CN202949371U - Insulated gate bipolar transistor water-cooling inversion device - Google Patents
Insulated gate bipolar transistor water-cooling inversion device Download PDFInfo
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- CN202949371U CN202949371U CN 201220674962 CN201220674962U CN202949371U CN 202949371 U CN202949371 U CN 202949371U CN 201220674962 CN201220674962 CN 201220674962 CN 201220674962 U CN201220674962 U CN 201220674962U CN 202949371 U CN202949371 U CN 202949371U
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- plate
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- insulated gate
- gate bipolar
- bipolar transistor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/56—Power conversion systems, e.g. maximum power point trackers
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Abstract
An insulated gate bipolar transistor water-cooling inversion device belongs to the technical field of inverters and is applicable to solar photovoltaic inverters. An insulated gate bipolar transistor water-cooling inversion unit comprises mechanical elements and electrical elements. The mechanical elements comprises a left side plate (1), a right side plate (2), an upper supporting plate (3), a lower supporting plate (4), and a capacitor supporting plate (5). The electrical elements comprises a direct-current contactor (10), a direct-current Hall (11), capacitor pre-charge resistors (15), a pre-charge diode (16), direct-current support capacitors (14), a laminated mother board (6), grading resistors (9), insulated gate bipolar transistors (7), alternating-current Halls (12), and alternating-current fuses (13). The insulated gate bipolar transistors (7) are cooled by a water-cooling board (8) which is made of aluminum alloy materials. The inversion device provided by the utility model is advantaged in that the inversion device is compact in structure, high in cooling efficiency, and free of noise.
Description
Technical field
The utility model belongs to the inverter technology field, and a kind of insulated gate bipolar transistor water-cooled inverter particularly is provided, and it is applicable to solar photovoltaic inverter.
Technical background
Insulated gate bipolar transistor IGBT (Insulated Gate Bipolar Transistor), by the compound full-control type voltage driven type power semiconductor that double pole triode and insulating gate type field effect tube form, have the advantage of low conduction voltage drop two aspects of the high input impedance of MOSFET and GTR concurrently.Be fit to very much to be applied to direct voltage and be the fields such as 600V and above converter system such as alternating current machine, frequency converter, Switching Power Supply, lighting circuit, Traction Drive.
Insulated gate bipolar transistor water-cooled inversion unit, compact conformation, radiating efficiency is high; And the parallel connection by the water-cooled inversion unit has obtained good application on high-power photovoltaic inverter.Insulated gate bipolar transistor water-cooled inversion unit can independently carry out power tracking, and tracking efficient is high; The multiple unit parallel connection can realize the high power contravariant function.
Insulated gate bipolar transistor water-cooled inversion unit is compared with the wind-cooling heat dissipating inversion unit, has that compact conformation, radiating efficiency are high, noiseless characteristics.
Summary of the invention
The purpose of this utility model is to provide a kind of insulated gate bipolar transistor water-cooled inverter, is dc inverter to be become the device of three phase sine alternating current, and it is applicable to solar photovoltaic inverter.
The overall dimension of insulated gate bipolar transistor water-cooled inverter is: 400 mm x254 mm x953mm.
The utility model comprises mechanical support element and electric component.The mechanical support element comprises left plate, right plate, upper backup pad, lower supporting plate, electric capacity supporting bracket.Electric component comprises D.C. contactor, direct current Hall, electric capacity pre-charge resistance, precharge diode, DC support electric capacity, laminated bus bar, grading resistor, insulated gate bipolar transistor, alternating current Hall, alternating-current fuse silk.Insulated gate bipolar transistor dispels the heat by cooled plate, and cooled plate adopts aluminum alloy material.
Upper backup pad, lower supporting plate, electric capacity supporting bracket are clipped between left plate and right plate, on left plate and right plate, fluting are arranged, and upper backup pad, lower supporting plate, electric capacity supporting bracket are inserted in the fluting of left plate and right plate, and are screwed.
The framework that left plate, right plate, upper backup pad, lower supporting plate and electric capacity supporting bracket form rises and supports and fixation, and their material is the 3mm steel plate, and plating zinc on surface is processed.
D.C. contactor, electric capacity pre-charge resistance, insulator are installed on upper backup pad, copper bar is housed on insulator; Cooled plate, alternating current Hall are housed on lower supporting plate; Fixed insulation grid bipolar transistor on cooled plate; Insulator also is housed, fixedly alternating-current fuse silk and conducting copper on insulator on lower supporting plate.Fix 6 DC support electric capacity on the electric capacity supporting bracket, 6 DC support electric capacity connect with laminated bus bar, and 2 grading resistors are arranged between the both positive and negative polarity of every DC support electric capacity.D.C. contactor is connected with laminated bus bar by direct current copper bar, and the direct current Hall is housed on direct current copper bar.Laminated bus bar is connected with insulated gate bipolar transistor by bolt; Insulated gate bipolar transistor connects and is connected with the alternating-current fuse silk by copper bar, and AC copper-line passes the alternating current Hall.
The circuit diagram of insulated gate bipolar transistor water-cooled inverter, as shown in Figure 4: each electric component all uses copper bar to be connected with laminated bus bar, and the material of copper bar is brass, electroplating surfaces with tin.Laminated bus bar is to stack with two-layer copper coin, and in the middle of two-layer copper coin, outer surface has insulating barrier, the laminated bus bar stray inductance is little, is conducive to the work of insulated gate bipolar transistor.
The utility model has the advantage of, compact conformation, radiating efficiency is high, noiselessness.
Description of drawings
Fig. 1 is 3 dimensional drawing of the present utility model.Wherein, left plate 1, right plate 2, upper backup pad 3, lower supporting plate 4, laminated bus bar 6, insulated gate bipolar transistor 7, cooled plate 8, grading resistor 9, D.C. contactor 10, direct current Hall 11, alternating current Hall 12, alternating-current fuse silk 13, electric capacity pre-charge resistance 15, precharge diode 16.
Fig. 2 is front view of the present utility model.
Fig. 3 is vertical view of the present utility model.Wherein, electric capacity supporting bracket 5, DC support electric capacity 14.
Fig. 4 is circuit diagram of the present utility model.
Embodiment
In order more specifically to describe the utility model, below in conjunction with drawings and Examples, the technical solution of the utility model and relative theory thereof are elaborated.
As Fig. 1, Fig. 2, shown in Figure 3, described insulated gate bipolar transistor water-cooled inversion unit forms mechanical framework by left plate 1, right plate 2, upper backup pad 3, lower supporting plate 4, electric capacity supporting bracket 5, and material is the 3mm steel plate, and plating zinc on surface is processed.Upper backup pad 3, lower supporting plate 4, electric capacity supporting bracket 5 are clipped in the middle of left plate 1 and right plate 2, fix with bolt.D.C. contactor 10, electric capacity pre-charge resistance 15 are installed on upper backup pad.
Described insulated gate bipolar transistor water-cooled inversion unit is installed cooled plate 8, alternating current Hall 12, alternating-current fuse silk 13 on lower supporting plate; Installing insulating grid bipolar transistor 7 on cooled plate; Fuse 13 is connected by copper bar with insulated gate bipolar transistor 7, and copper bar passes alternating current Hall 12; The copper bar material is brass, and electroplating surfaces with tin is processed.
Described insulated gate bipolar transistor water-cooled inversion unit, fixing DC support electric capacity 14 on electric capacity supporting bracket 5; 6 DC support electric capacity 14 use laminated bus bars 6 connect; 2 grading resistors 9 in parallel on each DC support electric capacity 14.
Described insulated gate bipolar transistor water-cooled inversion unit, laminated bus bar 6 directly is bolted to connection with insulated gate bipolar transistor 7; Laminated bus bar 6 is connected by copper bar with D.C. contactor 10, and direct current Hall 10 and precharge diode 16 are installed on copper bar.
The circuit of described insulated gate bipolar transistor water-cooled inversion unit as shown in Figure 4.All electric components directly connect employing copper bar and laminated bus bar, and satisfy minimum electrical spacing.
Claims (4)
1. an insulated gate bipolar transistor water-cooled inverter, is characterized in that, comprises mechanical organ and electric component; Mechanical organ comprises left plate (1), right plate (2), upper backup pad (3), lower supporting plate (4), electric capacity supporting bracket (5); Electric component comprises D.C. contactor (10), direct current Hall (11), electric capacity pre-charge resistance (15), precharge diode (16), DC support electric capacity (14), laminated bus bar (6), grading resistor (9), insulated gate bipolar transistor (7), alternating current Hall (12), alternating-current fuse silk (13);
Upper backup pad (3), lower supporting plate (4), electric capacity supporting bracket (5) are clipped between left plate (1) and right plate (2), on left plate (1) and right plate (2), fluting is arranged, upper backup pad (3), lower supporting plate (4), electric capacity supporting bracket (5) are inserted in the fluting of left plate (1) and right plate (2), and are screwed;
D.C. contactor (10), electric capacity pre-charge resistance (15), insulator are installed on upper backup pad (3), copper bar is housed on insulator; Cooled plate (8), alternating current Hall (12) are housed on lower supporting plate (4); Fixed insulation grid bipolar transistor (7) on cooled plate; Lower supporting plate also is equipped with insulator on (4), fixedly alternating-current fuse silk (13) and conducting copper on insulator; Fix 6 DC support electric capacity, 6 DC support electric capacity on electric capacity supporting bracket (5) with laminated bus bar (6) connection, 2 grading resistors are arranged between the both positive and negative polarity of every DC support electric capacity; D.C. contactor is connected with laminated bus bar by direct current copper bar, and direct current Hall (11) is housed on direct current copper bar; Laminated bus bar is connected with insulated gate bipolar transistor (7) by bolt; Insulated gate bipolar transistor (7) is connected with alternating-current fuse silk (13) by copper bar, and AC copper-line passes alternating current Hall (12).
2. device according to claim 1, is characterized in that, cooled plate (8) adopts aluminum alloy material.
3. device according to claim 1, is characterized in that, forms mechanical framework by left plate (1), right plate (2), upper backup pad (3), lower supporting plate (4), electric capacity supporting bracket (5), and material is the 3mm steel plate, and plating zinc on surface is processed.
4. device according to claim 1, is characterized in that, it is characterized in that, the overall dimension of insulated gate bipolar transistor water-cooled inverter is: 400mm x254mm x953mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220674962 CN202949371U (en) | 2012-12-09 | 2012-12-09 | Insulated gate bipolar transistor water-cooling inversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220674962 CN202949371U (en) | 2012-12-09 | 2012-12-09 | Insulated gate bipolar transistor water-cooling inversion device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202949371U true CN202949371U (en) | 2013-05-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220674962 Expired - Fee Related CN202949371U (en) | 2012-12-09 | 2012-12-09 | Insulated gate bipolar transistor water-cooling inversion device |
Country Status (1)
| Country | Link |
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| CN (1) | CN202949371U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105186889A (en) * | 2015-08-21 | 2015-12-23 | 永济新时速电机电器有限责任公司 | Combination water cooling power apparatus with overvoltage absorption function |
| CN109687724A (en) * | 2019-01-01 | 2019-04-26 | 武汉船用电力推进装置研究所（中国船舶重工集团公司第七一二研究所） | A kind of water-cooling electric electron power module |
| EP3651336A1 (en) * | 2018-11-08 | 2020-05-13 | Siemens Aktiengesellschaft | Direct current switch |
-
2012
- 2012-12-09 CN CN 201220674962 patent/CN202949371U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105186889A (en) * | 2015-08-21 | 2015-12-23 | 永济新时速电机电器有限责任公司 | Combination water cooling power apparatus with overvoltage absorption function |
| EP3651336A1 (en) * | 2018-11-08 | 2020-05-13 | Siemens Aktiengesellschaft | Direct current switch |
| WO2020094435A1 (en) * | 2018-11-08 | 2020-05-14 | Siemens Aktiengesellschaft | Direct current switch |
| CN112970184A (en) * | 2018-11-08 | 2021-06-15 | 西门子股份公司 | DC switch |
| CN109687724A (en) * | 2019-01-01 | 2019-04-26 | 武汉船用电力推进装置研究所（中国船舶重工集团公司第七一二研究所） | A kind of water-cooling electric electron power module |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: YUNNAN JINZI GREEN POWER TECHNOLOGY CO., LTD. Effective date: 20131218 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20131218 Address after: 100070 No. 72 South Fourth Ring Road, Beijing, Fengtai District Patentee after: Research & Design Inst. of Metallurgical Automation Patentee after: Yunnan Jinzi Green Power Technology Co.,Ltd. Address before: 100070 No. 72 South Fourth Ring Road, Beijing, Fengtai District Patentee before: Research & Design Inst. of Metallurgical Automation |
|
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130522 Termination date: 20131209 |