CN202936509U - Continuous-feeding silicon single crystal furnace - Google Patents
Continuous-feeding silicon single crystal furnace Download PDFInfo
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- CN202936509U CN202936509U CN 201220637399 CN201220637399U CN202936509U CN 202936509 U CN202936509 U CN 202936509U CN 201220637399 CN201220637399 CN 201220637399 CN 201220637399 U CN201220637399 U CN 201220637399U CN 202936509 U CN202936509 U CN 202936509U
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Abstract
The utility model relates to a continuous-feeding silicon single crystal furnace. The silicon single crystal furnace comprises a lifting device, a feeding device, a quartz crucible, a graphite crucible and a graphite heater, wherein the quartz crucible is divided into an inner crucible and an outer crucible, the bottoms of the inner crucible and the outer crucible are connected and provided with communicated holes, and a feeding gap is formed between the inner crucible and the outer crucible; a weighing sensor and a camera which used is for monitoring growth of a crystal bar are arranged on the lifting device; and materials are fed by the feeding device through a feeding hopper, and a feeding port is formed between the inner crucible and the outer crucible. According to the continuous-feeding silicon single crystal furnace, the quartz crucible is divided into an inner layer and an outer layer, and the feeding is carried out between the inner crucible and the outer crucible by the feeding device, so that the influence on the growth of the crystal bar can be effectively prevented when the raw materials are fed, the integral concentration of produced crystals is guaranteed, and the production cost of the crystal bar with a specific concentration is lowered.
Description
Technical field
The utility model relates to a kind of continuous charging silicon single crystal.
Background technology
Silicon single-crystal is widely used in semi-conductor and photovoltaic industry.The Production Flow Chart of silicon single crystal bar is as follows: the quartz crucible that will fill the silicon raw material is placed in the silicon single-crystal pullup growth furnace; Growth furnace vacuumizes, and is heated to the thawing of silicon raw material; At suitable temperature, with seed crystal from top slowly near melt liquid level, and be in contact with it; Seed crystal draws on gradually by processing requirement.By controlling seed crystal pulling rate and temperature, crystal bar is pulled out from liquid level gradually.
In the silicon single-crystal production process, generally can add a certain amount of other element in the silicon raw material, be called doping, these elements can be boron, phosphorus or antimony etc.Different doped elements has the specific segregation coefficient of oneself.So-called segregation coefficient is exactly, doped element can be in melt whole uniform dissolution, form certain concentration.But doped element is not to enter crystal by this concentration in the crystal structure process, but part concentration enters.The concentration ρ S of doped element in solid and the concentration ρ L ratio in melt be both segregation coefficient K:
K=ρS/ρL
Generally, this coefficient is steady state value.Show if in melt, doping content is high, the doping content in crystal is relatively just high in proportion.Otherwise, just low.
If the segregation coefficient of certain element is very low, so in crystal when beginning growth, when the melt solidifying of a part of volume, the doped element in this part volume only has very small portion (concentration is very low), and major part is stayed in remainder melt.Along with crystal constantly solidifies, the concentration in remainder melt will improve constantly.In crystal, doping content also can correspondingly improve (segregation coefficient K works) simultaneously.The crystal of after coagulation is higher than the doping content in the crystal that had before solidified like this.
General silicon single crystal bar is a long excellent type.Crystal bar concentration anterior and afterbody has very big difference like this.For the lower doped element of segregation coefficient, as phosphorus or antimony, the concentration difference before and after crystal bar will substantially exceed the concentration error of permission, therefore have to crystal bar is cut into several sections in actual production, sell by the different concns requirement.And single client often only needs a kind of crystal bar of concentration, for the crystal bar of production specific concentrations, also must produce the crystal bar of other concentration like this, causes production cost greatly very high.
The utility model content
The purpose of this utility model is to propose a kind of continuous charging silicon single crystal, has solved the inconsistent problem of crystal bar overall density of monocrystal stove growth.
For reaching this purpose, the utility model by the following technical solutions:
A kind of continuous charging silicon single crystal, comprise pulling apparatus, feeding device, quartz crucible, plumbago crucible, graphite heater, described quartz crucible is divided into interior crucible and outer crucible, and inside and outside crucible bottom is connected and a hole that communicates is arranged, and leaves reinforced space between described inside and outside crucible.
Preferably, be provided with the camera of LOAD CELLS and monitoring boule growth on described pulling apparatus.
Preferably, described feeding device feeds in raw material by loading hopper, and described charging opening is placed between inside and outside crucible.
The utility model is inside and outside two-layer by quartz crucible is arranged to, feeding device feeds in raw material between interior outer crucible, can prevent effectively that raw material from adding fashionable impact on boule growth, simultaneously inside and outside crucible bottom has the hole of UNICOM, crucible in slowly flowing into after the raw material that newly adds melts evenly in outer crucible has been avoided the crystal affects on the growth; Be provided with LOAD CELLS on pulling apparatus, monitoring boule growth weight, be provided with camera, the monitoring boule length changes, after obtaining weight and length variations parameter, calculate remainder melt concentration increased value, calculate in real time the silicon raw material weight of the required interpolation of weaker concn, then add the pure silicon feedstock of certainweight by the mode of continuous charging, dilute the doping content in remainder melt, make the concentration value in remainder melt constant all the time, guaranteed to produce the overall density of crystal, reduced the production cost of specific concentrations crystal bar.
Description of drawings
Fig. 1 is the utility model one-piece construction schematic diagram.
In figure:
1, crystal bar; 2, interior crucible; 3, outer crucible; 4, feeding device; 5, plumbago crucible; 6, graphite heater; 7, lagging material; 8, loading hopper; 9, pulling apparatus.
Embodiment
Further illustrate the technical solution of the utility model below in conjunction with accompanying drawing and by embodiment.
As shown in Figure 1, be that the utility model is specifically implemented structural representation, in figure:
crystal bar 1 is placed in single crystal growing furnace, crystal bar 1 upper end is connected with pulling apparatus 9, be provided with quartz crucible and plumbago crucible 5 in body of heater, quartz crucible adopts two crucible settings, comprise interior crucible 2 and its outside outer crucible 3, leave reinforced space between interior outer crucible, inside and outside crucible bottom links together, and be provided with the hole of UNICOM in the bottom, plumbago crucible 5 outer setting have graphite heater 6, the well heater outer wrap has lagging material 7, single crystal growing furnace is outside equipped with feeding device 4, feeding device feeds in raw material by loading hopper 8, the charging opening of loading hopper 8 is placed between interior outer crucible.
Be provided with the camera of LOAD CELLS and monitoring boule growth on described pulling apparatus 9.
The utility model is inside and outside two-layer by quartz crucible is arranged to, feeding device feeds in raw material between interior outer crucible, can prevent effectively that raw material from adding fashionable impact on boule growth, simultaneously inside and outside crucible bottom has the hole of UNICOM, crucible in slowly flowing into after the raw material that newly adds melts evenly in outer crucible has been avoided the crystal affects on the growth; Be provided with LOAD CELLS on pulling apparatus, monitoring boule growth weight, be provided with camera, the monitoring boule length changes, after obtaining weight and length variations parameter, calculate remainder melt concentration increased value, calculate in real time the silicon raw material weight of the required interpolation of weaker concn, then add the pure silicon feedstock of certainweight by the mode of continuous charging, dilute the doping content in remainder melt, make the concentration value in remainder melt constant all the time, guaranteed to produce the overall density of crystal.
Claims (3)
1. continuous charging silicon single crystal, comprise pulling apparatus, feeding device, quartz crucible, plumbago crucible, graphite heater, it is characterized in that: described quartz crucible is divided into interior crucible and outer crucible, inside and outside crucible bottom is connected and a hole that communicates is arranged, and leaves reinforced space between described inside and outside crucible.
2. a kind of continuous charging silicon single crystal according to claim 1, is characterized in that: the camera that is provided with LOAD CELLS and monitoring boule growth on described pulling apparatus.
3. a kind of continuous charging silicon single crystal according to claim 1, it is characterized in that: described feeding device feeds in raw material by loading hopper, and described charging opening is placed between inside and outside crucible.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220637399 CN202936509U (en) | 2012-11-27 | 2012-11-27 | Continuous-feeding silicon single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220637399 CN202936509U (en) | 2012-11-27 | 2012-11-27 | Continuous-feeding silicon single crystal furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202936509U true CN202936509U (en) | 2013-05-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220637399 Expired - Fee Related CN202936509U (en) | 2012-11-27 | 2012-11-27 | Continuous-feeding silicon single crystal furnace |
Country Status (1)
| Country | Link |
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| CN (1) | CN202936509U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102995108A (en) * | 2012-11-27 | 2013-03-27 | 无锡市蓝德光电科技有限公司 | Continuous charging silicon single crystal furnace |
| CN106544726A (en) * | 2016-11-30 | 2017-03-29 | 江苏恒合科技有限公司 | A kind of crystal pulling, charging, material, the method for separating the continuous drawing silicon single crystal rod that impurity is synchronously carried out |
-
2012
- 2012-11-27 CN CN 201220637399 patent/CN202936509U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102995108A (en) * | 2012-11-27 | 2013-03-27 | 无锡市蓝德光电科技有限公司 | Continuous charging silicon single crystal furnace |
| CN106544726A (en) * | 2016-11-30 | 2017-03-29 | 江苏恒合科技有限公司 | A kind of crystal pulling, charging, material, the method for separating the continuous drawing silicon single crystal rod that impurity is synchronously carried out |
| WO2018099334A1 (en) * | 2016-11-30 | 2018-06-07 | 江苏拜尔特光电设备有限公司 | Method for continuously drawing monocrystalline silicon rod by synchronously carrying out crystal drawing, material feeding, material melting and impurity separation |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130515 Termination date: 20181127 |
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| CF01 | Termination of patent right due to non-payment of annual fee |