CN202712135U - Microwave slice-cracking equipment - Google Patents
Microwave slice-cracking equipment Download PDFInfo
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- CN202712135U CN202712135U CN 201220360782 CN201220360782U CN202712135U CN 202712135 U CN202712135 U CN 202712135U CN 201220360782 CN201220360782 CN 201220360782 CN 201220360782 U CN201220360782 U CN 201220360782U CN 202712135 U CN202712135 U CN 202712135U
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- microwave
- heated chamber
- control system
- silicon chip
- slice
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Abstract
The utility model discloses microwave slice-cracking equipment, belonging to the technical field of microwave slice-cracking. The microwave slice-cracking equipment comprises a heating chamber, a heater, microwave generators, a silicon slice transmission manipulator, an object stage, a temperature-measuring system and a control system, wherein the heater, the temperature-measuring system and the control system are arranged in the heating chamber, and the microwave generators are arranged outside the heating chamber; and the object stage is fixed on the bottom surface of the heating chamber, a transmission hole is formed on the sidewall of the heating chamber, the silicon slice transmission manipulator is connected with the control system, and the control system is used for controlling the silicon slice transmission manipulator to transfer a silicon slice into the heating chamber via the transmission hole, placing the silicon slice on the object stage, grabbing the silicon slice from the object stage, and transferring the silicon slice out of the heating chamber via the transmission hole. By utilizing the equipment for performing microwave slice-cracking, automatic control and regulation for the machining temperature of the silicon slice can be realized as needed, and industrialized production for silicon slices can be realized simultaneously.
Description
Technical field
The utility model relates to microwave sliver technical field, is specifically related to a kind of microwave breaking device.
Background technology
One nine eight zero years, IBM development and application oxonium ion direct injection (Separation by Implantation Oxygen, SIMOX) develop makes the SOI material.This processing procedure need to be implanted the very oxonium ion of high dose (about 5 * 1018/cm2), although form silicon dioxide layer through the high temperature anneal, and in clean again mode first except most defective, but still the defective that causes because of ion is all eliminated.By in 1992, a kind of technology of film transfer is used in one one research of France for Commossariat A l ' the Energie Atomique of company of guiding, name is called intelligence cutting method (Smart Cut), can be successfully with the film transfer of silicon single crystal to another silicon substrate.This processing procedure at first flows into hydrogen ion in the Silicon Wafer that a slice generated oxide layer, carries out bonding with another sheet Silicon Wafer again.When the high temperature anneal, the hydrogen ion that injects obtains kinetic energy, fill in the microcrack and aggregate into hydrogen molecule, the hydrogen molecule that forms can not leave the crack with diffusion again, according to the PV=Nrt principle, the hydrogen molecule number enlarges fast, so the crack internal pressure is risen, so the expansion of examination microcrack to form the crack dull and stereotyped and be gathered into the large tracts of land ceasma, last so that element wafer levels is peeled off, produce film and be transferred on the base material wafer formation soi structure
The TM processing procedure is by injecting low dosage (1E16-1E17/cm
2) H
+Arrive the silicon chip certain depth, by the mode of heating microwave, make the H in the silicon chip again
+Be gathered into H
2Reach the purpose of sliver.
So-called microwave sliver refers to replace traditional thermal source with microwave, and silicon chip reaches certain temperature to the absorption of microwave energy, thereby makes H
+Be gathered into H
2Reach the effect that silicon chip is split.Because it is compared with injection oxygen isolation technology, the SOI that obtains belongs to diverse ways, so microwave sliver technology is more widely used gradually.But for this process of microwave sliver, the present domestic Apparatus and method for that does not also work out the microwave sliver, existing microwave sliver process all is to carry out in the laboratory, can only operate a slice silicon chip separately at every turn, simultaneously to as required control and the adjusting of precision of temperature, again owing to can only operate by monolithic, therefore can't suitability for industrialized production, in batches output.
The utility model content
The purpose of this utility model is to provide a kind of microwave breaking device that silicon chip is split by microwave heating, uses automatic control and adjusting that this equipment can be realized the silicon chip processing temperature as required, realizes simultaneously silicon chip industrialization production.
For achieving the above object, the technical solution adopted in the utility model is:
A kind of microwave breaking device, this equipment comprises heated chamber, heater, microwave generator, silicon chip conveying mechanical hand, objective table, temp measuring system and control system; Wherein: described heater, temp measuring system and set-up of control system are inner in heated chamber, and described microwave generator is arranged at the heated chamber outside; Described objective table is fixed on the heated chamber bottom surface, the heated chamber sidewall is opened transmission hole, described silicon chip conveying mechanical hand is connected with control system, and control system control silicon chip conveying mechanical hand moves into silicon chip in the heating cavity by described transmission hole and places on the objective table and from objective table crawl silicon chip and by described transmission hole hole and shifts out heated chamber.
Described control system is connected with microwave generator, temp measuring system, heater; Described control system is accepted the real time temperature in the heated chamber that temp measuring system transmits, the startup of control heater and closing, and control and regulate startup and the heating power of microwave generator.
Described temp measuring system is the electric thermo-couple temperature instrument that is arranged on heated chamber inside, is connected with described control system; The quantity of described electric thermo-couple temperature instrument is 4～10, is arranged at bottom and the top of heated chamber.
Described heated chamber is made by 316 stainless steels.
Described microwave generator is connected with heated chamber by waveguide, and the quantity of described microwave generator is 2 ~ 8.
The setting of described heated chamber outer wall prevents the microwave leakage wall, is used for preventing the leakage of microwave.
Described heated chamber inwall arranges heat insulation wall, effectively makes the not outwards conduction of heat in the heated chamber.
Use the method that the said equipment carries out the microwave sliver, comprise the steps:
1) control system control silicon chip conveying mechanical hand is positioned over silicon chip on the objective table, and then silicon chip conveying mechanical hand is got back to initial position;
2) start heater, make temperature in the heating cavity rise to 220 ℃ after, insulation 10min;
3) open microwave generator and carry out sliver, microwave duration 5min;
4) silicon chip after silicon chip conveying mechanical hand ftractures from the objective table crawl shifts out heating cavity with it.
Above-mentioned steps 3) in, when carrying out sliver, temperature is 220 ~ 450 ℃ in the control heating cavity.
The utlity model has following beneficial effect:
When 1, utilizing the utility model equipment to carry out the microwave sliver, by starting the temperature in the temp measuring system monitoring heated chamber, and by the temperature in control system control and the adjusting heated chamber, the temperature in each stage in the microwave sliver process can accurately be controlled, satisfy the actual temperature requirement of silicon chip sliver, guarantee to prepare high-quality silicon chip.
2, the utility model is pressed the setting means design temperature by control system, and the motion of control silicon chip conveying mechanical hand makes the sliver process accurate, stable, clean, and automatic cycle carries out simultaneously, can realize mass production.
Description of drawings
Fig. 1 is microwave breaking device structural representation among the utility model embodiment.
Fig. 2 is the flow chart of the utility model microwave splinter method.
Fig. 3 is the utility model silicon chip conveying mechanical hand structural representation.
Among the figure: 1-electric thermo-couple temperature instrument; The 2-microwave generator; The 3-objective table; The 4-transmission hole; The 5-heat insulation wall; 6-prevents the microwave from leakage wall; The 7-silicon chip conveying mechanical hand.
Embodiment
Below in conjunction with embodiment and accompanying drawing in detail the utility model is described in detail.
Fig. 1 is the microwave breaking device structural representation that the utility model is used for the TM processing procedure, and this equipment comprises heated chamber, heater, microwave generator 2, silicon chip conveying mechanical hand 7, objective table 3, temp measuring system and control system; Wherein: described heater, temp measuring system and set-up of control system are inner in heated chamber, and described microwave generator 2 is arranged at the heated chamber outside; Described objective table 3 is fixed on the heated chamber bottom surface, 316 stainless steel heated chamber sidewalls are opened transmission hole 4, and control system is controlled described silicon chip conveying mechanical hand 7 and moved into silicon chip in the heating cavity by setting means by described transmission hole 4 and place on the objective table 3 and shift out heated chamber from objective table 3 crawl silicon chips and by described transmission hole 4.The structure of described silicon chip conveying mechanical hand as shown in Figure 3, manipulator has X, Y, Z three axles location and Incision Machine's, the crawl of silicon chip is accurately fullyed recover from an illness surely and prevents the pollution of silicon chip in the operating process.
Described control system is connected with microwave generator 2, temp measuring system, heater; Described control system is accepted the real time temperature in the heated chamber that temp measuring system transmits, the startup of control heater and closing, and control and regulate startup and the heating power of microwave generator 2.
Described temp measuring system is the electric thermo-couple temperature instrument 1 that is arranged on heated chamber inside, is connected with described control system; The quantity of described electric thermo-couple temperature instrument 1 is 4 ~ 10, is arranged at around the objective table of heated chamber bottom and the heated chamber top.
The quantity of described microwave generator setting is 2 ~ 8, is preferably 4, is evenly distributed in outside the heating cavity sidewall, and microwave generator is controlled by control system, according to the needs of heating-up temperature, can work simultaneously, or work independently, also can combination in any work.
Described microwave generator can be set to continous way and two kinds of working methods of timing, timing switch is set is connected with control system, when the needs timing working, press the timing switch button, microwave generator is worked in setting-up time, quits work behind setting-up time.
The setting of heated chamber outer wall prevents microwave leakage wall 6, is used for preventing the leakage of microwave.
Described heated chamber inwall arranges heat insulation wall 5, effectively makes the not outwards conduction of heat in the heated chamber.
Utilize said apparatus to carry out the method for microwave sliver, its flow process as shown in Figure 2.
1) control system control silicon chip conveying mechanical hand takes out pending silicon chip and is placed on the objective table from cassette, and then manipulator is got back to initial point (being initial position);
2) start heater, make temperature in the heating cavity rise to 220 ℃ after, insulation 10min;
3) through step 2) insulation after the unlatching microwave generator carry out sliver, microwave duration 5min, temperature is controlled at 220-450 ℃ in this process;
4) silicon chip conveying mechanical hand shifted out heating cavity from objective table crawl silicon chip with it after sliver was finished, and put into cassette.
Said process can be undertaken by the control system controlled circulation as required.
Claims (7)
1. microwave breaking device, it is characterized in that: this equipment comprises heated chamber, heater, microwave generator, silicon chip conveying mechanical hand, objective table, temp measuring system and control system; Wherein: described heater, temp measuring system and set-up of control system are inner in heated chamber, and described microwave generator is arranged at the heated chamber outside; Described objective table is fixed on the heated chamber bottom surface, the heated chamber sidewall is opened transmission hole, described silicon chip conveying mechanical hand is connected with control system, and control system control silicon chip conveying mechanical hand moves into silicon chip in the heating cavity by described transmission hole and places on the objective table and from objective table crawl silicon chip and by described transmission hole hole and shifts out heated chamber.
2. microwave breaking device according to claim 1, it is characterized in that: described control system is connected with microwave generator, temp measuring system, heater; Described control system is accepted the real time temperature in the heated chamber that temp measuring system transmits, the startup of control heater and closing, and control and regulate startup and the heating power of microwave generator.
3. microwave breaking device according to claim 1, it is characterized in that: described temp measuring system is the electric thermo-couple temperature instrument that is arranged on heated chamber inside, is connected with described control system; The quantity of described electric thermo-couple temperature instrument is 4 ~ 10, is arranged at bottom and the top of heated chamber.
4. microwave breaking device according to claim 1, it is characterized in that: described heated chamber is made by 316 stainless steels.
5. microwave breaking device according to claim 1, it is characterized in that: described microwave generator is connected with heated chamber by waveguide, and the quantity of described microwave generator is 2 ~ 8.
6. microwave breaking device according to claim 1 is characterized in that: what described heated chamber outer wall was provided for preventing microwave leakage prevents the microwave leakage wall.
7. microwave breaking device according to claim 1, it is characterized in that: described heated chamber inwall arranges heat insulation wall.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220360782 CN202712135U (en) | 2012-07-24 | 2012-07-24 | Microwave slice-cracking equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220360782 CN202712135U (en) | 2012-07-24 | 2012-07-24 | Microwave slice-cracking equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202712135U true CN202712135U (en) | 2013-01-30 |
Family
ID=47592412
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220360782 Expired - Lifetime CN202712135U (en) | 2012-07-24 | 2012-07-24 | Microwave slice-cracking equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202712135U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109712880A (en) * | 2018-12-03 | 2019-05-03 | 武汉新芯集成电路制造有限公司 | A kind of method for improving and enhancing system of wafer bonding power |
| DE102017118860B4 (en) * | 2016-11-01 | 2020-10-08 | Shenyang Silicon Technology Co., Ltd. | Manufacturing method for a thin film |
-
2012
- 2012-07-24 CN CN 201220360782 patent/CN202712135U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102017118860B4 (en) * | 2016-11-01 | 2020-10-08 | Shenyang Silicon Technology Co., Ltd. | Manufacturing method for a thin film |
| CN109712880A (en) * | 2018-12-03 | 2019-05-03 | 武汉新芯集成电路制造有限公司 | A kind of method for improving and enhancing system of wafer bonding power |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130130 |
|
| CX01 | Expiry of patent term |