CN202633250U - Top improving ring and etching cavity - Google Patents
Top improving ring and etching cavity Download PDFInfo
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- CN202633250U CN202633250U CN 201220293484 CN201220293484U CN202633250U CN 202633250 U CN202633250 U CN 202633250U CN 201220293484 CN201220293484 CN 201220293484 CN 201220293484 U CN201220293484 U CN 201220293484U CN 202633250 U CN202633250 U CN 202633250U
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- ring
- improved
- etching
- annular body
- utility
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Abstract
The utility model discloses a top improving ring, which comprises a ring-shaped body, and ring-shaped recesses are respectively formed at the inside ends of the upper and the lower surfaces of the ring-shaped body. The utility model also discloses an etching cavity comprising a cavity as well as a static electricity chuck, a bottom insulation ring and the top improving ring which are arranged in the cavity; and the static electricity chuck is provided with a middle part which protruds upwards, and sequentially penetrates the bottom insulation ring and the top improving ring from down to up, and the etching cavity adopts the top improving ring. Through the ring-shaped recesses are respectively formed on the inner sides of the upper and the lower surfaces of the ring-shaped body, when the upper surface or the lower surface of the ring-shaped body is thinned, or the surface of the ring-shaped body is roughened or provided with a small groove due to influence of an etching process, further, the ring-shaped body cannot be continuously used, but the opposite face of the top improving ring can be continuously used, therefore, on the premise of not affecting functions of the ring, the service life of the top improving ring is prolonged by two times without increase of material cost, and further application amount of the top improving ring is effectively lowered.
Description
Technical field
The utility model relates to field of semiconductor manufacture, relates in particular to a kind of top and improves ring and etching chamber.
Background technology
Semi-conductive fabrication schedule, its processing step is various, and processing procedure is complicated, needs very accurate equipment and careful operation, just can reach unblemished quality.In a series of fabrication schedules, one of of paramount importance step is exactly etching.General etching can be divided into two kinds of Wet-type etching (WET ETCH) and dry-etchings (DRY ETCH).And so-called dry-etching (being also referred to as dry etching or dry ecthing) then is to utilize the dry ecthing board to produce the film of electricity slurry with institute desire etching, and generated reactive gas is taken away by PUMP and to be reached the purpose that pattern is shown surely.In dry etching technology; General electric paste etching (Plasma Etching) and active-ion-etch (the Reactive Ion Etching of adopting more; RIE), electric paste etching uses higher pressure (greater than 200mT) and less RF power usually, among chip is immersed in the electricity slurry; Expose at the top layer of electricity slurry atom or molecule contacting with active atomic in the electricity slurry and react and form the gaseous state product and leave crystal face and cause etching to the open air, this type of etching promptly is referred to as electric paste etching.So-called electricity slurry is gas molecule and in an electric field, is dissociated into ion (positive and negative electric charge), electronics, reaches neutral radical etc., and in the pure chemistry reaction, the employing neutral radical is an etching factor, when RIE, gets active ion as etching factor.When electric paste etching; Active atomic, active ion (cation) and electronics have been comprised in the electricity slurry; Voltage (RF Power) is enough when high in addition when pressure lower (less than 100mT) and gas two ends institute, and active ion is promptly quickened to rush at the chip on the electrode rapidly, and exposes the top layer in the electricity slurry on the bump crystal face to the open air; The atom on top layer is hit, again with active atomic reaction thereby cause etching.
Many the little functional areas (Die) that distributing uniformly above the wafer, each zone is exactly an independently little chip.So crystal column surface must can be guaranteed the consistency of the function of the Die that each is little, just the yield in the semiconductor (Yield) by evenly equal etching.But because the electricity slurry distribution character in the processing procedure chamber, and wafer itself along the center to the material characteristic at edge different caused in etching process wafer from inside to outside be etched the different of the uniformity.The uniformity (Uniformity) is being evenly distributed of a kind of measured value.Use the numerical value of each measurement point in the expression chip or the variation of its measured value of chip chamber.In the IC processing procedure, commonly used with the expression film thickness, live width is in the full wafer chip or the distribution of chip chamber.The uniformity is littler, and the expression each point changes littler.That is expression chip process quality is preferable, also is the performance better of processing procedure ability.So the live width in etching process/live width uniformity (CD/CDU) also is an important parameters, can directly influence final test effect and yield.In the etched cavity of etching machine, can use top edge ring (Top Edge Ring is also referred to as top and improves ring), enlarge the principle of the virtual area of whole wafer, to improve the etched uniformity.But along with the increase of RF number, Top Edge Ring also can be etched and lose, and can cause the variation of the etching uniformity, even the risk of meeting defectiveness (defect) generation.Therefore Top Edge Ring must regularly replace on the etching machine, and production cost is huge.
Particularly; See also Fig. 1 and Fig. 2; Existing etching chamber; The electrostatic chuck 2 ' that is used to adsorb wafer 1 ', bottom dead ring 3 ' and the top improvement ring 4 ' that comprise cavity and be positioned at cavity, said electrostatic chuck 2 ' has middle part protruding upward, and said middle part protruding upward is arranged in said bottom dead ring 3 ' from the bottom to top successively and improves ring 4 ' with said top.Said top is improved ring 4 ' and is comprised annular body 41 ', and the medial extremity of the upper surface of said annular body 41 ' is provided with annular notch 42 '.The effect that ring 4 ' is improved on top is the principle that similar characteristic is arranged according to similar material, in order to enlarge the physical radius of wafer, with the neighboring area of change wafer and the etching uniformity of central area.See also Fig. 3, the thickness a of the annular body 41 ' of ring 4 ' is improved on existing top
1' normally 15 millimeters, said annular notch 42 ' cup depth a vertically
2' scope is 3.5 millimeters, the cup depth a of said annular notch 42 ' along continuous straight runs
3' be 3 millimeters.
Yet along with the growth of service time, on the one hand, ring 4 ' meeting is improved owing to etch process attenuation and its surperficial roughening in top, so that its effect that originally improved the uniformity can greatly weaken.On the other hand; The place that the annular notch 42 ' of top improvement ring 4 ' locates not covered by wafer 1 ' can be etched and little groove 43 ' (as shown in Figure 4) occur; When little groove 43 ' occurring; Some short grained impurity things that etching produces accumulate in the little groove 43 ' easily, and the impurity particle that is arranged in little groove 43 ' is very easy to because the air-flow of etch chamber descends slowly and lightly to wafer 1 '.So above-mentioned two reasons have determined the service time that ring 4 ' is improved on top, it must be changed after using certain hour, and it is very short that the useful life of ring 4 ' is improved on top, caused a large amount of wastes of material, improved production cost.
Therefore, how to provide a kind of and can prolong that the useful life of ring is improved on top, ring is improved on the top that reduces production costs and etching chamber is the technical problem that those skilled in the art need to be resolved hurrily.
The utility model content
The purpose of the utility model is to provide a kind of top simple in structure, easy to use to improve ring and etching chamber, and it can make top improve the double increase in useful life of ring, effectively reduces production costs.
In order to reach above-mentioned purpose, the utility model adopts following technical scheme:
Ring is improved on a kind of top, comprises annular body, and the upper surface of said annular body and the medial extremity of lower surface are respectively equipped with annular notch.
Preferably, improve in the ring on above-mentioned top, the thickness range of said annular body is the 15-20 millimeter.
Preferably, improve in the ring on above-mentioned top, the thickness of said annular body is 17 millimeters.
Preferably, improve in the ring on above-mentioned top, the cup depth scope vertically of said annular notch is the 3.5-4.5 millimeter.
Preferably, improve in the ring on above-mentioned top, the cup depth of said annular notch along continuous straight runs is the 3.5-4.5 millimeter.
The invention also discloses a kind of etching chamber; The electrostatic chuck that is used to adsorb wafer, bottom dead ring and the top improvement ring that comprise cavity and be positioned at cavity; Said electrostatic chuck has middle part protruding upward; Said middle part protruding upward is arranged in said bottom dead ring from the bottom to top successively and ring is improved on said top, and said top is improved ring and adopted as above any described top to improve ring.
Ring and etching chamber are improved in the top that the utility model provides, and are respectively equipped with annular notch through the medial extremity that improves the upper and lower surface of the annular body of encircling on top, when the upper surface or lower surface the influencing attenuation or its surperficial roughening or little groove occurring owing to etch process of annular body; Cause in the time of continuing to use; The ring upper-lower position is improved on this top be inverted, just can continue to use this top to improve ring, thereby; Improve under the situation of ring function not influencing top; Increase double but can not increase material cost the useful life that makes top improve ring, thereby effectively reduce the use amount that ring is improved on top, reduced production cost.
Description of drawings
Ring is improved on the top of the utility model and etching chamber is provided by following embodiment and accompanying drawing.
Fig. 1 is the structural representation of existing etching chamber.
Fig. 2 is the structural representation that ring is improved on existing top.
Fig. 3 is the size sketch map that ring is improved on existing top.
Fig. 4 is that the structural representation that little groove situation appears in ring is improved on existing top.
Fig. 5 is the structural representation of the etching chamber of the utility model one embodiment.
Fig. 6 is the structural representation that ring is improved on the top of the utility model one embodiment.
Fig. 7 is the size sketch map that the portion of the utility model one embodiment improves ring.
Among the figure, 1,1 '-wafer, 2,2 '--electrostatic chuck, 3,3 '--the bottom dead ring, 4,4 '--ring is improved on top, and 41,41 '--annular body, 42,42 '--annular notch, the little groove of 43-.
Embodiment
Below will do further to describe in detail to the etching chamber of the utility model.
Below with reference to accompanying drawings the utility model is described in more detail, has wherein represented the preferred embodiment of the utility model, should be appreciated that those skilled in the art can revise the utility model described here and still realize the advantageous effects of the utility model.Therefore, following description is appreciated that extensively knowing to those skilled in the art, and not as the restriction to the utility model.
For clear, whole characteristics of practical embodiments are not described.In following description, be not described in detail known function and structure, because they can make the utility model because unnecessary details and confusion.Will be understood that in the exploitation of any practical embodiments, must make a large amount of implementation details, for example, change into another embodiment by an embodiment according to relevant system or relevant commercial restriction to realize developer's specific objective.In addition, will be understood that this development possibly be complicated and time-consuming, but only be routine work to those skilled in the art.
For the purpose, the characteristic that make the utility model is more obviously understandable, be further described below in conjunction with the embodiment of accompanying drawing to the utility model.What need explanation is, accompanying drawing all adopts the form of simplifying very much and all uses non-ratio accurately, only in order to convenient, the purpose of aid illustration the utility model embodiment lucidly.
See also Fig. 5, shown in Figure 5 is the structural representation of the etching chamber of the utility model one embodiment.Present embodiment provides a kind of etching chamber; The electrostatic chuck 2 that is used to adsorb wafer 1, bottom dead ring 3 and the top improvement ring 4 that comprise cavity (not shown) and be positioned at cavity; Said electrostatic chuck 2 has middle part protruding upward, and said middle part protruding upward is arranged in said bottom dead ring 3 from the bottom to top successively and improves ring 4 with said top.
See also Fig. 6, and please combine Fig. 5, wherein, shown in Figure 6 is the structural representation of the top improvement ring of the utility model one embodiment.Ring 4 is improved on said top, comprises annular body 41, and the medial extremity on the upper and lower surface of said annular body 41 is respectively equipped with annular notch 42.
See also Fig. 7, and please combine Fig. 5 and Fig. 6, improve in the ring 4 the thickness a of said annular body 41 on above-mentioned top
1Scope is the 15-20 millimeter.Show through repeatedly testing, as the thickness a of annular body 41
1During less than 15 millimeters,, top can cause and to play even wafer 1 each regional effect because of the etch process attenuation because improving ring 41; Thickness a when annular body 41
1During greater than 20 millimeters, can cause certain waste to the material of annular body 41; In a word, thickness range is that the annular body 41 of 15-20 millimeter is more suitable.Compare existing annular body, in the present embodiment, the thickness of said annular body 41 is suitably increased, considering that top improves that ring 41 receives etch process under the situation that influences of attenuation, waste material not.Preferable, improving in the ring 4 on above-mentioned top, the thickness of said annular body 41 is 17 millimeters.
Preferable; Improve in the ring 4 on this top; The cup depth a2 scope of vertically thickness direction of annular body 41 (promptly along) of said annular notch 42 is 3.5-4.5 millimeters, the cup depth a of the said annular notch 42 along continuous straight runs Width of annular body 41 (promptly along)
3It is the 3.5-4.5 millimeter.Concrete, in the present embodiment, the cup depth a vertically of said annular notch 42
2Be 4 millimeters, the cup depth a of said annular notch 42 along continuous straight runs
3It is 4 millimeters.Because the thickness a of annular body 41
1Thickness a than original annular body
1' increase to some extent, therefore, satisfying under the prerequisite of its intensity, can suitably increase annular notch 42 cup depth a vertically
2Cup depth a with along continuous straight runs
3, so, can further improve the single face useful life that ring 4 is improved on top, finally prolong the terminal life that ring 4 is improved on top, practiced thrift material cost.
In sum, ring and etching chamber are improved in the top that the utility model provides, and are respectively equipped with annular notch through the medial extremity that improves the upper and lower surface of the annular body of encircling on top; When the upper surface of annular body or lower surface because influencing attenuation or its surperficial roughening or little groove occurring of etch process causes and can't continue to use, ring upper-lower position is improved on this top is inverted; Just can continue to use this top to improve ring; Thereby, to improve under the situation of ring function not influencing top, increase double but can not increase material cost the useful life that makes top improve ring; Effectively reduce top and improve the use amount of ring, reduced production cost.
Obviously, those skilled in the art can carry out various changes and modification to the utility model and not break away from the spirit and the scope of the utility model.Like this, belong within the scope of the utility model claim and equivalent technologies thereof if these of the utility model are revised with modification, then the utility model also is intended to comprise these changes and modification interior.
Claims (6)
1. ring is improved on a top, comprises annular body, it is characterized in that the upper surface of said annular body and the medial extremity of lower surface are respectively equipped with annular notch.
2. ring is improved on top according to claim 1, it is characterized in that the thickness range of said annular body is the 15-20 millimeter.
3. ring is improved on top according to claim 2, it is characterized in that the thickness of said annular body is 17 millimeters.
4. ring is improved on top according to claim 1, it is characterized in that said annular notch cup depth scope vertically is the 3.5-4.5 millimeter.
5. ring is improved on top according to claim 4, it is characterized in that the cup depth of said annular notch along continuous straight runs is the 3.5-4.5 millimeter.
6. etching chamber; The electrostatic chuck that is used to adsorb wafer, bottom dead ring and the top improvement ring that comprise cavity and be positioned at said cavity; Said electrostatic chuck has middle part protruding upward; Said middle part protruding upward is arranged in said bottom dead ring from the bottom to top successively and ring is improved on said top, it is characterized in that, said top is improved the ring employing and improved ring like any described top in the claim 1 ~ 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220293484 CN202633250U (en) | 2012-06-20 | 2012-06-20 | Top improving ring and etching cavity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220293484 CN202633250U (en) | 2012-06-20 | 2012-06-20 | Top improving ring and etching cavity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202633250U true CN202633250U (en) | 2012-12-26 |
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ID=47386408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220293484 Expired - Fee Related CN202633250U (en) | 2012-06-20 | 2012-06-20 | Top improving ring and etching cavity |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202633250U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105990084A (en) * | 2015-03-02 | 2016-10-05 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Focusing ring, lower electrode mechanism and semiconductor processing equipment |
-
2012
- 2012-06-20 CN CN 201220293484 patent/CN202633250U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105990084A (en) * | 2015-03-02 | 2016-10-05 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Focusing ring, lower electrode mechanism and semiconductor processing equipment |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Free format text: FORMER OWNER: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION Effective date: 20130506 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201203 PUDONG NEW AREA, SHANGHAI TO: 100176 DAXING, BEIJING |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20130506 Address after: 100176 No. 18, Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121226 Termination date: 20180620 |