CN102983559B - A kind of have the integrated circuit improving voltage endurance - Google Patents
A kind of have the integrated circuit improving voltage endurance Download PDFInfo
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- CN102983559B CN102983559B CN201210475932.2A CN201210475932A CN102983559B CN 102983559 B CN102983559 B CN 102983559B CN 201210475932 A CN201210475932 A CN 201210475932A CN 102983559 B CN102983559 B CN 102983559B
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Abstract
The invention provides a kind of integrated circuit; it comprises over-voltage detection circuit and switching mode circuit; described over-voltage detection circuit puts on the whether overvoltage of supply voltage on described integrated circuit according to the detection threshold voltage detecting preset, the switching mode circuit described in output over-voltage protection signal disable when described supply voltage overvoltage being detected.Compared with prior art, over-voltage detection circuit is added in integrated circuit of the present invention, whether this over-voltage detection circuit there is overvoltage for detecting the supply voltage being applied to this integrated circuit, when supply voltage overvoltage being detected, timely shutdown switch type circuit and/or the larger power circuit that generates heat, to improve the voltage endurance capability of this integrated circuit, thus make chip not fragile.
Description
[technical field]
The present invention relates to circuit design field, particularly a kind of have the integrated circuit improving voltage endurance.
[background technology]
There are two kinds of voltage endurances in integrated circuit (or claiming chip), one is static voltage endurance, namely to chip apply fixing supply voltage or mains voltage variations slowly (rate of change of such as below 0.1V/100uS) time, the highest withstand voltage that integrated circuit does not damage; Another kind is dynamic voltage endurance, when namely dynamic source voltage being applied to chip, and the withstand voltage peak value that integrated circuit does not damage.Experiment finds, the dynamic withstand voltage of the chip of prior art design is far below static withstand voltage, its reason is to there is a lot of stray inductance in the applied environment of reality, such as, when being mobile phone charging with charger, be connected to mobile phone from adapter (Adapter) and have very long electric wire, or also there is longer USB electric wire when being mobile phone charging by USB line, these electric wires can introduce larger stray inductance, printed circuit board (PCB) also exist some longer cablings, particularly VDD-to-VSS line, larger stray inductance also introduced by these lines.When applying dynamic source voltage to chip, can cause stray inductance produces extra voltage, extra voltage superposition can obtain higher transient voltage on the supply voltage afterwards, the due to voltage spikes of moment may cause the device in chip to puncture, further trigger latch phenomenon, finally causes chip permanent damages.
But for the integrated circuit of some supply voltage not dynamic changes, its withstand voltage properties still can not reach the predetermined withstand voltage threshold value of static state.Therefore, be necessary to provide a kind of technical scheme of improvement to overcome the problems referred to above.
[summary of the invention]
The object of the present invention is to provide a kind of integrated circuit, it can improve the voltage endurance of integrated circuit, thus makes integrated circuit not fragile.
In order to solve the problem; the invention provides a kind of integrated circuit; it comprises over-voltage detection circuit and switching mode circuit; described over-voltage detection circuit puts on the whether overvoltage of supply voltage on described integrated circuit according to the detection threshold voltage detecting preset, the switching mode circuit described in output over-voltage protection signal disable when described supply voltage overvoltage being detected.
Further, the enable described switching mode circuit of non-overvoltage protection signal is exported when described over-voltage detection circuit detects the non-overvoltage of described supply voltage.
Further; when described supply voltage is greater than the detection threshold voltage preset; described over-voltage detection circuit output over-voltage protection signal, when described supply voltage is less than the detection threshold voltage preset, described over-voltage detection circuit exports non-overvoltage protection signal.
Further, described integrated circuit also comprises power circuit, power circuit described in the overvoltage protection signal disable that described over-voltage detection circuit exports, the enable described power circuit of non-overvoltage protection signal that described over-voltage detection circuit exports.
Further, described detection threshold voltage lower than the static withstand voltage of the circuit in described integrated circuit or device, but higher than the static maximum voltage value of described supply voltage.
Further, power circuit is the circuit of output current more than 10mA.
Further, described switching mode circuit comprises switching-type device, and when described switching mode circuit is enabled, described switching-type device is in continuous turn-on and turn-off.
Further, described switching mode circuit is switching mode booster circuit, switching mode reduction voltage circuit and/or switch-mode battery-charging circuit.
Compared with prior art, over-voltage detection circuit is added in integrated circuit of the present invention, whether this over-voltage detection circuit there is overvoltage for detecting the supply voltage being applied to this integrated circuit, when supply voltage overvoltage being detected, timely shutdown switch type circuit and/or the larger power circuit that generates heat, to improve the voltage endurance capability of this integrated circuit, thus make chip not fragile.
[accompanying drawing explanation]
In order to be illustrated more clearly in the technical scheme of the embodiment of the present invention, below the accompanying drawing used required in describing embodiment is briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.Wherein:
Fig. 1 is the structural representation of the integrated circuit in one embodiment of the present of invention;
Fig. 2 is the schematic diagram of a kind of switching mode circuit in Fig. 1.
[embodiment]
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, and below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation.
Alleged herein " embodiment " or " embodiment " refers to special characteristic, structure or the characteristic that can be contained at least one implementation of the present invention.Different local in this manual " in one embodiment " occurred not all refers to same embodiment, neither be independent or optionally mutually exclusive with other embodiments embodiment.Unless stated otherwise, connection herein, be connected, word that the expression that connects is electrically connected all represents and is directly or indirectly electrical connected.
Inventor finds when there is switching mode circuit in chip, the conducting of these switching mode circuit and the switching of cut-off can produce the curent change of moment, can cause like this stray inductance produces extra voltage, extra voltage superposition can obtain higher transient voltage on the supply voltage afterwards, and the due to voltage spikes of these moments may also can cause the device in chip to puncture.Stray inductance produces extra voltage and generally follow following formula: Δ V=L.di/dt, wherein Δ V is the extra voltage produced, and L is the inductance value of stray inductance, and di/dt is the time dependent slope of electric current in stray inductance.Briefly, the operation of these switching-type device causes the withstand voltage of integrated voltage to decrease.
Therefore, the present invention adds over-voltage detection circuit in integrated Road, whether this over-voltage detection circuit there is overvoltage for detecting the supply voltage being applied to integrated circuit, when supply voltage overvoltage being detected, switching mode circuit in timely shutoff integrated circuit, to improve the voltage endurance capability of integrated circuit, thus make integrated circuit not fragile.
Please refer to shown in Fig. 1, it is the circuit diagram of the integrated circuit 100 in one embodiment of the present of invention.Described integrated circuit 100 comprises over-voltage detection circuit 110, switching mode circuit 120, power circuit 130 and other circuit 140.
Described over-voltage detection circuit 110 puts on supply voltage VIN on described integrated circuit 100 whether overvoltage according to the detection threshold voltage detecting preset, and exports corresponding signal by its output OVP.In one embodiment, when described supply voltage VIN is greater than the detection threshold voltage preset, its output over-voltage protection signal; When described supply voltage VIN is less than the detection threshold voltage preset, it exports non-overvoltage protection signal.Generally, described in the detection threshold voltage that presets lower than the static withstand voltage of the circuit in integrated circuit 100 or device, but higher than the static maximum voltage value of supply voltage VIN.Such as, for conventional 5V integrated circuit technology, the operating voltage of its inside is that NMOS (the N-type Metal Oxide Semiconductor) transistor of 5V and the puncture voltage (i.e. static withstand voltage) of PMOS (P-type Metal Oxide Semiconductor) transistor are about 10V, if the input supply voltage VIN of this integrated circuit 100 is from charger for mobile phone (adapter), and the static ceiling voltage of supply voltage VIN that charger for mobile phone provides is 5.5V, then the detection threshold voltage of described over-voltage detection circuit 110 can be set to higher than 5.5V and lower than 10V, be such as 6.5V.
Switching-type device is included in described switching mode circuit 120.Operationally, described switching-type device, in continuous turn-on and turn-off, can cause the curent change of moment to described switching mode circuit 120.Described switching mode circuit 120 has enable control end, and this enable control end is connected with the output OVP of described over-voltage detection circuit 110.When described over-voltage detection circuit 110 output over-voltage protection signal, even if the described switching mode circuit 120 of enable described switching mode circuit 120(normally works); When described over-voltage detection circuit 110 exports non-overvoltage protection signal, even if the described switching mode circuit 120 of switching mode circuit 120(does not work described in disable), the withstand voltage of integrated circuit 100 can be improved like this, make chip not fragile.
Its reason is, stray inductance is there is in applied environment due to integrated circuit 100, when described switching mode circuit 120 performs switch motion in the course of the work, the curent change of moment can be produced, thus cause stray inductance produces extra voltage, this extra voltage is superimposed upon after on supply voltage VIN can obtain higher transient voltage, and when supply voltage VIN is enough large, the transient voltage spike of its correspondence can cause device in chip to puncture.Understand trigger latch effect when breakdown current acquires a certain degree, cause more big current, thus make device overheated and permanent damages.Therefore, withstand voltage in order to improve chip, be necessary when supply voltage VIN reaches certain threshold value, described switching mode circuit 120 is not worked, to reduce the extra voltage being applied to integrated circuit because the switch motion of described switching mode circuit 120 produces, thus the voltage endurance capability of raising chip.
Described switching mode circuit 120 can be switched-mode power supply circuit, such as switching mode booster circuit, switching mode reduction voltage circuit, also can be switch-mode battery-charging circuit etc.Hereafter will enumerate a kind of switching mode reduction voltage circuit.
Described power circuit 130 has larger heating power usually.In one embodiment, output current can be called as power circuit more than the circuit of 10mA, and such as output current is more than the voltage regulator of 10mA.Described power circuit 130 has enable control end, and this enable control end is connected with the output OVP of described over-voltage detection circuit 110.When described over-voltage detection circuit 110 output over-voltage protection signal, even if the described power circuit 130 of enable described power circuit 130(works); When described over-voltage detection circuit 110 exports non-overvoltage protection signal, even if the described power circuit 130 of power circuit 130(described in disable does not work), so also can improve the withstand voltage of chip further, make chip not fragile.Its reason is, when source electrode and the drain break down of semiconductor device, but when there is not super-high-current and superheating phenomenon, generally can not damage, and when temperature is higher, easier trigger latch effect.Latch-up forms positive current feedback, and electric current is constantly increased, until damage circuit.First latch-up generally triggered by P-N junction forward conduction, and P-N junction forward conduction required voltage is negative temperature coefficient, and namely this voltage rises with temperature and reduces, so the more high easier trigger latch effect of temperature.Withstand voltage in order to improve chip, be necessary control chip temperature, namely when described supply voltage VIN reaches certain threshold voltage, do not worked by the larger power circuit 130 of control heating and prevent latch-up.
Experiment shows, is not adopting in embodiments of the present invention, and when supply voltage VIN is elevated to 6.5V, the chip for 5V manufacture technics will be damaged; And adopting embodiments of the present invention, the withstand voltage of chip can be raised to 10V, namely can tolerate the supply voltage VIN of 10V for the chip of 5V manufacture technics.
Other circuit 140 can be such as current biasing circuit, low current voltage stabilizing circuit, various low consumed power operational amplifier, various low-power consumption comparison circuits etc., and these circuital current consumption of great majority are less than 1mA, little on withstand voltage impact.
In sum, over-voltage detection circuit is increased in integrated circuit of the present invention, this over-voltage detection circuit detects the supply voltage VIN being applied to integrated circuit and whether occurs overvoltage, when supply voltage overvoltage being detected, timely shutdown switch type circuit and the larger power circuit that generates heat, to avoid too early latch-up occurring as far as possible, thus improve the voltage endurance capability of chip, make chip not fragile.
Fig. 2 shows a kind of switching mode reduction voltage circuit, and described switching mode reduction voltage circuit comprises reduced output voltage circuit 210 and feedback control circuit 220.Described reduced output voltage circuit 210 comprises input power Vi, the first power switch K1, the second power switch K2, inductance L 1 and electric capacity C1, described input power Vi is by the first power switch K1 of connecting successively and the second power switch K2 ground connection, between the connected node that what inductance L 1 and electric capacity C1 connected successively be connected between the first power switch K1 and the second power switch K2 and ground, the connected node between inductance L 1 and electric capacity C1 is as the output VO of described reduced output voltage circuit 210.The voltage of input power Vi is carried out step-down to obtain output voltage VO by the turn-on and turn-off of the first power switch K1 and the second power switch K2 by described reduced output voltage circuit 210.Described feedback control circuit 220 comprises the first output be connected with the control end of the first power switch K1 and the second output be connected with the control end of the second power switch K2, it is passed through the first output according to the output voltage VO of described reduced output voltage circuit 210 and exports the first control signal of control first power switch K1 conducting or shutoff and exported the second control signal of control second power switch K2 conducting or shutoff by the second output, make the first power switch K1 and the second power switch K2 alternate conduction, thus output voltage VO is adjusted to certain set point.
It is pointed out that the scope be familiar with person skilled in art and any change that the specific embodiment of the present invention is done all do not departed to claims of the present invention.Correspondingly, the scope of claim of the present invention is also not limited only to previous embodiment.
Claims (5)
1. an integrated circuit, is characterized in that, it comprises over-voltage detection circuit and switching mode circuit,
Described over-voltage detection circuit puts on the whether overvoltage of supply voltage on described integrated circuit according to the detection threshold voltage detecting preset, the switching mode circuit described in output over-voltage protection signal disable when described supply voltage overvoltage being detected,
Described detection threshold voltage lower than the static withstand voltage of the device in described integrated circuit, but higher than the static maximum voltage value of described supply voltage,
Described integrated circuit also comprises power circuit; power circuit described in the overvoltage protection signal disable that described over-voltage detection circuit exports; the enable described power circuit of non-overvoltage protection signal that described over-voltage detection circuit exports, power circuit is the circuit of output current more than 10mA.
2. integrated circuit according to claim 1, is characterized in that, exports the enable described switching mode circuit of non-overvoltage protection signal when described over-voltage detection circuit detects the non-overvoltage of described supply voltage.
3. integrated circuit according to claim 2; it is characterized in that; when described supply voltage is greater than the detection threshold voltage preset; described over-voltage detection circuit output over-voltage protection signal; when described supply voltage is less than the detection threshold voltage preset, described over-voltage detection circuit exports non-overvoltage protection signal.
4. integrated circuit according to claim 2, is characterized in that, described switching mode circuit comprises switching-type device, and when described switching mode circuit is enabled, described switching-type device is in continuous turn-on and turn-off.
5. integrated circuit according to claim 4, is characterized in that, described switching mode circuit is switching mode booster circuit, switching mode reduction voltage circuit and/or switch-mode battery-charging circuit.
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| CN201210475932.2A CN102983559B (en) | 2012-11-21 | 2012-11-21 | A kind of have the integrated circuit improving voltage endurance |
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| CN201210475932.2A CN102983559B (en) | 2012-11-21 | 2012-11-21 | A kind of have the integrated circuit improving voltage endurance |
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| CN102983559A CN102983559A (en) | 2013-03-20 |
| CN102983559B true CN102983559B (en) | 2015-09-09 |
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| CN202930925U (en) * | 2012-11-21 | 2013-05-08 | 无锡中星微电子有限公司 | Integrated circuit of improved voltage endurance |
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Address after: A 530 Taihu international science and Technology Park building 214135 Qingyuan Road in Jiangsu province Wuxi City District 10 layer Patentee after: WUXI ZHONGGAN MICROELECTRONIC CO., LTD. Address before: A 530 Taihu international science and Technology Park building 214135 Qingyuan Road in Jiangsu province Wuxi City District 10 layer Patentee before: Wuxi Vimicro Co., Ltd. |