement of described ion source supply gas.Due to such formation, the gas pipe arrangement is formed the such shape of metal spring, can have flexible.

In addition, also can be formed by the starting material that have elasticity and have a Restoration to the gas pipe arrangement of described ion source supply gas.

In addition, described starting material with Restoration can be resins.

Owing to consisting of as described above, along with the switching of door, the flexible or deflection of gas pipe arrangement prevents that the gas pipe arrangement from damaging because the switching of door causes metal fatigue etc., thus the component life that can extend the gas pipe arrangement.

According to vacuum deposition apparatus of the present utility model, can improve the maintainability of energy grain component, and can cut down the required time of maintenance of energy grain component, thereby boost productivity.

Description of drawings

Fig. 1 is the concept map of the vacuum deposition apparatus of an embodiment of the present utility model.

Fig. 2 be illustrate an embodiment of the present utility model vacuum vessel the door position explanatory view.

Label declaration

1: vacuum deposition apparatus

10: vacuum vessel

10a: door

12: substrate holder

14: substrate

34: vapor deposition source

34a, 38a: flashboard

38: ion source

40: neutralizer

44: web member

G: hinge

K: end difference

Embodiment

Below, with reference to accompanying drawing, embodiment of the present utility model is described.

In addition, below the parts of explanation, configuration etc. are the examples that utility model is specialized, and are not used in restriction the utility model, certainly can carry out various changes according to aim of the present utility model, and equivalent are contained in interest field also.

Fig. 1 is the summary sectional view of the vacuum deposition apparatus 1 of an embodiment of the present utility model.

Vacuum deposition apparatus 1 is can be on one side to carry out to substrate irradiation ionic fluid the ion assisted deposition device that film forming is processed from the ion source 38 as an example of energy grain component on one side, maintains the substrate holder 12 as substrate holding structure above the inside of the vacuum vessel cylindraceous 10 of vertically placing.

And, be equipped with the vapor deposition source 34 as the evaporation member below the inside of vacuum vessel 10.

Utilize not shown vacuum pump to carry out exhaust to the inboard of vacuum vessel 10, make it become predetermined pressure (for example about 3 * 10 ^-2Pa～10 ^-4Pa).

As shown in Figure 1, in the present embodiment, be provided with a 10a in the side of vacuum vessel 10, be provided with ion source 38 and neutralizer 40 at the inner-wall surface of described door 10a.

As shown in Figure 2, the side at vacuum vessel 10 is provided with a 10a.

Inner-wall surface at this 10a is equipped with ion source 38 and neutralizer 40.

As shown in Figure 1, be can remain on around the mode that vertical axis rotates the parts of upside, the stainless steel that form dome-shaped in vacuum vessel 10 as the substrate holder 12 of substrate holding structure.The output shaft of the rotating member of substrate holder 12 and not shown motor links.At the lower surface of substrate holder 12, be supported with a plurality of substrates 14 as substrate in the mode of film forming face towards the below.

Substrate holder 12 is made of hemispheric dome shape roughly, but also can form the circular cone vault, the vault of any shape such as pyramid vault.

Substrate 14 is parts that resin (such as polyimide), quartz, chilled glass of adhering to dielectric film or absorbing film by film forming on the surface etc. has light transmission.

In the present embodiment, use discoideus parts as substrate 14, but shape being not limited to this, can be also other shapes of lens shape, cylindric, circular, rectangular plate shape and so on for example.

Vacuum vessel 10 is normally usedly in known film deposition system to have a roughly container of the stainless steel of the outer shape of cylinder, is earthing potential.And, be formed with described door 10a at its side.

Door 10a is linked to vacuum vessel 10 by hinge G, G, and can rotate open with respect to vacuum vessel 10 centered by hinge G, G axle.

And, being formed with end difference K at the face of vacuum vessel 10 inboards of this 10a, ion source 38 and neutralizer 40 are installed on this end difference K.

End difference K possesses by the scarp that the inboard step-down of vacuum vessel 10 is formed, and the upper surface side on the scarp of this end difference K constitutes with substrate 14 and faces.

Ion source 38 and neutralizer 40 are installed to the scarp (inner surface side) of this end difference K, thus, easily at a predetermined angle to substrate 14 irradiation ionic fluid and electron beams.

Be provided with not shown venting port in vacuum vessel 10, and be connected with not shown vacuum pump via venting port.And, be formed with in vacuum vessel 10 for import the gas introduction tube (not shown) of gas to inside.

Vapor deposition source 34 is the downsides that are equipped on vacuum vessel 10, the evaporation member that by the electron beam type of heating, oleophobic property, hydrophobic film material, high refractive index material or low-refraction material is heated and emit towards substrate 14.And vapor deposition source 34 can be also the member of direct heating mode or indirect heating mode constant resistance type of heating.

Be equipped with above vapor deposition source 34 can opening and closing operations flashboard 34a.

Ion source 38 possesses: the ion source main of irradiation ion; Be used for ion source main is arranged at the web member 44 of vacuum vessel 10; With being used for, gas, electric power, water coolant are imported the vacuum introduction part in vacuum vessel 10.

Possess for importing as the gas of the raw material of ion the not shown gas pipe arrangement of vacuum vessel 10 in the vacuum introduction part.The gas pipe arrangement of present embodiment constitutes spiral helicine metal pipe arrangement.

And the gas pipe arrangement is not limited to spiral helicine metal pipe arrangement, also can be formed by the starting material that have elasticity and have a Restoration.For example, can use plastic conduit etc.

Ion source 38 is to emit the device of ionic fluid towards substrate 14, by reactant gases (O for example ₂) or the plasma inducing of rare gas (for example Ar) derive charged ion (O ₂ ⁺, Ar ⁺), and accelerate to penetrate by acceleration voltage.In addition, be equipped with above ion source 38 and can utilize not shown controller to carry out the flashboard 38a of open and close controlling aptly.

In the present embodiment, possess ion source 38 and be used as the energy grain component, but be not limited to this, also can use for producing member etc. to the plasma source of substrate 14 irradiation plasma bodys or for generation of the active specy of active specy.

Neutralizer 40 is towards substrate 14 ejected electron (e ^-) device, derive electronics by the plasma inducing of the rare gas such as Ar, and utilize acceleration voltage to accelerate and ejected electron.Utilization neutralizes from the electronics that penetrates here and is attached to the ion on substrate 14 surfaces.

In the vacuum deposition apparatus 1 of present embodiment, neutralizer 40 sets as spaced a predetermined distance from ion source 38.The installation site of neutralizer 40 is so long as can get final product to the position that substrate 14 irradiation electronics neutralize.

Ion source 38 is installed on the outer circumferential side of substrate holder 12.Thus, the ionic fluid that irradiates from ion source 38 is angularly to substrate 14 incidents.

Like this, by making the ionic fluid that incides substrate 14 have angle, thereby make the ionic fluid that keeps the kinetic energy state from vergence direction bumped substrate 14 surfaces, can be to the evaporation material effect that is deposited in substrate 14 surfaces larger energy etc., discovery has obtained than in the past higher ion auxiliaring effect.

Claims

1. vacuum deposition apparatus, it makes the evaporation material evaporation to substrate in vacuum vessel, and described vacuum deposition apparatus is characterised in that,

This vacuum deposition apparatus constitutes to be possessed:

The substrate holding structure of dome-type, it is provided in described vacuum vessel, is used for keeping a plurality of described substrates;

Rotating member, it is used for making this substrate holding structure rotation;

The evaporation member, it is to arrange with the opposed mode of described substrate; And

The energy grain component, it is used for described substrate irradiation energy particle,

Described energy grain component induces section under the state of described orientation substrate at energy particle, is installed on the inner-wall surface of the door that sets at described vacuum vessel.

2. vacuum deposition apparatus according to claim 1, is characterized in that,

Described energy grain component is ion source.

3. vacuum deposition apparatus according to claim 1 and 2, is characterized in that,

Described vacuum deposition apparatus possesses for the neutralizer to described substrate irradiation electronics,

This neutralizer under the state of described orientation substrate, is installed on the inner-wall surface of the door that sets at described vacuum vessel in electronic induction section.

4. vacuum deposition apparatus according to claim 2, is characterized in that,

Gas pipe arrangement to described ion source supply gas is spiral helicine metal pipe arrangement.

5. vacuum deposition apparatus according to claim 2, is characterized in that,

Formed by the starting material that have elasticity and have a Restoration to the gas pipe arrangement of described ion source supply gas.

6. vacuum deposition apparatus according to claim 5, is characterized in that,

Described starting material with Restoration are resins.