CN202941030U - Integrated semiconductor electromagnetic cathode electric light - Google Patents
Integrated semiconductor electromagnetic cathode electric light Download PDFInfo
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- CN202941030U CN202941030U CN 201220596456 CN201220596456U CN202941030U CN 202941030 U CN202941030 U CN 202941030U CN 201220596456 CN201220596456 CN 201220596456 CN 201220596456 U CN201220596456 U CN 201220596456U CN 202941030 U CN202941030 U CN 202941030U
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- diode
- electric capacity
- rectifier bridge
- capacitor
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Abstract
The utility model provides an integrated semiconductor electromagnetic cathode electric light. According to the utility model, on the basis of a traditional normal power factor (NPF) power supply rectifying circuit, an original filtering electrolytic capacitor C0 is removed, i.e., the source of NPF is eradicated, and the original filtering electrolytic capacitor C0 is replaced by a bidirectional symmetrical composite filter circuit composed of a first diode D1, a second diode D2, a third diode D3, a fourth diode D4, a fifth diode D5, a sixth diode D6, a third capacitor C3, a fourth capacitor C4, a fifth electrolytic capacitor C5 and a sixth electrolytic capacitor C6 so as to realize high power factor input; the total current harmonic amount THD and each component of the filter circuit are small, so the filter circuit is applicable to a product with single power of more than 26 W and suitable for simultaneous usage by a great number of lights in close neighborhood.
Description
Technical field
The utility model relates to the velocitron field, is specifically related to a kind of integrated semiconductor electromagnetism cathode electronics lamp.
Background technology
Integrated semiconductor electromagnetism cathode electronics light fixture has energy-efficient (light efficiency is more than 100Lm/W), the advantages such as long-life (available more than 30000 hours), a kind of economize on electricity product that has wide application prospects. still, conventional integrated cold cathode velocitron, owing to adopting low power factor (NPF) rectification circuit, be namely by a rectifier bridge D after the power supply input
0Add again an electrolytic capacitor C
0Filtering.In Fig. 1, Vaci is ac input end, and FU is fuse, D
0Be rectifier bridge, C
0Be electrolytic capacitor, ZP is oscillator, and Lamp is semiconductor electromagnetism cathode modulation pipe, and T is transformer.Rectifier bridge D
0, being used for the alternating voltage of input is carried out rectification, the voltage after rectification is through electrolytic capacitor C
0Carry out converting direct voltage output to oscillator ZP after flat ripple, oscillator ZP, for generation of oscillating voltage, the oscillating voltage output of oscillator ZP is connected with the first input end of transformer T, and transformer T, be used for oscillating voltage is changed rear drive Lamp.Rectifier bridge D
0Ac input end also be connected with fuse FU.The second input of described transformer T is by the first capacitor C
1With electrolytic capacitor C
0Positive terminal connect, the second input of transformer T is by the 3rd capacitor C
2With electrolytic capacitor C
0Negative pole end connect.
The advantage of sort circuit is simple in structure, and cost is lower. but simultaneously, due to the reason of NPF circuit theory, its power factor low (PF is 0.5-0.7), current harmonics total amount THD and 3,5,7,9 grades are until 39 component of degree n ns are all higher, generally all greater than IEC, the security value (s) of the international and domestic related standards defined such as GB, it can cause certain interference to electrical network, cause the mains supply quality to descend. as a large amount of uses, can cause the electrical network center line charged when serious.Sort circuit is only suitable for the small light of single power below 25W and uses, be not suitable for single power greater than the product of 26W and closely the lamp of a greater number use simultaneously.
The content of utility model
In order to solve one or more in the problem that prior art exists, the utility model provides integrated semiconductor electromagnetism cathode electronics lamp, adopt fairly simple way to reach integrated semiconductor electromagnetism cathode electronics light fixture and be input as High Power Factor, and its current harmonics total amount THD and each component of degree n n thereof are all smaller, thus can adapt to single power greater than the product of 26W and closely the lamp of a greater number use simultaneously.
Concrete solution is:
A kind of integrated semiconductor electromagnetism cathode electronics lamp comprises rectifier bridge D
0, the 5th diode D
5, the first electrochemical capacitor C
5, the second electrochemical capacitor C
6, the 6th diode D
6, wherein,
The 5th diode D
5With the second electrochemical capacitor C
6Series connection, the 5th electrochemical capacitor C
5With the 6th diode D
6Series connection, two series circuits are in parallel again, form parallel circuits, rectifier bridge D
0The first end of output and the 5th diode D
5Anode be connected, with the first electrochemical capacitor C
5Positive terminal be connected, rectifier bridge D
0The second end of output and the second electrochemical capacitor C
6Negative pole end be connected, with the 6th diode D
6Anode be connected;
Rectifier bridge D
0The alternating voltage of input is carried out rectification, and the voltage after rectification is by the 5th diode D
5, the first electrochemical capacitor C
5, the second electrochemical capacitor C
6, the 6th diode D
6The parallel circuits that forms converts direct voltage output to oscillator ZP,
Oscillator ZP, for generation of oscillating voltage, the oscillating voltage output of oscillator ZP is connected with the first input end of transformer T, and
Transformer T, the first output of transformer is changed rear drive semiconductor electromagnetism cathode modulation pipe Lamp with oscillating voltage.
Preferably, also comprise the 3rd capacitor C
3With the 4th capacitor C
4, rectifier bridge D
0, the 3rd capacitor C
3, the 4th capacitor C
4Series connection, electric capacity all has first end and the second end, rectifier bridge D
0First end and the 3rd capacitor C
3First end be connected, the 3rd capacitor C
3The second end and the 4th capacitor C
4First end be connected, the 4th capacitor C
4The second end and rectifier bridge D
0The second end be connected.
Preferably, the first input end of described oscillator ZP is by the first diode D
1With rectifier bridge D
0The first end of output is connected, and the second input of described oscillator ZP is by the second diode D
2With rectifier bridge D
0The second end of output is connected.
Preferably, the second input of described transformer T is by the first capacitor C
1Be connected with an end of described parallel circuits, the second input of transformer T is by the second capacitor C
2Be connected with the other end of described parallel circuits.
Preferably, the second input of described transformer T and the 3rd capacitor C
3The second end connect, with the 4th capacitor C
4First end connect.
Preferably, also comprise the 3rd diode D
3With the 4th diode D
4, the 3rd diode D
3Anode and the 3rd capacitor C
3The second end connect, the 3rd diode D
3Negative electrode and the 5th diode D
5Anode, the 4th diode D
4Negative electrode and the 4th capacitor C
4First end connect, the 4th diode D
4Anode and the 6th diode D
6Negative electrode be connected.
Preferably, described rectifier bridge D
0Ac input end also be connected with fuse FU.
The technique effect that the utility model provides integrated semiconductor electromagnetism cathode electronics lamp to produce has: adopt fairly simple way to reach integrated semiconductor electromagnetism cathode electronics light fixture and be input as High Power Factor, and its current harmonics total amount THD and each component of degree n n thereof are all smaller, thus can adapt to single power greater than the product of 26W and closely the lamp of a greater number use simultaneously.
Description of drawings
Fig. 1 is the circuit diagram of a kind of integrated semiconductor electromagnetism cathode electronics lamp of prior art;
Fig. 2 is the circuit diagram of the integrated semiconductor electromagnetism cathode electronics lamp that provides of the utility model.
Embodiment
The present invention is described in further detail below in conjunction with accompanying drawing.
As shown in Figure 2, a kind of integrated semiconductor electromagnetism cathode electronics lamp comprises rectifier bridge D
0, the 5th diode D
5, the first electrochemical capacitor C
5, the second electrochemical capacitor C
6, the 6th diode D
6, wherein,
The 5th diode D
5With the second electrochemical capacitor C
6Series connection, the first electrochemical capacitor C
5With the 6th diode D
6Series connection, two series circuits are in parallel again, form parallel circuits, rectifier bridge D
0The first end of output and the 5th diode D
5Anode be connected, with the first electrochemical capacitor C
5Positive terminal be connected, rectifier bridge D
0The second end of output and the second electrochemical capacitor C
6Negative pole end be connected, with the 6th diode D
6Anode be connected;
Rectifier bridge D
0The alternating voltage of input is carried out rectification, and the voltage after rectification is by the 5th diode D
5, the first electrochemical capacitor C
5, the second electrochemical capacitor C
6, the 6th diode D
6The parallel circuits that forms converts direct voltage output to oscillator ZP,
Oscillator ZP, for generation of oscillating voltage, the oscillating voltage output of oscillator ZP is connected with the first input end of transformer T, and
Transformer T, the first output of transformer is changed rear drive semiconductor electromagnetism cathode modulation pipe Lamp with oscillating voltage.
Preferably, also comprise the 3rd capacitor C
3With the 4th capacitor C
4, rectifier bridge D
0, the 3rd capacitor C
3, the 4th capacitor C
4Series connection, electric capacity all has first end and the second end, rectifier bridge D
0First end and the 3rd capacitor C
3First end be connected, the 3rd capacitor C
3The second end and the 4th capacitor C
4First end be connected, the 4th capacitor C
4The second end and rectifier bridge D
0The second end be connected.
Preferably, the first input end of described oscillator ZP is by the first diode D
1With rectifier bridge D
0The first end of output is connected, and the second input of described oscillator ZP is by the second diode D
2With rectifier bridge D
0The second end of output is connected.
Preferably, the second input of described transformer T is by the first capacitor C
1Be connected with an end of described parallel circuits, the second input of transformer T is by the second capacitor C
2Be connected with the other end of described parallel circuits.
Preferably, the second input of described transformer T and the 3rd capacitor C
3The second end connect, with the 4th capacitor C
4First end connect.
Preferably, also comprise the 3rd diode D
3With the 4th diode D
4, the 3rd diode D
3Anode and the 3rd capacitor C
3The second end connect, the 3rd diode D
3Negative electrode and the 5th diode D
5Anode, the 4th diode D
4Negative electrode and the 4th capacitor C
4First end connect, the 4th diode D
4Anode and the 6th diode D
6Negative electrode be connected.
Preferably, described rectifier bridge D
0Ac input end also be connected with fuse FU.
By on the basis of traditional NPF power rectifier circuit, remove former electrolytic capacitor filter C
0, namely remove the root that causes NPF, replace the first diode D
1, the second diode D
2, the 3rd diode D
3, the 4th diode D
4, the 5th diode D
5, the 6th diode D
6With the 3rd capacitor C
3, the 4th capacitor C
4And the 5th electrochemical capacitor C
5, the 6th electrochemical capacitor C
6The bi-directional symmetrical compound filter circuit that forms realizes being input as High Power Factor (HPF input, PF is greater than 0.95), and its current harmonics total amount THD and each component of degree n n thereof smaller (3 of THD all, 5,7,9,11, until 39 component of degree n ns are respectively less than percent 30PF, 10,7,5,3, namely less than the limit value of IEC and GB).
The groundwork principle of bi-directional symmetrical compound filter circuit is: ac input end Vaci input current is after rectifier D0, by oscillator ZP output square wave, after boosting by transformer T, major part supplied with semiconductor electromagnetism cathode modulation pipe Lamp (via inductance, capacitance energy storage, discharge and recharge, supply with fluorescent tube near sinusoidal ripple), and another part high-frequency current and power, be divided into several roads, wherein lead up to the 3rd capacitor C
3, the 4th capacitor C
4Be fed back into rectifier bridge Do, and the first diode D
1, the second diode D
2The Partial Power at place is through the first diode D
1With the second diode D
1Rectification again, electric current with the rectification of former rectifier bridge Do institute, supply with together oscillator ZP as the main work energy, another fraction high-frequency current, when electric current is in low level (50-60HZ), feed back to power supply, namely the electric current cutout when former NPF state, voltage are low is regional, consist of afterflow, make originally because of little expansion of the NPF state current angle of flow, electric current presents more consistent with input voltage waveform, i.e. the continuous state of the connection of near sinusoidal shape. and High Power Factor HPF state namely appears, nature, THD and each component of degree n n thereof also all synchronously diminish.In Fig. 2, several diode D in addition
3, D
4, D
5, D
6With electrochemical capacitor C
5, C
6Main body for the compound filter power supply, in order to making 100HZ (China or other 220-240V50HZ civil power) after AC rectification, or 120HZ 100-127V such as (, 60HZ power supply) North Americas dc pulse filtering, also feedback has a small amount of radio-frequency component simultaneously, compares Cfi. to improve the lamp current crest
Calculate and test by theory, according to the various electrical quantitys of lamp, repeatedly arrange, adjust relevant component parameter, can change PF, the numerical value of THD and each component of degree n n thereof, and obtain comparatively ideal suitable parameter.The scheme that provides by the utility model, take the integrated semiconductor electromagnetism cathode electronics lamp of 220V36W as example, its input parameter PF has reached 3,5 of 0.98, THD, 7,9, directly cause 39 components all less than percent 30PF, 10,7,5,3, all reach the qualified product requirement of high-power lamp.Existing this series products, existing power 20W, 24W, 28W, 32W, 36W, the single tube product of 48W etc. also can be made the split type more high-power product with one or more straight tube.
The utility model provides integrated semiconductor electromagnetism cathode electronics lamp, adopt fairly simple way to reach integrated semiconductor electromagnetism cathode electronics light fixture and be input as High Power Factor, and its current harmonics total amount THD and each component of degree n n thereof are all smaller, thus can adapt to single power greater than the product of 26W and closely the lamp of a greater number use simultaneously.
Claims (7)
1. an integrated semiconductor electromagnetism cathode electronics lamp, is characterized in that, comprises rectifier bridge (D
0), the 5th diode (D
5), the first electrochemical capacitor (C
5), the second electrochemical capacitor (C
6), the 6th diode (D
6), wherein,
The 5th diode (D
5) and the second electrochemical capacitor (C
6) series connection, the first electrochemical capacitor (C
5) and the 6th diode (D
6) series connection, two series circuits are in parallel again, form parallel circuits, rectifier bridge (D
0) first end and the 5th diode (D of output
5) negative electrode be connected, with the first electrochemical capacitor (C
5) positive terminal be connected, rectifier bridge (D
0) the second end and the second electrochemical capacitor (C of output
6) negative pole end be connected, with the 6th diode (D
6) anode be connected;
Rectifier bridge (D
0) alternating voltage of input is carried out rectification, the voltage after rectification is by the 5th diode (D
5), the first electrochemical capacitor (C
5), the second electrochemical capacitor (C
6), the 6th diode (D
6) parallel circuits that forms converts direct voltage output to oscillator (ZP),
Oscillator (ZP), for generation of oscillating voltage, the oscillating voltage output of oscillator (ZP) is connected with the first input end of transformer (T), and
Transformer (T), the first output of transformer is changed rear drive semiconductor electromagnetism cathode modulation pipe (Lamp) with oscillating voltage.
2. a kind of integrated semiconductor electromagnetism cathode electronics lamp according to claim 1, is characterized in that, also comprises the 3rd electric capacity (C
3) and the 4th electric capacity (C
4), rectifier bridge (D
0), the 3rd electric capacity (C
3), the 4th electric capacity (C
4) series connection, electric capacity all has first end and the second end, rectifier bridge (D
0) first end and the 3rd electric capacity (C
3) first end be connected, the 3rd electric capacity (C
3) the second end and the 4th electric capacity (C
4) first end be connected, the 4th electric capacity (C
4) the second end and rectifier bridge (D
0) the second end be connected.
3. a kind of integrated semiconductor electromagnetism cathode electronics lamp according to claim 1, is characterized in that, the first input end of described oscillator (ZP) is by the first diode (D
1) and rectifier bridge (D
0) first end of output is connected, the second input of described oscillator (ZP) is by the second diode (D
2) and rectifier bridge (D
0) the second end of output is connected.
4. a kind of integrated semiconductor electromagnetism cathode electronics lamp according to claim 3, is characterized in that, the second input of described transformer (T) is by the first electric capacity (C
1) be connected with an end of described parallel circuits, the second input of transformer (T) is by the second electric capacity (C
2) be connected with the other end of described parallel circuits.
5. a kind of integrated semiconductor electromagnetism cathode electronics lamp according to claim 4, is characterized in that the second input of described transformer (T) and the 3rd electric capacity (C
3) the second end connect, with the 4th electric capacity (C
4) first end connect.
6. a kind of integrated semiconductor electromagnetism cathode electronics lamp according to claim 5, is characterized in that, also comprises the 3rd diode (D
3) and the 4th diode (D
4), the 3rd diode (D
3) anode and the 3rd electric capacity (C
3) the second end connect, the 3rd diode (D
3) negative electrode and the 5th diode (D
5) anode, the 4th diode (D
4) negative electrode and the 4th electric capacity (C
4) first end connect, the 4th diode (D
4) anode and the 6th diode (D
6) negative electrode be connected.
7. a kind of integrated semiconductor electromagnetism cathode electronics lamp according to claim 6, is characterized in that described rectifier bridge (D
0) ac input end also be connected with fuse (FU).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220596456 CN202941030U (en) | 2012-11-13 | 2012-11-13 | Integrated semiconductor electromagnetic cathode electric light |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220596456 CN202941030U (en) | 2012-11-13 | 2012-11-13 | Integrated semiconductor electromagnetic cathode electric light |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202941030U true CN202941030U (en) | 2013-05-15 |
Family
ID=48325249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220596456 Expired - Lifetime CN202941030U (en) | 2012-11-13 | 2012-11-13 | Integrated semiconductor electromagnetic cathode electric light |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202941030U (en) |
-
2012
- 2012-11-13 CN CN 201220596456 patent/CN202941030U/en not_active Expired - Lifetime
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 430000 Wuhan Donghu High-tech Park, Wuhan, Hubei Province Patentee after: Optical energy technology Co.,Ltd. Address before: 430000 Wuhan Donghu High-tech Park, Wuhan, Hubei Province Patentee before: WUHAN HEGUANG LIGHTING SCIENCE & TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20190611 Address after: 18th Floor, Golden Bell Hui Center, 28 Queen's Avenue East, Wanchai, Hong Kong, China Patentee after: Yundeng Industry (Hong Kong) Co.,Ltd. Address before: 430000 Wuhan Donghu High-tech Park, Wuhan, Hubei Province Patentee before: Optical energy technology Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191022 Address after: No. 524-4-278, floor 5, building B, Yunnan Software Park (industrial R & D base of high tech Zone), No. 220, Erhuan West Road, high tech Zone, Kunming City, Yunnan Province Patentee after: Yundeng photoelectric (Kunming) Co.,Ltd. Address before: 18 / F, Admiralty centre, 28 Queen's Road East, Wanchai, Hong Kong, China Patentee before: Yundeng Industry (Hong Kong) Co.,Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130515 |