CN202721137U - Solar cell with gradient structure outer frame gate line - Google Patents

Solar cell with gradient structure outer frame gate line Download PDF

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Publication number
CN202721137U
CN202721137U CN 201220245462 CN201220245462U CN202721137U CN 202721137 U CN202721137 U CN 202721137U CN 201220245462 CN201220245462 CN 201220245462 CN 201220245462 U CN201220245462 U CN 201220245462U CN 202721137 U CN202721137 U CN 202721137U
Authority
CN
China
Prior art keywords
grid line
outer frame
gate lines
silicon chip
gate line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 201220245462
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Chinese (zh)
Inventor
姚鹏
钱腾达
顾锡淼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JIAXING YOUTAI SOLAR ENERGY CO Ltd
Original Assignee
JIAXING YOUTAI SOLAR ENERGY CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JIAXING YOUTAI SOLAR ENERGY CO Ltd filed Critical JIAXING YOUTAI SOLAR ENERGY CO Ltd
Priority to CN 201220245462 priority Critical patent/CN202721137U/en
Application granted granted Critical
Publication of CN202721137U publication Critical patent/CN202721137U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

The utility model provides a solar cell with a gradient structure outer frame grid line. The solar cell comprises a silicon chip, main gate lines arranged on the silicon chip, auxiliary gate lines arranged on the silicon chip, and an outer frame gate line, wherein the main gate lines are connected with the auxiliary gate lines, and the outer frame gate line is extended along edges of the silicon chip to form a loop. According to the outer frame gate line of the utility model, on one hand, all main gate lines and auxiliary gate lines are in electrical communication, so that even the main gate lines and the auxiliary gate lines are in false welding, the auxiliary gate lines still can be connected to the main gate lines through the outer frame gate line, on the other hand, false welding can be prevented due to a board part of the outer frame gate line, the reduction of a light shading area is facilitated due to a narrow part of the outer frame gate line, and the work efficiency of the cell is raised.

Description

Solar battery sheet with grading structure housing grid line
Technical field
The utility model relates to solar cell, particularly, relates to the solar battery sheet with grading structure housing grid line.
Background technology
The photovoltaic panel assembly is that a kind of exposure just can produce galvanic Blast Furnace Top Gas Recovery Turbine Unit (TRT) in the sun, and the solid photovoltaic cell of basically mainly making with semiconductor material (for example silicon) forms, and comprises P type semiconductor and N type semiconductor.P type semiconductor (P refers to positive, positively charged): mix a small amount of triad by monocrystalline silicon by special process and form, can be in the inner hole that forms positively charged of semiconductor; N type semiconductor (N refers to negative, and is electronegative): mix a small amount of pentad by monocrystalline silicon by special process and form, can be at the electronegative free electron of the inner formation of semiconductor.
Many positively charged holes and electronegative ionized impurity are arranged in P type semiconductor.Under the effect of electric field, the hole is transportable, and ionized impurity (ion) is fixed.Many movable negatrons and fixing cation are arranged in the N type semiconductor.When the P type contacts with N type semiconductor, spread to N type semiconductor from P type semiconductor in the near interface hole, electronics spreads to P type semiconductor from N type semiconductor.Hole and electronics meet and compound, and charge carrier disappears.Therefore in the interface of near interface, there is a segment distance to lack charge carrier, the charged fixed ion that is distributed in the space is but arranged, be called the space charge region.P type semiconductor space charge on one side is anion, and N type semiconductor space charge on one side is cation.Negative ions produces electric field near interface, and this electric field stops charge carrier further to spread, and reaches balance.
When light frequency surpasses a certain limiting frequency, be subjected to light-struck solar panel surface photoelectron of will overflowing immediately, photoelectric effect occurs.When adding a closed circuit in the solar panel outside, add the forward power supply, the photoelectron of these effusions all arrives anode and just forms photoelectric current.
Electrode pattern of the prior art arranges to improve battery efficiency thick and fast by secondary grid line, but it has also brought simultaneously the too meticulous rosin joint that is connected to that causes easily itself and main grid line of secondary grid line, and impact is to the enrichment of electric charge.
The utility model content
For defective of the prior art, the purpose of this utility model provides a kind of solar battery sheet with grading structure housing grid line.
According to an aspect of the present utility model, a kind of solar battery sheet with grading structure housing grid line is provided, comprise silicon chip and be arranged on main grid line and secondary grid line on the described silicon chip, described main grid line connects described secondary grid line, also comprise the housing grid line, wherein, described housing grid line extends in the form of a ring along the edge of described silicon chip.
Preferably, periodically width is alternately for the width of described housing grid line.
Preferably, seamlessly transit between the wide place of described housing grid line and the narrow place.
Preferably, described main grid line is connected to the widest part of described housing grid line.
Preferably, described secondary grid line is connected to the widest part of described housing grid line.
Described housing grid line of the present utility model is on the one hand with whole main grid lines and the equal electrical communication of secondary grid line, even secondary like this grid line and main grid line rosin joint, this pair grid line also can be connected to described main grid line by described housing grid line; On the other hand, the wide place of described housing grid line can prevent rosin joint, and its narrow place is conducive to reduce shading-area, improves the operating efficiency of battery.
Description of drawings
By reading the detailed description of non-limiting example being done with reference to the following drawings, it is more obvious that other features, objects and advantages of the present utility model will become:
Fig. 1 illustrates the structural representation according to the solar battery sheet with grading structure housing grid line of the present utility model.
Embodiment
The solar battery sheet with grading structure housing grid line that provides according to the utility model, comprise silicon chip 1 and be arranged on main grid line 2 and secondary grid line 3 on the described silicon chip 1, described main grid line 2 connects described secondary grid line 3, also comprise housing grid line 4, wherein, described housing grid line 4 extends in the form of a ring along the edge of described silicon chip 1, and the width of described housing grid line 4 periodically width replaces, as shown in Figure 1.
Described housing grid line of the present utility model is on the one hand with whole main grid lines and the equal electrical communication of secondary grid line, even secondary like this grid line and main grid line rosin joint, this pair grid line also can be connected to described main grid line by described housing grid line; On the other hand, the wide place of described housing grid line can prevent rosin joint, and its narrow place is conducive to reduce shading-area, improves the operating efficiency of battery.
More specifically, seamlessly transit between the wide place of described housing grid line 4 and the narrow place.Described main grid line 2 is connected to the widest part of described housing grid line 4.Described secondary grid line 3 is connected to the widest part of described housing grid line 4.
More than specific embodiment of the utility model is described.It will be appreciated that the utility model is not limited to above-mentioned particular implementation, those skilled in the art can make various distortion or modification within the scope of the claims, and this does not affect flesh and blood of the present utility model.

Claims (5)

1. solar battery sheet with grading structure housing grid line, comprise silicon chip and be arranged on main grid line and secondary grid line on the described silicon chip, described main grid line connects described secondary grid line, it is characterized in that, also comprise the housing grid line, wherein, described housing grid line extends in the form of a ring along the edge of described silicon chip.
2. the solar battery sheet with grading structure housing grid line according to claim 1 is characterized in that, the width of described housing grid line periodically width replaces.
3. the solar battery sheet with grading structure housing grid line according to claim 2 is characterized in that, seamlessly transits between the wide place of described housing grid line and the narrow place.
4. the solar battery sheet with grading structure housing grid line according to claim 2 is characterized in that, described main grid line is connected to the widest part of described housing grid line.
5. the solar battery sheet with grading structure housing grid line according to claim 2 is characterized in that, described secondary grid line is connected to the widest part of described housing grid line.
CN 201220245462 2012-05-25 2012-05-25 Solar cell with gradient structure outer frame gate line Expired - Fee Related CN202721137U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201220245462 CN202721137U (en) 2012-05-25 2012-05-25 Solar cell with gradient structure outer frame gate line

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201220245462 CN202721137U (en) 2012-05-25 2012-05-25 Solar cell with gradient structure outer frame gate line

Publications (1)

Publication Number Publication Date
CN202721137U true CN202721137U (en) 2013-02-06

Family

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Family Applications (1)

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CN 201220245462 Expired - Fee Related CN202721137U (en) 2012-05-25 2012-05-25 Solar cell with gradient structure outer frame gate line

Country Status (1)

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CN (1) CN202721137U (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106887475A (en) * 2017-03-03 2017-06-23 广东爱康太阳能科技有限公司 P-type PERC double-sided solar batteries and its component, system and preparation method
CN106920852A (en) * 2015-12-28 2017-07-04 茂迪股份有限公司 Solar cell and module thereof
US10069019B2 (en) 2014-10-31 2018-09-04 Byd Company Limited Solar cell unit, solar cell array, solar cell module and manufacturing method thereof

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10069019B2 (en) 2014-10-31 2018-09-04 Byd Company Limited Solar cell unit, solar cell array, solar cell module and manufacturing method thereof
US10193003B2 (en) 2014-10-31 2019-01-29 Byd Company Limited Solar cell unit, solar cell array, solar cell module and manufacturing method thereof
US10381493B2 (en) 2014-10-31 2019-08-13 Byd Company Limited Solar cell unit, solar cell array, solar cell module and manufacturing method thereof
US10529868B2 (en) 2014-10-31 2020-01-07 Byd Company Limited Solar cell array, solar cell module and manufacturing method thereof
CN106920852A (en) * 2015-12-28 2017-07-04 茂迪股份有限公司 Solar cell and module thereof
CN106920852B (en) * 2015-12-28 2018-06-26 茂迪股份有限公司 Solar cell and module thereof
CN106887475A (en) * 2017-03-03 2017-06-23 广东爱康太阳能科技有限公司 P-type PERC double-sided solar batteries and its component, system and preparation method
CN106887475B (en) * 2017-03-03 2019-07-05 广东爱旭科技股份有限公司 P-type PERC double-sided solar battery and its component, system and preparation method

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C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130206

Termination date: 20150525

EXPY Termination of patent right or utility model