CN202954088U - Semiconductor sedimentation structure having separation distance convenient to regulate - Google Patents
Semiconductor sedimentation structure having separation distance convenient to regulate Download PDFInfo
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- CN202954088U CN202954088U CN 201220602729 CN201220602729U CN202954088U CN 202954088 U CN202954088 U CN 202954088U CN 201220602729 CN201220602729 CN 201220602729 CN 201220602729 U CN201220602729 U CN 201220602729U CN 202954088 U CN202954088 U CN 202954088U
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- spacing
- convenient
- semiconductor deposition
- dull
- jet thrust
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Abstract
The utility model provides a semiconductor sedimentation structure having the separation distance convenient to regulate. The semiconductor sedimentation structure at least comprises a heating chassis, a container cover and a plurality of air injection assemblies, wherein the container cover is placed above the heating chassis, and the plurality of air injection assemblies are connected with the bottom of the container cover. Each air injection assembly comprises an air injection head, a plurality of air injection holes, air supplying pipes and three connection parts, wherein each air injection head has a cavity, the air injection holes are formed on the lower surface of each air injection head and are communicated with each cavity, each air supply pipe is communicated with each cavity and is arranged on the upper surface of each air injection head, and the connection parts have adjustable heights and are evenly arranged on the upper surface of each air injection head to be used for fixation. The tops of the connection parts are fixed at the bottom of the contain cover, and separation distance correcting plane boards having standard thicknesses are arranged between the heating chassis and the air injection heads. The semiconductor sedimentation structure having the separation distance convenient to regulate comprises the separation distance correcting plane boards, the separation distance is simple and easy to adjust, accuracy is high, a plurality of separation distance correcting plane boards having different thicknesses can be arranged, and corresponding separation distance correcting plane boards can be selected according to technological requirements during use.
Description
Technical field
The utility model belongs to field of semiconductor manufacture, relates to a kind of film deposition equipment, particularly relates to a kind of semiconductor deposition structure of being convenient to spacing.
Background technology
Semiconductor technology refers to the various technology of semiconductor machining, comprises the technology such as growing technology, thin film deposition, photoetching, etching, doping and process integration of wafer.Deposition technique is a very important technology in manufacture of semiconductor technique.Wherein, chemical vapor deposition (CVD) is the technology that is used for depositing multiple materials be most widely used in semi-conductor industry, and it can be used for depositing large-scale insulating material, most metals material and metal alloy compositions.In theory, during chemical Vapor deposition process, two or more gaseous state starting material are imported in a reaction chamber, then chemical reaction occurs in each other, forms a kind of new material, deposits on wafer surface.Chemical vapour deposition comprises aumospheric pressure cvd, plasma auxiliary chemical deposition, laser assisted electroless plating, organometallics deposition etc.
An important parameter weighing the quality of deposit film is planeness (U%).Usually can place several wafers in a reaction chamber simultaneously, during reaction, in order to obtain uniform film, a jet thrust be arranged directly over each wafer usually, the jet thrust lower surface is provided with several apertures, can evenly spray reactant gases facing to wafer.Yet the spacing between jet thrust and wafer also has a significant impact the quality of film, if the spacing between the jet thrust of each wafer and its top differs, the film obtained on each wafer will quality differ.In addition, because the area of wafer area and jet thrust is larger, for same wafer, if not parallel between jet thrust and wafer, different sites and the spacing between jet thrust of wafer are also different, cause the film quality on same wafer also not identical.Therefore guarantee that each jet thrust is consistent extremely important with the spacing between wafer.
In prior art, usually before reaction, place the corresponding position of each wafer and place the bead that several tinfoil are kneaded on the heating chassis, then fall container cover, jet thrust is pressed on the tinfoil ball, rise again container cover, measure the thickness that each is pressed into the tinfoil ball of pie, and regulate the position of jet thrust according to this thickness.This method needs repeatedly just can adjust spacing usually, and not only loaded down with trivial details, tolerance range is not high yet, often can cause serious mistake.
Therefore, provide a kind of real necessity that belongs to of semiconductor deposition structure of being convenient to spacing.
The utility model content
The shortcoming of prior art in view of the above, the purpose of this utility model is to provide a kind of semiconductor deposition structure of being convenient to spacing, for the spacing solved between prior art jet thrust and wafer, is difficult to the problem of regulating, tolerance range is low.
Reach for achieving the above object other relevant purposes, the utility model provides a kind of semiconductor deposition structure of being convenient to spacing, the some jet assembly that described semiconductor deposition structure at least comprises the heating chassis, is positioned at the container cover of top, described heating chassis and is connected in described container cover bottom; Described jet assembly comprises the jet thrust that is provided with cavity, be communicated with described cavity and be arranged on described jet thrust lower surface some gas orifices, be communicated with described cavity and be arranged on the air-supply duct of described jet thrust upper surface and evenly be arranged on this jet thrust upper surface for fixing and adjustable for height three web members; Described container cover bottom is fixed at described web member top; Also comprise between described heating chassis and described jet thrust that the spacing calibration with standard thickness is dull and stereotyped.
As a preferred version being convenient to the semiconductor deposition structure of spacing of the present utility model, it is circular that described spacing is calibrated dull and stereotyped cross section.
Further, the dull and stereotyped top of described spacing calibration also is provided with the separator be in contact with it, and the cross-sectional area of described separator is circular.
Further, the cross section on described heating chassis is circular, and the flank on heating chassis is stated in bending Extender Card residence, described separator edge.
Further, described separator middle part is provided with first groove of accommodating described jet thrust, and described the first recess sidewall is vertical or tilt.
As a preferred version being convenient to the semiconductor deposition structure of spacing of the present utility model, top, described heating chassis evenly is provided with six jet assemblies, is equipped with the spacing calibration under described six jet assemblies dull and stereotyped.
Further, described spacing is calibrated dull and stereotyped cross section for circular.
Further, described spacing is calibrated dull and stereotyped middle part and is provided with second groove of accommodating described jet thrust, and described the second recess sidewall is vertical or tilt.
Further, also being provided with cross-sectional area between described jet thrust and described spacing calibration flat board is circular separator.
Further, described separator middle part is provided with the 3rd groove of accommodating described jet thrust, and described the 3rd recess sidewall is vertical or tilt.
As mentioned above, the semiconductor deposition structure of being convenient to spacing of the present utility model, there is following beneficial effect: at first, be conducive to the disposable spacing of adjusting between jet thrust and wafer, while making to react, between each jet thrust and wafer, be parallel to each other, and spacing is consistent, guarantee that the film obtained after reaction has high planeness, uniform quality; The second, can make in advance the spacing calibration flat board of a plurality of different thickness for different thin film deposition processes, select according to demand dull and stereotyped the getting final product of spacing calibration of respective thickness during production; The 3rd, while making the adjustment spacing, operation is simple, not only saves time, and also has pinpoint accuracy.
The accompanying drawing explanation
Fig. 1 is shown as the structural representation of semiconductor deposition structure of the present utility model in embodiment mono-.
Fig. 2 is shown as the vertical view (do not comprise container cover) of semiconductor deposition structure of the present utility model in embodiment mono-.
Fig. 3 is shown as in Fig. 2 regional area shown in the dotted line frame along the skeleton view of arrow direction.
Fig. 4 is shown as the enlarged view of web member in embodiment mono-of semiconductor deposition structure of the present utility model.
Fig. 5 is shown as semiconductor deposition structure of the present utility model local structure schematic diagram when jet thrust is pressed on spacing calibration flat board in embodiment mono-.
Fig. 6 is shown as the local structure schematic diagram of semiconductor deposition structure of the present utility model while in embodiment mono-, comprising separator.
Fig. 7 is shown as the structural representation of semiconductor deposition structure of the present utility model in embodiment bis-.
Fig. 8 be shown as semiconductor deposition structure of the present utility model in embodiment bis-regional area along the longitudinal sectional drawing of the direction of dotted line shown in Fig. 7.
Fig. 9 is shown as local structure schematic diagram when semiconductor deposition structure of the present utility model spacing calibration in embodiment bis-is dull and stereotyped is provided with the second groove.
Figure 10 is shown as semiconductor deposition structure of the present utility model the second recess sidewall local structure schematic diagram when tilting in embodiment bis-.
Local structure schematic diagram when Figure 11 semiconductor deposition structure of the present utility model comprises separator in embodiment bis-.
The local structure schematic diagram of Figure 12 semiconductor deposition structure of the present utility model when separator is provided with the 3rd groove in embodiment bis-.
The element numbers explanation
110 heating chassis
120 container cover
130 jet assemblies
131 jet thrusts
132 air-supply duct
133 web members
1331 union levers
1332 are with pertusate flank
1333 threaded rods
1334 upper nuts
1335 lower nuts
140 spacing calibrations are dull and stereotyped
141 second grooves
150 separators
151 first grooves
152 the 3rd grooves
Embodiment
Below by particular specific embodiment, embodiment of the present utility model is described, person skilled in the art scholar can understand other advantages of the present utility model and effect easily by the disclosed content of this specification sheets.
Refer to Fig. 1 to Figure 12.Notice, appended graphic the illustrated structure of this specification sheets, ratio, size etc., equal contents in order to coordinate specification sheets to disclose only, understand and read for person skilled in the art scholar, not in order to limit the enforceable qualifications of the utility model, therefore the technical essential meaning of tool not, the adjustment of the modification of any structure, the change of proportionlity or size, do not affecting under the effect that the utility model can produce and the purpose that can reach, all should still drop on the technology contents that the utility model discloses and obtain in the scope that can contain.Simultaneously, in this specification sheets, quote as " on ", D score, " left side ", " right side ", " centre " reach the term of " " etc., also only for ease of understanding of narrating, but not in order to limit the enforceable scope of the utility model, the change of its relativeness or adjustment, under without essence change technology contents, when also being considered as the enforceable category of the utility model.
The some jet assembly that the semiconductor deposition structure of being convenient to spacing of the present utility model at least comprises the heating chassis, is positioned at the container cover of top, described heating chassis and is connected in described container cover bottom; Also comprise between described heating chassis and described jet thrust that the spacing calibration with standard thickness is dull and stereotyped.In following examples, the quantity of jet assembly of take describes as six.
Embodiment mono-
As shown in Figures 1 to 6, the utility model provides a kind of semiconductor deposition structure of being convenient to spacing.At first refer to Fig. 1, be shown as the structural representation of semiconductor deposition structure of the present utility model, described semiconductor deposition structure at least comprises heating chassis 110, six jet assemblies 130 that are positioned at the container cover 120 of 110 tops, described heating chassis and evenly are connected in described container cover 120 bottoms; Also comprise the spacing calibration dull and stereotyped 140 with standard thickness between described heating chassis 110 and described jet assembly 130.Concrete, the cross-sectional area of described spacing calibration dull and stereotyped 140 is circular.
Refer to Fig. 2, be shown as semiconductor deposition structure of the present utility model vertical view (not comprising container cover), as shown in the figure, six jet assemblies 130 face the different positions of annulus (spacing calibration dull and stereotyped 140).
Refer to Fig. 3, be shown as the skeleton view of regional area shown in the dotted line frame in Fig. 2 (i.e. a corresponding position in six jet assemblies) along the arrow direction, as shown in the figure, described jet assembly comprises jet thrust 131, is arranged on the air-supply duct 132 of described jet thrust upper surface and evenly is arranged on these jet thrust 132 upper surfaces for fixing and adjustable for height three web members 133; Described container cover 120 bottoms are fixed at described web member top.Concrete, described jet thrust 131 is provided with cavity, and described air-supply duct 132 is communicated with described cavity in order to by the described cavity of gas inject; Described jet thrust 131 lower surfaces are provided with some gas orifices, in order to the gas uniform that will be injected in described cavity by described air-supply duct 132, are sprayed onto wafer surface, the reaction film former.Adjustable being accomplished in several ways of described web member 133 height, in this enforcement, described web member 133 is highly adjustable by the realization that matches of double-screw bolt and nut.
Refer to Fig. 4, be shown as the enlarged view of the web member of semiconductor deposition structure of the present utility model.As shown in the figure, described web member 133 comprises the union lever 1331 that is fixed in described jet thrust 131 upper surfaces, the threaded rod 1333 that is fixed in described container cover 120 lower surfaces, wherein said union lever 1331 tops are provided with is with pertusate flank 1332, described threaded rod 1333 break-through are described is with pertusate flank 1332, on described threaded rod 1333, cover has upper nut 1334 and lower nut 1335, described upper nut 1334 is positioned at the described top with pertusate flank 1332, and described lower nut 1335 is positioned at the described below with pertusate flank 1332.
Before carrying out coating process, at first upper nut 1334 and lower nut 1335 are unscrewed, jet thrust 131 is dropped to spacing calibration dull and stereotyped 140 to be contacted, then tighten upper nut 1334, make the upper surface close contact of jet thrust 131 lower surfaces and spacing calibration dull and stereotyped 140, then tighten lower nut 1335, the position of jet thrust 131 is fixed.Because jet thrust 131 upper surfaces are evenly distributed with three web members 133, according to 3 principles of determining a plane, as long as jet thrust 131 is calibrated dull and stereotyped 140 close contacts with spacing, just can guarantee that jet thrust 131 is parallel to each other with spacing calibration dull and stereotyped 140, spacing is consistent.So far, the spacing adjusted between jet thrust 131 and heating chassis 110 is good, the consistency of thickness of the size of spacing and spacing calibration dull and stereotyped 140.Rise again container cover 120, take out spacing calibration flat board 140, put wafer to be coated, then fall container cover 120.The position of falling due to container cover 120 presets, and is fixed value, and now jet thrust 131 is before consistent with spacing and container cover 120 rises between heating chassis 110, and the thickness for spacing calibration dull and stereotyped 140, now can start coating process.The spacing calibration that can prepare the polylith different thickness is dull and stereotyped, during production, according to the needs of technique, chooses corresponding spacing calibration dull and stereotyped.
Refer to Fig. 5, be shown as semiconductor deposition structure of the present utility model and be pressed on dull and stereotyped local structure schematic diagram when upper of spacing calibration when jet thrust, as shown in the figure, the spacing between jet thrust 131 and heating chassis 110 and spacing are calibrated the consistency of thickness of flat board 140.
In order to reduce frequent use, spacing calibration flat board is caused to wearing and tearing, can also above described spacing calibration dull and stereotyped 140, the separator be in contact with it be set.Concrete, the cross-sectional area of described separator is also circular.Refer to Fig. 6, be shown as the local structure schematic diagram of semiconductor deposition structure of the present utility model while comprising separator, as shown in the figure, described separator 150 is superimposed upon in described spacing calibration dull and stereotyped 140, and described jet thrust 131 is pressed on described separator 150.Jet thrust 131 and the spacing of heating between chassis 110 are spacing calibrating device 140 and separator 150(and jet thrust 131 contact parts) the thickness sum.
As a kind of prioritization scheme of the present utility model, the cross-sectional area on described heating chassis 110 is circular, the edge curvature of described separator 150 extends the flank (as shown in Figure 6) that blocks heating chassis 110, can avoid like this movement of separator 150, contributes to location.Can also first groove 151 of accommodating described jet thrust 131 be set at the middle part of described separator 150.The sidewall of described the first groove 151 can be vertical, also can be formed slopely a guide surface, for guiding jet thrust 131, enters the first groove 151.
It is to be noted, jet thrust 131 and the spacing of heating between chassis 110 are spacing calibrating device 140 and separator 150(and jet thrust 131 contact parts) the thickness sum, for different thin-film techniques, spacing requires different, can prepare the spacing calibration dull and stereotyped 140 of polylith different thickness, and the thickness of separator 150 is constant, during production, according to the needs of technique, chooses the spacing calibration dull and stereotyped 140 of respective thickness and use with separator 150 collocation.
In the semiconductor deposition structure of being convenient to spacing of the present utility model, spacing calibration flat board is an integral body, and consistency of thickness, be conducive to the adjusting of spacing, and accurate rate is high.And the separation criteria flat board that configurable polylith thickness is different, select corresponding spacing calibration dull and stereotyped according to processing requirement during use.Also can coordinate separator jointly to use, can reduce spacing is calibrated to dull and stereotyped wearing and tearing, only need after the separator wearing and tearing to change separator, cost-saved.
Embodiment bis-
Embodiment bis-and embodiment mono-adopt essentially identical technical scheme, and difference is that the spacing of the two calibrates dull and stereotyped structure difference.In embodiment mono-, it is one that described spacing is calibrated dull and stereotyped quantity, as a whole, area is larger, and is circular, six jet thrusts are over against the different positions of annulus, six jet thrusts share a spacing calibration flat board, and in the present embodiment, it is six that described spacing is calibrated dull and stereotyped quantity, each spacing calibration platen area is less, and the corresponding spacing calibration of each jet thrust is dull and stereotyped.
Refer to Fig. 7 to Figure 12, the invention provides a kind of semiconductor deposition structure of being convenient to spacing.At first refer to Fig. 7, be shown as semiconductor deposition structure of the present utility model structural representation in the present embodiment, described semiconductor deposition structure at least comprises heating chassis 110, six jet assemblies 130 that are positioned at the container cover 120 of 110 tops, described heating chassis and evenly are connected in described container cover 120 bottoms; Also comprise the spacing calibration dull and stereotyped 140 with standard thickness between described heating chassis 110 and described jet assembly 130.Concrete, 110 tops, described heating chassis evenly are provided with six jet assemblies 130, are equipped with spacing calibration flat board 140 under described six jet assemblies 130, and the quantity of jet assembly 130 and spacing calibration dull and stereotyped 140 is six.As a preferred version of the present utility model, the cross-sectional area of described spacing calibration dull and stereotyped 140 is circular.
Refer to Fig. 8, be shown as the longitudinal sectional drawing of the regional area (a corresponding position of jet assembly) of semiconductor deposition structure of the present utility model along the direction of dotted line shown in Fig. 7, as shown in the figure, described jet thrust 131 is pressed in spacing calibration dull and stereotyped 140, with the spacing on heating chassis 110 thickness that is spacing calibration dull and stereotyped 140.The control method of spacing refers to the corresponding section of embodiment mono-, repeats no more herein.
As a kind of preferred version of the present utility model, can also second groove 141 of accommodating described jet thrust 131 be set at the middle part of described spacing calibration dull and stereotyped 140.The sidewall of described the second groove 141 can be vertical, also can be formed slopely a guide surface, for guiding jet thrust 131, enters the second groove 141.Refer to Fig. 9 and Figure 10, be shown as the local structure schematic diagram when spacing calibration of semiconductor deposition structure of the present utility model is dull and stereotyped is provided with the second groove.Wherein, described in Fig. 9, the sidewall of the second groove 141 is vertical, the sidewall slope of the second groove 141 described in Figure 10.
In order to reduce frequent use, spacing calibration flat board is caused to wearing and tearing, can also above each spacing calibration dull and stereotyped 140, the separator be in contact with it be set.Concrete, the cross-sectional area of described separator is also circular.Refer to Figure 11, local structure schematic diagram when semiconductor deposition structure of the present utility model comprises separator, as shown in the figure, described separator 150 is superimposed upon in described spacing calibration dull and stereotyped 140, and described jet thrust 131 is pressed on described separator 150.Jet thrust 131 and the spacing of heating between chassis 110 are spacing calibrating device 140 and separator 150(and jet thrust 131 contact parts) the thickness sum.
As a kind of prioritization scheme of the present utility model, the middle part of described separator 150 is provided with the 3rd groove 152 of accommodating described jet thrust 131, the sidewall of described the 3rd groove 152 can be vertical, also can be formed slopely a guide surface for guiding described jet thrust 131 to enter the 3rd groove 152.In addition, the setting of the 3rd groove 152 also can be convenient to picking and placeing of described separator 150.
Dull and stereotyped as a whole with respect to the calibration of the spacing in embodiment mono-, the spacing calibration flat board of the present embodiment is divided into six small portions, and each spacing calibration platen area is less, has on-deformable advantage.
In sum, the semiconductor deposition structure of being convenient to spacing of the present utility model comprises that the spacing calibration is dull and stereotyped, make the adjusting of spacing simple, and tolerance range is high, and the calibration of the spacing of configurable a plurality of different thickness is dull and stereotyped, during use, according to processing requirement, select corresponding spacing calibration dull and stereotyped.Also coordinate separator jointly to use, can reduce spacing is calibrated to dull and stereotyped wearing and tearing, only need after the separator wearing and tearing to change separator, cost-saved.So the utility model has effectively overcome various shortcoming of the prior art and the tool high industrial utilization.
Above-described embodiment is illustrative principle of the present utility model and effect thereof only, but not for limiting the utility model.Any person skilled in the art scholar all can, under spirit of the present utility model and category, be modified or be changed above-described embodiment.Therefore, have in technical field under such as and usually know that the knowledgeable modifies or changes not breaking away from all equivalences that complete under spirit that the utility model discloses and technological thought, must be contained by claim of the present utility model.
Claims (10)
1. a semiconductor deposition structure of being convenient to spacing, is characterized in that: the some jet assembly that described semiconductor deposition structure at least comprises the heating chassis, is positioned at the container cover of top, described heating chassis and is connected in described container cover bottom; Described jet assembly comprises the jet thrust that is provided with cavity, be communicated with described cavity and be arranged on described jet thrust lower surface some gas orifices, be communicated with described cavity and be arranged on the air-supply duct of described jet thrust upper surface and evenly be arranged on this jet thrust upper surface for fixing and adjustable for height three web members; Described container cover bottom is fixed at described web member top; Also comprise between described heating chassis and described jet thrust that the spacing calibration with standard thickness is dull and stereotyped.
2. the semiconductor deposition structure of being convenient to spacing according to claim 1, it is characterized in that: it is circular that described spacing is calibrated dull and stereotyped cross section.
3. the semiconductor deposition structure of being convenient to spacing according to claim 2 is characterized in that: the dull and stereotyped top of described spacing calibration also is provided with the separator be in contact with it, and the cross-sectional area of described separator is circular.
4. the semiconductor deposition structure of being convenient to spacing according to claim 3, it is characterized in that: the cross section on described heating chassis is circular, the flank on heating chassis is stated in bending Extender Card residence, described separator edge.
5. the semiconductor deposition structure of being convenient to spacing according to claim 4 is characterized in that: described separator middle part is provided with first groove of accommodating described jet thrust, and described the first recess sidewall is vertical or tilt.
6. the semiconductor deposition structure of being convenient to spacing according to claim 1, is characterized in that: evenly be provided with six jet assemblies above described heating chassis, be equipped with the spacing calibration under described six jet assemblies dull and stereotyped.
7. the semiconductor deposition structure of being convenient to spacing according to claim 6 is characterized in that: described spacing is calibrated dull and stereotyped cross section for circular.
8. the semiconductor deposition structure of being convenient to spacing according to claim 7, it is characterized in that: described spacing is calibrated dull and stereotyped middle part and is provided with second groove of accommodating described jet thrust, and described the second recess sidewall is vertical or tilt.
9. according to the described semiconductor deposition structure of being convenient to spacing of claim 7 or 8, it is characterized in that: also being provided with cross-sectional area between described jet thrust and described spacing calibration flat board is circular separator.
10. the semiconductor deposition structure of being convenient to spacing according to claim 9 is characterized in that: described separator middle part is provided with the 3rd groove of accommodating described jet thrust, and described the 3rd recess sidewall is vertical or tilt.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220602729 CN202954088U (en) | 2012-11-15 | 2012-11-15 | Semiconductor sedimentation structure having separation distance convenient to regulate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220602729 CN202954088U (en) | 2012-11-15 | 2012-11-15 | Semiconductor sedimentation structure having separation distance convenient to regulate |
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| Publication Number | Publication Date |
|---|---|
| CN202954088U true CN202954088U (en) | 2013-05-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220602729 Expired - Fee Related CN202954088U (en) | 2012-11-15 | 2012-11-15 | Semiconductor sedimentation structure having separation distance convenient to regulate |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022033178A1 (en) * | 2020-08-14 | 2022-02-17 | 长鑫存储技术有限公司 | Semiconductor deposition method and semiconductor deposition system |
-
2012
- 2012-11-15 CN CN 201220602729 patent/CN202954088U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022033178A1 (en) * | 2020-08-14 | 2022-02-17 | 长鑫存储技术有限公司 | Semiconductor deposition method and semiconductor deposition system |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130529 Termination date: 20181115 |