CN202696495U - IGBT (insulated gate bipolar transistor) low-voltage inverter - Google Patents
IGBT (insulated gate bipolar transistor) low-voltage inverter Download PDFInfo
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- CN202696495U CN202696495U CN 201220334115 CN201220334115U CN202696495U CN 202696495 U CN202696495 U CN 202696495U CN 201220334115 CN201220334115 CN 201220334115 CN 201220334115 U CN201220334115 U CN 201220334115U CN 202696495 U CN202696495 U CN 202696495U
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Abstract
The utility model discloses an IGBT (insulated gate bipolar transistor) low-voltage inverter, and belongs to the technical field of semiconductor switches. The low-voltage inverter comprises an inlet terminal 1, a direct current capacitor 2, a composite laminated bus 3, an absorption capacitor 4, an inversion module 5, an inversion module radiator 6, a voltage equalizing resistor 7, a current sensor 8, an outlet terminal 9 and a centrifugal fan 10. The low-voltage inverter has the advantages that the low-voltage inverter is compact in structure, small in size, high in power density and convenient to mount, stray inductance between circuits is low, and output power can completely meet design requirements.
Description
Technical field
The utility model relates to the semiconductor switch field, and a kind of power-converting device specifically is provided, especially a kind of a kind of IGBT low pressure inverter that is applicable in the 200-400kW power bracket.
Background technology
Low pressure inverter in the market, circuit topological structure mainly adopts orthogonal way, namely behind the direct current through the filtering of intermediate dc link, be input to again inversion module, be alternating current output with dc inverter, be used for the control motor.And the structural design of low pressure inverter is varied, and different topology layouts has a great impact for the circuit distributed constant of inverter, electromagnetic interference etc.Irrational mix designs, and not only affects the electric property of inverter, reduces efficiency of assembling, causes waste of raw materials, and causes post-production to safeguard inconvenience, also affects simultaneously whole succinct, aesthetic measure.
Summary of the invention
The utility model is for above deficiency, be based on conventional orthogonal circuit topological structure, provide a kind of simpler, optimize, reasonably inverter structure design, satisfying under the prerequisite of electric property, be convenient to assembly production, save material, reduce installation cost, improve the processing maintenance efficiency, strengthen the overall appearance degree of inverter.
The technical scheme that its technical problem that solves the utility model adopts is as follows:
A kind of IGBT low pressure inverter, wherein, input terminal, dc capacitor, composite laminate bus, Absorption Capacitance, inversion module, inversion module radiator, grading resistor, current sensor, outlet terminal, centrifugal blower; Input terminal is arranged at the inverter top, sets gradually dc capacitor, Absorption Capacitance, inversion module, grading resistor, current sensor, outlet terminal, centrifugal blower below input terminal from top to bottom; The composite laminate bus tightly is overlying on the dc capacitor, and composite laminate bus one end is the direct current input, and an end is connected with the input of inversion module; The output of inversion module adopts busbar connection segment mode; Inverter radiator is arranged on the substrate of inversion module, centrifugal blower adopts the blowing mode that the inversion module radiator is cooled off, each inversion module radiator all fits tightly with the substrate of inversion module, and grading resistor fits tightly on the inversion module radiator.
Centrifugal blower adopts the blowing mode that the inversion module radiator is cooled off, and each inversion module radiator all fits tightly with the substrate of inversion module, and grading resistor fits tightly on the inversion module radiator.Because adopt the quenching mode of centrifugal blower, interiors of products is malleation, prevents that extraneous dust from entering, and fan is in air inlet, and gas flow temperature is low, and centrifugal blower is relative and the air draught blower fan life-span is high.Because adopt the composite laminate bus, can effectively reduce the circuit distributed inductance, the protection inversion module is avoided transient overvoltage and is punctured.Adopt single radiator cooling mode, not only be conducive to the heat radiation of inversion module, and effectively reduced windage loss and improved drafting efficiency.
A kind of preferred structure of a kind of IGBT low pressure inverter of the present invention, wherein, centrifugal blower adopts single air channel mode that the inversion module radiator is cooled off, and the cooling of single air channel can reduce the loss of air quantity, and drafting efficiency is higher.
A kind of preferred structure of a kind of IGBT low pressure inverter of the present invention, wherein, a plurality of dc capacitors are centralized and arrange.Because adopt centralized electric capacity arrangement mode, can effectively reduce the busbar consumption, save the inverter space, increase the overall appearance degree.
A kind of preferred structure of a kind of IGBT low pressure inverter of the present invention, wherein, the inversion module radiator adopts monobasal blade inserting aluminium radiator.Because adopt monobasal blade inserting aluminium radiator, not only can satisfy inversion module heat dispersion, thermal capacity requirement, and processing and fabricating be simple, with low cost.
A kind of preferred structure of a kind of IGBT low pressure inverter of the present invention, wherein, the composite laminate bus adopts positive bus-bar, negative busbar, three layers of parallel stacked of neutral bus to form, and separates by insulating material between the adjacent two-layer bus.Adopt the composite laminate bus, so that compactness simple for structure is saved the inner space, and stacked bus has very high reliable and fail safe, impedance is lower, inductance is lower, has reduced the electric elements probability of damage that causes owing to voltage breakdown, and the composite laminate bus is the modular organization of making to measure, inerrancy is installed, be convenient to install and Site Service, can realize high current carrying capacity by lower voltage, and than the easier cooling of cable.
A kind of preferred structure of a kind of IGBT low pressure inverter of the present invention, wherein, the input and output bus adopts the upper entering and lower leaving design.Because the input and output bus adopts the upper entering and lower leaving design, enterprising mode is convenient to be connected with public direct-flow bus wire, go out mode and be convenient to the user and be connected with motor by the underground cable passage down, thus minimizing bus consumption, the saving cost.
A kind of preferred structure of a kind of IGBT low pressure inverter of the present invention, wherein, the output of inversion module (5) adopts busbar connection segment mode, and this kind mode is so that the installation of IGBT and replacing are simpler, and the T-shape busbar of only dismantling the IGBT output gets final product.
A kind of preferred structure of a kind of IGBT low pressure inverter of the present invention, wherein, centrifugal blower (10) adopts withdrawable installation, and the installation and maintenance of this kind mode blower fan is simpler, and only the mounting screw of degree of tightness blower fan gets final product.
Description of drawings
Fig. 1 is front view of the present utility model.
Embodiment
As shown in Figure 1, a kind of IGBT low pressure inverter, comprise input terminal 1, dc capacitor 2, composite laminate bus 3, Absorption Capacitance 4, inversion module 5, inversion module radiator 6, grading resistor 7, current sensor 8, outlet terminal 9, centrifugal blower 10, input terminal 1 is arranged at the inverter top, sets gradually dc capacitor 2, Absorption Capacitance 4, inversion module 5, grading resistor 7, current sensor 8, outlet terminal 9, centrifugal blower 10 below input terminal 1 from top to bottom; A plurality of dc capacitors 2 are centralized and arrange, composite laminate bus 3 tightly is overlying on the dc capacitor 2, the input and output bus adopts the upper entering and lower leaving design, one end is the direct current input, one end is connected with the input of inversion module 5, composite laminate bus 3 adopts positive bus-bar, negative busbar, three layers of parallel stacked of neutral bus to form, and separates by insulating material between the adjacent two-layer bus.Inverter radiator 6 is arranged on the substrate of inversion module 5.Each inversion module radiator 6 all fits tightly with the substrate of inversion module 5.Grading resistor 7 fits tightly on inversion module radiator 6.Centrifugal blower 10 adopts single air channel mode that contrary inversion module radiator 6 is cooled off, and centrifugal blower 10 adopts withdrawable mounting means to install.
Above description is to explanation of the present utility model, is not the restriction to utility model, and the utility model limited range is referring to claim, in the situation that without prejudice to spirit of the present utility model, the utility model can be done any type of modification.
Claims (6)
1. IGBT low pressure inverter, it is characterized in that, comprising: input terminal (1), dc capacitor (2), composite laminate bus (3), Absorption Capacitance (4), inversion module (5), inversion module radiator (6), grading resistor (7), current sensor (8), outlet terminal (9), centrifugal blower (10); Input terminal (1) is arranged at the inverter top, sets gradually dc capacitor (2), Absorption Capacitance (4), inversion module (5), grading resistor (7), current sensor (8), outlet terminal (9), centrifugal blower (10) from top to bottom in the below of input terminal (1); Composite laminate bus (3) tightly is overlying on the dc capacitor (2), and composite laminate bus (3) one ends are direct current inputs, and an end is connected with the input of inversion module (5); The output of inversion module (5) adopts busbar connection segment mode; Inverter radiator (6) is arranged on the substrate of inversion module (5), centrifugal blower (10) adopts the blowing mode that inversion module radiator (6) is cooled off, each inversion module radiator (6) all fits tightly with the substrate of inversion module (5), and grading resistor (7) fits tightly on inversion module radiator (6).
2. a kind of IGBT low pressure inverter as claimed in claim 1 is characterized in that, centrifugal blower (10) adopts single air channel mode that inversion module radiator (6) is cooled off.
3. a kind of IGBT low pressure inverter as claimed in claim 2 is characterized in that, a plurality of dc capacitors (2) are centralized and arrange.
4. a kind of IGBT low pressure inverter as claimed in claim 3 is characterized in that, inversion module radiator (6) adopts monobasal blade inserting aluminium radiator.
5. a kind of IGBT low pressure inverter as claimed in claim 4 is characterized in that, composite laminate bus (3) adopts positive bus-bar, negative busbar, three layers of parallel stacked of neutral bus to form, and separates by insulating material between the adjacent two-layer bus.
6. a kind of IGBT low pressure inverter as claimed in claim 5 is characterized in that, the input and output bus adopts the upper entering and lower leaving design.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220334115 CN202696495U (en) | 2012-07-10 | 2012-07-10 | IGBT (insulated gate bipolar transistor) low-voltage inverter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220334115 CN202696495U (en) | 2012-07-10 | 2012-07-10 | IGBT (insulated gate bipolar transistor) low-voltage inverter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202696495U true CN202696495U (en) | 2013-01-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220334115 Expired - Lifetime CN202696495U (en) | 2012-07-10 | 2012-07-10 | IGBT (insulated gate bipolar transistor) low-voltage inverter |
Country Status (1)
| Country | Link |
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| CN (1) | CN202696495U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103260386A (en) * | 2013-05-15 | 2013-08-21 | 上海正泰电源系统有限公司 | Layout structure of high-power power electronic equipment |
| CN106208728A (en) * | 2016-08-12 | 2016-12-07 | 中国船舶重工集团公司第七〇二研究所 | A kind of air-cooled power model |
-
2012
- 2012-07-10 CN CN 201220334115 patent/CN202696495U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103260386A (en) * | 2013-05-15 | 2013-08-21 | 上海正泰电源系统有限公司 | Layout structure of high-power power electronic equipment |
| CN106208728A (en) * | 2016-08-12 | 2016-12-07 | 中国船舶重工集团公司第七〇二研究所 | A kind of air-cooled power model |
| CN106208728B (en) * | 2016-08-12 | 2018-12-04 | 中国船舶重工集团公司第七一二研究所 | A kind of air-cooled power module |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130123 |
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| CX01 | Expiry of patent term |