CN202796975U - Concentrating solar cell provided with inner spherical surface - Google Patents
Concentrating solar cell provided with inner spherical surface Download PDFInfo
- Publication number
- CN202796975U CN202796975U CN2012205138230U CN201220513823U CN202796975U CN 202796975 U CN202796975 U CN 202796975U CN 2012205138230 U CN2012205138230 U CN 2012205138230U CN 201220513823 U CN201220513823 U CN 201220513823U CN 202796975 U CN202796975 U CN 202796975U
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- CN
- China
- Prior art keywords
- spherical surface
- solar cell
- inner spherical
- concentrating solar
- cell provided
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
The utility model provides a concentrating solar cell provided with an inner spherical surface. The concentrating solar cell provided with the inner spherical surface includes an infrared filtering Fresnel condensing lens. The concentrating solar cell provided with the inner spherical surface is characterized in that a semiconductor photovoltaic cell is made on an inner wall of a glass sphere having an empty cavity; an opening is arranged in the semiconductor photovoltaic cell having the inner spherical surface; and the infrared filtering Fresnel condensing lens is arranged above the opening of the semiconductor photovoltaic cell having the inner spherical surface. The material consumption of the concentrating solar cell provided with the inner spherical surface provided by the utility model is reduced by 80 to 90 percents than that of a common flat silicon wafer solar cell, so that the solar cell cost is reduced substantially. The photovoltaic cell provided with the inner spherical surface receives illumination of rays having far higher light intensity than common sunlight. At the same time, the PN junction area of the photovoltaic cell provided with the inner spherical surface is large, so that the photoelectric conversion rate is improved substantially. The infrared filtering Fresnel condensing lens is made of doped PMMA resin capable of filtering heating photons in sunlight effectively, so that a cooling problem of a prior concentrating solar cell is solved.
Description
Technical field
The utility model belongs to solar cell.
Technical background
Improve solar cell photoelectric efficient and reduce by two main trend and the requirement that manufacturing cost is the solar battery technology development.Still there are the problem that the large manufacturing cost of silicon materials consumption is higher, photoelectric conversion efficiency is low in panel solar battery and concentrating solar battery at present, and there is the problem that cools in addition in concentrating solar battery.
Summary of the invention
The purpose of this utility model is to provide the optically focused Internal Spherical Surface solar cell of a kind of photoelectric conversion rate height, low cost of manufacture, as shown in drawings, the utility model comprises an infrared absorption filter photosensitiveness Fresnel collector lens, it is characterized in that at the inwall of a glass hollow spheres semiconductor photovoltaic cells being set, in the Internal Spherical Surface semiconductor photovoltaic cells opening is arranged, Internal Spherical Surface semiconductor solar cell opening top is infrared absorption filter photosensitiveness Fresnel collector lens fixedly.
The utility model selection amorphous silicon (a-si), microcrystal silicon (nc-si), cadmium telluride (cdTe), the semi-conducting materials such as Cu-In selenide (CIGS), make the as shown in Figure 2 semiconductor photovoltaic cells of coating structure by technical methods such as sputter and vapour depositions in cavity glass marble inner wall surface, can guarantee the N type semiconductor layer thickness greater than 0.2 μ m less than 0.5 μ m, make PN junction be positioned at the optimum illumination degree of depth, n type semiconductor layer is made and is satisfied simultaneously the requirement of semiconductor surface suede, whole semiconductor bed thickness only needs number μ m, and therefore dull and stereotyped conventional Silicon Wafer solar cell (semiconductor thickness 350-450 μ m) reduces raw material consumption 80～90% at present., greatly reduce the solar cell cost.Because the light-receiving area M of Fresnel lens is doubly to (general M ﹤ 20) glass marble internal surface area, the Internal Spherical Surface photovoltaic cell will be subject to producing the condensation photovoltaic effect than the light intensity irradiation that exceeds several times common sunshine like this, improve optoelectronic transformation efficiency.Sunlight is injected in the glass spherical cavity behind Fresnel lens filtration, optically focused, effective photon in the incident goal chamber can only finally be produced photoelectric effect by the photovoltaic cell utilization at intracavity reflecting, so this structure has than the higher more effective photon utilance of the dull and stereotyped photovoltaic cell of common once irradiating type.Infrared absorption filter photosensitiveness Fresnel lens is by doping PMMA resin manufacture, with dioxy base phenyl, butoxy phenyl, three kinds of thio diene nickel complexs of hexadecane oxygen base phenyl substituted.Three kinds of complexs are mixed in the PMMA resin with injection moulding method, and this resin can effectively filter the above photon that heats without the photovoltaic effect of 1.1 μ m in the sunlight, reduces the concentrator cell temperature, effectively solves the cooling down problem of existing concentrating solar battery.The utility model another one significant advantage is that the sphere battery has not only increased the PN junction area but also the non-flanged loss greatly than the sheet battery.
In sum, good effect of the present utility model is as follows:
1, dull and stereotyped conventional Silicon Wafer solar cell reduces raw material consumption 80～90% at present, greatly reduces the solar cell cost.
2,The Internal Spherical Surface photovoltaic cell will be subject to producing the condensation photovoltaic effect than the light intensity irradiation that exceeds several times common sunshine, and its PN junction area is large simultaneously, has greatly improved optoelectronic transformation efficiency.
3, adopt doping PMMA resin manufacture infrared absorption filter photosensitiveness Fresnel lens, effectively filter the above photon that heats without the photovoltaic effect of 1.1 μ m in the sunlight, reduce the concentrator cell temperature, solved the cooling down problem of existing concentrating solar battery.
4, non-flanged loss.
Description of drawings
Accompanying drawing 1 is the utility model structural representation.
Accompanying drawing 2 is the utility model Internal Spherical Surface semiconductor photovoltaic cells coating structure schematic diagram.
Legend: 1, Fresnel lens, 2, seal bootr, 3, transparent connector, 4, battery output terminal, 5, glass hollow spheres, 6, semiconductor photovoltaic cells, 7, ZnO film, 8, transparent electrode layer SnO2 film, 9, n type semiconductor layer, 10, p type semiconductor layer, 11, Al metal membrane, 12, substrate of glass.
Embodiment
Use the technical methods formation coatings as shown in Figure 2 such as sputter and vapour deposition at cavity glass inwall, on substrate of glass, upwards be successively Al metal membrane, p type semiconductor layer, n type semiconductor layer, transparent electrode layer SnO2 film and ZnO film, make the Internal Spherical Surface semiconductor photovoltaic cells, open a circular port at hollow spheres, fix upward a seal bootr at the circular port center, with thread and buckle plastic connector infrared absorption filter photosensitiveness Fresnel lens is installed in the upper end of seal bootr, makes in the cavity of focus below circular port of infrared absorption filter photosensitiveness Fresnel lens.On hollow spheres, open again a circular osculum and be used for drawing battery output terminal.600 millimeters of present embodiment infrared absorption filter photosensitiveness Fresnel lens diameters, 150 millimeters of hollow spheres diameters, the light-receiving area of Fresnel lens are 4 times of Internal Spherical Surface semiconductor photovoltaic cells area.
Semiconductor photovoltaic cells coated semiconductor on the inwall of glass hollow spheres adopts amorphous silicon, and (a-si) material mixes germanium and boron formation PN junction layer.
Infrared absorption filter photosensitiveness Fresnel lens is by doping PMMA resin manufacture, dioxy base phenyl, butoxy phenyl, three kinds of complexs of hexadecane oxygen base phenyl mixed with injection moulding method make infrared absorption filter photosensitiveness PMMA Fresnel condenser in the PMMA resin.
Claims (1)
1. optically focused Internal Spherical Surface solar cell, comprise an infrared absorption filter photosensitiveness Fresnel collector lens, it is characterized in that at the inwall of a glass hollow spheres semiconductor photovoltaic cells being set, in the Internal Spherical Surface semiconductor photovoltaic cells opening is arranged, Internal Spherical Surface semiconductor solar cell opening top is infrared absorption filter photosensitiveness Fresnel collector lens fixedly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012205138230U CN202796975U (en) | 2012-10-09 | 2012-10-09 | Concentrating solar cell provided with inner spherical surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012205138230U CN202796975U (en) | 2012-10-09 | 2012-10-09 | Concentrating solar cell provided with inner spherical surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202796975U true CN202796975U (en) | 2013-03-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012205138230U Expired - Fee Related CN202796975U (en) | 2012-10-09 | 2012-10-09 | Concentrating solar cell provided with inner spherical surface |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202796975U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103715979A (en) * | 2012-10-09 | 2014-04-09 | 徐毅 | Concentrating solar cell provided with inner spherical surface |
| CN105978470A (en) * | 2016-04-08 | 2016-09-28 | 合肥中南光电有限公司 | Concentrating photovoltaic device |
-
2012
- 2012-10-09 CN CN2012205138230U patent/CN202796975U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103715979A (en) * | 2012-10-09 | 2014-04-09 | 徐毅 | Concentrating solar cell provided with inner spherical surface |
| CN105978470A (en) * | 2016-04-08 | 2016-09-28 | 合肥中南光电有限公司 | Concentrating photovoltaic device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130313 Termination date: 20151009 |
|
| EXPY | Termination of patent right or utility model |