CN202930925U - Integrated circuit of improved voltage endurance - Google Patents
Integrated circuit of improved voltage endurance Download PDFInfo
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- CN202930925U CN202930925U CN 201220619741 CN201220619741U CN202930925U CN 202930925 U CN202930925 U CN 202930925U CN 201220619741 CN201220619741 CN 201220619741 CN 201220619741 U CN201220619741 U CN 201220619741U CN 202930925 U CN202930925 U CN 202930925U
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Abstract
The utility model provides an integrated circuit, which comprises an over-voltage detection circuit and a switching circuit. The over-voltage detection circuit detects whether the power voltage applied to the integrated circuit is too large or not according to a preset voltage detection threshold. Upon detecting the over-voltage condition of the power voltage, the over-voltage detection circuit outputs an over-voltage protection signal to disable the switching circuit. Compared with the prior art, the integrated circuit is additionally provided with the over-voltage detection circuit. The over-voltage detection circuit is used for detecting whether the power voltage applied to the integrated circuit exceeds a preset threshold or not. Upon detecting the over-voltage condition of the power voltage, the over-voltage detection circuit timely turns off the switching circuit and/or an overheated power circuit. Therefore, the voltage endurance of the integrated circuit is improved and chips are not easily damaged.
Description
[technical field]
The utility model relates to circuit design field, and particularly a kind of have an integrated circuit that improves voltage endurance.
[background technology]
There are two kinds of voltage endurances in integrated circuit (or claiming chip), a kind of is static voltage endurance, namely chip is applied fixing supply voltage or mains voltage variations very slowly when (for example following rate of change of 0.1V/100uS), the highest withstand voltage that integrated circuit does not damage; Another kind is dynamic voltage endurance, when namely chip being applied dynamic power supplies voltage, and the withstand voltage peak value that integrated circuit does not damage.Experiment is found, the dynamic withstand voltage of the chip of prior art design is far below static withstand voltage, its reason is to exist a lot of stray inductances in the applied environment of reality, when for example being cell-phone charging with charger, be connected to mobile phone from adapter (Adapter) very long electric wire is arranged, also there is long USB electric wire when perhaps being cell-phone charging by the USB line, these electric wires can be introduced larger stray inductance, also there are some long cablings on printed circuit board (PCB), VDD-to-VSS line particularly, these lines are also introduced larger stray inductance.When chip is applied dynamic power supplies voltage, can cause producing on stray inductance extra voltage, after being superimposed upon on supply voltage, extra voltage can obtain higher transient voltage, the due to voltage spikes of moment may cause the device in chip to puncture, further trigger latch phenomenon, finally cause the chip permanent damages.
Yet for the integrated circuit of some not dynamic changes of supply voltage, its withstand voltage properties still can not reach predetermined static withstand voltage threshold value.Therefore, be necessary to provide a kind of improved technical scheme to overcome the problems referred to above.
[utility model content]
The purpose of this utility model is to provide a kind of integrated circuit, and it can improve the voltage endurance of integrated circuit, thereby makes integrated circuit not fragile.
In order to address the above problem; the utility model provides a kind of integrated circuit; it comprises over-voltage detection circuit and switching mode circuit; described over-voltage detection circuit puts on whether overvoltage of supply voltage on described integrated circuit, the described switching mode circuit of output over-voltage protection signal disable when described supply voltage overvoltage being detected according to predefined detection threshold voltage detecting.
Further, export non-overvoltage protection signal when described over-voltage detection circuit detects the non-overvoltage of described supply voltage and enable described switching mode circuit.
Further; when described supply voltage during greater than predefined detection threshold voltage; described over-voltage detection circuit output over-voltage protection signal, when described supply voltage during less than predefined detection threshold voltage, the non-overvoltage protection signal of described over-voltage detection circuit output.
Further, described integrated circuit also comprises power circuit, the described power circuit of overvoltage protection signal disable of described over-voltage detection circuit output, and the non-overvoltage protection signal of described over-voltage detection circuit output enables described power circuit.
Further, described detection threshold voltage is lower than the static withstand voltage of the circuit in described integrated circuit or device, but higher than the static maximum voltage value of described supply voltage.
Further, power circuit is the circuit that output current surpasses 10mA.
Further, described switching mode circuit comprises the switching mode device, and when described switching mode circuit was enabled, described switching mode device was in continuous turn-on and turn-off.
Further, described switching mode circuit is switching mode booster circuit, switching mode reduction voltage circuit and/or switching mode charging circuit.
Compared with prior art, increased over-voltage detection circuit in integrated circuit of the present utility model, whether this over-voltage detection circuit overvoltage occurs for detection of the supply voltage that imposes on this integrated circuit, when the supply voltage overvoltage being detected, timely stopcock type circuit and/or the larger power circuit of heating, improving the voltage endurance capability of this integrated circuit, thereby make chip not fragile.
[description of drawings]
In order to be illustrated more clearly in the technical scheme of the utility model embodiment, during the below will describe embodiment, the accompanying drawing of required use is done to introduce simply, apparently, accompanying drawing in the following describes is only embodiment more of the present utility model, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.Wherein:
Fig. 1 is the structural representation of the integrated circuit in an embodiment of the present utility model;
Fig. 2 is the schematic diagram of a kind of switching mode circuit in Fig. 1.
[embodiment]
For above-mentioned purpose of the present utility model, feature and advantage can be become apparent more, below in conjunction with the drawings and specific embodiments, the utility model is described in further detail.
Alleged " embodiment " or " embodiment " refer to be contained in special characteristic, structure or the characteristic at least one implementation of the utility model herein.Different local in this manual " in one embodiment " that occur not are all to refer to same embodiment, neither be independent or the embodiment mutually exclusive with other embodiment optionally.Unless stated otherwise, herein connection, the word that the expression that is connected, joins is electrically connected all represents directly or indirectly to be electrical connected.
The inventor finds when having the switching mode circuit in chip, the conducting of these switching mode circuit and the switching of cut-off can produce the curent change of moment, can cause like this producing on stray inductance extra voltage, can obtain higher transient voltage after extra voltage is superimposed upon on supply voltage, the due to voltage spikes of these moments may also can cause the device in chip to puncture.Produce extra voltage on stray inductance and generally follow following formula: Δ V=L.di/dt, wherein Δ V is the extra voltage of generation, and L is the inductance value of stray inductance, and di/dt is the time dependent slope of electric current on stray inductance.Simply, the operation of these switching mode devices causes the withstand voltage of integrated voltage to decrease.
Therefore, the utility model has increased over-voltage detection circuit in integrated middle road, whether this over-voltage detection circuit overvoltage occurs for detection of the supply voltage that imposes on integrated circuit, when the supply voltage overvoltage being detected, in time turn-off the switching mode circuit in integrated circuit, with the voltage endurance capability of raising integrated circuit, thereby make integrated circuit not fragile.
Please refer to shown in Figure 1ly, it is the circuit diagram of the integrated circuit 100 in an embodiment of the present utility model.Described integrated circuit 100 comprises over-voltage detection circuit 110, switching mode circuit 120, power circuit 130 and other circuit 140.
Described over-voltage detection circuit 110 puts on whether overvoltage of supply voltage VIN on described integrated circuit 100 according to predefined detection threshold voltage detecting, and by its output OVP output corresponding signal.In one embodiment, as described supply voltage VIN during greater than predefined detection threshold voltage, its output over-voltage protection signal; During less than predefined detection threshold voltage, it exports non-overvoltage protection signal as described supply voltage VIN.Generally, described predefined detection threshold voltage is lower than the static withstand voltage of the circuit in integrated circuit 100 or device, but higher than the static maximum voltage value of supply voltage VIN.for example, for conventional 5V integrated circuit technology, the NMOS that its inner operating voltage is 5V (N-type MetalOxide Semiconductor) transistor and PMOS (P-type Metal Oxide Semiconductor) transistorized puncture voltage (being static withstand voltage) is about 10V, if the input supply voltage VIN of this integrated circuit 100 is from charger for mobile phone (adapter), and the static ceiling voltage of the supply voltage VIN that charger for mobile phone provides is 5.5V, detection threshold voltage that can described over-voltage detection circuit 110 is set to higher than 5.5V and lower than 10V, such as being 6.5V.
Include the switching mode device in described switching mode circuit 120.Described switching mode circuit 120 is when operation, and described switching mode device can cause the curent change of moment in continuous turn-on and turn-off.Described switching mode circuit 120 has the control end of enabling, and this enables control end and is connected with the output OVP of described over-voltage detection circuit 110.When described over-voltage detection circuit 110 output over-voltage protection signal, even enable described switching mode circuit 120 normal operations of described switching mode circuit 120(); When the described over-voltage detection circuit 110 non-overvoltage protection signal of output, even the described switching mode circuit 120 of the described switching mode circuit of disable 120(is not worked), can improve the withstand voltage of integrated circuit 100 like this, make chip not fragile.
Its reason is, there is stray inductance in applied environment due to integrated circuit 100, when described switching mode circuit 120 is carried out switch motion in the course of the work, can produce the curent change of moment, thereby cause producing on stray inductance extra voltage, this extra voltage is superimposed upon supply voltage VIN can obtain higher transient voltage after upper, and as supply voltage VIN enough greatly the time, its corresponding transient voltage spike can cause that in chip, device punctures.Can trigger latch-up when breakdown current acquires a certain degree, cause larger electric current, thereby make the overheated and permanent damages of device.Therefore, withstand voltage in order to improve chip, be necessary when supply voltage VIN reaches certain threshold value, described switching mode circuit 120 is not worked, with the extra voltage that impose on integrated circuit of minimizing due to the switch motion generation of described switching mode circuit 120, thus the voltage endurance capability of raising chip.
Described switching mode circuit 120 can be switched-mode power supply circuit, and such as the switching mode booster circuit, the switching mode reduction voltage circuit also can be switching mode charging circuit etc.Hereinafter will enumerate a kind of switching mode reduction voltage circuit.
Described power circuit 130 has larger heating power usually.In one embodiment, the circuit that output current surpasses 10mA can be called as power circuit, surpasses the voltage regulator of 10mA such as output current.Described power circuit 130 has the control end of enabling, and this enables control end and is connected with the output OVP of described over-voltage detection circuit 110.When described over-voltage detection circuit 110 output over-voltage protection signal, even enable described power circuit 130 work of described power circuit 130(); When the described over-voltage detection circuit 110 non-overvoltage protection signal of output, even the described power circuit 130 of the described power circuit 130(of disable is not worked), so also can further improve the withstand voltage of chip, make chip not fragile.Its reason is, when source electrode and the drain break down of semiconductor device, but when super-high-current and superheating phenomenon not occurring, generally can not damage, and temperature more easily triggers latch-up when higher.Latch-up forms positive current feedback, and electric current is constantly increased, until damage circuit.At first latch-up is generally tied forward conduction by P-N and is triggered, and P-N knot forward conduction required voltage is negative temperature coefficient, and namely this voltage reduces with the temperature rising, so the more high latch-up that more easily triggers of temperature.Withstand voltage in order to improve chip, be necessary the control chip temperature, namely when described supply voltage VIN reaches certain threshold voltage, do not work to prevent latch-up by the control larger power circuit 130 that generates heat.
Experiment shows, in not adopting execution mode of the present utility model, and when supply voltage VIN is elevated to 6.5V, will be damaged for the chip that 5V technique is made; And adopting execution mode of the present utility model, the withstand voltage 10V that can be raised to of chip namely can tolerate the supply voltage VIN of 10V for the chip of 5V technique manufacturing.
In sum, increase over-voltage detection circuit in integrated circuit of the present utility model, this over-voltage detection circuit detects the supply voltage VIN that imposes on integrated circuit and overvoltage whether occurs, when the supply voltage overvoltage being detected, timely stopcock type circuit and the larger power circuit of heating, avoiding occuring too early latch-up as far as possible, thereby improve the voltage endurance capability of chip, make chip not fragile.
Fig. 2 shows a kind of switching mode reduction voltage circuit, and described switching mode reduction voltage circuit comprises reduced output voltage circuit 210 and feedback control circuit 220.Described reduced output voltage circuit 210 comprises input power Vi, the first power switch K1, the second power switch K2, inductance L 1 and capacitor C 1, described input power Vi is by the first power switch K1 and the second power switch K2 ground connection of series connection successively, inductance L 1 and capacitor C 1 are connected successively is connected between connected node and ground between the first power switch K1 and the second power switch K2, and the connected node between inductance L 1 and capacitor C 1 is as the output VO of described reduced output voltage circuit 210.The turn-on and turn-off of described reduced output voltage circuit 210 by the first power switch K1 and the second power switch K2 are carried out step-down to obtain output voltage VO with the voltage of input power Vi.Described feedback control circuit 220 comprises the second output that the first output of being connected with the control end of the first power switch K1 is connected with control end with the second power switch K2, the second control signal that it is controlled the first control signal of the first power switch K1 conducting or shutoff and control the second power switch K2 conducting or shutoff by the second output output by the first output output according to the output voltage VO of described reduced output voltage circuit 210, make the first power switch K1 and the second power switch K2 alternate conduction, thereby output voltage VO is adjusted to certain set point.
It is pointed out that being familiar with any change that the person skilled in art does embodiment of the present utility model does not all break away from the scope of claims of the present utility model.Correspondingly, the scope of claim of the present utility model also is not limited only to previous embodiment.
Claims (8)
1. an integrated circuit, is characterized in that, it comprises over-voltage detection circuit and switching mode circuit,
Described over-voltage detection circuit puts on whether overvoltage of supply voltage on described integrated circuit, the described switching mode circuit of output over-voltage protection signal disable when described supply voltage overvoltage being detected according to predefined detection threshold voltage detecting.
2. integrated circuit according to claim 1, is characterized in that, exports non-overvoltage protection signal and enable described switching mode circuit when described over-voltage detection circuit detects the non-overvoltage of described supply voltage.
3. integrated circuit according to claim 2; it is characterized in that; when described supply voltage during greater than predefined detection threshold voltage; described over-voltage detection circuit output over-voltage protection signal; when described supply voltage during less than predefined detection threshold voltage, the non-overvoltage protection signal of described over-voltage detection circuit output.
4. integrated circuit according to claim 3; it is characterized in that; described integrated circuit also comprises power circuit, the described power circuit of overvoltage protection signal disable of described over-voltage detection circuit output, and the non-overvoltage protection signal of described over-voltage detection circuit output enables described power circuit.
5. according to claim 1-4 arbitrary described integrated circuits, is characterized in that, described detection threshold voltage is lower than the static withstand voltage of the circuit in described integrated circuit or device, but higher than the static maximum voltage value of described supply voltage.
6. integrated circuit according to claim 4, is characterized in that, power circuit is the circuit that output current surpasses 10mA.
7. integrated circuit according to claim 2, is characterized in that, described switching mode circuit comprises the switching mode device, and when described switching mode circuit was enabled, described switching mode device was in continuous turn-on and turn-off.
8. integrated circuit according to claim 7, is characterized in that, described switching mode circuit is switching mode booster circuit, switching mode reduction voltage circuit and/or switching mode charging circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220619741 CN202930925U (en) | 2012-11-21 | 2012-11-21 | Integrated circuit of improved voltage endurance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220619741 CN202930925U (en) | 2012-11-21 | 2012-11-21 | Integrated circuit of improved voltage endurance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202930925U true CN202930925U (en) | 2013-05-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220619741 Expired - Fee Related CN202930925U (en) | 2012-11-21 | 2012-11-21 | Integrated circuit of improved voltage endurance |
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| CN (1) | CN202930925U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102983559A (en) * | 2012-11-21 | 2013-03-20 | 无锡中星微电子有限公司 | Integrated circuit capable of improving voltage endurance |
-
2012
- 2012-11-21 CN CN 201220619741 patent/CN202930925U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102983559A (en) * | 2012-11-21 | 2013-03-20 | 无锡中星微电子有限公司 | Integrated circuit capable of improving voltage endurance |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130508 Termination date: 20151121 |
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| EXPY | Termination of patent right or utility model |