CN202885721U - Thickness gauge structure for measuring wafer thickness in lapping process - Google Patents
Thickness gauge structure for measuring wafer thickness in lapping process Download PDFInfo
- Publication number
- CN202885721U CN202885721U CN 201220478618 CN201220478618U CN202885721U CN 202885721 U CN202885721 U CN 202885721U CN 201220478618 CN201220478618 CN 201220478618 CN 201220478618 U CN201220478618 U CN 201220478618U CN 202885721 U CN202885721 U CN 202885721U
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- CN
- China
- Prior art keywords
- wafer
- base
- measuring
- face
- reference seat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000005259 measurement Methods 0.000 abstract description 6
- 239000012634 fragment Substances 0.000 abstract description 3
- 230000003014 reinforcing effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
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- A Measuring Device Byusing Mechanical Method (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The utility model provides a thickness gauge structure for measuring the thickness of a wafer in the process of grinding the wafer, which avoids the situation of fragments caused by falling of the wafer and reduces the process loss; the wafer measurement error is reduced in the measurement process, and the product yield is improved. It includes base, micrometer, wafer, its characterized in that: the base is horizontally arranged, the vertical plate is supported on the upper end face of the base, one end of the transverse supporting plate is fixedly connected with one side of the vertical plate, the micrometer is arranged at one end of the transverse supporting plate, the measuring end of a micrometer screw rod of the micrometer penetrates through the transverse supporting plate and then vertically faces the upper end face of the base, a reference seat is arranged on the micrometer screw rod corresponding to the upper end face of the base, the wafer is arranged in a gap between the micrometer screw rod and the reference seat, the upper end face of the wafer is tightly attached to the measuring end of the micrometer screw rod, and the lower end face of the wafer is tightly attached to the upper end face of the reference seat.
Description
Technical field
The utility model relates to the wafer field of measuring technique of semiconductor packages, is specially a kind of thicknessmeter structure of measuring wafer thickness for the abrasive disc process.
Background technology
Existing thicknessmeter such as Fig. 1, when it measures wafer thickness, the central shaft of wafer 1 must be perpendicular to measuring bearing 2, and micrometric screw 4 horizontal positioned of milscale 3, and so that the reference seat 5 of measurement bearing 2 and the measuring junction of micrometric screw 4 are aligned with each other, measure bearing 2 and be supported on base 6, measurement need be taked multimetering, when measuring wafer corner thickness, sometimes because the measuring junction of the micrometric screw 4 of milscale 3 can't be clamped wafer 1 causes wafer 1 to fall causing wafer 1 cracked, cause serious process loss; Clamp when pasting blue film silicon chip at milscale 3, owing to being to pin milscale 3 measurements with the hand reinforcing can cause sagging the causing of blue film to measure the numerical error increase, wafer 1 vertical survey meeting is rocked owing to wafer 1 in addition, also produce larger measurement error value, all can produce a very large impact for lower operation load glue control, bonding routing like this, cause product yield to descend.
Summary of the invention
For the problems referred to above, the utility model provides a kind of thicknessmeter structure of measuring wafer thickness for the abrasive disc process, and the fragment situation that it has avoided wafer to fall causing has reduced the process loss; The wafer measuring error reduces in the measuring process, and product yield improves.
A kind of thicknessmeter structure of measuring wafer thickness for the abrasive disc process, its technical scheme is such: it comprises base, milscale, wafer, it is characterized in that: described base is horizontally disposed, riser is supported on the upper surface of described base, one end of apart transverse support plates is fastenedly connected a side of described riser, one end of described apart transverse support plates is provided with described milscale, the measuring junction of the micrometric screw of described milscale runs through after the described apart transverse support plates vertically the upper surface towards described base, the upper surface of the corresponding described base of described micrometric screw is provided with reference seat, described micrometric screw, gap location between the reference seat is arranged described wafer, the measuring junction of described micrometric screw is close in the upper surface of described wafer, and the upper surface of described reference seat is close in the lower surface of described wafer.
After using structure of the present utility model, milscale is by vertically placing to the thickness of measuring wafer, and the upper surface of reference seat is close in the lower surface of wafer, and the fragment situation that it has avoided wafer to fall causing has reduced the process loss; And in the measuring process, wafer can not rock, and need not to pin milscale with the hand reinforcing, and the wafer measuring error reduces in the measuring process, and product yield improves.
Description of drawings
Fig. 1 is existing thicknessmeter structural representation stereographic map;
Fig. 2 is structural representation stereographic map of the present utility model;
Fig. 3 is front view structural representation of the present utility model.
Embodiment
See Fig. 2, Fig. 3, comprise base 6, milscale 3, wafer 1, base 6 is horizontally disposed, riser 2 is supported on the upper surface of base 6, one end of apart transverse support plates 7 is fastenedly connected a side of riser 2, one end of apart transverse support plates 7 is provided with milscale 3, the measuring junction of the micrometric screw 4 of milscale 3 runs through apart transverse support plates 7 rear vertical upper surfaces towards base 6, the upper surface of micrometric screw 4 corresponding bases 6 is provided with reference seat 5, micrometric screw 4, gap location between the reference seat 5 is arranged wafer 1, the measuring junction of micrometric screw 4 is close in the upper surface of wafer 1, and the upper surface of reference seat 5 is close in the lower surface of wafer 1.
Claims (1)
1. one kind is used for the thicknessmeter structure that the abrasive disc process is measured wafer thickness, it comprises base, milscale, wafer, it is characterized in that: described base is horizontally disposed, riser is supported on the upper surface of described base, one end of apart transverse support plates is fastenedly connected a side of described riser, one end of described apart transverse support plates is provided with described milscale, the measuring junction of the micrometric screw of described milscale runs through after the described apart transverse support plates vertically the upper surface towards described base, the upper surface of the corresponding described base of described micrometric screw is provided with reference seat, described micrometric screw, gap location between the reference seat is arranged described wafer, the measuring junction of described micrometric screw is close in the upper surface of described wafer, and the upper surface of described reference seat is close in the lower surface of described wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220478618 CN202885721U (en) | 2012-09-19 | 2012-09-19 | Thickness gauge structure for measuring wafer thickness in lapping process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220478618 CN202885721U (en) | 2012-09-19 | 2012-09-19 | Thickness gauge structure for measuring wafer thickness in lapping process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202885721U true CN202885721U (en) | 2013-04-17 |
Family
ID=48077142
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220478618 Expired - Lifetime CN202885721U (en) | 2012-09-19 | 2012-09-19 | Thickness gauge structure for measuring wafer thickness in lapping process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202885721U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102853737A (en) * | 2012-09-19 | 2013-01-02 | 无锡红光微电子有限公司 | Thickness gauge structure for measuring wafer thickness in lapping process |
| CN112556590A (en) * | 2020-12-04 | 2021-03-26 | 北京中电科电子装备有限公司 | Wafer measuring device, thickness measuring method and thickness measuring device |
-
2012
- 2012-09-19 CN CN 201220478618 patent/CN202885721U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102853737A (en) * | 2012-09-19 | 2013-01-02 | 无锡红光微电子有限公司 | Thickness gauge structure for measuring wafer thickness in lapping process |
| CN102853737B (en) * | 2012-09-19 | 2015-05-06 | 无锡红光微电子股份有限公司 | Thickness tester structure for measuring thickness of wafer during grinding |
| CN112556590A (en) * | 2020-12-04 | 2021-03-26 | 北京中电科电子装备有限公司 | Wafer measuring device, thickness measuring method and thickness measuring device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20130417 Effective date of abandoning: 20150506 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20130417 Effective date of abandoning: 20150506 |
|
| RGAV | Abandon patent right to avoid regrant |