CN103400900A - ZnO quantum dot-based deep UV sensor and preparation method thereof - Google Patents
ZnO quantum dot-based deep UV sensor and preparation method thereof Download PDFInfo
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- CN103400900A CN103400900A CN2013103468860A CN201310346886A CN103400900A CN 103400900 A CN103400900 A CN 103400900A CN 2013103468860 A CN2013103468860 A CN 2013103468860A CN 201310346886 A CN201310346886 A CN 201310346886A CN 103400900 A CN103400900 A CN 103400900A
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 42
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 9
- 239000000843 powder Substances 0.000 claims description 6
- 238000003756 stirring Methods 0.000 claims description 6
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract description 65
- 238000000034 method Methods 0.000 abstract description 8
- 230000004044 response Effects 0.000 abstract description 8
- 230000003287 optical effect Effects 0.000 abstract description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 2
- 238000003795 desorption Methods 0.000 abstract description 2
- 229910052760 oxygen Inorganic materials 0.000 abstract description 2
- 239000001301 oxygen Substances 0.000 abstract description 2
- 230000000630 rising effect Effects 0.000 abstract description 2
- 238000001179 sorption measurement Methods 0.000 abstract description 2
- 238000001228 spectrum Methods 0.000 abstract description 2
- 230000004043 responsiveness Effects 0.000 abstract 1
- 239000011787 zinc oxide Substances 0.000 description 29
- 230000004888 barrier function Effects 0.000 description 7
- 238000013461 design Methods 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 238000011896 sensitive detection Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 238000001338 self-assembly Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002127 nanobelt Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- -1 nanometer rods Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000000825 ultraviolet detection Methods 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention relates to a ZnO quantum dot-based deep UV sensor and a preparation method thereof. A superfine ZnO quantum dot network structure serves as an active photoelectric response layer; the ZnO quantum dot-based deep UV sensor is prepared after the preparation of ZnO quantum dots. In the prior art, the switching of photocurrent is very slow due to oxygen adsorption and desorption generating on the surface of ZnO, and an effective Schottky-barrier is difficult to be designed in a device. The novel ZnO quantum dot-based deep UV sensor is designed through a simple and low-cost self-assembling process has the advantages that the problems in the prior art are solved; the spectrum selectivity is high; the optical switch action is stable; the photocurrent responsiveness is high; the response speed is high; the photocurrent switching characteristic is remarkable, fast and stable; the photocurrent on-off ratio is larger than 103; both the photocurrent rising time and decaying time are shorter than 1s; the response speed of the UV sensor is increased.
Description
Technical field
The invention belongs to field of functional materials, particularly ZnO quantum dot base deep ultraviolet transducer and preparation method.
Background technology
Ultraviolet (UV) senser element has demand widely in industry and scientific domain, as there is direct application prospect in monitoring, surround lighting detection and the fields such as optical switch and optical communication at thermal-flame, guided missile flame plumage.Zinc oxide (ZnO) is as a typical wide bandgap semiconductor (E
g～3.4eV), it has exciton bind energy (E preferably
b～60meV), be one of the ideal material of exploitation UV detector.In recent years, because monodimension nanometer material has natural electron propagation ducts and larger specific area, the 1-dimention nano building blocks such as ZnO nano-wire, nanometer rods, nanobelt are widely used in designing the UV detector.Yet, in the 1-dimention nano UV of ohmic contact sensitive detection parts, the time of photoelectric respone usually needs several seconds to a few minutes hundreds of minute even, because the process of the oxygen adsorption and desorption that the switch of photoelectric current occurs based on the ZnO surface is very slow.Study and show recently, the Schottky barrier formed between ZnO nano-structure and electrode can improve the rate of decay of photoelectric current in the speed of photoelectric respone, especially recovery process effectively.But an effective Schottky barrier of design remains a difficult task in device.As everyone knows, there is junction barrier between particle in continuous membrana granulosa, they are equivalent to the transmission that isotropic Schottky barrier hampers electronics, and its barrier height is sensitive to photoproduction carrier concentration fast, and the electricity that therefore such junction barrier is being dominated membrana granulosa is led and photoelectric respone.
Summary of the invention
The object of the invention is to overcome above-mentioned defect, development ZnO quantum dot base deep ultraviolet transducer production method.
Technical scheme of the present invention is:
ZnO quantum dot base deep ultraviolet transducer, its technical characteristics is to utilize the active layer of ultra-fine ZnO quantum dot network configuration as photoelectric respone.
Another technical scheme of the present invention is:
ZnO quantum dot base deep ultraviolet transducer production method, its major technique step is:
The preparation of ZnO quantum dot:
(1) by Zn (CH
3cOO)
22H
2the O powder joins in absolute dry ethanolic solution, this solution is continuously stirring under 80 ℃ to abundant dissolving, with ice bath, this solution is cooled to 0 ℃;
(2) by LiOHH
2the O powder ultrasonic is dissolved in absolute dry ethanolic solution, prepares uniform LiOH solution;
(3) LiOH solution step (2) obtained is dropwise added the Zn (CH that step (1) obtains lentamente
3cOO)
2ethanolic solution in, reaction under 0 ℃, be aided with that magnetic stirs and N
2the protection of air-flow;
(4) obtain ZnO quantum dot solution, in absolute dry ethanol and be placed in below 0 ℃ and preserve; The preparation of transducer:
(5) the Au interdigital electrode is put into to the ethanolic solution of the ZnO quantum dot that step (4) obtains;
(6) then in this solution, dropwise add normal heptane, ZnO quantum dot overflows gradually and is deposited on the Au interdigital electrode;
(7) after abundant deposition, the Au interdigital electrode that deposits ZnO quantum dot is proposed, and at N
2lower cool drying.
The ZnO quantum dot base Ultraviolet sensor of the present invention's design has following advantage: 1. process units is simple, and techniqueflow is simple and easy, with low cost, but mass and industrialization; 2. have significant, quick and stable photoelectric current switching characteristic: the photoelectric current on-off ratio is greater than 10
3, photoelectric current rises and all is less than 1s die-away time; 3. have light wave selectivity higher and that have more meaning, the deep UV that only wavelength is less than to 340nm has significant response.
The present invention adopts easily, self-assembly process has designed the novel deep ultraviolet sensitive detection parts based on ZnO quantum dot cheaply, it shows high spectral selection, stable optical switch behavior, high photocurrent response degree and response speed fast, has improved the response speed of UV detector.
The accompanying drawing explanation
Fig. 1---the building process schematic diagram of ZnO quantum dot base Ultraviolet sensor self assembly in the present invention.
Fig. 2---the I-V curve synoptic diagram of ZnO quantum dot base Ultraviolet sensor under the UV-irradiation of ambient white light, 355nm and 325nm of the present invention's design; Wherein, the I-V curve table funerary objects part of Fig. 2 (a) neutral line symmetry presents ohmic contact, and photoelectric current only just has significant enhancing under the deep ultraviolet of 325nm irradiates, illustrate that device is more responsive to deep UV (ultraviolet light), there is light wave selectivity higher, that have more meaning; Fig. 2 (b) has shown the I-V curve in logarithmic coordinates system, more clearly shows that the on-off ratio of photoelectric current is higher than 10
3, and rely on and bias voltage (0.1～5V) hardly.
Fig. 3---the ZnO quantum dot base Ultraviolet sensor of the present invention's design is at 325nm ultraviolet irradiation (22.9mW/cm
2) and the 5V bias voltage under time-resolved photoelectric respone curve synoptic diagram; Wherein, Fig. 3 (a) has shown that device has the behavior of stable, quick and significant photoelectric current switch; Rising and the attenuation process of Fig. 3 (b) display light electric current meet the second order exponential fitting, and corresponding time index is about respectively 0.8s and 0.5s.
Embodiment
Technical thought of the present invention is:
Utilize the ZnO quantum dot network to build UV sensitive detection parts as construction module, wish to utilize the junction barrier between quantum dot to improve the speed of UV photoelectric respone.In addition, ZnO quantum dot also has two other advantage as building block: 1. extra small quantum dot has strong quantum size effect, its band gap is by broadening widely, can further dwindle the wavelength of response spectrum, improve the spectral selection of surveying, and because darker ultraviolet irradiation has larger harm to living things system, so the deep ultraviolet detection has more meaning; 2. quantum dot has very large absorption coefficient and high specific area, can further improve the area that enlivens of the efficiency of light absorption of device and photoelectric respone.
Front is that concrete preparation scheme of the present invention is divided into two steps:
The preparation method of first step ZnO quantum dot, its preparation process is as follows:
By 2.18g (10mmol) Zn (CH
3cOO)
22H
2the O powder joins in the absolute dry ethanolic solution of 100mL, by solution 80 ℃ of lower continuous stirring 3 hours to guarantee abundant dissolving.Then, with ice bath, solution is cooled to 0 ℃.Simultaneously, by 0.59g (14mmol) LiOHH
2the O powder ultrasonic is dissolved in the absolute dry ethanol of 100mL, prepares uniform L.OH solution.The LiOH solution prepared is dropwise added to above-mentioned Zn (CH lentamente
3cOO)
2ethanolic solution in, reaction is carried out 2 hours under 0 ℃, and stirs and N with violent magnetic
2the protection of air-flow.Finally, the ZnO quantum dot solution of acquisition is water white, utilizes ethanol and hexane to replace centrifuge washing 6 times to remove residual reagent and impurity group, again is dispersed in absolute ethanol by the ZnO quantum dot of washing and is placed in below 0 ℃ and preserve.
The structure of second step device, its preparation process is as follows:
The Au interdigital electrode low price deposited on ceramic substrate by easy batch typography. and convenient the purchase, raceway groove is got over the Au interdigital electrode of 180nm, this interdigital electrode is put into to the ethanolic solution of the ZnO quantum dot prepared, then dropwise add normal heptane in solution, under the ultra violet lamp of 254nm, the ZnO quantum dot of bluish-green fluorescence overflows gradually and is deposited on the Au interdigital electrode, after the abundant deposition of 10 minutes, with syringe, the water white transparency of solution top is partly extracted, the Au interdigital electrode that will deposit lentamente ZnO quantum dot proposes, and at N
2lower cool drying, obtain ZnO quantum dot base deep ultraviolet transducer, thereby make, can utilize the active layer of ultra-fine ZnO quantum dot network configuration as photoelectric respone.
As can be seen here, preparation method of the present invention has uniqueness, and the method under it inspires should all be considered to the protection range that the present invention looks for, i.e. the protection range that the present invention requires is not limited to the description of this embodiment.
Claims (2)
1.ZnO quantum dot-based deep ultraviolet transducer, is characterized in that utilizing the active layer of ultra-fine ZnO quantum dot network configuration as photoelectric respone.
2. ZnO quantum dot base deep ultraviolet transducer production method according to claim 1, its step is: the preparation of ZnO quantum dot:
(1) by Zn (CH
3cOO)
22H
2the O powder joins in absolute dry ethanolic solution, this solution is continuously stirring under 80 ℃ to abundant dissolving, with ice bath, this solution is cooled to 0 ℃;
(2) by LiOHH
2the O powder ultrasonic is dissolved in absolute dry ethanolic solution, prepares uniform LiOH solution; (3) LiOH solution step (2) obtained is dropwise added the Zn (CH that step (1) obtains lentamente
3cOO)
2ethanolic solution in, reaction under 0 ℃, be aided with that magnetic stirs and N
2the protection of air-flow;
(4) obtain ZnO quantum dot solution, in absolute dry ethanol and be placed in below 0 ℃ and preserve; The preparation of transducer:
(5) the Au interdigital electrode is put into to the ethanolic solution of the ZnO quantum dot that step (4) obtains;
(6) then in this solution, dropwise add normal heptane, ZnO quantum dot overflows gradually and is deposited on the Au interdigital electrode;
(7) after abundant deposition, the Au interdigital electrode that deposits ZnO quantum dot is proposed, and at N
2lower cool drying.
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|---|---|---|---|
| CN201310346886.0A CN103400900B (en) | 2013-08-08 | 2013-08-08 | ZnO quantum dot base deep UV sensor and preparation method |
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| Publication Number | Publication Date |
|---|---|
| CN103400900A true CN103400900A (en) | 2013-11-20 |
| CN103400900B CN103400900B (en) | 2017-05-31 |
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ID=49564488
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106711283A (en) * | 2016-12-27 | 2017-05-24 | 南京理工大学 | Manufacturing method of all-print zinc oxide nanocrystalline based ultraviolet photoelectric detector |
| CN109935701A (en) * | 2017-12-15 | 2019-06-25 | Tcl集团股份有限公司 | A kind of composite membrane and the preparation method and application thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012033097A1 (en) * | 2010-09-06 | 2012-03-15 | 有限会社マイテック | Method for producing metal complex quantum crystals |
| CN102703061A (en) * | 2012-05-28 | 2012-10-03 | 扬州大学 | Method for performing fluorescent anti-counterfeit by ZnO quantum dots |
| CN202633358U (en) * | 2011-12-22 | 2012-12-26 | 安徽康蓝光电股份有限公司 | Ultraviolet-visible photoelectric detector with quantum dot structure |
-
2013
- 2013-08-08 CN CN201310346886.0A patent/CN103400900B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012033097A1 (en) * | 2010-09-06 | 2012-03-15 | 有限会社マイテック | Method for producing metal complex quantum crystals |
| CN202633358U (en) * | 2011-12-22 | 2012-12-26 | 安徽康蓝光电股份有限公司 | Ultraviolet-visible photoelectric detector with quantum dot structure |
| CN102703061A (en) * | 2012-05-28 | 2012-10-03 | 扬州大学 | Method for performing fluorescent anti-counterfeit by ZnO quantum dots |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106711283A (en) * | 2016-12-27 | 2017-05-24 | 南京理工大学 | Manufacturing method of all-print zinc oxide nanocrystalline based ultraviolet photoelectric detector |
| CN106711283B (en) * | 2016-12-27 | 2019-05-24 | 南京理工大学 | A kind of all print zinc oxide nanocrystalline base ultraviolet light electric explorer preparation method |
| CN109935701A (en) * | 2017-12-15 | 2019-06-25 | Tcl集团股份有限公司 | A kind of composite membrane and the preparation method and application thereof |
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| CN103400900B (en) | 2017-05-31 |
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Effective date of registration: 20231206 Address after: Room 2111, entrepreneurship service center, 217 Kaifa West Road, Yangzhou hi tech Industrial Development Zone, Jiangsu Province 225000 Patentee after: Jiangsu Maopeng new energy Co.,Ltd. Address before: 225009 No. 88, South University Road, Jiangsu, Yangzhou Patentee before: YANGZHOU University |
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