CN202633358U - Ultraviolet-visible photoelectric detector with quantum dot structure - Google Patents
Ultraviolet-visible photoelectric detector with quantum dot structure Download PDFInfo
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- CN202633358U CN202633358U CN 201120542085 CN201120542085U CN202633358U CN 202633358 U CN202633358 U CN 202633358U CN 201120542085 CN201120542085 CN 201120542085 CN 201120542085 U CN201120542085 U CN 201120542085U CN 202633358 U CN202633358 U CN 202633358U
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Abstract
The utility model discloses an ultraviolet-visible light photoelectric detector with a quantum dot structure. The structure is a multi-layer structure of combining the quantum dots and homojunction, which comprises a transparent conductive layer, an intrinsic ZnO layer, a ZnO:Cu compensation layer and a metal electrode layer from the substrate top to up. The intrinsic ZnO layer and the ZnO: Cu compensating layer are obtained by spirally coating nanocrystalline and annealing, a certain section of the transparent conductive layer is then etched and exposed via a photoetching way, and the top metal electrode layer is obtained by evaporation and deposition of electron beams, and ohmic contact is obtained after rapid thermal annealing treatment. The ultraviolet-visible light photoelectric detector with the quantum dot structure has the advantages that the production cost is comparatively low, planar printing technology can be well compatible, a lower dark current is provided and photoelectric response performance can be effectively improved.
Description
Technical field:
The utility model relates to field of photodetectors, a kind of specifically quantum-dot structure ultraviolet-visible photodetector.
Background technology:
The room temperature optical band gap of ZnO material correspondence has good response characteristic at 3.37eV to ultraviolet band, therefore it is believed that it is the preferred basic material of ultraviolet detector.Active layer ZnO present stage in the photodetector is more depends on the high-vacuum apparatus growth, and technology is loaded down with trivial details, cost is high.Researching and developing new growing method and technology also is trend of the times.The fine planographic technology that is compatible with of colloid chemistry method ability, substrate is chosen variation, need not to consider the matching problem of lattice, and convenient deposition and the processing that realizes material greatly reduces the device development cost, has widened the range of application of material.Research shows; Cu is a kind of visible light photoconduction activator in ZnO, can effectively compensate the donor state among the intrinsic ZnO, reduces dark current density; Can realize the response respectively of different-waveband again, significant to the zno-based photodetector of exploitation multiband response.At present, this respect research still is in the starting stage, although Nikolai Kouklin has prepared the Cu doped ZnO nano-wire and realized the response to visible light, the solid solubility of Cu is not high enough, and response characteristics to light and device sensitivity are still waiting to promote.Utilize the advantage of colloid chemistry method on structural design; Quantum dot and homojunction combined construct three-dimensional junction type photodetector; Can not only improve the internal quantum efficiency of device, and can effectively reduce cost, demonstrate fully the innovation of this technical concept and the advantage on the performance.Design about this structure detector also rarely has report in the world with preparation, and carrying out this respect work certainly will be highly significant.
The utility model content:
The purpose of the utility model just provides a kind of quantum-dot structure ultraviolet-visible photodetector, improves the internal quantum efficiency of device, and can effectively reduce cost.
The technical scheme that the utility model adopts is:
Quantum-dot structure ultraviolet-visible photodetector: the whole sandwich style sandwich construction that adopts.Have conductive substrates, said conductive substrates, for covering transparency conducting layer on the substrate, transparency conducting layer is as hearth electrode; On conductive substrates, be disposed with intrinsic ZnO layer and ZnO:Cu layer of compensation from bottom to top, deposit top electrode on the ZnO:Cu layer of compensation.
The Cu molar percentage of ZnO:Cu layer of compensation is adjustable continuously in 0～4.0 % scope, can obtain different n type compensating coefficients.
It is a three-dimensional structure.
Be the homojunction contact between ZnO layer and the ZnO:Cu layer of compensation.
The backing material that is adopted is unrestricted, as long as enough smooth, all can adopt planographic technology to apply active ZnO layer and ZnO:Cu layer of compensation.
Described hearth electrode can be ITO, mixes Al's or mixes the n-ZnO transparent conductive film of Ga, and top electrode is Ni/Au or Ti/Au alloy.
Can survey ultraviolet and visible light simultaneously, and have different response effects.
Compared with prior art, the beneficial effect of the utility model is:
The utility model adopts quantum dot and homojunction structure combining; Can improve the internal quantum efficiency of photodetector, and device construct with low cost, the fine planographic technology that is compatible with; Have lower dark current simultaneously, improved photoelectric response performance effectively.
Description of drawings:
Accompanying drawing 1 is the utility model structural representation.
Embodiment:
Below in conjunction with accompanying drawing, the utility model is done further explain through embodiment:
Quantum-dot structure ultraviolet-visible photodetector: the whole sandwich style sandwich construction that adopts.Have conductive substrates, said conductive substrates, for covering transparency conducting layer 2 on the substrate 1, transparency conducting layer 2 is as hearth electrode; On conductive substrates, be disposed with intrinsic ZnO layer 3 and ZnO:Cu layer of compensation 4 from bottom to top, deposit top electrode 5 on the ZnO:Cu layer of compensation 4.The Cu molar percentage of ZnO:Cu layer of compensation 4 is adjustable continuously in 0～4.0 % scope, can obtain different n type compensating coefficients.It is a three-dimensional structure.Be the homojunction contact between ZnO layer 3 and the ZnO:Cu layer of compensation 4.Substrate 1 material that is adopted is unrestricted, as long as enough smooth, all can adopt planographic technology to apply active ZnO layer and ZnO:Cu layer.Hearth electrode can be ITO, mixes Al's or mixes the n-ZnO transparent conductive film of Ga, and top electrode 5 is Ni/Au or Ti/Au alloy.Can survey ultraviolet and visible light simultaneously, and have different response effects.
Be prepared as example with ZnO-ZnO:Cu homogeneity junction type ultraviolet-visible light electric explorer:
1) the colloid chemistry method prepares ZnO and ZnO:Cu quantum dot.With Zn (CH
3COO)
2And Cu (CH
3COO)
2(1:0 ~ 0.96:0.04) fully be dissolved in the methyl alcohol in molar ratio; Add deionized water as catalyst for reaction, 60 ℃ of following water-baths refluxed 30 minutes, obtained precursor solution; KOH methanol solution with 0.167mol/L drops in the above-mentioned precursor solution again, control Zn (CH
3COO)
2And Cu (CH
3COO) mixture and the mol ratio of KOH are 1:1.67 ~ 1:2,60 ℃ of following water-baths 2.5 hours, with the frozen water cooling, the methyl alcohol centrifuge washing, ZnO and ZnO:Cu quantum dot deposition;
2) in the above-mentioned quantum dot deposition that makes, adding chloroform respectively fully dissolves it; Add the n-octyl amine dispersant then respectively; Shake up, obtain ZnO and ZnO:Cu colloid quantum dot solution, the PTFE filter in each personal 0.22 μ m aperture filters then; ZnO and ZnO:Cu colloid quantum dot solution after will filtering with the rotating speed of 2000 ~ 4000rpm are spin-coated on the ITO substrate that cleaned successively; After 80 ℃ of prebakes, in 250 ℃ of following air, annealed 1 ~ 2 hour, obtain the quantum dot homojunction film that thickness is about 200nm;
Use the alloy firm of electron beam evaporation technique pattern sedimentation Ni (5nm)/Au (45nm) on the ZnO:Cu layer, expose the ITO electrode in the method etching of sandwich construction surface by utilizing photoetching afterwards.
The foregoing description is merely the preferred implementation of the utility model, and in addition, the utility model can also have other implementations.Need to prove that under the prerequisite that does not break away from the utility model design, any conspicuous improvement and modification all should fall within the protection range of the utility model.
Claims (3)
1. quantum-dot structure ultraviolet-visible photodetector is characterized in that: the whole sandwich style sandwich construction that adopts, have conductive substrates, and said conductive substrates, for covering transparency conducting layer on the substrate, transparency conducting layer is as hearth electrode; On conductive substrates, be disposed with intrinsic ZnO layer and ZnO:Cu layer of compensation from bottom to top, deposit top electrode on the ZnO:Cu layer of compensation.
2.
According toThe described photodetector of claim 1 is characterized in that: be the homojunction contact between ZnO layer and the ZnO:Cu layer of compensation.
3.
According toThe described photodetector of claim 1, it is characterized in that: the backing material that is adopted is unrestricted, as long as enough smooth, all can adopt planographic technology to apply active ZnO layer and ZnO:Cu layer of compensation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120542085 CN202633358U (en) | 2011-12-22 | 2011-12-22 | Ultraviolet-visible photoelectric detector with quantum dot structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120542085 CN202633358U (en) | 2011-12-22 | 2011-12-22 | Ultraviolet-visible photoelectric detector with quantum dot structure |
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| Publication Number | Publication Date |
|---|---|
| CN202633358U true CN202633358U (en) | 2012-12-26 |
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| CN 201120542085 Expired - Fee Related CN202633358U (en) | 2011-12-22 | 2011-12-22 | Ultraviolet-visible photoelectric detector with quantum dot structure |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103400900A (en) * | 2013-08-08 | 2013-11-20 | 扬州大学 | ZnO quantum dot-based deep UV sensor and preparation method thereof |
| CN106711283A (en) * | 2016-12-27 | 2017-05-24 | 南京理工大学 | Manufacturing method of all-print zinc oxide nanocrystalline based ultraviolet photoelectric detector |
| US9806125B2 (en) | 2015-07-28 | 2017-10-31 | Carrier Corporation | Compositionally graded photodetectors |
| US9865766B2 (en) | 2015-07-28 | 2018-01-09 | Carrier Corporation | Ultraviolet photodetectors and methods of making ultraviolet photodetectors |
| US9928727B2 (en) | 2015-07-28 | 2018-03-27 | Carrier Corporation | Flame detectors |
| US10126165B2 (en) | 2015-07-28 | 2018-11-13 | Carrier Corporation | Radiation sensors |
| CN109225297A (en) * | 2018-09-29 | 2019-01-18 | 台州学院 | A kind of composite catalyst QDs-SISCN and its preparation method and application |
| US10236400B2 (en) | 2016-02-01 | 2019-03-19 | Heptagon Micro Optics Pte. Ltd. | Quantum dot film based demodulation structures |
-
2011
- 2011-12-22 CN CN 201120542085 patent/CN202633358U/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103400900A (en) * | 2013-08-08 | 2013-11-20 | 扬州大学 | ZnO quantum dot-based deep UV sensor and preparation method thereof |
| CN103400900B (en) * | 2013-08-08 | 2017-05-31 | 扬州大学 | ZnO quantum dot base deep UV sensor and preparation method |
| US9806125B2 (en) | 2015-07-28 | 2017-10-31 | Carrier Corporation | Compositionally graded photodetectors |
| US9865766B2 (en) | 2015-07-28 | 2018-01-09 | Carrier Corporation | Ultraviolet photodetectors and methods of making ultraviolet photodetectors |
| US9928727B2 (en) | 2015-07-28 | 2018-03-27 | Carrier Corporation | Flame detectors |
| US10126165B2 (en) | 2015-07-28 | 2018-11-13 | Carrier Corporation | Radiation sensors |
| US10718662B2 (en) | 2015-07-28 | 2020-07-21 | Carrier Corporation | Radiation sensors |
| US11029202B2 (en) | 2015-07-28 | 2021-06-08 | Carrier Corporation | Radiation sensors |
| US10236400B2 (en) | 2016-02-01 | 2019-03-19 | Heptagon Micro Optics Pte. Ltd. | Quantum dot film based demodulation structures |
| CN106711283A (en) * | 2016-12-27 | 2017-05-24 | 南京理工大学 | Manufacturing method of all-print zinc oxide nanocrystalline based ultraviolet photoelectric detector |
| CN106711283B (en) * | 2016-12-27 | 2019-05-24 | 南京理工大学 | A kind of all print zinc oxide nanocrystalline base ultraviolet light electric explorer preparation method |
| CN109225297A (en) * | 2018-09-29 | 2019-01-18 | 台州学院 | A kind of composite catalyst QDs-SISCN and its preparation method and application |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121226 Termination date: 20161222 |