CN202674975U - Semiconductor light source and light emitting device - Google Patents
Semiconductor light source and light emitting device Download PDFInfo
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- CN202674975U CN202674975U CN2012203517707U CN201220351770U CN202674975U CN 202674975 U CN202674975 U CN 202674975U CN 2012203517707 U CN2012203517707 U CN 2012203517707U CN 201220351770 U CN201220351770 U CN 201220351770U CN 202674975 U CN202674975 U CN 202674975U
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 238000001228 spectrum Methods 0.000 claims description 42
- 230000003595 spectral effect Effects 0.000 claims description 39
- 230000003287 optical effect Effects 0.000 claims description 33
- 238000010606 normalization Methods 0.000 claims description 29
- 230000005540 biological transmission Effects 0.000 claims description 15
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 230000005284 excitation Effects 0.000 claims description 6
- 230000000737 periodic effect Effects 0.000 claims description 2
- 238000002834 transmittance Methods 0.000 description 4
- 238000003491 array Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004224 protection Effects 0.000 description 2
- 238000000411 transmission spectrum Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
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Abstract
The utility model discloses a semiconductor light source and a light emitting device. The semiconductor light source comprises a first laser diode group, a second laser diode group, a light emitting diode group, a first light combination device and a second light combination device. The first light combination device is used for combining light emitted by the first laser diode group with one part of wavelength light in light emitted by the light emitting diode group into one beam; the second light combination device is also used for combining the other part of wavelength light in the light emitted by the light emitting diode group with light emitted by the second laser diode group into one whole body; and emergent light of the semiconductor light source and exciting light in the light emitting device are formed by the two beams together, so that the high-efficiency mixed application of laser diodes and light emitting diodes is implemented.
Description
Technical field
The utility model relates to optical technical field, particularly relates to semiconductor light sources and light-emitting device.
Background technology
At present, semiconductor light sources more and more is subject to people's attention with characteristics such as its long-life and environmental protections.Semiconductor light sources is divided into light emitting diode (LED, light emitting diode) and laser diode (LD, laser diode) two kind, wherein light emitting diode has the low advantage of cost, it is too low that but its shortcoming is energy density, is not suitable for the occasion that high-end Projection Display, high brightness projecting lamp etc. are had relatively high expectations to energy density; And the characteristic of laser diode in contrast, because luminescence chip small-sized, simultaneously luminous angle is very narrow, so laser diode has the very high advantage of energy density, but laser diode fabrication process is complicated, so cost is very high.
For the occasion that requires high-energy-density, laser diode remains main flow as light source at present.Yet, still need in practice a kind of semiconductor light sources of low-cost high brightness.
The utility model content
The technical problem underlying that the utility model solves is the contradiction between semiconductor light sources high brightness and the low cost.
The utility model proposes a kind of semiconductor light sources, comprise the first laser diode group, this first laser diode group comprises at least one laser diode; Also comprise the second laser diode group, this second laser diode group comprises at least one laser diode; The normalization luminescent spectrum of the normalization luminescent spectrum of the second laser diode group and the first laser diode group does not exist overlapping; Also comprise the light emitting diode group, this light emitting diode group comprises at least one light emitting diode; The normalization luminescent spectrum of this light emitting diode group comprises the first SPECTRAL REGION and the second SPECTRAL REGION, wherein the normalization luminescent spectrum of the normalization luminescent spectrum of the first SPECTRAL REGION and the first laser diode group is overlapping and do not exist overlappingly with the normalization luminescent spectrum of the second laser diode, and the normalization luminescent spectrum of the normalization luminescent spectrum of the second SPECTRAL REGION and the second laser diode group is overlapping and do not exist overlapping with the normalization luminescent spectrum of the first laser diode group.
This semiconductor light sources also comprises the first Multiplexing apparatus.Luminous this first Multiplexing apparatus that is incident in respectively of the first laser diode group and light emitting diode group, this the first Multiplexing apparatus transmission first laser diode group is luminous and the first SPECTRAL REGION light emitting diode group is luminous, the second SPECTRAL REGION that reflects simultaneously the light emitting diode group is luminous, it is luminous luminous with the first SPECTRAL REGION light emitting diode group perhaps to reflect the first laser diode group, simultaneously the second SPECTRAL REGION of transmission light emitting diode group is luminous, is combined into a branch of formation the first light beam so that the second SPECTRAL REGION of the luminous and light emitting diode group of the first laser diode group is luminous.This semiconductor light sources also comprises the second Multiplexing apparatus.Luminous this second Multiplexing apparatus that is incident in respectively of and second laser diode group luminous by the first SPECTRAL REGION of the light emitting diode group of the first Multiplexing apparatus transmission or reflection, this the second Multiplexing apparatus transmission second laser diode group is luminous, and to reflect simultaneously the first SPECTRAL REGION of light emitting diode group luminous, makes the two be combined into a branch of formation the second light beam.The first light beam and the second light beam are combined into a branch of and form the emergent light of this semiconductor light sources.
The utility model also proposes a kind of light-emitting device, comprises the excitation source for generation of exciting light, and this excitation source comprises semiconductor light sources described above; Also comprise wavelength conversion layer, be used for absorbing exciting light and launching Stimulated Light.
In semiconductor light sources of the present utility model and light-emitting device, the luminous of light emitting diode group is divided into two zones at wavelength, these two zones luminous respectively with the first laser diode group and the second laser diode combined light, realized that the mixing of high efficiency laser diode and light emitting diode is used.
Description of drawings
Fig. 1 is the structural representation of semiconductor light sources of the present utility model;
Fig. 2 a is the luminescent spectrum of the first laser diode group in the utility model, the second laser diode group, light emitting diode group and the transmittance curve of the first Multiplexing apparatus and the second Multiplexing apparatus;
Fig. 2 b is the luminescent spectrum of the second SPECTRAL REGION of the first laser diode group, light emitting diode group in the utility model and the transmittance curve of the first Multiplexing apparatus;
Fig. 2 c is the luminescent spectrum of the first SPECTRAL REGION of the second laser diode group, light emitting diode group in the utility model and the transmittance curve of the second Multiplexing apparatus.
The specific embodiment
The optical texture schematic diagram of semiconductor light sources of the present utility model as shown in Figure 1.Wherein, semiconductor light sources 100 comprises the first laser diode group 101, and this first laser diode group comprises at least one laser diode; Also comprise the second laser diode group 102, this second laser diode group comprises at least one laser diode; The normalization luminescent spectrum of the normalization luminescent spectrum of the first laser diode group and the second laser diode group is expressed as 251 and 252 respectively in Fig. 2 a, both do not exist overlapping.
Semiconductor light sources 100 also comprises light emitting diode group 103, and this light emitting diode group 103 comprises at least one light emitting diode; The normalization luminescent spectrum of this light emitting diode group is expressed as 253 in Fig. 2, the spectrum 251 of spectrum 253 and the first laser diode group and the spectrum 252 of the second laser diode exist overlapping respectively.
Semiconductor light sources 100 also comprises the first Multiplexing apparatus 111.The first Multiplexing apparatus 111 is specially the first light splitting optical filter in the present embodiment, and the first Multiplexing apparatus 111 can also be other forms such as light-combining prism in actual applications, and the utility model is not done concrete restriction.In the present embodiment, the optical transmission spectra of the first light splitting optical filter 111 is expressed as 211 in Fig. 2 a and 2b.
In the present embodiment, luminous 151 of the first laser diode group 101 is incident in respectively the relative two sides of this first light splitting optical filter 111 with luminous 153 of light emitting diode group 103, this the first light splitting optical filter 111 transmissions first laser diode group luminous 151, simultaneously luminous 153 of light emitting diode group is divided into two bundles, a branch of transmission the first light splitting optical filter 111 forms light beam 153a, is a branch ofly reflected to form light beam 153b by the first light splitting optical filter 111.The spectrum that is appreciated that light beam 153a and 153b is different, is in different SPECTRAL REGIONs.The spectrum of light beam 153a is expressed as 253a in Fig. 2 c, be called the first SPECTRAL REGION, and the spectrum of light beam 153b is expressed as 253b in Fig. 2 b, is called the second SPECTRAL REGION.
Be appreciated that, the first SPECTRAL REGION of luminous 153 of light emitting diode group 103 and the position of the second SPECTRAL REGION specifically determine by the optical transmission spectra of the first light splitting optical filter 111, therefore can be by the spectrum design of the first light splitting optical filter being realized the control to the first SPECTRAL REGION and the second SPECTRAL REGION.In the present embodiment, because the luminescent spectrum 251 of the first laser diode group and the luminescent spectrum 252 of the second laser diode do not exist overlapping, both are overlapping with the luminescent spectrum 253 of light emitting diode group respectively again simultaneously, therefore necessarily can control by designing the first light splitting optical filter the position of the first SPECTRAL REGION and the second SPECTRAL REGION, make it satisfy following condition:
The normalization luminescent spectrum 251 of the normalization luminescent spectrum 253a of the first SPECTRAL REGION and the first laser diode group is overlapping and do not exist overlappingly with the normalization luminescent spectrum 252 of the second laser diode, and the normalization luminescent spectrum of the normalization luminescent spectrum 253b of the second SPECTRAL REGION and the second laser diode group 252 is overlapping and do not exist overlapping with the normalization luminescent spectrum 251 of the first laser diode group.
As shown in Figure 1, the luminous 153b in second wave length zone of light emitting diode group 103 is reflected in the first light splitting optical filter 111 transmissions the first laser diode group luminous 151 simultaneously, and the two is combined into a branch of formation the first light beam; The luminous 153a of the first wavelength region may of while the first light splitting optical filter 111 transmission light emitting diode groups 103.Be appreciated that, the first laser diode group 101 can be exchanged with the position of light emitting diode group 103 in the present embodiment, the first light splitting optical filter redesigns simultaneously the transmittance curve of the first light splitting optical filter 111 so that can reflect the luminous of the first laser diode group, the second wave length zone of simultaneously transmission light emitting diode group is luminous, the two is combined into a branch of; The first wavelength region may of simultaneously the first light splitting optical filter reflection light emitting diode group is luminous.
In semiconductor light sources 100, also comprise the second Multiplexing apparatus 112.Specifically, the second Multiplexing apparatus is the second light splitting optical filter in the present embodiment; In actual applications, similar to the first Multiplexing apparatus, the second Multiplexing apparatus also can have other way of realization.
In the present embodiment, be incident in respectively at the relative two sides of this second light splitting optical filter by the luminous 153a of the first SPECTRAL REGION of the light emitting diode group of 111 transmissions of the first Multiplexing apparatus or reflection and luminous 152 of the second laser diode group 102, this the second light splitting optical filter respectively transmission the second laser diode group luminous 152 reflects the luminous 153a of the first SPECTRAL REGION of light emitting diode group simultaneously, makes the two be combined into a branch of formation the second light beam.Shown in Fig. 2 c, be appreciated that since the normalization luminescent spectrum 251 of the normalization luminescent spectrum 253a of the first SPECTRAL REGION and the first laser diode group do not exist overlapping, so this second light splitting optical filter is easily design realization.The transmitance spectral line of the second light splitting optical filter is expressed as 212 in Fig. 2 a and 2c in the present embodiment.
Like this, the first light beam and the second light beam are combined into a branch of and form the emergent light of this semiconductor light sources 100.In semiconductor light sources of the present utility model, utilize the first Multiplexing apparatus that the luminous of light emitting diode group is divided into two zones at wavelength, utilize simultaneously the first Multiplexing apparatus and these two zones of the second Multiplexing apparatus luminous respectively with the first laser diode group and the second laser diode combined light, realized that the mixing of high efficiency laser diode and light emitting diode is used.
Preferably, maximum for the luminous intensity that makes semiconductor light sources 100, the first light beam and the second light beam adjoin each other.In order to achieve this end, at first need the first light splitting optical filter 111 and the second light splitting optical filter 112 to be parallel to each other, can guarantee that like this first light beam and the second light beam have the light emission direction that is parallel to each other.Then need on the other hand to control the size of the first light splitting optical filter and the second light splitting optical filter so that it just can cover the light beam scope of the first laser diode group, the second laser diode group and light emitting diode group.
In the present embodiment, the first laser diode group can include only a laser diode, also can comprise many laser diodes, and these many laser diodes form arrays, it is luminous can form a branch of.As a same reason, the second laser diode group and light emitting diode group can include only respectively a laser diode and light emitting diode, also can comprise respectively light emitting array and many light emitting arrays that light emitting diode consists of that many laser diodes consist of.
As another embodiment of the present utility model, the utility model also proposes a kind of light-emitting device, comprises the excitation source for generation of exciting light, and this excitation source comprises semiconductor light sources described above; Also comprise wavelength conversion layer, be used for absorbing exciting light and launching Stimulated Light.
In order to reduce the operating temperature of this wavelength conversion layer, preferred, this light-emitting device also comprises drive unit, is used for driving wavelength conversion layer and makes itself and exciting light periodic relative motion.
The above only is embodiment of the present utility model; be not so limit claim of the present utility model; every equivalent structure or equivalent flow process conversion that utilizes the utility model specification and accompanying drawing content to do; or directly or indirectly be used in other relevant technical fields, all in like manner be included in the scope of patent protection of the present utility model.
Claims (10)
1. a semiconductor light sources is characterized in that, comprising:
The first laser diode group, this first laser diode group comprises at least one laser diode;
The second laser diode group, this second laser diode group comprises at least one laser diode; The normalization luminescent spectrum of the normalization luminescent spectrum of the second laser diode group and the first laser diode group does not exist overlapping;
The light emitting diode group, this light emitting diode group comprises at least one light emitting diode; The normalization luminescent spectrum of this light emitting diode group comprises the first SPECTRAL REGION and the second SPECTRAL REGION, wherein the normalization luminescent spectrum of the normalization luminescent spectrum of the first SPECTRAL REGION and described the first laser diode group is overlapping and do not exist overlappingly with the normalization luminescent spectrum of described the second laser diode, and the normalization luminescent spectrum of the normalization luminescent spectrum of the second SPECTRAL REGION and described the second laser diode group is overlapping and do not exist overlapping with the normalization luminescent spectrum of described the first laser diode group;
The first Multiplexing apparatus; Luminous this first Multiplexing apparatus that is incident in respectively of the first laser diode group and light emitting diode group, this the first Multiplexing apparatus transmission first laser diode group is luminous and the first SPECTRAL REGION light emitting diode group is luminous, the second SPECTRAL REGION that reflects simultaneously the light emitting diode group is luminous, it is luminous luminous with the first SPECTRAL REGION light emitting diode group perhaps to reflect the first laser diode group, simultaneously the second SPECTRAL REGION of transmission light emitting diode group is luminous, is combined into a branch of formation the first light beam so that the second SPECTRAL REGION of the luminous and light emitting diode group of the first laser diode group is luminous;
The second Multiplexing apparatus; Luminous this second Multiplexing apparatus that is incident in respectively of and second laser diode group luminous by the first SPECTRAL REGION of the light emitting diode group of the first Multiplexing apparatus transmission or reflection, this the second Multiplexing apparatus transmission second laser diode group is luminous, and to reflect simultaneously the first SPECTRAL REGION of light emitting diode group luminous, makes the two be combined into a branch of formation the second light beam;
Described the first light beam and the second light beam are combined into a branch of and form the emergent light of this semiconductor light sources.
2. a kind of semiconductor light sources according to claim 1 is characterized in that, described the first Multiplexing apparatus is the first light splitting optical filter, and described the second Multiplexing apparatus is the second light splitting optical filter.
3. a kind of semiconductor light sources according to claim 2 is characterized in that, described the first light splitting optical filter and the second light splitting optical filter are parallel to each other.
4. a kind of semiconductor light sources according to claim 2 is characterized in that, the size of described the first light splitting optical filter and the second light splitting optical filter just covers the light beam scope of described the first laser diode group, the second laser diode group and light emitting diode group.
5. a kind of semiconductor light sources according to claim 1 is characterized in that, described the first light beam and the second light beam adjoin each other.
6. a kind of semiconductor light sources according to claim 1 is characterized in that, described the first laser diode group comprises many laser diodes, and these many laser diodes form array.
7. a kind of semiconductor light sources according to claim 1 is characterized in that, described the second laser diode group comprises many laser diodes, and these many laser diodes form array.
8. a kind of semiconductor light sources according to claim 1 is characterized in that, described light emitting diode group comprises many light emitting diodes, and these many light emitting diodes form array.
9. a light-emitting device is characterized in that, comprising:
For generation of the excitation source of exciting light, this excitation source comprises such as the described semiconductor light sources of claim 1 to 8; Wavelength conversion layer is used for absorbing described exciting light and launching Stimulated Light.
10. a kind of light-emitting device according to claim 9 is characterized in that, also comprises drive unit, is used for driving described wavelength conversion layer and makes itself and described exciting light periodic relative motion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012203517707U CN202674975U (en) | 2012-07-19 | 2012-07-19 | Semiconductor light source and light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012203517707U CN202674975U (en) | 2012-07-19 | 2012-07-19 | Semiconductor light source and light emitting device |
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| Publication Number | Publication Date |
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| CN202674975U true CN202674975U (en) | 2013-01-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2012203517707U Expired - Lifetime CN202674975U (en) | 2012-07-19 | 2012-07-19 | Semiconductor light source and light emitting device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104200780A (en) * | 2014-08-28 | 2014-12-10 | 京东方科技集团股份有限公司 | Display system |
| WO2016161933A1 (en) * | 2015-04-09 | 2016-10-13 | 深圳市光峰光电技术有限公司 | Projection display system and control method therefor |
-
2012
- 2012-07-19 CN CN2012203517707U patent/CN202674975U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104200780A (en) * | 2014-08-28 | 2014-12-10 | 京东方科技集团股份有限公司 | Display system |
| WO2016161933A1 (en) * | 2015-04-09 | 2016-10-13 | 深圳市光峰光电技术有限公司 | Projection display system and control method therefor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20171115 Address after: 518055 Guangdong city of Shenzhen province Nanshan District Xili town tea light road Shenzhen city integrated circuit design and application of Industrial Park 401 Patentee after: APPOTRONICS Corp.,Ltd. Address before: 518057, Guangdong, Nanshan District Shenzhen science and Technology Park, South Road, twelve square building, third floor Patentee before: YLX Inc. |
|
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 518000 Nanshan District, Shenzhen, Guangdong, Guangdong Province, Guangdong Road, 63 Xuefu Road, high-tech zone, 21 headquarters building, 22 floor. Patentee after: SHENZHEN GUANGFENG TECHNOLOGY Co.,Ltd. Address before: 518055 Guangdong province Shenzhen Nanshan District Xili town Cha Guang road Shenzhen integrated circuit design application Industrial Park 401 Patentee before: APPOTRONICS Corp.,Ltd. Address after: 518000 20-22, 20-22 headquarters building, 63 high tech Zone, Xuefu Road, Nanshan District, Guangdong Province, Guangdong. Patentee after: APPOTRONICS Corp.,Ltd. Address before: 518000 Nanshan District, Shenzhen, Guangdong, Guangdong Province, Guangdong Road, 63 Xuefu Road, high-tech zone, 21 headquarters building, 22 floor. Patentee before: SHENZHEN GUANGFENG TECHNOLOGY Co.,Ltd. |
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| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130116 |