CN202749400U - Crystalline silicon solar cell string - Google Patents
Crystalline silicon solar cell string Download PDFInfo
- Publication number
- CN202749400U CN202749400U CN 201220323949 CN201220323949U CN202749400U CN 202749400 U CN202749400 U CN 202749400U CN 201220323949 CN201220323949 CN 201220323949 CN 201220323949 U CN201220323949 U CN 201220323949U CN 202749400 U CN202749400 U CN 202749400U
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- CN
- China
- Prior art keywords
- silicon solar
- solar cell
- crystal silicon
- crystalline silicon
- cell sheet
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Abstract
The utility model relates to a crystalline silicon solar cell string, wherein the cell string comprises a plurality of crystalline silicon solar cells and a plurality of solder strips; an aluminium slurry layer or a copper slurry layer is printed at the back of each crystalline silicon solar cell; one ends of the solder strips are welded on the aluminium slurry layer or the copper slurry layer of one crystalline silicon solar cell; and the other ends of the solder strips are welded on a main grid line on the front of the adjacent crystalline silicon solar cell. By adopting the crystalline silicon solar cell string with the above structure, the cost is low; furthermore, the molecular diffusion ability is increased; and the open-circuit voltage is increased.
Description
Technical field
The utility model relates to a kind of crystal silicon solar energy battery, particularly relates to a kind of crystal solar battery sheet string.
Background technology
The conventional solar cell backplate is made of aluminium back surface field and the silver soldering dish that plays the welding effect.The aluminium back surface field is formed by the aluminium paste sintering of silk screen printing, and the photoproduction minority carrier of collecting the back side is not only in the effect of aluminium back surface field, and alloy reaction occurs in sintering process for aluminium and silicon, make hole concentration increase in the silicon, form the P++ interface, increase few sub-diffusivity, improve open circuit voltage; The aluminium back surface field has reflex to long wave light simultaneously, can increase short circuit current; In addition, the reserves of aluminium are abundant, and cost is low.So aluminium has been used a lot of years as conventional crystal silicon solar cell back electric field material.The silver paste of the about 4mm of conventional solar cell back up width is being of a size of the about 40mg of weight on the cell piece of 156mm*156mm as welding material, and this has increased the cost of battery.
The utility model content
The utility model purpose: for problems of the prior art, the purpose of this utility model provides a kind of crystal silicon solar energy battery and preparation method thereof, has solved the high problem of cost that exists in the prior art.
Technical scheme: for realizing above-mentioned utility model purpose, the utility model has designed a kind of crystal silicon solar cell sheet string, should comprise a plurality of crystal silicon solar cell sheets and many weldings at the crystal silicon solar cell sheet string, back up at crystal silicon solar cell sheet has the aluminium paste bed of material or copper slurry layer, one end of welding is welded on the aluminium paste bed of material or copper slurry layer of a slice crystal silicon solar cell sheet, and the other end is welded on the main grid line in adjacent crystal silicon solar cell sheet front.
For better conduction, the thickness of the aluminium paste bed of material or copper slurry layer is 15 ~ 30 μ m.
Manufacture method of the present utility model is:
Step 1: at the back side of the crystal silicon solar energy battery plate silk screen printing aluminium paste bed of material or copper slurry layer;
Step 2: to the aluminium paste bed of material or copper slurry layer dry, sintering;
Step 3: crystal silicon solar cell sheet is placed on preheating on the heating plate;
Step 4 a: end of welding is welded on the main grid line in a slice crystal silicon solar cell sheet front;
Step 5: the other end of welding is fixed on the aluminium paste bed of material or copper slurry layer of adjacent crystal silicon solar cell sheet, adopts ultrasonic bonding that it is welded together;
For fear of in welding process, causing cell piece broken, before welding, cell piece is preheated to 150-300 ℃, warm-up time is greater than 1s.
Carry out before the ultrasonic bonding, the electric iron energising is heated to working temperature 300-400 ℃, open supersonic generator, ultrasonic frequency is set to greater than 15KHz; When carrying out ultrasonic bonding, welding pressure is less than 5 * 10
5Pa, electric iron drags 100-130mm at welding, drags time 3-5s.
Beneficial effect: the utility model is compared with existing technology, directly welding is welded on above the aluminium electrode of cell backside, save the silver electrode at the back side, not only can realize between the battery interconnected reliably, and can save printing equipment and material cost, the printing fragment of simultaneously also avoiding this operation to cause, the manufacturing cost of reduction cell piece.In addition, aluminium substitutes silver-colored the contact with silicon can form the P++ interface, increases few sub-diffusivity, improves open circuit voltage.
Description of drawings
Fig. 1 is the front view of adjacent two crystal silicon solar cell sheets;
Fig. 2 is the end view of crystal silicon solar cell sheet string.
Embodiment
The below by reference to the accompanying drawings, is described further the utility model take the aluminium paste bed of material as example:
As shown in Figure 1, back up at crystal silicon solar cell sheet 3 has the aluminium paste bed of material 2, one end of welding 1 is welded on the aluminium paste bed of material 2 of a slice crystal silicon solar cell sheet 3, and the other end is welded on the main grid line in adjacent crystal silicon solar cell sheet 3 fronts.The thickness of the aluminium paste bed of material 2 is preferably 15 ~ 30 μ m.
In order to make above-mentioned crystal silicon solar cell sheet string, the utility model also provides a kind of manufacture method:
Step 1: make the aluminium electrode, at the back side of the crystal silicon solar cell sheet 3 silk screen printing aluminium paste bed of material 2, aluminum slurry thickness is 15-30 μ m.Aluminium electrode electrode is reserved the print register surplus from silicon chip edge indentation 1-2mm.The aluminium paste bed of material 2 is dried under 200-350 ℃, then temperature is risen to 500-900 ℃ and carry out sintering.
Step 2: crystal silicon solar cell sheet 3 is carried out the operation of making herbs into wool, diffusion, plated film and front-side metallization, and its technique is identical with conventional method.
Step 3: to crystal silicon solar cell sheet 3 preheatings, cell piece is placed on is heated to 150-300 ℃ on the heating plate, the time is greater than 1s.Because crystal silicon solar cell sheet can not cause because of local overheating its fragmentation through preheating in welding process.。
Step 4: with the common electrical flatiron with welding: an end of 1 is welded on the main grid line in a slice crystal silicon solar cell sheet 3 fronts, the other end with welding 1 is fixed on the aluminium paste bed of material 2 of adjacent crystal silicon solar cell sheet 3 again, with ultrasonic bonding welding 1 and the aluminium paste bed of material 2 are merged welding, wherein, the top of welding 1 is 5-30mm to the Edge Distance of crystal silicon solar cell sheet 3.When adopting ultrasonic bonding, the electric iron energising is heated to working temperature 300-400 ℃, open supersonic generator, supersonic frequency is greater than 15KHz, and with the light pressure welding band 1 of electric iron, pressure is less than 5 * 10
5Pa with the tin material on the welding 1 fusing, is dragged to the other end from an end of welding 1, drags distance and is 100-130mm, and the time of dragging is 3-5s.
The structure of the crystal silicon solar cell sheet string that the employing copper slurry is made is identical with manufacture method and aluminum slurry.
Claims (2)
1. crystal silicon solar cell sheet string, comprise multi-disc crystal silicon solar cell sheet (3) and many weldings (1), it is characterized in that: the back up at crystal silicon solar cell sheet (3) has the aluminium paste bed of material or copper slurry layer, one end of welding (1) is welded on the aluminium paste bed of material or copper slurry layer of crystal silicon solar cell sheet (3), and the other end is welded on the positive main grid line of adjacent crystal silicon solar cell sheet (3).
2. a kind of crystal silicon solar cell sheet string according to claim 1, it is characterized in that: the thickness of the described aluminium paste bed of material or copper slurry layer is 15 ~ 30 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220323949 CN202749400U (en) | 2012-07-05 | 2012-07-05 | Crystalline silicon solar cell string |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220323949 CN202749400U (en) | 2012-07-05 | 2012-07-05 | Crystalline silicon solar cell string |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202749400U true CN202749400U (en) | 2013-02-20 |
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ID=47708759
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220323949 Expired - Fee Related CN202749400U (en) | 2012-07-05 | 2012-07-05 | Crystalline silicon solar cell string |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202749400U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102751359A (en) * | 2012-07-05 | 2012-10-24 | 合肥海润光伏科技有限公司 | Crystalline silicon solar battery slice string and manufacturing method thereof |
| US20220216357A1 (en) * | 2019-05-23 | 2022-07-07 | Alpha Assembly Solutions Inc. | Solder paste for module fabrication of solar cells |
-
2012
- 2012-07-05 CN CN 201220323949 patent/CN202749400U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102751359A (en) * | 2012-07-05 | 2012-10-24 | 合肥海润光伏科技有限公司 | Crystalline silicon solar battery slice string and manufacturing method thereof |
| US20220216357A1 (en) * | 2019-05-23 | 2022-07-07 | Alpha Assembly Solutions Inc. | Solder paste for module fabrication of solar cells |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130220 Termination date: 20180705 |